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KITAMURA MasatoshiGraduate School of Engineering / Department of Electrical and Electronic EngineeringProfessor
Researcher basic information
■ Research Keyword■ Research Areas
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment
- 2014 - Present, 薄膜材料デバイス研究会, 組織委員
- 2013 - Present, 公益社団法人応用物理学会, APEX/JJAP編集委員
- Aug. 2012 - Present, International Workshop on Active-Matrix Flatpanel Displays and Devices, Program Committee Vice Chair (25th, 26th), Program Committee Member (21st-24th)
- 2007 - Present, 電子材料シンポジウム, 論文委員
- 2018 - 2024, 日本学術振興会アモルファス・ナノ材料と応用第147委員会, 運営委員 半導体材料 副担当
- 2021 - 2021, The 11th International Conference on Flexible and Printed Electronics, Publication Chair, Program Committee
- Feb. 2016 - Jan. 2021, 公益社団法人応用物理学会, 代議員
- Apr. 2017 - Mar. 2019, 応用物理学会関西支部, 諮問委員
- 2019, 46th International Symposium on Compound Semiconductors, Program Subcommittees Chair
- Apr. 2015 - Mar. 2017, 応用物理学会関西支部, 幹事
- 2016 - 2016, International Conference on Flexible and Printed Electronics, Technical Program Committee
- 2016 - 2016, 43th International Symposium on Compound Semiconductors, Program Committee, Local Arrangement Committee
- 2013 - 2015, International Conference on Solid State Devices and Materials, Program Committee
- 2014 - 2014, 8th International Conference on Molecular Electronics and Bioelectronics, Organizing Committee
- 2011 - 2014, 公益社団法人応用物理学会, 学術講演会プログラム編集委員
- 2012 - 2012, 7th International Conference on Molecular Electronics and Bioelectronics, Executive Member
- 2012 - 2012, 40th International Symposium on Compound Semiconductors, Program Committee, Local Arrangement Committee
- 2011 - 2012, 公益社団法人応用物理学会, 有機分子・バイオエレクトロニクス分科会・編集・企画幹事
- 2011 - 2011, Workshop on Innovation and Pioneering Technology, Executive Member
- 2009 - 2009, International Symposium on Quantum Nanophotonics and Nanoelectronics, Local Steering Committee
- 2008 - 2009, 電子材料シンポジウム, 総務委員
- 2007 - 2008, 公益社団法人応用物理学会, 有機分子・バイオエレクトロニクス分科会・幹事
Research activity information
■ Award■ Paper
- Abstract Optical microscopy with white light illumination has been employed when obtaining exfoliated monolayer hexagonal boron nitride (1L hBN) films from a large number of randomly placed films on a substrate. However, real-time observation of 1L hBN using a color camera under white light illumination remains challenging since hBN is transparent in the visible wavelength range. The poor optical constant of 1L hBN films in microphotographs is significantly improved using a Si substrate coated with a SiNx thin-film (SiNx/Si). When observing hBN thin films on SiNx/Si using a color digital camera in an optical microscope under white light illumination, the clarity of the captured images depends on the thickness of the SiNx film (d). For direct real-time observation, the d was optimized based on quantitative chromatic studies tailored to Bayer filters of a color image sensor. Through image simulation, it was determined that the color difference between 1L hBN and the bare substrate is maximized at d = 59 or 70 nm, which was experimentally verified. The SiNx/Si with optimized d values visualized 1L hBN films without requiring significant contrast enhancement via image processing under white light illumination in real-time. Furthermore, the captured color photographs facilitate the reliable determination of the number of layers in few-layer hBN films using the contrast of the green channel of the images.Last, IOP Publishing, Jun. 2024, Nanotechnology, English[Refereed]Scientific journal
- Abstract The surface properties of an InGaZnO4 (IGZO) layer with a monolayer formed on the surface using octadecyl phosphonic acid (ODPA) or (1H, 1H, 2H, 2H-heptadecafluorodecyl) phosphonic acid (FDPA) were investigated. Surface roughness, wettability, and work function were investigated using atomic force microscopy, water contact angle measurement, and photoelectron yield spectroscopy, respectively. The reaction time of monolayer formation on an IGZO layer was discussed based on the measured contact angle. An ODPA-monolayer formed at a slightly higher rate than an FDPA-monolayer. The work function measurement provided an estimate of the density of the molecule in the monolayer. Furthermore, the measured contact angle was used to evaluate the thermal stability of a monolayer. The evaluation suggested that annealing above 500 K causes monolayer desorption for both ODPA- and FDPA-monolayers.IOP Publishing, Dec. 2023, Japanese Journal of Applied Physics, 63(1) (1), 01SP32 - 01SP32, English[Refereed]Scientific journal
- Last, American Chemical Society (ACS), Oct. 2023, ACS Applied Nano Materials, English[Refereed]Scientific journal
- Abstract Exfoliated flakes of layered materials, such as hexagonal boron nitride (hBN) and graphite with a thickness of several tens of nanometers, are used to construct van der Waals heterostructures. A flake with a desirable thickness, size, and shape is often selected from many exfoliated flakes placed randomly on a substrate using an optical microscope. This study examined the visualization of thick hBN and graphite flakes on SiO2/Si substrates through calculations and experiments. In particular, the study analyzed areas with different atomic layer thicknesses in a flake. For visualization, the SiO2 thickness was optimized based on the calculation. As an experimental result, the area with different thicknesses in a hBN flake showed different brightness in the image obtained using an optical microscope with a narrow band-pass filter. The maximum contrast was 12% with respect to the difference of monolayer thickness. In addition, hBN and graphite flakes were observed by differential interference contrast (DIC) microscopy. In the observation, the area with different thicknesses exhibited different brightnesses and colors. Adjusting the DIC bias had a similar effect to selecting a wavelength using a narrow band-pass filter.Last, IOP Publishing, May 2023, Nanotechnology, 34(29) (29), 295701 - 295701, English[Refereed]Scientific journal
- Thiophene–thiophene block copolymer composed of hydrophilic and hydrophobic side chain functionalities was designed and synthesized. Deprotonative metalation nickel-catalyzed polymerization protocol successfully afforded the block copolymer, which side chains are derived...Royal Society of Chemistry (RSC), Jan. 2023, Journal of Materials Chemistry C, 11(7) (7), 2484 - 2493, English[Refereed]Scientific journal
- Last, Elsevier BV, Jan. 2023, Thin Solid Films, 764, 139631 - 139631, English[Refereed]Scientific journal
- Abstract We propose a visualization technique for identifying an exfoliated monolayer hexagonal boron nitride (hBN) flake placed on a SiNx/Si substrate. The use of a Si substrate with a 63 nm thick SiNx film enhanced the contrast of monolayer hBN at wavelengths of 480 and 530 nm by up to 12% and −12%, respectively. The maximum contrast for the Si substrate with SiNx is more than four times as large as that for a Si substrate with a ∼90 or ∼300 nm SiO2 film. Based on the results of the reflectance spectrum measurement and numerical calculations, the enhancement is discussed.Last, IOP Publishing, Aug. 2022, Applied Physics Express, 15(8) (8), 086502 - 086502, English[Refereed]Scientific journal
- A trimethylsilyl-monolayer modified by vacuum ultraviolet (VUV) light has been investigated for use in solution-processed organic thin-film transistors (OTFTs). The VUV irradiation changed a hydrophobic trimethylsilyl-monolayer formed from hexamethyldisilazane vapor into a hydrophilic surface suitable for solution processing. The treated surface was examined via water contact angle measurement and X-ray photoelectron spectroscopy. An appropriate irradiation of VUV light enabled the formation of a dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) film on a modified monolayer by spin-coating. Consequently, the C8-BTBT-based OTFT with a monolayer modified for an optimal VUV irradiation time exhibited a field-effect mobility up to 4.76 cm2 V−1 s−1. The partial monolayer modification with VUV can be adapted to a variety of solution-processes and organic semiconductors for prospective printed electronics.Corresponding, IOP Publishing, Jun. 2022, Japanese Journal of Applied Physics, 61(SE) (SE), SE1012 - SE1012, English[Refereed]Scientific journal
- Last, IOP Publishing, Feb. 2022, Nanotechnology, 33(6) (6), 065702 - 065702
Abstract Hexagonal boron nitride (h-BN) is an important insulating layered material for two-dimensional heterostructure devices. Among many applications, few-layer h-BN films have been employed as superior tunneling barrier films. However, it is difficult to construct a heterostructure with ultra-thin h-BN owing to the poor visibility of flakes on substrates, especially on a metallic surface substrate. Since reflectance from a metallic surface is generally high, a h-BN film on a metallic surface does not largely influence reflection spectra. In the present study, a thin Au layer with a thickness of ∼10 nm deposited on a Si substrate with a thermally grown SiO2 was used for visualizing h-BN flakes. The thin Au layer possesses conductivity and transparency. Thus, the Au/SiO2/Si structure serves as an electrode and contributes to the visualization of an ultra-thin film according to optical interference. As a demonstration, the wavelength-dependent contrast of exfoliated few-layer h-BN flakes on the substrate was investigated under a quasi-monochromatic light using an optical microscope. A monolayer h-BN film was recognized in the image taken by a standard digital camera using a narrow band-pass filter of 490 nm, providing maximum contrast. Since the contrast increases linearly with the number of layers, the appropriate number of layers is identified from the contrast. Furthermore, the insulating property of a h-BN flake is examined using a conductive atomic force microscope to confirm whether the thin Au layer serves as an electrode. The tunneling current through the h-BN flake is consistent with the number of layers estimated from the contrast.[Refereed]Scientific journal - American Chemical Society (ACS), Jul. 2021, The Journal of Physical Chemistry C, 125(27) (27), 14991 - 14999[Refereed]Scientific journal
- American Chemical Society (ACS), Apr. 2021, ACS Omega, 6(14) (14), 9520 - 9527[Refereed]Scientific journal
- IOP Publishing, Sep. 2020, Journal of Physics D: Applied Physics[Refereed]Scientific journal
- American Chemical Society ({ACS}), Aug. 2020, ACS Applied Materials & Interfaces, 12(32) (32), 36428 - 36436[Refereed]Scientific journal
- IOP Publishing, Apr. 2020, Japanese Journal of Applied Physics, 59(SG) (SG), SGGL01 - SGGL01, English[Refereed]Scientific journal
- Corresponding, IOP Publishing, Mar. 2020, Japanese Journal of Applied Physics, 59(SD) (SD), SDDA09 - SDDA09, English[Refereed]Scientific journal
- Corresponding, IOP Publishing, Mar. 2020, Japanese Journal of Applied Physics, 59(SD) (SD), SDDA03 - SDDA03, English[Refereed]Scientific journal
- Corresponding, IOP Publishing, Mar. 2020, Japanese Journal of Applied Physics, 59(3) (3), 036503 - 036503, English[Refereed]Scientific journal
- {IOP} Publishing, Feb. 2020, Flexible and Printed Electronics[Refereed]Scientific journal
- Jan. 2020, JOURNAL OF PHYSICAL CHEMISTRY C, 124(1) (1), 1064 - 1069, English[Refereed]Scientific journal
- Nov. 2019, ORGANIC ELECTRONICS, 74, 245 - 250, English[Refereed]Scientific journal
- Oct. 2019, DATA IN BRIEF, 26, English[Refereed]Scientific journal
- May 2019, 2019 Compound Semiconductor Week, CSW 2019 - ProceedingsInternational conference proceedings
- May 2019, 2019 Compound Semiconductor Week, CSW 2019 - ProceedingsInternational conference proceedings
- Apr. 2019, JAPANESE JOURNAL OF APPLIED PHYSICS, 58, English[Refereed]Scientific journal
- Mar. 2018, JAPANESE JOURNAL OF APPLIED PHYSICS, 57(3) (3), 03EH03-1 - 03EH03-5, English[Refereed]Scientific journal
- 応用物理学会, Feb. 2017, 応用物理, 86(2) (2), 122 - 126, Japanese論理回路応用のための有機トランジスタ[Refereed]Scientific journal
- Corresponding, The Vacuum Society of Japan, Feb. 2017, Journal of the Vacuum Society of Japan, 60(11) (11), 415 - 420, Japanese[Refereed]Scientific journal
- Sep. 2016, Zairyo/Journal of the Society of Materials Science, Japan, 65(9) (9), 642 - 646, Japanese[Refereed]Scientific journal
- Apr. 2016, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 16(4) (4), 3295 - 3300, English[Refereed]Scientific journal
- Mar. 2016, JAPANESE JOURNAL OF APPLIED PHYSICS, 55(3) (3), English[Refereed]Scientific journal
- Mar. 2016, JAPANESE JOURNAL OF APPLIED PHYSICS, 55(3) (3), English[Refereed]Scientific journal
- Feb. 2016, JAPANESE JOURNAL OF APPLIED PHYSICS, 55(2) (2), English[Refereed]Scientific journal
- Apr. 2014, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(4) (4), 1 - 4, English[Refereed]Scientific journal
- Mar. 2014, APPLIED PHYSICS EXPRESS, 7(3) (3), 1 - 35701, English[Refereed]Scientific journal
- Jan. 2014, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(1) (1), 01AB03, English[Refereed]Scientific journal
- Feb. 2013, ORGANIC ELECTRONICS, 14(2) (2), 644 - 648, English[Refereed]Scientific journal
- 2013, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11, 10(11) (11), 1632 - 1635, English[Refereed]International conference proceedings
- Nov. 2012, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(11) (11), 1 - 11, English[Refereed]Scientific journal
- Feb. 2012, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(2) (2), 1 - 2, English[Refereed]Scientific journal
- Blackwell Publishing Ltd, 2012, Digest of Technical Papers - SID International Symposium, 43(1) (1), 1094 - 1096, EnglishInternational conference proceedings
- Lead, Dec. 2011, AIP Conference Proceedings, 1399(1) (1), 883, English[Refereed]International conference proceedings
- Dec. 2011, APPLIED PHYSICS EXPRESS, 4(12) (12), 1 - 121602, English[Refereed]Scientific journal
- Nov. 2011, 応用物理学会 有機分子・バイオエレクトロニクス分科会 会誌, Vol.22 No.4 pp.231-236, Japanese高速動作有機CMOS回路の実現に向けてScientific journal
- May 2011, APPLIED PHYSICS EXPRESS, 4(5) (5), 1 - 51601, English[Refereed]Scientific journal
- May 2011, 応用物理学会 有機分子・バイオエレクトロニクス分科会 会誌, Vol. 22 No.2 pp.71-74, English高速動作有機トランジスタに向けた有機無機界面制御Scientific journal
- Jan. 2011, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(1) (1), 1 - 1, English[Refereed]Scientific journal
- Jul. 2010, THIN SOLID FILMS, 518(18) (18), 5115 - 5120, English[Refereed]Scientific journal
- Jul. 2010, APPLIED PHYSICS LETTERS, 97(3) (3), 33306, English[Refereed]Scientific journal
- Apr. 2010, PROCEEDINGS OF THE JAPAN ACADEMY SERIES B-PHYSICAL AND BIOLOGICAL SCIENCES, 86(4) (4), 451 - 453, English, Domestic magazine[Refereed]Scientific journal
- Mar. 2010, NATURE, 464(7285) (7285), 31 - 31, English, International magazine[Refereed]
- 2010, OXIDE-BASED MATERIALS AND DEVICES, 7603, English[Refereed]International conference proceedings
- Dec. 2009, Applied Physics Letters, 95(25) (25), 253303 - 253303[Refereed]Scientific journal
- Jul. 2009, APPLIED PHYSICS LETTERS, 95(2) (2), English[Refereed]Scientific journal
- May 2009, APPLIED PHYSICS LETTERS, 94(21) (21), English[Refereed]Scientific journal
- Feb. 2009, APPLIED PHYSICS LETTERS, 94(8) (8), English[Refereed]Scientific journal
- Jan. 2009, THIN SOLID FILMS, 517(6) (6), 2079 - 2082, English[Refereed]Scientific journal
- Nov. 2008, APPLIED PHYSICS LETTERS, 93(21) (21), English[Refereed]Scientific journal
- Aug. 2008, APPLIED PHYSICS LETTERS, 93(6) (6), English[Refereed]Scientific journal
- Jul. 2008, APPLIED PHYSICS LETTERS, 93(3) (3), 33313, English[Refereed]Scientific journal
- May 2008, JOURNAL OF PHYSICS-CONDENSED MATTER, 20(18) (18), 1 - 16, English[Refereed]
- Feb. 2008, APPLIED PHYSICS EXPRESS, 1(2) (2), English[Refereed]Scientific journal
- 2008, IDW '08 - Proceedings of the 15th International Display Workshops, 2, 1507 - 1510, EnglishLow-voltage operating CMOS circuits with high field-effect mobility organic transistorsInternational conference proceedings
- Jan. 2008, NANO LETTERS, 8(1) (1), 260 - 264, English, International magazine[Refereed]Scientific journal
- 2008, PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 5(9) (9), 3181 - +, English[Refereed]International conference proceedings
- Nov. 2007, APPLIED PHYSICS LETTERS, 91(19) (19), English[Refereed]Scientific journal
- Oct. 2007, APPLIED PHYSICS LETTERS, 91(18) (18), English[Refereed]Scientific journal
- Jul. 2007, APPLIED PHYSICS LETTERS, 91(5) (5), English[Refereed]Scientific journal
- Apr. 2007, APPLIED PHYSICS LETTERS, 90(16) (16), English[Refereed]Scientific journal
- 2007, PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1, 4(1) (1), 90 - +, English[Refereed]International conference proceedings
- 2007, PROCEEDINGS OF THE IEEE TWENTIETH ANNUAL INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, VOLS 1 AND 2, 674 - +, EnglishFlexible organic LEDs with parylene thin films for biological implants[Refereed]International conference proceedings
- Lead, Nov. 2006, レーザー研究, 34(11) (11), 767 - 772, JapaneseOrganic Light-Emitting Devices Using Photonic Crystals[Refereed]Scientific journal
- Nov. 2006, APPLIED PHYSICS LETTERS, 89(22) (22), EnglishScientific journal
- Aug. 2006, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(8A) (8A), 6112 - 6115, English[Refereed]Scientific journal
- 2006, KOBUNSHI RONBUNSHU, 63(10) (10), 696 - 703, Japanese[Refereed]Scientific journal
- Wiley, Dec. 2005, Small, 1(12) (12), 1168 - 1172, English[Refereed]Scientific journal
- Oct. 2005, APPLIED PHYSICS LETTERS, 87(15) (15), EnglishScientific journal
- AIP Publishing, Aug. 2005, Applied Physics Letters, 87(8) (8), 083902 - 083902, English[Refereed]Scientific journal
- Apr. 2005, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(4B) (4B), 2844 - 2848, EnglishScientific journal
- 2005, 2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, 678 - 679, EnglishEnhanced light emission of an organic semiconductor based two-dimensional photonic crystal with a nanocavity[Refereed]International conference proceedings
- 2005, 2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3, 547 - 549, EnglishOrganic semiconductor based two-dimensional photonic crystal with a single defect[Refereed]International conference proceedings
- Jun. 2004, Macromolecular Rapid Communications, 25(12) (12), 1171 - 1174, English[Refereed]Scientific journal
- Apr. 2004, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(4B) (4B), 2326 - 2329, English[Refereed]Scientific journal
- Oct. 2003, APPLIED PHYSICS LETTERS, 83(16) (16), 3410 - 3412, English[Refereed]Scientific journal
- Apr. 2003, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(4B) (4B), 2483 - 2487, English[Refereed]Scientific journal
- Oct. 1999, JOURNAL OF OPTICS B-QUANTUM AND SEMICLASSICAL OPTICS, 1(5) (5), 546 - 556, EnglishScientific journal
- Jan. 1997, JOURNAL OF CRYSTAL GROWTH, 170(1-4) (1-4), 563 - 567, English[Refereed]Scientific journal
- Nov. 1996, IEICE TRANSACTIONS ON ELECTRONICS, E79C(11) (11), 1487 - 1494, EnglishGrowth and optical properties of self-assembled quantum dots for semiconductor lasers with confined electrons and photons[Refereed]Scientific journal
- Sep. 1996, PHYSICA B, 227(1-4) (1-4), 404 - 406, English[Refereed]Scientific journal
- 1996, 1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 750 - 752, EnglishFabrication and optical properties of self assembled InGaAs quantum dots embedded in microcavities[Refereed]International conference proceedings
- これまで行われてきた量子ドット構造の作製技術の研究の中で,特に薄膜の成長様式のひとつであるStranski-Krastanov(SK)成長モードによる自然形成技術に焦点を合わせて論じる。 まず量子ドット作製技術が満たすべき一般的要件およびStranski-Krastanov成長モードを用いた量子ドット作製の研究の流れについて概観する。これらをふまえ筆者らの成果を中心に論じている。成長温度,成長時間および使用する基板を変えたときのドットの形成の様子を明らかにし,ある成長時間以上で急激にドットの密度が高くなることを示した。また,ドットの形成は基板にも敏感で傾斜基板を使用すると同じ成長時間でもJust基板に比べてドットの密度が高いことを示した。さらにドットの形成について詳しく調べるためにAFMにより表面構造を観察した。マルチステップを形成することによりドットがステップ端に形成されやすいことを確かめた。また,この特徴を利用してステップに沿ってドットを配列することに成功した。Surface Science Society Japan, Oct. 1995, Hyomen Kagaku, 16(10) (10), 624 - 630, Japanese[Refereed]Scientific journal
- Aug. 1995, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 34(8B) (8B), 4376 - 4379, English[Refereed]Scientific journal
- Jun. 1995, APPLIED PHYSICS LETTERS, 66(26) (26), 3663 - 3665, English[Refereed]Scientific journal
- 1995, SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 763 - 765, English[Refereed]International conference proceedings
- Lead, IOP Publishing, 01 Jan. 2025, Japanese Journal of Applied Physics, 64(1) (1), 010001 - 010001, English[Refereed][Invited]
- Lead, IOP Publishing, 01 Jun. 2022, Japanese Journal of Applied Physics, 61(SE) (SE), SE0001 - SE0001, English[Invited]Introduction scientific journal
- Lead, IOP Publishing, 01 May 2017, Japanese Journal of Applied Physics, 56(5S2) (5S2), 05E001 - 05E001, English[Invited]
- Lead, IOP Publishing, 01 Mar. 2016, Japanese Journal of Applied Physics, 55(3S2) (3S2), 03D001 - 03D001
- The Institute of Electronics, Information and Communication Engineers, 24 Feb. 2015, Proceedings of the IEICE General Conference, 2015(2) (2), 38 - 38, JapaneseC-9-2 Research Progress of Organic Thin-Film Transistors and Prospects of Commercial Products
- Large conductance C_<60> thin-film transistorsBottom-contact C_<60> thin-film transistors (TFTs) have been fabricated. The channel lengths (L) ranged from 5 to 40μm. The saturation mobilities slightly depended on the channel length, ranging from 2.45 to 3.23cm^2/Vs. The highest mobility of 3.23cm^2/Vs was obtained from a TFT with L=5μm. The TFT had a conductance of 119μS/mm; which is relative high as compared to conventional organic TFTs. To investigate the reason that the short channel TFTs has high mobilities, we examined parasitic resistance. The calculated parasitic resistance was less than 1kWcm. The low parasitic resistance causes high mobility of the TFTs with with L=5μm.The Institute of Electronics, Information and Communication Engineers, 24 Oct. 2008, IEICE technical report, 108(272) (272), 9 - 14, Japanese
- 30 May 2008, Molecular electronics and bioelectronics, 19(2) (2), 65 - 68, Japanese有機トランジスタの低電圧動作・高性能化とCMOS応用
- 日本工業出版, Jan. 2008, 画像ラボ, 19(1) (1), 9 - 12, Japanese低電圧動作有機CMOS回路--フレキシブルディスプレイへの応用を目指して
- 26 Nov. 2007, Molecular electronics and bioelectronics, 18(4) (4), 297 - 302, Japanese有機薄膜トランジスタの低電圧動作と閾値電圧
- High field-effect-mobility organic thin-film transistors using high dielectric constant gate insulatorsWe report high-performance organic-based thin-film transistors (TFTs) with high dielectric constant gate insulators operating at low voltages. The gate insulators are Ti_<1-x>Si_xO_2 films, which were deposited by RF sputtering. The dielectric constant and surface roughness depends on the concentration of SiO_2 in Ti_<1-x>Si_xO_2 films. The Ti_<1-x>Si_xO_2 films with x ≥ 0.17 have flat surfaces. Pentacene TFTs with Ti_<1-x>Si_xO_2 gate insulators were fabricated and can operate at drain voltages of V_D≤-1 V at least. The field effect mobilities obtained at V_D≤-2 V are more than 1.0 cm^2/Vs. The pentacene TFT exhibits high performance with a threshold voltage of-1.6 V, an inverse subthreshold slope of 0.13 V/decade and a current on/off ratio of 1×10^7.The Institute of Electronics, Information and Communication Engineers, 11 Dec. 2006, IEICE technical report, 106(439) (439), 59 - 64, Japanese
- 15 Sep. 2004, Extended abstracts of the ... Conference on Solid State Devices and Materials, 2004, 160 - 161, EnglishEnhanced Luminance Efficiency from Organic Light-Emitting Diodes with 2D Photonic Crystal
- Contributor, 第5章第5節VOC検出のための気体センサの開発と肺がんスクリーニング, 技術情報協会, Oct. 2020, Japanese, ISBN: 9784861048104においのセンシング、分析とその可視化、数値化
- 第II編 第2章 酸化物半導体ガスセンサ, シーエムシー出版, Aug. 2020, Japanese, ISBN: 9784781315157匂いのセンシング技術
- Contributor, 第2章 第5節 電極表面処理技術と物性評価, シーエムシー出版, Nov. 2016, 145-153, Japanese, ISBN: 9784781311906IoTを指向するバイオセンシング・デバイス技術Textbook
- Contributor, 第7章 第1節,第1項 過渡光電流解析,第3項 高周波伝導特性, テクノシステム, Jan. 2013, 415-417, 420-422, Japanese, ISBN: 9784924728677薄膜の評価技術ハンドブック
- Contributor, 第4章低電圧化, シーエムシー出版, 2005, 117-128, Japanese, ISBN: 4882315106有機トランジスタ材料の評価と応用Textbook
- Single work, 東京大学数理科学研究科, 2000Analysis of complex excitons and its optical properties = 多体励起子状態及びその光学応答に関する研究
- 薄膜材料デバイス研究会第20回研究集会, Nov. 2023, Japaneseフォトマスクを用いた酸化金のパターニング形成Poster presentation
- 薄膜材料デバイス研究会第20回研究集会, Nov. 2023, Japanese光電子収量分光法によるIn7GaZnO13薄膜の仕事関数測定Poster presentation
- 薄膜材料デバイス研究会第20回研究集会, Nov. 2023, Japanese二層構造InGaZnO4/In5GaZnO10から成る薄膜トランジスタの特性評価Poster presentation
- 薄膜材料デバイス研究会第20回研究集会, Nov. 2023, Japanese光学顕微鏡を用いたチオール有機単分子膜のパターニング評価Poster presentation
- The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotecnologies, Jun. 2023, EnglishCoverage control of a phosphonic acid monolayer on an InGaZnO surfacePoster presentation
- 第70応用物理学関係連合講演会, Mar. 2023, Japaneseスパッタリングにより作製したIn5GaZnO10薄膜トランジスタの特性評価Oral presentation
- 第70応用物理学関係連合講演会, Mar. 2023, Japanese有機薄膜形成のためのインクジェット法による親水疎水パターニングを用いた液摘挙動制御Poster presentation
- 第70応用物理学関係連合講演会, Mar. 2023, Japanese層状物質の厚い膜に存在する単層分の厚さの違いを検知する手法Poster presentation
- 薄膜材料デバイス研究会第19回研究集会, Nov. 2022, JapaneseIn5GaZnO10 薄膜をチャネル層とする電界効果トランジスタの特性評価Poster presentation
- 薄膜材料デバイス研究会第19回研究集会, Nov. 2022, Japanese光電子収量分光法によるInGaZnO薄膜のバンド構造解析Poster presentation
- 第83回応用物理学会秋季学術講演会, Sep. 2022, JapaneseIn5GaZnO10薄膜トランジスタの特性評価Poster presentation
- 第83回応用物理学会秋季学術講演会, Sep. 2022, Japanese大気中光電子収量分光法による原子比率の異なるInGaZnO 薄膜の仕事関数評価Poster presentation
- 第83回応用物理学会秋季学術講演会, Sep. 2022, Japanese塗布型有機薄膜トランジスタのためのUV/オゾン処理有機単分子膜の改質Poster presentation
- 第69応用物理学関係連合講演会, Mar. 2022, Japanese大気中光電子収量分光法によるInGaZnO薄膜のエネルギーバンド構造解析Poster presentation
- 第69応用物理学関係連合講演会, Mar. 2022, Japanese金極薄膜を用いた単層h-BNの可視化Oral presentation
- MRS FALL MEETING, Dec. 2021, EnglishOrganic thin-film transistors for high performance logic circuits: Realization of short channel, high mobility, low contact resistance and threshold voltage control[Invited]Invited oral presentation
- 薄膜材料デバイス研究会 第18回研究集会「結晶成長技術とデバイスの新展開」, Nov. 2021, Japanese金属顕微鏡を用いたアルカンチオール単分子有機膜の可視化Oral presentation
- 応用物理学会関西支部 2021年度第2回講演会, Oct. 2021, Japanese疎水性単分子膜を修飾した基板上への塗布法用い有機半導体薄形成技術Poster presentation
- 応用物理学会関西支部 2021年度第2回講演会, Oct. 2021, Japanese塗布法による有機半導体薄膜の製膜において 2度塗りした際の薄膜形成メカニズムPoster presentation
- 11th International Conference on Flexbile and Printed Electronics, EnglishOrganic monolayers modified by ultraviolet-ozone for solutionprocessed organic thin-film transistorsPoster presentation
- 応用物理学会関西支部 2021年度第1回講演会, Apr. 2021, Japanese撥水性基板上にスピンコート法を用いて作製した有機薄膜ラジタの評価」Poster presentation
- 応用物理学会関西支部 2021年度第1回講演会, Apr. 2021, Japanese光電子収量分法による酸素プラズマ処理したSiO2絶縁膜表面のエネルギー準位分析Poster presentation
- 応用物理学会関西支部 2021年度第1回講演会, Apr. 2021, Japanese光学顕微鏡による的異方性を持つ単分子有機薄膜の観察と画像処理解析Poster presentation
- IEEE EDS Kansai Chapter 第20回「関西コロキアム電子デバイスワークショップ」, Nov. 2020, JapaneseBottom-contact pentacene thin-film transistor with threshold voltages controlled by oxygen plasma treatment[Invited]Invited oral presentation
- 薄膜材料デバイス研究会 第17回研究集会「薄膜デバイスの原点」, Nov. 2020, Japanese酸素プラズマ処理により生じる有機半導体/ゲート絶縁膜界面準位のエネルギー分布Oral presentation
- 39th Electronic Materials Symposium, Oct. 2020, JapaneseEvaluation of carrier mobility in organic metal-oxide-semiconductor capacitorsPoster presentation
- 39th Electronic Materials Symposium, Oct. 2020, JapaneseHighly thermal-stable monolayers formed on a gold surface using benzenedithiolPoster presentation
- 第67応用物理学関係連合講演会, Mar. 2020, Japanese酸素プラズマ処理が与える有機半導体/絶縁膜界面準位への影響Others
- 第67応用物理学関係連合講演会, Mar. 2020, Japanese偏光顕微鏡を用いた単層DPh-DNTT二次元核の方位決定Others
- 応用物理学会関西支部 2019年度第2回講演会, Nov. 2019, JapaneseSnOx を用いたpチャネル薄膜トランジスタに対するスパッタパワーと圧力の影響Poster presentation
- 薄膜材料デバイス研究会 第16回研究集会, Nov. 2019, Japaneseガスセンサ応用に向けたSnO2薄膜トランジスタの電流安定性評価Poster presentation
- 薄膜材料デバイス研究会 第16回研究集会, Nov. 2019, Japaneseパッシベーション膜を有するpチャネルSnOx薄膜トランジスタPoster presentation
- 薄膜材料デバイス研究会 第16回研究集会, Nov. 2019, Japaneseフルオロベンゼンチオールを電極表面に修飾した有機薄膜トランジスタOral presentation
- 38th Electronic Materials Symposium, Oct. 2019, JapaneseStatistical study of shape for submonolayer 2D islands of DPh-DNTT prepared by vacuum depositionPoster presentation
- 第80回応用物理学会学術講演会, Sep. 2019, Japanese金表面に形成したベンゼンジチオール単分子膜の耐熱性評価Poster presentation
- 第80回応用物理学会学術講演会, Sep. 2019, JapaneseMOSキャパシタ構造を利用した有機半導体中のキャリア移動度評価Oral presentation
- 第80回応用物理学会学術講演会, Sep. 2019, Japanese単層 DPh-DNTT の2次元アイランドにおける異方性Oral presentation
- 第80回応用物理学会学術講演会, Sep. 2019, Japanese酸化物半導体ガスセンサの研究開発の現状:高感度水素検出に向けて[Invited]Invited oral presentation
- IEEE EDS Kansai Chapter 第19回「関西コロキアム電子デバイスワークショップ」, Sep. 2019, JapaneseLogic circuits consisting of pentacene thin-film transistors with controlled threshold voltages[Invited]Invited oral presentation
- International Conference on Solid State Devices and Materials, Sep. 2019, EnglishBottom-contact pentacene thin-film transistor with threshold voltages controlled by oxygen plasma treatmentPoster presentation
- 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructure, Sep. 2019, EnglishA p-channel SnOx thin-film transistor with a SiO2 passivation layerPoster presentation
- 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructure, Sep. 2019, EnglishCurrent stability in SnO2 thin-film transistors with ultra-thin channel layers toward gas sensor applicationPoster presentation
- 応用物理学会関西支部 2019年度第1回講演会, Jun. 2019, Japanese有機薄膜トランジスタにおける酸素プラズマを用いたパターニングPoster presentation
- 応用物理学会関西支部 2019年度第1回講演会, Jun. 2019, JapaneseUV/ozone処理を用いた熱酸化膜上単分子膜の被覆率操作Poster presentation
- 10th International Conference on Molecular Electronics and Bioelectronics, Jun. 2019, EnglishSurface properties of oriented polytetrafluoroethylene films with a micrometer pitchPoster presentation
- 10th International Conference on Molecular Electronics and Bioelectronics, Jun. 2019, EnglishThe formation of a mixed monolayer on a gold surface toward surface property controlPoster presentation
- 10th International Conference on Molecular Electronics and Bioelectronics, Jun. 2019, EnglishHigh thermal stability of the benzenedithiol monolayer formed on a gold surfacePoster presentation
- Compound Semiconductor Week, May 2019, EnglishNucleation and shape of 2D islands of DPh-DNTT thin-films prepared by vacuum evaporationOral presentation
- Compound Semiconductor Week, May 2019, EnglishVoltage and frequency dependence of capacitance characteristics in organic MOS capacitorsPoster presentation
- Compound Semiconductor Week, May 2019, EnglishThin-film transistors based on copper phthalocyanine deposited on a gate dielectric rubbed with poly(tetrafluoroethylene)Poster presentation
- 日本学術振興会透明酸化物光・電子材料第166委員会 第83回研究会, Apr. 2019, Japanese酸化物半導体薄膜のガスセンサ応用:揮発性有機化合物の識別可能性[Invited]Invited oral presentation
- 第66応用物理学関係連合講演会, Mar. 2019, Japanese酸素プラズマ処理によるボトムコンタクト型有機トランジスタの閾値電圧制御Poster presentation
- 第66応用物理学関係連合講演会, Mar. 2019, Japanese有機MOSキャパシタの電圧・周波数特性解析Oral presentation
- 第66応用物理学関係連合講演会, Mar. 2019, Japanese真空蒸着法におけるDNTTとその誘導体の核形成機構Oral presentation
- 応用物理学会関西支部 平成30年度第3回講演会, Feb. 2019ガスセンサ応用に向けた酸化スズ薄膜トランジスタの電流電圧特性の安定性評価
- 第64応用物理学関係連合講演会, Mar. 2017, Japanese, Domestic conference水晶振動子センサを用いたベンゼンチオール単分子膜に依存した大気中水分子吸着特性の評価Oral presentation
- 日本真空学会関西支部 第9回実用技術セミナー, Jan. 2017, Japanese, Domestic conferenceガスセンサ・バイオセンサのための材料作製技術[Invited]Invited oral presentation
- 1st Bilateral Workshop on Research Exchange between National Taiwan University and Kobe University, Dec. 2016, English, International conferenceRecent Research on Physical Electronics in the Department of Electrical and Electronic EngineeringInvited oral presentation
- 23rd International Display Workshops in conjunction with Asia Display, Dec. 2016, English, International conferenceFundamental technology for organic transistors and their application to sensor devices[Invited]Invited oral presentation
- 大阪府立大学21世紀化学研究機構 分子エレクトロニックデバイス研究所 第18回研究会, Nov. 2016, Japanese, Domestic conference背面露光法による自己整合電極を有するペンタセン薄膜トランジスタPoster presentation
- 大阪府立大学21世紀化学研究機構 分子エレクトロニックデバイス研究所 第18回研究会, Nov. 2016, Japanese, Domestic conference電極表面をベンゼンチオール誘導体で修飾したボトムコンタクト型C60トランジスタPoster presentation
- 大阪府立大学21世紀化学研究機構 分子エレクトロニックデバイス研究所 第18回研究会, Nov. 2016, Japanese, Domestic conferenceデバイス応用のための界面・表面の物性制御 ~有機トランジスタの閾値電圧制御を中心に~[Invited]Invited oral presentation
- 薄膜材料デバイス研究会 第13回研究集会, Oct. 2016, Japanese, Domestic conferenceアニールによるSnOx薄膜を利用したpチャネル薄膜トランジスタPoster presentation
- 電子情報通信学会 有機エレクトロニクスデバイス・材料に関する研究討論会, Sep. 2016, Japanese, Domestic conference有機トランジスタの回路応用と閾値電圧制御[Invited]Invited oral presentation
- 35th Electronic Materials Symposium, Jul. 2016, Japanese, Domestic conferenceOptimization in microwave synthesis of copper phthalocyanine for organic thin-film transistorsPoster presentation
- 第63応用物理学関係連合講演会, Mar. 2016, Japanese, 東京, Domestic conference背面露光法を利用して作製した表面処理電極を有するペンタセン薄膜トランジスタPoster presentation
- 第63応用物理学関係連合講演会, Mar. 2016, Japanese, 東京, Domestic conferenceボトムコンタクト型フラーレンC60トランジスタの電極表面処理効果Poster presentation
- 応用物理学会関西支部 平成27年度第3回講演会, Feb. 2016, Japanese, 大阪, Domestic conference酸素プラズマ処理によるDNTTトランジスタの閾値電圧への影響Poster presentation
- ナノ量子情報エレクトロニクス連携研究拠点成果報告シンポジウム, Feb. 2016, Japanese, 東京, Domestic conference高性能有機薄膜トランジスタの実現と新たな展開[Invited]Invited oral presentation
- 応用物理学会関西支部 平成27年度第3回講演会, Feb. 2016, Japanese, 大阪, Domestic conferenceスパッタリング製膜したSnOxのアニールにより作製したpチャネル薄膜トランジスタPoster presentation
- 薄膜材料デバイス研究会 第12回研究集会, Oct. 2015, Japanese, 京都, Domestic conference酸素プラズマ処理によるDNTTトランジスタの閾値電圧制御Oral presentation
- 応用物理学会関西支部 平成27年度第2回講演会, Sep. 2015, Japanese, 大阪, Domestic conferenceベンゼンチオール誘導体単分子膜を用いた金属表面の物性制御Poster presentation
- 34th Electronic Materials Symposium, Jul. 2015, Japanese, 滋賀, Domestic conferencePhysical properties of metal surfaces modified with substituted-benzenethiol[Invited]Poster presentation
- 34th Electronic Materials Symposium, Jul. 2015, Japanese, 滋賀, Domestic conferenceAnnealing effect on the electrical properties in fluorinated copper phthalocyanine films for organic photovoltaic applications[Invited]Poster presentation
- 8th International Conference on Molecular Electronics and Bioelectronics, Jun. 2015, English, 東京, International conferenceWettability properties of substituted-benzenethiol monolayers on silver and gold surfaces[Invited]Poster presentation
- 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, Jun. 2015, English, 新潟, International conferenceOperational Stability in Pentacene Thin-Film Transistors with Threshold Voltages Tuned by Oxygen Plasma Treatment[Invited]Oral presentation
- 8th International Conference on Molecular Electronics and Bioelectronics, Jun. 2015, English, 東京, International conferenceDinaphthothienothiophen Thin-Film Transistors with Threshold Voltage Shift Induced by Oxygen Plasma[Invited]Poster presentation
- 8th International Conference on Molecular Electronics and Bioelectronics, Jun. 2015, English, 東京, International conferenceCopper phthalocyanine synthesized by microwave irradiation and the application to thin-film transistors[Invited]Poster presentation
- 応用物理学会 有機分子・バイオエレクトロニクス分科会「有機分子・バイオエレクトロニクスの最新動向」, May 2015, Japanese, 富山, Domestic conferenceベンゼンチオール誘導体修飾による金表面の物性変化:仕事関数とその熱安定性および水接触角Oral presentation
- 東京大学ナノ量子情報エレクトロニクス研究機構 ナノ量子情報エレクトロニクスセミナー, Apr. 2015, Japanese, 東京, Domestic conference有機薄膜トランジスタの研究開発~高性能・高機能トランジスタの実現を目指して~[Invited]Invited oral presentation
- 2015年総合大会講演論文集, Mar. 2015, Japanese, 電子情報通信学会, 滋賀, Domestic conference有機薄膜トランジスタの研究開発と実用化に向けた展望[Invited]Invited oral presentation
- 第62応用物理学関係連合講演会, Mar. 2015, Japanese, 応用物理学会, 神奈川, Domestic conferenceベンゼンチオール誘導体による修飾表面の濡れと安定性Poster presentation
- 11th International conference on Nano-Molecular Electronics, Dec. 2014, English, Kobe, International conferenceWettability Control of Gold Surfaces Modified with Benzenethiol Derivatives[Invited]Oral presentation
- 第75回応用物理学会学術講演会, Sep. 2014, Japanese, 応用物理学会, 札幌, Domestic conference有機薄膜トランジスタの閾値電圧制御:集積回路応用に向けてOral presentation
- 第75回応用物理学会学術講演会, Sep. 2014, Japanese, 応用物理学会, 札幌, Domestic conferenceベンゼンチオール誘導体を用いた金属表面の濡れ性制御Poster presentation
- 第75回応用物理学会学術講演会, Sep. 2014, Japanese, 応用物理学会, 札幌, Domestic conferenceジナフトチエノチオフェン骨格を有するn 型有機トランジスタ材料の設計Poster presentation
- International Conference on Solid State Devices and Materials, Sep. 2014, English, Ibaragi, International conferencePentacene Thin-Film Transistors with Controlled Threshold Voltages andTheir Application to Pseudo CMOS Inverters[Invited]Oral presentation
- International Conference on Solid State Devices and Materials, Sep. 2014, English, Ibaragi, International conferenceAnnealing Effect on Field-Effect Mobilities in Bottom-Contact Alkylated Dinaphthothienothiophene Transistors[Invited]Oral presentation
- 第33回電子材料シンポジウム, Jul. 2014, Japanese, Shizuoka, Domestic conferenceThreshold voltage control in organic thin-film transistors by oxygen plasma treatment[Invited]Poster presentation
- 公開シンポジウム「ナノ量子情報エレクトロニクスの新展開」, May 2014, Japanese, 東京, Domestic conference有機薄膜トランジスタの閾値電圧制御と擬似CMOS回路への応用Poster presentation
- 公開シンポジウム「ナノ量子情報エレクトロニクスの新展開」, May 2014, Japanese, 東京, Domestic conference有機デバイス応用に向けたフッ素化銅フタロシアニンの膜構造および電気的特性に対するアニール効果Poster presentation
- 公開シンポジウム「ナノ量子情報エレクトロニクスの新展開」, May 2014, Japanese, 東京, Domestic conference高性能・高速動作有機薄膜トランジスタの開発Nominated symposium
- 6th Asian Coating Workshop, May 2014, English, Kobe, International conferenceSolution-processed organic thin-film transistors[Invited]Invited oral presentation
- 第61応用物理学関係連合講演会, Mar. 2014, Japanese, 応用物理学会, 神奈川, Domestic conference閾値電圧制御された有機トランジスタから成る擬似CMOS回路Oral presentation
- 第61応用物理学関係連合講演会, Mar. 2014, Japanese, 応用物理学会, 神奈川, Domestic conference表面処理電極を有するボトムコンタクト型アルキルDNTTトランジスタOral presentation
- 第61応用物理学関係連合講演会, Mar. 2014, Japanese, 応用物理学会, 神奈川, Domestic conferenceフッ素化銅フタロシアニンの膜構造および電気的特性へのアニール効果Poster presentation
- 第10回研究集会「薄膜デバイスの応用展開」, Oct. 2013, Japanese, 薄膜材料デバイス研究会, 京都, Domestic conference擬似CMOS 回路への応用に向けた有機薄膜トランジスタの閾値電圧制御Oral presentation
- 第4回 有機分子・バイオエレクトロニクスの未来を拓く若手研究者討論会, Sep. 2013, Japanese, 応用物理学会 有機分子・バイオエレクトロニクス分科会, 京都, Domestic conference有機トランジスタは実用化されるか ~ 若手研究者に向けて~Invited oral presentation
- 第74回応用物理学会学術講演会, Sep. 2013, Japanese, 応用物理学会, 京都, Domestic conference酸素プラズマ処理による有機トランジスタの閾値電圧精密制御Oral presentation
- 第74回応用物理学会学術講演会, Sep. 2013, Japanese, 応用物理学会, 京都, Domestic conferenceボトムコンタクト型アルキルDNTT 薄膜トランジスタの安定性評価Poster presentation
- Society for Information Display International Symposium, Sep. 2013, English, The Japan Society of Applied Physics, Fukuoka, International conferenceThermal Stability of Short Channel, High-Mobility Organic Thin-Film Transistors having Bottom-Contact Configuration[Invited]Poster presentation
- Society for Information Display International Symposium, Sep. 2013, English, The Japan Society of Applied Physics, Fukuoka, International conferenceStructural and Electrical Properties of Fluorinated Copper Phthalocyanine for Organic Photovoltaics[Invited]Oral presentation
- 40th International Symposium on Compound Semiconductors, May 2013, English, The Japan Society of Applied Physics, Fukuoka, International conferenceThreshold Voltage Control in Pentacene Thin-Film Transistors by Oxygen Plasma Treatment[Invited]Poster presentation
- 40th International Symposium on Compound Semiconductors, May 2013, English, The Japan Society of Applied Physics, Fukuoka, International conferenceShort-Channel, High-Mobility Organic Thin-Film Transistors with Alkylated Dinaphthothienothiophene[Invited]Oral presentation
- 40th International Symposium on Compound Semiconductors, May 2013, English, The Japan Society of Applied Physics, Fukuoka, International conferenceFine tuning of energy levels in partially fluorinated copper phthalocyanine for organic photovoltaics[Invited]Poster presentation
- 第60応用物理学関係連合講演会, Mar. 2013, Japanese, 応用物理学会, 神奈川, Domestic conference酸素プラズマ処理による有機薄膜トランジスタの閾値電圧制御Poster presentation
- 第60応用物理学関係連合講演会, Mar. 2013, Japanese, 応用物理学会, 神奈川, Domestic conferenceアルミ電極を有するアルキルDNTT薄膜トランジスタPoster presentation
- 7th International Conference Molecular Electronics and Bioelectronics, Mar. 2013, English, Division of Molecular Electronics and Bioelectronics- The Japan Society of Applied Physics, Fukuoka, International conferencePartially Fluorinated Copper Phthalocyanine toward Band Engineering for High-Efficiency Organic Photovoltaics[Invited]Oral presentation
- 7th International Conference Molecular Electronics and Bioelectronics, Mar. 2013, English, Division of Molecular Electronics and Bioelectronics- The Japan Society of Applied Physics, Fukuoka, International conferenceDinaphthothienothiophene Thin-Film Transistors with Aluminum/Molybdenum Oxide Electrodes[Invited]Poster presentation
- 第9回研究集会「薄膜デバイスの未来」, Nov. 2012, Japanese, 薄膜材料デバイス研究会, 奈良, Domestic conference高性能有機CMOS回路-高速動作はどこまで可能か-Invited oral presentation
- 第73回応用物理学会学術講演会, Sep. 2012, Japanese, 応用物理学会, 愛媛, Domestic conference高移動度ボトムコンタクト型アルキルDNTT薄膜トランジスタOral presentation
- 第73回応用物理学会学術講演会, Sep. 2012, Japanese, 応用物理学会, 愛媛, Domestic conferenceボトムコンタクト型DNTT薄膜トランジスタの大気安定性Poster presentation
- 第73回応用物理学会学術講演会, Sep. 2012, Japanese, 応用物理学会, 愛媛, Domestic conferenceインクジェット印刷法による高性能C60薄膜トランジスタInvited oral presentation
- The 2012 International Conference on Flexible and Printed Electronics, Sep. 2012, English, Tokyo, International conferenceThreshold Voltage Shift of Inkjet-Printed C8-BTBT Thin-Film Transistors[Invited]Oral presentation
- International Conference on Solid State Devices and Materials, Sep. 2012, English, The Japan Society of Applied Physics, Kyoto, International conferenceDinaphtho Thieno Thiophene Thin-Film Transistors with Modified Platinum Electrodes in Bottom-Contact Configuration[Invited]Oral presentation
- Society for Information Display International Symposium, Jun. 2012, English, Boston, International conferenceHigh-Performance Ink-Jet-Printed TFTs on Solution Wetting Polymer Gate Dielectric Layer[Invited]Poster presentation
- 第2回物質・デバイス領域共同研究拠点活動報告会, Apr. 2012, Japanese, 物質・デバイス領域共同研究拠点, 東京, Domestic conference有機半導体を用いた高性能CMOSのための n 型 半導体基板開発Others
- Materials Research Society Spring Meeting, Apr. 2012, English, San Francisco, International conferenceSolution-processed C60 Single Crystal Field-effect Transistors[Invited]Oral presentation
- Materials Research Society Spring Meeting,, Apr. 2012, English, Materials Research Society, USA, International conferenceSolution-processed C60 Single Crystal Field-effect Transistors[Invited]Oral presentation
- 第59応用物理学関係連合講演会, Mar. 2012, Japanese, 応用物理学会, 東京, Domestic conference白金電極を有するボトムコンタクト型DNTT薄膜トランジスタPoster presentation
- 第59応用物理学関係連合講演会, Mar. 2012, Japanese, 応用物理学会, 東京, Domestic conference酸化モリブデン/アルミ電極を有するDNTT薄膜トランジスタ/アルミ電極を有するDNTT薄膜トランジスタPoster presentation
- 第59応用物理学関係連合講演会, Mar. 2012, Japanese, 応用物理学会, 東京, Domestic conferenceインクジェット法による高均一非晶質C60薄膜の作製と高移動度(>2.4 cm2/V・s) n-channelトランジスタの実現/V・s) n-channelトランジスタの実現Oral presentation
- 平成23年度 物質・デバイス共同研究拠点 共同研究 特定研究[A-4] ワークショップ, Feb. 2012, Japanese, 物質・デバイス領域共同研究拠点, 大阪, Domestic conference有機半導体を用いた高性能CMOSのための n 型 半導体基板開発Others
- International Conference on Solid State Devices and Materials, Sep. 2011, English, The Japan Society of Applied Physics, Aichi, International conferenceSolution-processed C60 field-effect transistors with high mobility[Invited]Oral presentation
- 5th East Asia Symposium on Functional Dyes & Advanced Materials, Sep. 2011, English, East Asia Symposium, China, International conferenceHigh-frequency-operating organic thin-film transistors and CMOS circuits[Invited]Invited oral presentation
- 第72回応用物理学会学術講演会, Aug. 2011, Japanese, 応用物理学会, 山形, Domestic conference塗布工程による高移動度C60薄膜トランジスタの作製Oral presentation
- 第72回応用物理学会学術講演会, Aug. 2011, Japanese, 応用物理学会, 山形, Domestic conference高速動作有機CMOSリングオシレータ:発振周波数 200 kHzOral presentation
- 第72回応用物理学会学術講演会, Aug. 2011, Japanese, 応用物理学会, 山形, Domestic conference化学結合で積層したオリゴチオフェン積層膜と同じ分子構造を有するLB膜の分子配向の比較Oral presentation
- 応用物理学会 M&BE研究会「有機分子・バイオエレクトロニクスの動向と展望」, Jun. 2011, Japanese, 応用物理学会 有機分子・バイオエレクトロニクス分科会, 神戸, Domestic conference高速動作有機トランジスタに向けた有機無機界面制御[Invited]Oral presentation
- 30th Electronic Materials Symposium, Jun. 2011, English, Electronic Materials Symposium, Shiga, Domestic conference200-kHz-operation of organic CMOS ring oscillator[Invited]Oral presentation
- 第58応用物理学関係連合講演会, Mar. 2011, Japanese, 応用物理学会, 神奈川, Domestic conferenceSolution processed C60 fullerene thin-film transistorsOthers
- 第58応用物理学関係連合講演会, Mar. 2011, Japanese, 応用物理学会, 神奈川, Domestic conferenceRectification Properties of Pentacene Transistor DiodesOthers
- 6th International Conference on Molecular Electronics and Bioelectronics, Mar. 2011, English, The Japan Society of Applied Physics, Division of Molecular Electronics and Bioelectronics, JSAP, Miyagi, International conferenceFrequency property of a rubrene single-crystal field-effect transistor[Invited]Others
- 6th International Conference on Molecular Electronics and Bioelectronics, Mar. 2011, English, The Japan Society of Applied Physics, Division of Molecular Electronics and Bioelectronics, JSAP, Miyagi, International conferenceA high frequency organic CMOS ring oscillator operating at 100 kHz[Invited]Others
- 第56回応用物理学会学術講演会, Aug. 1995, Japanese量子ドットを有する微小共振器レーザの構造の作製
- 第42回応用物理学関係連合講演会, Mar. 1995, Japaneseマルチステップを利用した InGaAs 量子ドットの自然配列
- 第42回応用物理学関係連合講演会, Mar. 1995, Japanese格子不整合を利用したマルチステップ上の InGaAs 量子細線の作製
- 14th Electronic Materials Symposium, 1995, JapaneseIn-situ Fabrication of Self-Aligned InGaAs Quantum Dots on GaAs Multi-Atomic Steps by MOCVDPoster presentation
- 第5回情報処理学会東北支部研究会, Mar. 1994, JapaneseBEM-FDM 結合法を用いたスフェロマック・プラズマの MHD 平衡解析Oral presentation
■ Research Themes
- 日本学術振興会, 科学研究費助成事業, 基盤研究(B), 神戸大学, 01 Apr. 2024 - 31 Mar. 2028ヘテロ接合型薄膜デバイスへの応用に向けた酸化インジウム化合物のバンド構造制御
- 日本学術振興会, 科学研究費助成事業, 基盤研究(A), 神戸大学, Apr. 2021 - Mar. 2024超フレキシブル有機圧電型発電/拍動検知デバイス開発と生体内駆動の検証本年度は、フレキシブル有機強誘電体フィルムの作製、強誘電/圧電特性の基礎評価に加え、心臓拍動のように臓器変形が伝搬していく複雑な臓器変形を検知するため、多素子センサを作製し、多点測定を試みた。PENフィルム上に、下部電極としてAl100 nmを真空蒸着した後、強誘電性高分子P(VDF/TrFE)をスピンコート成膜した。上部電極としてAl薄膜を真空蒸着し、キャパシタ型圧電センサーとした。上下電極はパターニングすることで、9つの圧電センサからなる拍動検出用センサー素子とした。デバイス保護、生体適合性のため、素子全面には気相重合法によりparylene Cを堆積してデバイス封止した。全センサー部をポーリング処理し、分極方向を一方向に揃え、かつ残留分極量Prを60mC/m2に揃えた。成人男性3D-X線CT画像から復元した心臓拍動モデルに、試作した多素子センサを貼り付け、正常拍動(60bpm)におけるセンサー出力を詳細解析した。すべての素子で、心臓モデル収縮時に負、膨張時に正の出力電圧が得られたが、センサ貼り付け位置によって出力電圧のピーク時間と電圧値には違いを観察した。「ピーク時間」の違いは拍動挙動(動き方)が場所によって異なることを、「電圧値の違い」は変位速度が異なること示差しており、心臓モデルの変形が右心室から左心室側へ伝搬していく複雑な心拍挙動の観測に成功した。また出力電圧の時間変化を圧電方程式に基づき応力変換することで、心臓モデル表面にかかる応力を計算した。心臓の電気的活動を体表電極で読み取る心電図と異なり、試作したフレキシブル圧電フィルムは心臓変形そのものをリアルタイム検出しており、かつ心臓表面にかかる応力(心筋力)が検出可能であることから、心膜炎等の心臓組織表面の疾患の早期発見が可能であると考えられる。また新規導入したマスクレス露光機の立ち上げ、及び条件出しも行った。
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), Kobe University, Apr. 2019 - Mar. 2022Fundamental development for realization of high-performance organic transistors based on molecular orientation and interface controlFor improvement of the characteristics of organic transistors, we worked on the control of the gate insulator surface and the control of the organic semiconductor-metal interface. Regarding the control of the insulating film surface, the organic monolayer was appropriately surface-treated to enable the film formation process by the coating process, and the spin coating method achieved mobilities exceeding 4 cm2 / Vs. Regarding the control of the organic semiconductor-metal interface, we clarified the relationship between the organic monolayer and the work function, and found the organic monolayer appropriate for improvement of the characteristics in organic transistors. Regarding the control of the gate insulator surface, we reproduced the threshold voltage control by the surface treatment, and successfully estimated the density of the energy level generated by the treatment.
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Challenging Research (Pioneering), Challenging Research (Pioneering), Kobe University, Jun. 2017 - Mar. 2020Piezoelectric power generation with organic flexible ferroelectic polymers for implantable devicesFlexible piezoelectric devices with poly (vinylidene fluoride-trifluoroethylene) thin films were fabricated, and directly monitoring of the heart state and piezoelectric power generation were investigated using the pulsating 3D heart model. By attaching the flexible piezoelectric devices to the 3D heart model, the piezoelectric responses corresponding to the pulsation of the right and left ventricles were observed and reflected the status of heart. The maximum output voltage was obtained in the front of the right ventricle of the heart model. The output energy, which caused from piezoelectric effect, improved linearly with the increase of the device area, and was estimated to be approximately 8 nJ/mm2 per heartbeat.
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), Kobe University, Apr. 2012 - Mar. 2015, Principal investigatorThe basic technology development for realization of high-frequency operating organic-transistor circuits leaded to the following achievement. Surface treatment for contact electrodes and optimization of fabrication process realized a high mobility of 3.3 cm2/Vs in organic transistors with bottom contact configuration that is easily applied to short channel transistors. Also, threshold voltage control in the range of a few V was demonstrated by oxygen plasma treatment. Furthermore, the work function and the thermal stability of surface-modified electrodes for low contact resistance were investigated. As a result, work functions in the range of 4.3 to 5.5 eV were obtained.Competitive research funding
- 有機半導体に関する研究Competitive research funding
- Study on Organic SemiconductorCompetitive research funding
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