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ASAHI ShigeoGraduate School of Engineering / Department of Electrical and Electronic EngineeringAssociate Professor
Researcher basic information
■ Research news■ Research Keyword
■ Research Areas
- Nanotechnology/Materials / Crystal engineering
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering
- Apr. 2024 - Nov. 2024, 第37回マイクロプロセス・ナノテクノロジー国際会議(MNC2024), 論文委員セクションヘッド
- Mar. 2022 - Feb. 2024, 電子材料シンポジウム(EMS), 実行委員会 企画展示委員
- Apr. 2023 - Nov. 2023, 36th International Microprocesses and Nanotechnology Conference (MNC2023), Program committee
- Apr. 2022 - Nov. 2022, 第35回マイクロプロセス・ナノテクノロジー国際会議(MNC2022), 論文委員
- Apr. 2021 - Nov. 2022, International Photovoltaic Science and Engineering Conference, Program committee
- Apr. 2020 - Feb. 2022, 電子材料シンポジウム(EMS), 実行委員(会場委員)
- Apr. 2021 - Nov. 2021, 34th International Microprocesses and Nanotechnology Conference (MNC2021), Program Committee
- Apr. 2020 - Nov. 2020, 33rd International Microprocesses and Nanotechnology Conference (MNC 2020), Program Committee
- Apr. 2019 - Nov. 2019, 32nd International Microprocesses and Nanotechnology Conference (MNC2019), Program Committee
- Apr. 2017 - Sep. 2019, 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019), Steering Committee
Research activity information
■ Award- Sep. 2022 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-XI), Young Researcher Award, Photoluminescence Characteristics of InAs Quantum Dots in the Doubled-heterointerface of AlGaAs/GaAs-based Two-step Photon Up-conversion Solar Cells
- Jun. 2020 47th IEEE Photovoltaic Specialists Conference (PVSC47), PVSC 47 Best Student Paper Award, Up-converted photocurrent enhancement in modulation-doped two-step photon up-conversion
- Dec. 2015 第26回光物性研究会, 奨励賞
- Aug. 2014 日本材料学会半導体エレクトロニクス部門委員会, 平成26年度第1回研究会学生優秀講演賞
- Abstract While a significant part of the solar energy lies in the infrared range, common semiconductors cannot absorb this part of the solar irradiance by direct band-to-band transitions, because the corresponding photon energies are below the bandgap energy. Two-step photon up-conversion (TPU) is one of the processes that allows us to harvest energy in the region below the bandgap, and one possible approach to realize a TPU-based solar cell is to use an AlGaAs/GaAs heterointerface with quantum dots in order to induce additional intraband transitions. On the other hand, here we report on the TPU phenomenon at a methylammonium lead bromide/gallium arsenide (MAPbBr3/GaAs) heterointerface without quantum dots. For this heterojunction, we observed high-energy photoemission by low-energy photoinjection, demonstrating the TPU. By using photoluminescence (PL) and time-resolved PL measurement techniques, we elucidate the mechanism of the PL emission from MAPbBr3 observed from MAPbBr3/GaAs samples. Through the comparisons of the experimental PL and TRPL results between the MAPbBr3/GaAs and MAPbBr3/Glass-substrate samples, we successfully distinguish the TPU phenomenon from the ordinal two-photon absorption of MAPbBr3. Our findings in the TPU at the MAPbBr3/GaAs heterointerface may help to realize quantum-dot-free photon up-conversion solar cells.Springer Science and Business Media LLC, Jan. 2025, Journal of Optics[Refereed]Scientific journal
- Abstract We studied the photovoltaic properties of a conventional silicon photodiode under monochromatic illumination conditions to clarify the loss mechanisms that are important for application as a laser power converter. While the short-circuit current increases linearly with the excitation power, the power dependence of the open-circuit voltage consists of two regions with different slopes as a result of the Joule heating. At higher excitation power densities, thermal effects play a key role in the current–voltage characteristics, and therefore the maximum conversion efficiency is achieved at a certain excitation-power density. Furthermore, the optimum excitation wavelength shifts towards longer wavelengths as the excitation power density increases, because the optimum value is determined by a trade-off between the optical absorption strength and the excitation power density.IOP Publishing, Jan. 2025, Japanese Journal of Applied Physics, 64(1) (1), 014001 - 014001[Refereed]Scientific journal
- American Chemical Society (ACS), Dec. 2024, ACS Photonics, 12(1) (1), 447 - 456[Refereed]Scientific journal
- Abstract Two-step photon upconversion solar cells (TPU-SCs) based on III–V semiconductors can achieve enhanced sub-bandgap photon absorption because of intraband transitions at the heterointerface. From a technological aspect, the question arose whether similar intraband transitions can be realized by using perovskite/III–V semiconductor heterointerfaces. In this article, we demonstrate a TPU-SC based on a CsPbBr3/GaAs heterointerface. Such a solar cell can ideally achieve an energy conversion efficiency of 48.5% under 1-sun illumination. This is 2.1% higher than the theoretical efficiency of an Al0.3Ga0.7As/GaAs-based TPU-SC. Experimental results of the CsPbBr3/GaAs-based TPU-SC show that both the short-circuit current JSC and the open-circuit voltage VOC increase with additional illumination of sub-bandgap photons. We analyze the excitation power dependence of JSC for different excitation conditions to discuss the mechanisms behind the enhancement. In addition, the observed voltage-boost clarifies that the JSC enhancement is caused by an adiabatic optical process at the CsPbBr3/GaAs heterointerface, where sub-bandgap photons efficiently pump the electrons accumulated at the heterointerface to the conduction band of CsPbBr3. Besides the exceptional optoelectronic properties of CsPbBr3 and GaAs, the availability of a CsPbBr3/GaAs heterointerface for two-step photon upconversion paves the way for the development of high-efficiency perovskite/III–V semiconductor-based single-junction solar cells.Springer Science and Business Media LLC, Nov. 2024, Scientific Reports, 14(1) (1)[Refereed]Scientific journal
- Society of Materials Science, Japan, Feb. 2024, Journal of the Society of Materials Science, Japan, 73(2) (2), 178 - 182Scientific journal
- Lead, 公益社団法人応用物理学会, Sep. 2023, 応用物理, 92(9) (9), 550 - 554, Japanese[Refereed]
- Photon upconversion (PU) is a process where an electron is excited from the valence band to the conduction band of a wide-gap semiconductor by the sequential absorption of two or more photons via real states. For example, two-step PU can generate additional photocurrent in the so-called intermediate-band solar cells. In this work, we consider two- and three-step processes; we study multi-step PU in a quantum dot (QD)-based single-junction solar cell with a double-heterointerface structure. The solar cell consists of three different absorber layers: Al0.7Ga0.3As, Al0.3Ga0.7As, and GaAs, which form two heterointerfaces. Just beneath each heterointerface, an InAs/GaAs QD layer was inserted. After band-to-band excitation, electrons accumulate at each heterointerface, and then, below-bandgap photons excite a certain fraction of these electrons above the barrier energy. The photoluminescence spectra of the InAs QDs reveal slightly different QD size distributions at the two heterointerfaces. We show that the external quantum efficiency is improved by additional irradiation with below-bandgap infrared photons, which suggests a multi-step PU process that involves the two heterointerfaces. The dependence of the photocurrent on the infrared excitation power density only shows a superlinear behavior when the GaAs layer is excited but the Al0.3Ga0.7As layer is not. These data demonstrate a multi-step PU process that consists of one intraband transition at each of the two heterointerfaces and one interband transition in GaAs.AIP Publishing, Mar. 2023, Journal of Applied Physics, 133(12) (12), 124503 - 124503[Refereed]Scientific journal
- Abstract We elucidate a photocarrier collection mechanism in intermediate band solar cells (IBSCs) with InAs-quantum dots (QDs)-in-an-Al0.3Ga0.7As/GaAs-quantum well structures. When the Al0.3Ga0.7As barrier is excited, the device electrical output can be varied by additional infrared light for the electron intraband optical transition in QDs. The photocurrent in IBSC with a single QDs-in-a-well structure shows a monotonic increase with the intraband-excitation density. Conversely, IBSC with a multilayered QDs-in-a-well structure exhibits a photocurrent reduction when electrons in QDs are optically pumped out. The simultaneously measured photoluminescence spectra proved that the polarity of QD states changes depending on the intraband-excitation density. We discuss the drift and diffusion current components and point out that the hole diffusion current is significantly influenced by carriers inside the confinement structure. Under strong intraband excitations, we consider an increased hole diffusion current occurs by blocking hole-capture in the quantum structures. This causes unexpected photocurrent reduction in the multilayered device.IOP Publishing, Jul. 2022, Japanese Journal of Applied Physics, 61(7) (7), 074002 - 074002, English[Refereed]Scientific journal
- American Institute of Physics Inc., Nov. 2021, Journal of Applied Physics, 130(17) (17), EnglishScientific journal
- AIP Publishing, Sep. 2021, Journal of Applied Physics, 130(12) (12), 124505 - 124505, English[Refereed]Scientific journal
- Corresponding, AIP Publishing, Aug. 2021, Journal of Applied Physics, 130(8) (8), 085701 - 085701, English[Refereed]Scientific journal
- Institute of Electrical and Electronics Engineers Inc., Jun. 2021, Conference Record of the IEEE Photovoltaic Specialists Conference, 1786 - 1788, EnglishInternational conference proceedings
- AIP Publishing, Feb. 2021, Journal of Applied Physics, 129(7) (7), 074503 - 074503, English[Refereed]Scientific journal
- Springer Science and Business Media LLC, Dec. 2020, Scientific Reports, 10(1) (1)[Refereed]Scientific journal
- Corresponding, American Physical Society (APS), Jul. 2020, Physical Review Applied, 14(1) (1), English[Refereed]Scientific journal
- Institute of Electrical and Electronics Engineers Inc., Jun. 2020, Conference Record of the IEEE Photovoltaic Specialists Conference, 2020-, 0146 - 0148, EnglishInternational conference proceedings
- Institute of Electrical and Electronics Engineers Inc., Jun. 2020, Conference Record of the IEEE Photovoltaic Specialists Conference, 2020-, 0902 - 0904, EnglishInternational conference proceedings
- IOP Publishing, Dec. 2019, Applied Physics Express, 12(12) (12), 125008 - 125008[Refereed]Scientific journal
- IOP Publishing, Sep. 2019, Semiconductor Science and Technology, 34(9) (9), 094003 - 094003Scientific journal
- Institute of Electrical and Electronics Engineers Inc., Jun. 2019, Conference Record of the IEEE Photovoltaic Specialists Conference, 2623 - 2626, EnglishInternational conference proceedings
- Institute of Electrical and Electronics Engineers Inc., Jun. 2019, Conference Record of the IEEE Photovoltaic Specialists Conference, 2597 - 2599, EnglishInternational conference proceedings
- Institute of Electrical and Electronics Engineers Inc., Jun. 2019, Conference Record of the IEEE Photovoltaic Specialists Conference, 3004 - 3006, EnglishInternational conference proceedings
- We studied the dynamics of electrons generated by two-step photoexcitation in an intermediate-band solar cell (IBSC) comprising InAs/GaAs/Al0.3Ga0.7As dot-in-well (DWELL) structure using time-resolved photocurrent (TRPC) measurement. The examined IBSC exhibited considerably slower photocurrent decay than a conventional InAs/GaAs quantum dot IBSC, which is due to the extraordinaLead, Nature Publishing Group, May 2019, Scientific Reports, 9, 7859 - 1-8, English[Refereed]Scientific journal
- Mar. 2019, Physica E: Low-dimensional Systems and Nanostructures, English[Refereed]Scientific journal
- Nature Publishing Group, Feb. 2019, Nature Communications, 10, 956 - 1-3, English[Refereed]Scientific journal
- Springer Verlag, 2019, Green Energy and Technology, 55 - 79, EnglishIn book
- Springer Verlag, 2019, Green Energy and Technology, 81 - 137, EnglishIn book
- Springer Verlag, 2019, Green Energy and Technology, 15 - 24, EnglishIn book
- Springer Verlag, 2019, Green Energy and Technology, 157 - 202, EnglishIn book
- Springer Verlag, 2019, Green Energy and Technology, 139 - 156, EnglishIn book
- Springer Verlag, 2019, Green Energy and Technology, 25 - 42, EnglishIn book
- Springer Verlag, 2019, Green Energy and Technology, 43 - 54, EnglishIn book
- Springer Verlag, 2019, Green Energy and Technology, 1 - 13, EnglishIn book
- Springer Singapore, 2019, Green Energy and Technology[Refereed]
- Lead, Nature Publishing Group, Dec. 2018, Scientific Reports, 8(1) (1), pp. 872 - 1-8, English[Refereed]Scientific journal
- Institute of Electrical and Electronics Engineers Inc., Nov. 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, 3447 - 3450, EnglishInternational conference proceedings
- Nov. 2018, Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition, 126 - 128, EnglishInternational conference proceedings
- Jul. 2018, Applied Physics Express, Vol. 11(No. 1) (No. 1), pp.082303 - 1-4, EnglishHot-Carrier Generation in a Solar Cell Containing InAs/GaAs Quantum-Dot Superlattices as a Light Absorber[Refereed]Scientific journal
- SPIE, 2018, Proceedings of SPIE - The International Society for Optical Engineering, 10527, English[Invited]International conference proceedings
- Jan. 2018, APPLIED PHYSICS EXPRESS, 11(1) (1), pp. 012301 - 1-4, English[Refereed]Scientific journal
- Jul. 2017, SCIENTIFIC REPORTS, 7, pp. 5865 - 1-10, English[Refereed]Scientific journal
- Corresponding, May 2017, APPLIED PHYSICS LETTERS, 110(19) (19), pp. 193104 - 1-5, English[Refereed]Scientific journal
- Apr. 2017, NATURE COMMUNICATIONS, 8, pp. 14962 - 1-9, English[Refereed]Scientific journal
- Mar. 2017, 材料 別冊, 66(3) (3), pp. 244~249, Japanese半導体材料・デバイスの最新の進展 3. 太陽電池の変換効率限界を引き上げる半導体材料設計[Refereed][Invited]Scientific journal
- Nov. 2016, PHYSICAL REVIEW B, 94(19) (19), pp. 195313 - 1 -9, English[Refereed]Scientific journal
- Society of Materials Science Japan, Sep. 2016, Zairyo/Journal of the Society of Materials Science, Japan, 65(9) (9), 647 - 651, Japanese[Refereed]Scientific journal
- 日本材料学会, Sep. 2016, 日本材料学会会誌「材料」, 65(9) (9), pp. 647 - 651, Japanese量子ドット超格子太陽電池における2段階光励起電流生成ダイナミクスの電界依存特性[Refereed]Scientific journal
- Mar. 2016, IEEE JOURNAL OF PHOTOVOLTAICS, 6(2) (2), 465 - 472, English[Refereed]Scientific journal
- Institute of Electrical and Electronics Engineers ({IEEE}), Nov. 2015, IEEE Journal of Photovoltaics, 5(6) (6), 1613 - 1620, English[Refereed]Scientific journal
- Society of Materials Science Japan, Sep. 2015, Zairyo/Journal of the Society of Materials Science, Japan, 64(9) (9), 690 - 695, Japanese[Refereed]Scientific journal
- In this study, we propose a carrier time-of-flight technique to evaluate the carrier transport time across a quantum structure in an active region of solar cells. By observing the time-resolved photoluminescence signal with a quantum-well probe inserted under the quantum structure at forward bias, the carrier transport time can be efficiently determined at room temperature. The{AIP} Publishing, Jul. 2015, Applied Physics Letters, 107(4) (4), 043901 - 043901, English[Refereed]Scientific journal
- May 2015, PHYSICAL REVIEW B, 91(20) (20), pp. 201303 - 1-6, English[Refereed]Scientific journal
- 2015, 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), EnglishUltrafast Photocarrier Transport Dynamics in InAs/GaAs Quantum Dot Superlattice Solar Cell[Refereed]International conference proceedings
- 2015, 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), EnglishSaturable Two-step Photo current Generation in Intermediate-band Solar Cells Including InAs Quantum Dots Embedded in Al0.3Ga0.7As/GaAs Quantum Wells[Refereed]International conference proceedings
- 2015, 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), EnglishComparison of Electron and Hole Mobilities in Multiple Quantum Well Solar Cells Using a Time-of-Flight Technique[Refereed]International conference proceedings
- 2015, 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), English[Refereed]International conference proceedings
- 2015, PHYSICS SIMULATION AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES IV, 9358, EnglishInternational conference proceedings
- Institute of Electrical and Electronics Engineers ({IEEE}), Nov. 2014, IEEE Journal of Photovoltaics, 4(6) (6), 1518 - 1525, English[Refereed]Scientific journal
- Aug. 2014, JOURNAL OF APPLIED PHYSICS, 116(6) (6), pp. 063510 - 1-5, English[Refereed]Scientific journal
- Society of Materials Science Japan, 01 Mar. 2017, Zairyo/Journal of the Society of Materials Science, Japan, 66(3) (3), 244 - 249, JapaneseBook review
- 01 Sep. 2014, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 75th, ROMBUNNO.17P-A28-1, Japaneseキャリア走行時間測定法による量子構造太陽電池内のダイナミクスの直接観測
- 03 Mar. 2014, 応用物理学会春季学術講演会講演予稿集(CD-ROM), 61st, ROMBUNNO.19P-D7-11, Japaneseプローブ構造を用いた量子構造太陽電池におけるキャリア走行時間の測定
■ Lectures, oral presentations, etc.
- The 72nd Japanese Society of Applied Physics Spring Meeting, Mar. 2025, JapaneseSpectroscopic characterization of silicon laser-power converterOral presentation
- The 72nd Japanese Society of Applied Physics Spring Meeting, Mar. 2025, EnglishAll-inorganic CsPbBr3–xClx Perovskite Nanocrystals, Potential Semiconductors for Bifacial Two-step Photon Upconversion Solar CellsOral presentation
- The 72nd Japanese Society of Applied Physics Spring Meeting, Mar. 2025, JapaneseEfficient intraband transition in up-conversion solar cells using double tunnel-junctionOral presentation
- 第85回応用物理学会秋季学術講演会, Sep. 2024, Japanese2段階フォトンアップコンバージョン太陽電池におけるバンド内赤外光学遷移の量子ドットによる増強特性Oral presentation
- 第85回応用物理学会秋季学術講演会, Sep. 2024, JapaneseMAPbI₃/Siヘテロ構造を利用した二段階フォトンアップコンバージョン太陽電池
- The 85th JSAP Autumn Meeting 2024, Sep. 2024, EnglishIntraband Transitions Induced by Below-Bandgap Photoexcitation at CsPbBr₃/GaAs Heterointerface
- 52nd IEEE Photovoltaic Specialists Conference (PVSC52), Jun. 2024, EnglishVoltage Boost Effects in Solar Cells Utilizing Adiabatic Photon Up-Conversion with a Double Tunnel JunctionPoster presentation
- 52nd IEEE Photovoltaic Specialists Conference (PVSC52), Jun. 2024, EnglishTwo-Step Photon Upconversion Solar Cells Based on CsPbBr3/GaAs HeterointerfacePoster presentation
- 第71回応用物理学会春季学術講演会, Mar. 2024, Japanese極性制御した2段階アップコンバージョン太陽電池におけるアップコンバージョン特性の変化Oral presentation
- 第70回応用物理学会春季学術講演会, Mar. 2023, EnglishOptimization of the Morphological Structure of Spin-Coated MAPbBr₃ on p-GaAs Substrates for Perovskite/GaAs-based Photon Up-conversion Solar CellsOral presentation
- 日本材料学会2022年度半導体エレクトロニクス部門委員会第3回研究会, Jan. 2023, JapaneseドープされたInAs/GaAs量子ドットにおける局在表面プラズモン共鳴による電場増強効果Oral presentation
- 日本材料学会2022年度半導体エレクトロニクス部門委員会第2回研究会, Nov. 2022, Japanese量子ドットを内包する半導体ヘテロナノ構造を利用した量子型赤外光検出素子の暗電流制御Oral presentation
- 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33), EnglishBroadband Enhancement of Intraband Transition in Two-Step Photon Up-Conversion Solar Cells with a Doubled-Heterointerface StrucureOral presentation
- 第41回電子材料シンポジウム(EMS41), Oct. 2022Intraband Transition in Two-Step Photon Up-Conversion Solar Cells
- 第41回電子材料シンポジウム(EMS41), Oct. 2022, JapaneseThermal Activation Process at the Heterointerface in Photon Up-Conversion Solar Cells Using hole Up-ConversionOral presentation
- 8th World Conference on Photovoltaic Energy Conversion (WCPEC-8), EnglishHigh Absorptivity of Intraband Transition Occurring at Heterointerface in Two-Step Photon Up-Conversion Solar CellsPoster presentation
- The 83rd JSAP Autumn Meeting 2022, Sep. 2022, EnglishElectrical Properties of AlGaAs/GaAs-Based Two-Step Photon Up-Conversion Solar Cells with Doubled HeterointerfacesOral presentation
- 9th International Symposium on Control of Semiconductor Interfaces(ISCSI-IX), EnglishPhotoluminescence Characteristics of InAs Quantum Dots in the Doubled-heterointerface of AlGaAs/GaAs-based Two-step Photon Up-conversion Solar CellsOral presentation
- International Conference on the Physics of Semiconductors (ICPS 2022), EnglishIntraband Absorptivity in Two-Step Photon Up-Conversion Solar CellsOral presentation
- 第69回応用物理学会春季学術講演会, Mar. 2022, Japanese2段階フォトンアップコンバージョン太陽電池における ヘテロ界面のバンド内遷移の光吸収率Oral presentation
- 第69回応用物理学会春季学術講演会, Mar. 2022, Japanese正孔フォトンアップコンバージョン太陽電池の赤外光照射による光電流制御Oral presentation
- The 6th International Conference on New Energy Future Energy Systems (NEFES 2021), Nov. 2021, EnglishRoute to High Conversion Efficiency Solar Cell[Invited]Invited oral presentation
- 第40回電子材料シンポジウム, Oct. 2021, Japanese2段階フォトンアップコンバージョン太陽電池における 断熱的バンド内光励起による擬フェルミ準位分裂Poster presentation
- 第82回応用物理学会秋季学術講演会, Sep. 2021, EnglishOn the Simulation of Two-Step Photocurrent Generation in an InAs Quantum Dot -in-Well Intermediate Band Solar CellOral presentation
- 第82回応用物理学会秋季学術講演会, Sep. 2021, Japanese正孔のアップコンバージョンを利用した2段階フォトンアップコンバージョン太陽電池のバンド内遷移過程Oral presentation
- 8th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2021), Sep. 2021, EnglishTwo-step photon up-conversion solar cells: recent progress and future directions[Invited]Invited oral presentation
- 第68回応用物理学会春季学術講演会, Mar. 2021, EnglishEfficiency Compensation from Intraband Transitions of Opposite Carrier in a Quantum Dot-in-Well Intermediate Band Solar CellOral presentation
- 第68回応用物理学会春季学術講演会, Mar. 2021, Japanese変調ドープした二段階フォトンアップコンバージョン太陽電池における電圧上昇効果Oral presentation
- 第4回フロンティア太陽電池セミナー, Nov. 2019, Japanese高効率2段階フォトンアップコンバージョン太陽電池の基礎動作検証[Invited]Invited oral presentation
- 46th IEEE Photovoltaic Specialists Conference, Jul. 2019, English, Chicago, International conferenceStrong Voltage-Boost Effect in Two-Step Photon-Up Conversion Solar CellsOral presentation
- 46th IEEE Photovoltaic Specialists Conference, Jul. 2019, English, Chicago, International conferenceHot-Carrier Extraction in InAs/GaAs Quantum Dot Superlattice Solar CellsOral presentation
- 46th IEEE Photovoltaic Specialists Conference, Jun. 2019, English, Chicago, International conferenceReciprocal Relationship Between Photoluminescence and Photocurrent in Two-Step Photon Up-Conversion Solar CellOral presentation
- Optics&Photonics International Congress 2019, Apr. 2019, English, Yokohama, International conferenceEfficient Hot-Carrier Generation in InAs/GaAs Quantum Dot SuperlatticesOral presentation
- 第66回応用物理学会春季学術講演会, Mar. 2019, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子を用いたホットキャリア型太陽電池における開放電圧の向上Oral presentation
- 第37回電子材料シンポジウム, Oct. 2018, Japanese, Domestic conferenceVoltage boost effect in two-step photon up-conversion solar cell with partial absorptivityPoster presentation
- 35th European PV Solar Energy Conference and Exhibition, Sep. 2018, English, Belgium, International conferenceOptimal Band Gap Energies for Two-Step Photon Up-Conversion Solar Cells with Partial AbsorptivityOral presentation
- 第79回応用物理学会秋季学術講演会, Sep. 2018, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子太陽電池におけるホットキャリア電流取り出し特性Oral presentation
- 第79回応用物理学会秋季学術講演会, Sep. 2018, Japanese, Domestic conference2段階フォトンアップコンバージョン太陽電池における理論変換効率の入射光スペクトル形状依存性Oral presentation
- 2018 年度 応用物理学会中国四国支部・若手半導体研究会, Aug. 2018, Japanese超高効率フォトンアップコンバージョン太陽電池の提案と基礎検証[Invited]Invited oral presentation
- The 7th edition of the World Conference on Photovoltaic Energy Conversion, Jun. 2018, English, Hawaii, International conferenceCarrier Collection Efficiency of Intraband-Excited Carriers in Two-Step Photon Up-Conversion Solar CellsOral presentation
- 応用物理学会関西支部平成30年度第1回講演会, May 2018, Japanese, 神戸大学, Domestic conference入射光スペクトル形状を考慮した2段階フォトンアップコンバージョン太陽電池の理論変換効率Poster presentation
- International Conference on Nanophotonics and Nano-optoelectronics 2018, Apr. 2018, English, Yokohama, International conferencePolarization Dependent Photocurrent in InAs/GaAs Quantum Dot Superlattice Solar CellsOral presentation
- International Conference on Nanophotonics and Nano-optoelectronics 2018, Apr. 2018, English, Yokohama, International conferenceExtraction Efficiency of Up-Converted Electrons in Two-Step Photon Up-Conversion Solar CellsOral presentation
- 第65回応用物理学会春季学術講演会, Mar. 2018, Japanese, Domestic conference吸収率を考慮した2段階フォトンアップコンバージョン太陽電池の理論変換効率Oral presentation
- 第65回応用物理学会春季学術講演会, Mar. 2018, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子を用いたホットキャリア型太陽電池動作実証Oral presentation
- 応用物理学会関西支部平成29年度第3回講演会, Feb. 2018, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子を用いたホットキャリア型太陽電池の動作評価Poster presentation
- SPIE Photonics West, Jan. 2018, English, San Francisco, International conferenceTwo-Step Photon Up-Conversion Solar Cell: Propose and Demonstration[Invited]Invited oral presentation
- MTSA2017-OptoX Nano-TeraNano8, Nov. 2017, English, Okayama, International conferenceTwo-Step Photon Up-Conversion Solar CellOral presentation
- The 27th Photovoltaic Science and Engineering Conference, Nov. 2017, English, Otsu, International conferenceTwo-Step Photo-Excitated Electrons with Extremely-Long Lifetime in Intermedeate-band Solar Cells Using Dot-in Well StrucyureOral presentation
- The 27th Photovoltaic Science and Engineering Conference, Nov. 2017, English, Otsu, International conferenceTwo-Step Photn Up-Conversion Solar Cells Incorporating a Voltage Booster Hetero-InterfaceOral presentation
- The 27th Photovoltaic Science and Engineering Conference, Nov. 2017, English, Otsu, International conferenceInfrared Absorption Characteristics in Two-Step Photon Up-Conversion Solar CellsOral presentation
- The 27th Photovoltaic Science and Engineering Conference, Nov. 2017, English, Otsu, International conferenceEfficient Two-Step Photocurrent in Intermediate Band Solar Cells Using Highly Homogeneous InAs/GaAs Quantum-Dot SuperlatticeOral presentation
- 第78回応用物理学会秋季学術講演会, Sep. 2017, Japanese, Domestic conference低温キャップInAs/GaAs量子ドット超格子中間バンド型太陽電池における熱脱出の抑制Oral presentation
- 日本材料学会半導体エレクトロニクス部門委員会平成29年度第1回研究会, Sep. 2017, Japanese, Domestic conference低温キャップInAs/GaAs量子ドット超格子中間バンド型太陽電池における2段階光吸収の増強Oral presentation
- 33rd European Photovoltaic Solar Energy Conference and Exhibition, Sep. 2017, English, Netherlands, International conferencePhoton Up-Converted Photocurrent in a Single Junction Solar Cell with a Hetero-InterfaceOral presentation
- 33rd European Photovoltaic Solar Energy Conference and Exhibition, Sep. 2017, English, Netherlands, International conferenceIncreasing Photovoltage Boosted by Photon Up-Conversion in a Single-Junction Solar Cell with a Hetero-InterfaceOral presentation
- 第78回応用物理学会秋季学術講演会, Sep. 2017, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子太陽電池におけるバンド内遷移の偏光特性Oral presentation
- 33rd European Photovoltaic Solar Energy Conference and Exhibition, Sep. 2017, English, Netherlands, International conferenceExtended Optical Response of Two-Step Photoexcitation in InAs/GaAs Quantum-Dot Superlattice Intermediate Band Solar CellsOral presentation
- SemiconNano 2017: 6th International Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, Sep. 2017, English, Milano, International conferenceCarrier Dynamics in Photon Up-Conversion Solar CellsOral presentation
- 2017 IEEE Photovoltaic Specialists Conference, Jun. 2017, English, Washington D.C., International conferenceIncreasing Current Generation by Photon Up-Conversion in a Single-Junction Solar Cell with a Hetero-InterfaceOral presentation
- 第77回応用物理学会秋季学術講演会, Sep. 2016, Japanese, Domestic conferenceInAs/GaAs量子ドット中間バンド型太陽電池における電子の熱脱出過程の解明Oral presentation
- 第35回電子材料シンポジウム, Jul. 2016, Japanese, Domestic conferenceThermal carrier-escape process from the intermediate band in InAs/GaAs quantum dot solar cellsPoster presentation
- UK Semiconductors 2016, Jul. 2016, English, Sheffield, International conferencePolarization-Insensitive Intraband Transition in InAs/GaAs Quantum Dot SuperlatticesOral presentation
- 32nd European Photovoltaic Solar Energy Conference and Exhibition, Jun. 2016, English, Munich, International conferenceExtended Electron Lifetime in Intermediate-Band Solar Cells Using Dot-in-Well StructureOral presentation
- 32nd European Photovoltaic Solar Energy Conference and Exhibition, Jun. 2016, English, Munich, International conferenceEnhancement of Two-Step Photon Absorption Due to Miniband Formation in InAs/GaAs Quantum Dot Superlattice Solar CellOral presentation
- IEEE Electron Devices Society MembershipJan. 2018 - Present
- IEEE MembershipJan. 2018 - Present
- 応用物理学会 正会員Jan. 2017 - Present
- 日本学術振興会, 科学研究費助成事業 基盤研究(B), 基盤研究(B), 神戸大学, Apr. 2023 - Mar. 2026ヘテロ界面に挿入した量子ドットによる赤外増感型光電変換の実現
- 日本学術振興会, 科学研究費助成事業 基盤研究(C), 基盤研究(C), 神戸大学, Apr. 2023 - Mar. 2026ダブルトンネル接合を利用したラチェット型アップコンバージョン太陽電池
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A), Grant-in-Aid for Scientific Research (A), Kobe University, 01 Apr. 2019 - 31 Mar. 2023Novel development of infrared sensitized photovoltaics based on control of intraband optical transition dipolep型とn型に挟まれたダイオード構造の真性層に、AlGaAs/GaAsヘテロ界面にInAs量子ドットを挿入した量子ナノ構造を作製し、電子のみを蓄積したヘテロ界面において価電子バンド-伝導バンド間光学遷移とバンド内光学遷移の連続した2段階の遷移による電子のエネルギーをアップコンバージョンによって増強されたバンド内光吸収に基づく赤外波長域に応答する光電変換特性を実現する。本年度は以下のように実施した。 (1)量子ナノ構造の作製と基礎光学特性評価:分子線エピタキシー技術を利用してGaAs(001)基板上にAlGaAs/GaAsヘテロ界面にInAs量子ドットを挿入した量子ナノ構造を内包するダイオード構造を作製し、ヘテロ界面にSi変調ドーピングによって電子密度を制御した量子構造を作製した。変調ドーピングによる界面電界の制御を明らかにして、光電流取り出し特性を詳細に明らかにした。 (2)バンド内光学遷移分極の制御:バンド内光学遷移強度は、光電場で誘起される電子分極の大きさと遷移始状態の電子占有率に比例する。量子ドットのサイズ、密度による光学応答への影響を明らかにするため電子で満たされた量子ドットにおけるプラズモン共鳴特性を明らかにして中赤外領域における光アンテナ効果を理論的に予測した。具体的には、量子ドットの形状・サイズに依存したプラズモン共鳴特性を計算し、8~16マイクロメートルの広範囲にわたる制御性を明らかにするとともに、量子ドット間のプラズモン共鳴状態の結合によるモード分散を明らかにした。 (3)光吸収係数の定量評価とアップコンバージョン光電流の最大化:デバイスを試作して光近赤外から中赤外に広がる広い波長範囲で光応答特性を明らかにし、ヘテロ界面電子濃度に依存すると予想されるバンド内光学遷移を確認した。
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Early-Career Scientists, Grant-in-Aid for Early-Career Scientists, Kobe University, Apr. 2020 - Mar. 2023Realization of high-efficiency energy conversion in solar cells using photon up-conversion現在の太陽電池の主流である単接合型太陽電池の変換効率は理論的に約30%に制限される。その理論変換効率を超える太陽電池のアイデアがいくつか提案されているが、我々は2個の低エネルギー光子から1個の高エネルギー電子を生成する2段階アップコンバージョン(TPU)現象を利用した、2段階フォトンアップコンバージョン太陽電池(TPU-SC)を提案した。本研究では、アップコンバージョンによる電流上昇効率を現状からさらに10倍向上し、変換効率向上に寄与することを目的とする。 1年目は変調ドーピングによるアップコンバージョン効率の向上を実証することを行った。その結果、約3倍のアップコンバージョン効率の向上に成功した。また、アップコンバージョンによるヘテロ界面での擬フェルミ準位分裂の実験観測に成功した。これは、ヘテロ界面における赤外線吸収により、低エネルギーフォトンの光エネルギー変換が可能であることを示している。2年目は、ヘテロ界面に挿入した量子ドットの位置によるアップコンバージョンへの変化を調べた。その結果、量子ドットの位置を最適化することでアップコンバージョン効率がさらに3倍以上向上することを見出した。これにより、当初の目標であったアップコンバージョン効率の10倍向上が見えてきた。一方、ナローギャップ半導体に正孔のバリア層を設けることで、電子と正孔の分離を促し、ヘテロ界面に蓄積する電子密度の向上を図ったが、このバリアによりヘテロ界面での電子密度が減少することが分かり、この構造は適切ではないことが分かった。 一方、ホールのアップコンバージョンを利用したアップコンバージョン太陽電池の電流減少メカニズムも継続して取り組んでいる。アップコンバージョン遷移後の状態で、実効的なエネルギーバリアにより、正孔の取り出しが阻害される可能性を見出した。来年度も引き続き解明に取り組む。
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Research (Exploratory), Grant-in-Aid for Challenging Research (Exploratory), Kobe University, Jul. 2020 - Mar. 2022Control of intraband optical transition sensitized in infrared wavelength region and application for ultra-high sensitive infrared sensorWe have developed an infrared sensing device with a quantum nano-structure of a heterointerface containing quantum dots. This device exhibits effective intraband photo-absorption at the hertointerface which is enhanced by quantum dots. The central part of our device is an Al0.3Ga0.7As/GaAs heterostructure containing InAs/GaAs quantum dots. In this device, the electrons that have been accumulated at the heterointerface are transferred to the conduction band of the Al0.3Ga0.7As barrier by absorbing infrared photons and the following drift due to the electric field at the interface. These intraband transitions at the heterointerface are sensitized by the quantum dots. According to theoretical calculations, strong localized plasmon modes enhances the electro-magnetic wave of the infrared signal light.
- 学術研究助成基金助成金/国際共同研究加速基金(国際共同研究強化(B)), Oct. 2018 - Mar. 2021Competitive research funding
- 公益財団法人ひょうご科学技術協会, 学術研究助成, Apr. 2019 - Mar. 2020, Principal investigatorフォトンアップコンバージョン太陽電池における高効率エネルギー変換の実現
- 科学研究費補助金/研究活動スタート支援, Aug. 2018 - Mar. 2020, Principal investigatorCompetitive research funding
- 公益財団法人 小笠原科学技術振興財団, 国際研究集会出張助成, Nov. 2017 - Nov. 2017半導体ヘテロ接合を有する単接合型太陽電池における光アップコンバージョンによる光起電力の増強
- 公益財団法人 関西エネルギー・リサイクル科学技術振興財団, 国際交流活動助成(渡航), Jun. 2017 - Jun. 2017ヘテロ接合を有する単接合型太陽電池の光アップコンバージョンによる電流生成の増大
- 公益財団法人 村田学術振興財団, 海外派遣援助, Apr. 2016 - Apr. 2016ドットインウェル構造を用いた中間バンド型太陽電池における、電子寿命の伸長
- 公益財団法人 関西エネルギー・リサイクル科学技術振興財団, 国際交流活動助成(海外渡航), Al0.3Ga0.7As/GaAs量子井戸に埋め込まれたInAs量子ドットを使用した中間バンド型太陽電池の2段階光キャリア生成の飽和, Jun. 2015 - Jun. 2015, Principal investigator