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Researcher basic information
■ Research news- 21 Apr. 2017, Solar cell design with over 50% energy-conversion efficiency
- 15 May 2015, The world's first mercury-free film-type ultraviolet light source
- 太陽電池
- 量子ドット
- Photonic Device
- Ultrafast Spectroscopy
- Optical Properties in Solids
- Engineering of Novel Materials
- Nanotechnology/Materials / Crystal engineering
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering
- Apr. 2022 - Present, 日本材料学会, 半導体エレクトロニクス部門委員会委員長
- Apr. 2006 - Present, 光物性研究会, 組織委員
- May 1985 - Present, 応用物理学会, 正会員
- Feb. 2021 - Jan. 2022, レーザー学会年次大会, プログラム委員主査
- Oct. 1986 - Dec. 2021, 日本物理学会, 正会員
- Apr. 2021 - Oct. 2021, 9th International Symposium on Control of Semiconductor Interfaces (ISCSI IX, 2022), 国際プログラム委員
- Oct. 2019 - Oct. 2021, 電子材料シンポジウム(EMS), 実行委員長
- Jun. 2021 - Aug. 2021, SemiconNano 2021 (8th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures), 組織委員長(共同)
- Apr. 2018 - Sep. 2019, 電子材料シンポジウム(EMS), 実行副委員長
- Sep. 2017 - Sep. 2019, 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019), 組織委員長
- Feb. 2018 - May 2019, 2019化合物半導体ウィーク(CSW:ISCS&IPRM), 現地実行委員長
- Sep. 2018 - Apr. 2019, International Conference on Nanophotonics and Nano-optoelectronics, 組織委員会委員
- Jun. 2017 - Mar. 2019, 日本材料学会第66期編集委員会, 査読委員
- Feb. 2018 - Jul. 2018, 9th International Workshop on Bismuth-Containing Semiconductors, プログラム委員
- Apr. 2017 - Mar. 2018, レーザー学会学術講演会第38回年次大会, プログラム委員
- Dec. 2014 - Dec. 2017, 光物性研究会, 組織委員長
- Jun. 2017 - Oct. 2017, 国際シンポジウム (電気通信大学100周年記念)「“Future Earth”エネルギー課題に資する新奇なナノ物質・触媒・表面」, 組織委員
- Apr. 2016 - Aug. 2017, International Conference on Defects in Semiconductors(ICDS2017), International Program Committeeメンバー
- Aug. 2016 - Apr. 2017, International Conference on Nanophotonics and Nano-optoelectronics, 組織委員
- Apr. 2015 - Sep. 2016, 半導体レーザ国際会議(ISLC), 現地実行委員
- Mar. 2015 - Jun. 2016, 2016化合物半導体ウィーク(CSW:ISCS&IPRM), 展示委員長
- Sep. 2015 - Mar. 2016, 第17回ナノ構造における光と物質の相互作用に関する国際会議(PLMCN), 実行委員長
- Jan. 2015 - Sep. 2015, 2015年国際固体素子・材料コンファレンス, 論文副委員長
- Jul. 2013 - Jul. 2015, 電子材料シンポジウム(EMS), 論文委員長
- Apr. 2013 - Mar. 2015, 社団法人応用物理学会, 諮問委員
- Apr. 2002 - Jun. 2013, 電子材料シンポジウム, プログラム委員
- Oct. 2012 - May 2013, 2013年化合物半導体週間(化合物半導体国際シンポジウム・インジウムリン系材料国際会議合同国際会議), 現地実行委員長
- Apr. 2011 - Mar. 2013, 社団法人応用物理学会, 理事
- Jul. 2009 - Sep. 2012, 第17回分子線エピタキシー国際会議, 現地実行委員長
- Apr. 2011 - Mar. 2012, Journal of Spectroscopy and Dynamics, Editorial Board
- Mar. 2009 - Aug. 2011, 第24回アモルファス及びナノ結晶半導体国際会議, 実行委員
- Mar. 2009 - Jun. 2010, 第37回化合物半導体国際会議, 論文委員(サブコミッティチェア)
- Aug. 2008 - Jul. 2009, EP2DS-18(第18回2次元電子系国際会議)/MSS-14(第14回半導体超構造国際会議), 現地実行委員長
- Apr. 2004 - Mar. 2009, Japanese Journal of Applied Physics, 編集委員
- Nov. 2006 - Oct. 2007, 第34回化合物半導体国際会議, 論文委員サブコミッティ幹事
- Jul. 2005 - Jul. 2005, 第14回分子線エピタキシー国際会議, 論文委員
- Apr. 2005 - Apr. 2005, 第18回インジウム燐および関連材料に関する国際会議, 組織委員
- Apr. 2003 - Mar. 2005, 応用物理学会, 関西支部幹事
- Apr. 2003 - Mar. 2005, 応用物理学会関西支部セミナー「光物性とその応用」, 世話人
- Mar. 1998 - Mar. 2002, 応用物理学会, 講演分科会世話人
- Sep. 1999 - May 2001, 第13回インジウム燐および関連材料に関する国際会議, 組織委員
- Apr. 1995 - Mar. 2000, 日本光学会, 文献抄録委員
- May 1993 - Mar. 1998, Spring-8利用者懇談会, 正会員
- Jul. 1993 - Dec. 1996, 日本真空協会, 個人会員
- Jul. 1992 - Dec. 1996, 日本金属学会, 正会員
- Apr. 1992 - Mar. 1994, 日本真空協会, 関西支部幹事
- Mar. 1992 - Aug. 1993, 第5回半導体不純物の物理と制御に関する国際会議, 組織委員
Research activity information
■ Award- Sep. 2022 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-XI), ISCSI-XI Young Researcher Award, Photoluminescence Characteristics of InAs Quantum Dots in the Doubled-heterointerface of AlGaAs/GaAs-based Two-step Photon Up-conversion Solar Cells
- Jun. 2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC 47), PVSC 47 Best Student Paper Award, Up-converted photocurrent enhancement in modulation-doped two-step photon up-conversion
- Mar. 2020 日本材料学会, 令和元年度日本材料学会論文賞, デュアルヘテロダイン干渉計により光源起因のノイズを低減したサブナノメートル精度ウエハフラットネス計測システム
- Oct. 2019 電子材料シンポジウム, EMS賞, Efficient Laser Cooling in Rare-Earth Doped Oxides at High Temperature
- Sep. 2019 SemiconNano, SemiconNano2019 Best Poster Award, Laser Cooling Utilizing Anti-Stokes Photoluminescence in Yb-Doped Yttrium Aluminum Garnet
- Jul. 2018 日本材料学会半導体エレクトロニクス部門委員会, 日本材料学会半導体エレクトロニクス部門委員会平成30年度第1回研究会 学生優秀講演賞, Yb添加Yttrium-Aluminum化合物による固体レーザー冷却
- Jul. 2017 日本材料学会半導体エレクトロニクス部門委員会, 日本材料学会半導体エレクトロニクス部門委員会 平成29年度第1回研究会 学生優秀講演賞, 低温キャップInAs/GaAs量子ドット超格子中間バンド型太陽電池における2段階光吸収の増強
- Sep. 2015 応用物理学会, 応用物理学会フェロー表彰 第9回(2015年度), 半導体ナノ電子材料の構造制御と電子状態・光物性に関する研究
- Dec. 2014 第25回光物性研究会, 光物性研究会奨励賞, InAs/GaAs量子ドット超格子太陽電池における高効率2段階光吸収過程
- Nov. 2014 日本材料学会半導体エレクトロニクス部門委員会, 日本材料学会半導体エレクトロニクス部門委員会 平成24年度第3回研究会 学生優秀講演賞, 低次元量子構造を利用したホットキャリア型太陽電池の提案
- Sep. 2014 応用物理学会, APEX/JJAP編集貢献賞, 2014年度(第13回)
- Jul. 2014 平成26年度第2回半導体エレクトロニクス部門委員会第1回研究会, 日本材料学会半導体エレクトロニクス部門委員会平成26年度第1回研究会学生優秀講演賞, Dot-in-Well構造を用いた量子ドット太陽電池の室温二段階光吸収
- Jun. 2014 40th IEEE Photovoltaic Special Conference, PVSC40 Best Student Paper Award, Carrier Time-of-Flight Measurement Using a Probe Structure for DirectEvaluation of Carrier Transport in Quantum Structure Solar Cells
- Mar. 2014 第36回(2014年春季)応用物理学会, 応用物理学会講演奨励賞, プローブ構造を用いた量子構造太陽電池におけるキャリア走行時間の測定” トープラサートポン カシディット
- Dec. 2011 The 18th International Display Workshops, IDW'11 Outstanding Poster Paper Award, Effects of Argon Plasma Irradiation on Amorphous In-Ga-Zu-Ofilm Evaluated by Microwave Photoconductivity Decay Method
- Dec. 2010 第21回光物性研究会, 第21回光物性研究会奨励賞, 希土類化合物半導体GdNにおけるバンド端光吸収の磁気光学特性
- Oct. 2010 6th International Workshop on Nano-Scale Spectroscopy \Nanotechnology, NSS6 Student Award, Band-Edge Structure Induced by Ferromagnetic Spin Ordering in GdN Thin Films
- Dec. 2009 日本材料学会半導体エレクトロニクス部門委員会, 日本材料学会半導体エレクトロニクス部門学生優秀講演賞, 希土類窒化物半導体GdNヘテロ構造の基礎物性
- Mar. 2009 財団法人エレクトロニクス実装学会, 第22回エレクトロニクス実装学会学術講演会優秀講演賞, 周期加熱サーモリフレクタンス法による銅めっき膜の熱伝導率評価
- Dec. 2008 8th International Conference on Nano-Molecular Electronics 2008, ICNME2008 Outstanding Poster Presentation Award, Side Electron Emission Device Using A Composite of Carbon Nanofibers and Aluminum
- Jul. 2008 ICOOPMA組織委員会, Best Poster Award, Lengthening of photoluminescence decay time owing to expansion of electron envelope functions in stacked quantum dots
- Apr. 2008 電気関係学会関西支部連合大会実行委員会, 平成19年電気関係学会関西支部連合大会奨励賞, コラムナ量子ドットによる広帯域発光特性制御
- Sep. 2007 応用物理学会, 応用物理学会講演奨励賞, InAs/GaAs量子ドット自己形成過程のRHEEDシェブロン構造のその場解析とIn拡散効果
- Mar. 2007 日本金属学会, 金属学会写真奨励賞, 単一量子ドットの三次元微細構造解析
- Nov. 2006 第67回応用物理学会学術講演会, 応用物理学会講演奨励賞, 高分解能断面TEMによる埋め込み量子ドット形状のマルチアングル直接観測
- May 2005 神戸大学, 神戸大学工学部優秀教育賞
- Nov. 2004 はりま産学交流会主催, シーズコンペ入賞, 超省電力次世代ディスプレイ材料の開発
- Sep. 2000 第46回応用物理学関係連合講演会, 応用物理学会講演奨励賞, Ga0.5In0.5P/GaAsヘテロ界面における自然超格子の影響 - 偏光ラマンスペクトル -
- Sep. 1999 第60回応用物理学会学術講演会, 応用物理学会講演奨励賞, 反射率差分光法によるInAs自己形成量子ドット成長表面の観察
- Jul. 1998 電子材料シンポジウム運営委員会, EMS賞, Time-Resolved Up-Converted Photoluminescence at Semicoductor Heterointerface
- Jul. 1995 The Material Research Society of Japan, 日本MRS若手研究者アワード, AlGaInP混晶半導体自然超格子の電子状態制御
- The basic photoconductive properties of an InAs/GaAs quantum dot (QD) superlattice have been characterized to develop photoconductive antennas (PCAs) operating with a telecom wavelength excitation for practical terahertz (THz) systems. The multiple-stacked InAs/GaAs QD structure was grown by molecular beam epitaxy and photo-Hall effect measurements were performed under infrared illumination conditions using light-emitting diodes with different emission wavelengths. The results have shown that sign reversal occurs in the Hall coefficient (RH) as the illumination wavelength changes: RH is negative at 940 nm and positive at 1550 nm. The photocurrent at 940 nm illumination is ascribed to the electron hole pair generation in QDs, whereas the photocurrent at 1550 nm is dominated by the hole current generated through the midgap states in the structure. The hole dominant photocurrent has been interpreted by a model in which photogenerated electrons are trapped in QDs and the number of mobile electrons are reduced. High dark resistance of the present QD superlattice material provides an advantage for the application to PCA devices. THz wave generation has been demonstrated by the ultrafast 1550 nm pulse excitation of a PCA device fabricated from the QD superlattice.AIP Publishing, Jun. 2025, Journal of Applied Physics, 137(21) (21)Scientific journal
- Abstract The application of the thermoradiative effect of photodiodes, in which photons are emitted to a cold reservoir in the far-field, is a promising approach for renewable electricity generation. Here we derive the radiative limit of the output power density of an ideal thermoradiative diode (TRD) with an intermediate band (IB) using detailed balance calculations. The output power density of an ideal IB-TRD with a given bandgap energy and an optimal IB position increases with the device temperature, and simultaneously the optimal position of the IB shifts away from the mid-gap position due to the current matching constraint. Since the intrinsic carrier density needs to be significantly lower than the doping concentration to form a p–n junction at the operating temperature, IB-TRDs can be advantageous compared to single-junction TRDs consisting of narrow-bandgap semiconductors.Springer Science and Business Media LLC, Mar. 2025, Scientific Reports, 15(1) (1)Scientific journal
- Abstract While a significant part of the solar energy lies in the infrared range, common semiconductors cannot absorb this part of the solar irradiance by direct band-to-band transitions, because the corresponding photon energies are below the bandgap energy. Two-step photon up-conversion (TPU) is one of the processes that allows us to harvest energy in the region below the bandgap, and one possible approach to realize a TPU-based solar cell is to use an AlGaAs/GaAs heterointerface with quantum dots in order to induce additional intraband transitions. On the other hand, here we report on the TPU phenomenon at a methylammonium lead bromide/gallium arsenide (MAPbBr3/GaAs) heterointerface without quantum dots. For this heterojunction, we observed high-energy photoemission by low-energy photoinjection, demonstrating the TPU. By using photoluminescence (PL) and time-resolved PL measurement techniques, we elucidate the mechanism of the PL emission from MAPbBr3 observed from MAPbBr3/GaAs samples. Through the comparisons of the experimental PL and TRPL results between the MAPbBr3/GaAs and MAPbBr3/Glass-substrate samples, we successfully distinguish the TPU phenomenon from the ordinal two-photon absorption of MAPbBr3. Our findings in the TPU at the MAPbBr3/GaAs heterointerface may help to realize quantum-dot-free photon up-conversion solar cells.Springer Science and Business Media LLC, Jan. 2025, Journal of Optics, English[Refereed]Scientific journal
- Abstract We studied the photovoltaic properties of a conventional silicon photodiode under monochromatic illumination conditions to clarify the loss mechanisms that are important for application as a laser power converter. While the short-circuit current increases linearly with the excitation power, the power dependence of the open-circuit voltage consists of two regions with different slopes as a result of the Joule heating. At higher excitation power densities, thermal effects play a key role in the current–voltage characteristics, and therefore the maximum conversion efficiency is achieved at a certain excitation-power density. Furthermore, the optimum excitation wavelength shifts towards longer wavelengths as the excitation power density increases, because the optimum value is determined by a trade-off between the optical absorption strength and the excitation power density.IOP Publishing, Jan. 2025, Japanese Journal of Applied Physics, 64(1) (1), 014001 - 014001, English[Refereed]Scientific journal
- American Chemical Society (ACS), Dec. 2024, ACS Photonics, 12(1) (1), 447 - 456Scientific journal
- Abstract Two-step photon upconversion solar cells (TPU-SCs) based on III–V semiconductors can achieve enhanced sub-bandgap photon absorption because of intraband transitions at the heterointerface. From a technological aspect, the question arose whether similar intraband transitions can be realized by using perovskite/III–V semiconductor heterointerfaces. In this article, we demonstrate a TPU-SC based on a CsPbBr3/GaAs heterointerface. Such a solar cell can ideally achieve an energy conversion efficiency of 48.5% under 1-sun illumination. This is 2.1% higher than the theoretical efficiency of an Al0.3Ga0.7As/GaAs-based TPU-SC. Experimental results of the CsPbBr3/GaAs-based TPU-SC show that both the short-circuit current JSC and the open-circuit voltage VOC increase with additional illumination of sub-bandgap photons. We analyze the excitation power dependence of JSC for different excitation conditions to discuss the mechanisms behind the enhancement. In addition, the observed voltage-boost clarifies that the JSC enhancement is caused by an adiabatic optical process at the CsPbBr3/GaAs heterointerface, where sub-bandgap photons efficiently pump the electrons accumulated at the heterointerface to the conduction band of CsPbBr3. Besides the exceptional optoelectronic properties of CsPbBr3 and GaAs, the availability of a CsPbBr3/GaAs heterointerface for two-step photon upconversion paves the way for the development of high-efficiency perovskite/III–V semiconductor-based single-junction solar cells.Springer Science and Business Media LLC, Nov. 2024, Scientific Reports, 14(1) (1)[Refereed]Scientific journal
- Abstract We report lateral photoconductive properties of multilayer-stacked undoped InAs/GaAs quantum dots (QDs) for the application of photoconductive terahertz (THz) antenna devices that operate in a 1.5 μm-telecom-wavelength band. The excitation power-dependent photocurrent showed a high value without saturation under high excitation power for the excitation wavelength of 1460 nm. From the reflection pump-probe signal, a fast photocarrier lifetime was derived. These results, together with the low dark current characteristic, support the applicability of the multilayer-stacked undoped InAs/GaAs QDs to photoconductive THz antennas operating in a 1.5 μm-wavelength band.IOP Publishing, Aug. 2024, Japanese Journal of Applied Physics, 63(8) (8), 082002 - 082002Scientific journal
- Society of Materials Science, Japan, Feb. 2024, Journal of the Society of Materials Science, Japan, 73(2) (2), 178 - 182, Japanese[Refereed]Scientific journal
- 公益社団法人応用物理学会, Sep. 2023, 応用物理, 92(9) (9), 550 - 554, Japanese[Refereed]
- Abstract Ultrafast responses caused by ultrashort pulse excitation can be applied to ultrafast optical switches with high-speed information processing. In this paper, via the impulsive interference of excitons, we achieve an ultrafast optical response suited for ultrafast switches in all-optical networks. Due to the simultaneous excitation of two exciton states in the multiple quantum well on a strained buffer layer without the occurrence of adverse effects like stacking faults, impulsive interference is induced. The small compressive strain from the buffer layer modifies the orientation of the excitons inside the quantum well, and causes the ultrafast response.IOP Publishing, Jun. 2023, Applied Physics Express, 16(6) (6), 062009 - 062009, EnglishScientific journal
- Photon upconversion (PU) is a process where an electron is excited from the valence band to the conduction band of a wide-gap semiconductor by the sequential absorption of two or more photons via real states. For example, two-step PU can generate additional photocurrent in the so-called intermediate-band solar cells. In this work, we consider two- and three-step processes; we study multi-step PU in a quantum dot (QD)-based single-junction solar cell with a double-heterointerface structure. The solar cell consists of three different absorber layers: Al0.7Ga0.3As, Al0.3Ga0.7As, and GaAs, which form two heterointerfaces. Just beneath each heterointerface, an InAs/GaAs QD layer was inserted. After band-to-band excitation, electrons accumulate at each heterointerface, and then, below-bandgap photons excite a certain fraction of these electrons above the barrier energy. The photoluminescence spectra of the InAs QDs reveal slightly different QD size distributions at the two heterointerfaces. We show that the external quantum efficiency is improved by additional irradiation with below-bandgap infrared photons, which suggests a multi-step PU process that involves the two heterointerfaces. The dependence of the photocurrent on the infrared excitation power density only shows a superlinear behavior when the GaAs layer is excited but the Al0.3Ga0.7As layer is not. These data demonstrate a multi-step PU process that consists of one intraband transition at each of the two heterointerfaces and one interband transition in GaAs.AIP Publishing, Mar. 2023, Journal of Applied Physics, 133(12) (12), 124503 - 124503, English[Refereed]Scientific journal
- Abstract We elucidate a photocarrier collection mechanism in intermediate band solar cells (IBSCs) with InAs-quantum dots (QDs)-in-an-Al0.3Ga0.7As/GaAs-quantum well structures. When the Al0.3Ga0.7As barrier is excited, the device electrical output can be varied by additional infrared light for the electron intraband optical transition in QDs. The photocurrent in IBSC with a single QDs-in-a-well structure shows a monotonic increase with the intraband-excitation density. Conversely, IBSC with a multilayered QDs-in-a-well structure exhibits a photocurrent reduction when electrons in QDs are optically pumped out. The simultaneously measured photoluminescence spectra proved that the polarity of QD states changes depending on the intraband-excitation density. We discuss the drift and diffusion current components and point out that the hole diffusion current is significantly influenced by carriers inside the confinement structure. Under strong intraband excitations, we consider an increased hole diffusion current occurs by blocking hole-capture in the quantum structures. This causes unexpected photocurrent reduction in the multilayered device.IOP Publishing, Jul. 2022, Japanese Journal of Applied Physics, 61(7) (7), 074002 - 074002[Refereed]Scientific journal
- Optica Publishing Group, Mar. 2022, Optics Express, 30(7) (7), 11789 - 11789, English[Refereed]Scientific journal
- AIP Publishing, Feb. 2022, AIP Advances, 12(2) (2), 025110 - 025110[Refereed]Scientific journal
- Lead, Jan. 2022, Chemistry&Chemical Industry(化学と工業), 75(1) (1), 26 - 28, Japanese紫外光によるウイルスの不活化と実証実験[Invited]Scientific journal
- American Institute of Physics Inc., Nov. 2021, Journal of Applied Physics, 130(17) (17), EnglishScientific journal
- AIP Publishing, Sep. 2021, Journal of Applied Physics, 130(12) (12), 124505 - 124505[Refereed]Scientific journal
- AIP Publishing, Aug. 2021, Journal of Applied Physics, 130(8) (8), 085701 - 085701, English[Refereed]Scientific journal
- IOP Publishing, Aug. 2021, Journal of Physics D: Applied Physics, 54(33) (33), 335106 - 335106[Refereed]Scientific journal
- The Optical Society, Jul. 2021, Optics Express, 29(15) (15), 24387 - 24387[Refereed]Scientific journal
- Institute of Electrical and Electronics Engineers Inc., Jun. 2021, Conference Record of the IEEE Photovoltaic Specialists Conference, 1786 - 1788, EnglishInternational conference proceedings
- May 2021, KOGAKU Japanese Journal of Optics, 50(10) (10), 432 - 437解説:希土類イオンを利用した水銀フリ-ナロ-バンド紫外光源[Refereed]
- SPIE, Apr. 2021, Photonic Heat Engines: Science and Applications III[Refereed]International conference proceedings
- AIP Publishing, Feb. 2021, Journal of Applied Physics, 129(7) (7), 074503 - 074503, English[Refereed]Scientific journal
- Society of Materials Science, Japan, Oct. 2020, Journal of the society of Materials Science,Japan, 69(10) (10), 727 - 732, Japanese[Refereed]Scientific journal
- {AIP} Publishing, Sep. 2020, AIP Advances, 10(9) (9), 095016 - 095016, English[Refereed]Scientific journal
- IOP Publishing, Aug. 2020, Japanese Journal of Applied Physics, 59(8) (8), 082005 - 082005, English[Refereed]Scientific journal
- American Physical Society (APS), Jul. 2020, Physical Review Applied, 14(1) (1), 014010-1 - -7, English[Refereed]Scientific journal
- Jul. 2020, Applied Physics Letters, 117(041104) (041104), 1 - 5, English[Refereed]Scientific journal
- Springer Science and Business Media LLC, Jul. 2020, Scientific Reports, 10(1) (1)[Refereed]Scientific journal
- Institute of Electrical and Electronics Engineers Inc., Jun. 2020, Conference Record of the IEEE Photovoltaic Specialists Conference, 2020-, 0146 - 0148, EnglishInternational conference proceedings
- Institute of Electrical and Electronics Engineers Inc., Jun. 2020, Conference Record of the IEEE Photovoltaic Specialists Conference, 2020-, 0902 - 0904, EnglishInternational conference proceedings
- AIP Publishing, Jun. 2020, Review of Scientific Instruments, 91(6) (6), 065114 - 065114, English[Refereed]Scientific journal
- SPIE, Feb. 2020, Photonic Heat Engines: Science and Applications II, 11298, 112980B-1 - 10, English[Refereed]International conference proceedings
- Feb. 2020, Jpn. J. Appl. Phys., 59, 032002-1 - 5, English[Refereed]Scientific journal
- IOP Publishing, Dec. 2019, Applied Physics Express, 12(12) (12), 125008 - 125008, English[Refereed]Scientific journal
- The Optical Society, Nov. 2019, Optics Express, 27(24) (24), 34961 - 34961, English[Refereed]Scientific journal
- Society of Materials Science, Japan, Oct. 2019, Journal of the Society of Materials Science, Japan, 68(10) (10), 762 - 766[Refereed]Scientific journal
- Oct. 2019, 材料 別冊, 68(10) (10), 762 - 766, JapaneseYb添加イットリウムアルミニウムガーネット結晶粉末におけるアンチストークス発光を利用した理想レーザー冷却効率[Refereed]Scientific journal
- Oct. 2019, 材料 別冊, 68(10) (10), 757 - 761, Japanese金属上に形成した2次元フォトニック結晶の光学応答[Refereed]Scientific journal
- Oct. 2019, 材料 別冊, 68(10) (10), 767 - 771, Japanese加速度計により振動の影響を低減したサブナノメートル精度ウエハフラットネス計測システム[Refereed]Scientific journal
- American Chemical Society (ACS), Aug. 2019, J. Phys. Chem, 123(32) (32), 19447 - 19452[Refereed]Scientific journal
- IOP Publishing, Aug. 2019, Semiconductor Science and Technology, 34(9) (9), 094003 - 1-5, English[Refereed]Scientific journal
- AIP Publishing, Jul. 2019, Journal of Applied Physics, 126, 033103 - 1-6, English[Refereed]Scientific journal
- American Institute of Physics Inc., Jun. 2019, Journal of Applied Physics, 125(23) (23), EnglishScientific journal
- Institute of Electrical and Electronics Engineers Inc., Jun. 2019, Conference Record of the IEEE Photovoltaic Specialists Conference, 2623 - 2626, EnglishInternational conference proceedings
- Institute of Electrical and Electronics Engineers Inc., Jun. 2019, Conference Record of the IEEE Photovoltaic Specialists Conference, 2597 - 2599, EnglishInternational conference proceedings
- Institute of Electrical and Electronics Engineers Inc., Jun. 2019, Conference Record of the IEEE Photovoltaic Specialists Conference, 3004 - 3006, EnglishInternational conference proceedings
- Institute of Physics, May 2019, Journal of Physics: Conference Series, 1220, 012013 - 1-4, English[Refereed]International conference proceedings
- We studied the dynamics of electrons generated by two-step photoexcitation in an intermediate-band solar cell (IBSC) comprising InAs/GaAs/Al0.3Ga0.7As dot-in-well (DWELL) structure using time-resolved photocurrent (TRPC) measurement. The examined IBSC exhibited considerably slower photocurrent decay than a conventional InAs/GaAs quantum dot IBSC, which is due to the extraordinaNature Publishing Group, May 2019, Scientific Reports, 9, 7859 - 1-8, English[Refereed]Scientific journal
- OSA Publishing, Apr. 2019, OSA Continuum, 2, 1621 - 1628, English[Refereed]Scientific journal
- Mar. 2019, Physica E: Low-dimensional Systems and Nanostructures, 111, 179 - 184, English[Refereed]Scientific journal
- Nature Publishing Group, Feb. 2019, Nature Communications, 10, 956 - 1-3, English[Refereed]Scientific journal
- Society of Materials Science Japan, 2019, Zairyo/Journal of the Society of Materials Science, Japan, 68(10) (10), 767 - 771, JapaneseScientific journal
- Springer Verlag, 2019, Green Energy and Technology, 55 - 79, EnglishIn book
- Springer Verlag, 2019, Green Energy and Technology, 81 - 137, EnglishIn book
- Springer Verlag, 2019, Green Energy and Technology, 15 - 24, EnglishIn book
- Springer Verlag, 2019, Green Energy and Technology, 157 - 202, EnglishIn book
- Springer Verlag, 2019, Green Energy and Technology, 139 - 156, EnglishIn book
- Springer Verlag, 2019, Green Energy and Technology, 25 - 42, EnglishIn book
- Springer Verlag, 2019, Green Energy and Technology, 43 - 54, EnglishIn book
- Springer Verlag, 2019, Green Energy and Technology, 1 - 13, EnglishIn book
- Springer Singapore, 2019, Green Energy and Technology[Refereed]
- Nature Publishing Group, Dec. 2018, Scientific Reports, 8(1) (1), pp. 872 - 1-8, English[Refereed]Scientific journal
- Institute of Electrical and Electronics Engineers Inc., Nov. 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, 3447 - 3450, EnglishInternational conference proceedings
- Nov. 2018, Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition, 126 - 128, English[Refereed]International conference proceedings
- Oct. 2018, Physical Review Applied, A 10(044035) (044035), pp. 044035 - 1-6, English[Refereed]Scientific journal
- Society of Materials Science Japan, Sep. 2018, Zairyo/Journal of the Society of Materials Science, Japan, 67(9) (9), 829 - 833, JapaneseScientific journal
- Sep. 2018, 材料 別冊, Vol. 67(No. 9) (No. 9), pp. 829 - 833, Japaneseデュアルヘテロダイン干渉計により光源起因のノイズを低減したサブナノメートル精度ウエハフラットネス計測システム[Refereed]Scientific journal
- Jul. 2018, Applied Physics Express, Vol. 11(No. 1) (No. 1), pp.082303 - 1-4, EnglishHot-Carrier Generation in a Solar Cell Containing InAs/GaAs Quantum-Dot Superlattices as a Light Absorber[Refereed]Scientific journal
- Institute of Physics, Jul. 2018, Journal of Physics D: Applied Physics, 51, 305102 - 1-6, English[Refereed]Scientific journal
- Corresponding, Jun. 2018, 電気評論, (6月号) (6月号), 13 - 17, Japanese高変換効率太陽光発電の研究開発~50%を超える変換効率実現に向けた取り組み[Refereed]
- OSA - The Optical Society, 2018, Optics InfoBase Conference Papers, 2018, English[Refereed]International conference proceedings
- SPIE, 2018, Proceedings of SPIE - The International Society for Optical Engineering, 10527, English[Refereed]International conference proceedings
- Jan. 2018, APPLIED PHYSICS EXPRESS, 11(1) (1), pp. 012301 - 1-4, English[Refereed]Scientific journal
- Oct. 2017, PHYSICAL REVIEW B, 96(15) (15), pp. 155210 - 1-8, English[Refereed]Scientific journal
- Society of Materials Science Japan, Sep. 2017, Zairyo/Journal of the Society of Materials Science, Japan, 66(9) (9), 629 - 633, Japanese[Refereed]Scientific journal
- Sep. 2017, JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 86(9) (9), pp. 094710 - 1-4, English[Refereed]Scientific journal
- Sep. 2017, 材料 別冊, 66(9) (9), pp. 629 - 633, JapaneseInAs/GaAs量子ドット超格子を用いたホットキャリア型太陽電池の基礎特性[Refereed]Scientific journal
- Jul. 2017, SCIENTIFIC REPORTS, 7, pp. 5865 - 1-10, English[Refereed]Scientific journal
- Jun. 2017, PHYSICS LETTERS A, 381(22) (22), 1905 - 1909, English[Refereed]Scientific journal
- May 2017, APPLIED PHYSICS LETTERS, 110(19) (19), pp. 193104 - 1-5, English[Refereed]Scientific journal
- Apr. 2017, NATURE COMMUNICATIONS, 8, pp. 14962 - 1-9, English[Refereed]Scientific journal
- Society of Materials Science Japan, Mar. 2017, Zairyo/Journal of the Society of Materials Science, Japan, 66(3) (3), 244 - 249, Japanese[Refereed]
- Mar. 2017, 材料 別冊, 66(3) (3), pp. 244~249, Japanese半導体材料・デバイスの最新の進展 3. 太陽電池の変換効率限界を引き上げる半導体材料設計[Refereed]Scientific journal
- OSA - The Optical Society, 2017, Optics InfoBase Conference Papers, 2017, English[Refereed]International conference proceedings
- OSA - The Optical Society, 2017, Optics InfoBase Conference Papers, 2017, English[Refereed]International conference proceedings
- Jan. 2017, Scientific Reports, 7, pp. 41496 - 1-7, English[Refereed]Scientific journal
- Institute of Electrical and Electronics Engineers Inc., Dec. 2016, Conference Digest - IEEE International Semiconductor Laser Conference, EnglishTransverse-magnetic laser oscillation from highly stacked InAs/GaAs quantum dotsInternational conference proceedings
- Nov. 2016, PHYSICAL REVIEW B, 94(19) (19), pp. 195313 - 1 -9, English[Refereed]Scientific journal
- Oct. 2016, JOURNAL OF APPLIED PHYSICS, 120(13) (13), pp. 134313 - 1-6, English[Refereed]Scientific journal
- Society of Materials Science Japan, Sep. 2016, Zairyo/Journal of the Society of Materials Science, Japan, 65(9) (9), 647 - 651, Japanese[Refereed]Scientific journal
- Sep. 2016, Zairyo/Journal of the Society of Materials Science, Japan, 65(9) (9), 642 - 646[Refereed]Scientific journal
- 日本材料学会, Sep. 2016, 日本材料学会会誌「材料」, 65(9) (9), pp. 647 - 651, Japanese量子ドット超格子太陽電池における2段階光励起電流生成ダイナミクスの電界依存特性[Refereed]Scientific journal
- 日本材料学会, Sep. 2016, 日本材料学会会誌「材料」, 65(9) (9), pp. 642 - 646, Japaneseペロブスカイト太陽電池へのITO透明電極スパッタリング直接堆積の影響[Refereed]Scientific journal
- Jul. 2016, AIP ADVANCES, 6(7) (7), pp. 075209 - 1-7, English[Refereed]Scientific journal
- May 2016, Applied Physics Express, 9(6) (6), 062801 - 1-3, EnglishEffects of exciton line widths on the amplitude of quantum beat oscillations[Refereed]Scientific journal
- May 2016, JOURNAL OF APPLIED PHYSICS, 119(19) (19), pp. 194306 - 1-8, English[Refereed]Scientific journal
- Mar. 2016, IEEE JOURNAL OF PHOTOVOLTAICS, 6(2) (2), 465 - 472, English[Refereed]Scientific journal
- Mar. 2016, PHYSICAL REVIEW B, 93(11) (11), pp. 115303 - 1-5, English[Refereed]Scientific journal
- Mar. 2016, APPLIED PHYSICS LETTERS, 108(11) (11), pp. 111905 - 1-4, English[Refereed]Scientific journal
- The Physical Society of Japan (JPS), 2016, Meeting Abstracts of the Physical Society of Japan, 71, 1502 - 1502, Japanese[Refereed]
- The Physical Society of Japan (JPS), 2016, Meeting Abstracts of the Physical Society of Japan, 71, 1351 - 1351, Japanese[Refereed]
- The Physical Society of Japan (JPS), 2016, Meeting Abstracts of the Physical Society of Japan, 71, 1458 - 1458, Japanese[Refereed]
- 2016, 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), EnglishPolarization anisotropy of electroluminescence and net-modal gain in highly stacked InAs/GaAs quantum-dot laser devices[Refereed]International conference proceedings
- 2016, 2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), EnglishTransverse-magnetic laser oscillation from highly stacked InAs/GaAs quantum dots[Refereed]International conference proceedings
- 2016, 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), EnglishTwo-Dimensional Energy Dispersion in Thermally Annealed Epitaxial Nitrogen Atomic Sheet in GaAs[Refereed]International conference proceedings
- 2016, 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), EnglishGaAs first-spacer-layer thickness dependence of polarized photoluminescence properties of closely-stacked InAs/GaAs quantum dots with long-wavelength emission[Refereed]International conference proceedings
- 2016, Proceedings of SPIE - The International Society for Optical Engineering, 9743(974315) (974315), English[Refereed]International conference proceedings
- Institute of Electrical and Electronics Engineers ({IEEE}), Nov. 2015, IEEE Journal of Photovoltaics, 5(6) (6), 1613 - 1620, English[Refereed]Scientific journal
- Oct. 2015, JOURNAL OF APPLIED PHYSICS, 118(15) (15), pp. 154301 - 1-6, English[Refereed]Scientific journal
- Society of Materials Science Japan, Sep. 2015, Zairyo/Journal of the Society of Materials Science, Japan, 64(9) (9), 690 - 695, Japanese[Refereed]Scientific journal
- Society of Materials Science Japan, Sep. 2015, Zairyo/Journal of the Society of Materials Science, Japan, 64(9) (9), 685 - 689, Japanese[Refereed]Scientific journal
- Sep. 2015, Journal of the Society of Materials Science, 64(9) (9), pp. 685 - 689, Japanese近接積層InAs/GaAs量子ドット半導体光アンプの光導波モード解析[Refereed]Scientific journal
- Sep. 2015, Journal of the Society of Materials Science, 64(9) (9), pp. 690~695, JapaneseInAs/GaAs/Al0.3Ga0.7As中間バンド型太陽電池における室温2段階光励起の飽和現象の解析[Refereed]Scientific journal
- Society of Materials Science Japan, Sep. 2015, Zairyo/Journal of the Society of Materials Science, Japan, 64(9) (9), 690 - 695, Japanese[Refereed]Scientific journal
- {AIP} Publishing, Jul. 2015, Applied Physics Letters, 107(4) (4), 043901 - 043901, English[Refereed]Scientific journal
- In this study, we propose a carrier time-of-flight technique to evaluate the carrier transport time across a quantum structure in an active region of solar cells. By observing the time-resolved photoluminescence signal with a quantum-well probe inserted under the quantum structure at forward bias, the carrier transport time can be efficiently determined at room temperature. The{AIP} Publishing, Jul. 2015, Applied Physics Letters, 107(4) (4), 043901 - 043901, English[Refereed]Scientific journal
- Jul. 2015, MATERIALS RESEARCH EXPRESS, 2(7) (7), pp. 076402 - 1-7, English[Refereed]Scientific journal
- Jun. 2015, APPLIED PHYSICS REVIEWS, 2(2) (2), pp. 021302 - 1-48, English[Refereed]Scientific journal
- May 2015, PHYSICAL REVIEW B, 91(20) (20), pp. 201303 - 1-6, English[Refereed]Scientific journal
- Apr. 2015, JOURNAL OF APPLIED PHYSICS, 117(16) (16), pp. 193105 - 1-5, English[Refereed]Scientific journal
- Mar. 2015, PHYSICAL REVIEW B, 91(12) (12), pp. 125307 - 1-4, English[Refereed]Scientific journal
- The Physical Society of Japan (JPS), 2015, Meeting Abstracts of the Physical Society of Japan, 70, 1271 - 1271, Japanese[Refereed]
- The Physical Society of Japan (JPS), 2015, Meeting Abstracts of the Physical Society of Japan, 70, 1115 - 1115, Japanese[Refereed]
- The Physical Society of Japan (JPS), 2015, Meeting Abstracts of the Physical Society of Japan, 70, 1158 - 1158, Japanese[Refereed]
- The Physical Society of Japan (JPS), 2015, Meeting Abstracts of the Physical Society of Japan, 70, 1413 - 1413, Japanese[Refereed]
- 2015, 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), EnglishUltrafast Photocarrier Transport Dynamics in InAs/GaAs Quantum Dot Superlattice Solar Cell[Refereed]International conference proceedings
- 2015, 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), EnglishSaturable Two-step Photo current Generation in Intermediate-band Solar Cells Including InAs Quantum Dots Embedded in Al0.3Ga0.7As/GaAs Quantum Wells[Refereed]International conference proceedings
- 2015, 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), EnglishComparison of Electron and Hole Mobilities in Multiple Quantum Well Solar Cells Using a Time-of-Flight Technique[Refereed]International conference proceedings
- 2015, 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), EnglishTime-Resolved Photoluminescence of MBE-Grown 1 eV GaAsSbN for Multi-Junction Solar Cells[Refereed]International conference proceedings
- 2015, 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), English[Refereed]International conference proceedings
- Jan. 2015, JOURNAL OF APPLIED PHYSICS, 117(4) (4), 043909 - 1~6, English[Refereed]Scientific journal
- 2015, PHYSICS SIMULATION AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES IV, 9358, English[Refereed]International conference proceedings
- Institute of Electrical and Electronics Engineers ({IEEE}), Nov. 2014, IEEE Journal of Photovoltaics, 4(6) (6), 1518 - 1525, English[Refereed]Scientific journal
- Nov. 2014, 14th International Symposium on Advanced Fluid Information, 148 - 149, EnglishPhotoluminescence Properties of InAs Quantum Dots on Nitrogen δ-Doped GaAsInternational conference proceedings
- Nov. 2014, APPLIED PHYSICS LETTERS, 105(18) (18), pp. 1 - 3, English[Refereed]Scientific journal
- Oct. 2014, APPLIED PHYSICS LETTERS, 105(17) (17), pp. 1 - 5, English[Refereed]Scientific journal
- Aug. 2014, JOURNAL OF APPLIED PHYSICS, 116(6) (6), pp. 063510 - 1-5, English[Refereed]Scientific journal
- Jun. 2014, JOURNAL OF APPLIED PHYSICS, 115(23) (23), 233512 - 1-5, English[Refereed]Scientific journal
- May 2014, JOURNAL OF APPLIED PHYSICS, 115(17) (17), 173508 - 1-6, English[Refereed]Scientific journal
- May 2014, JOURNAL OF APPLIED PHYSICS, 115(20) (20), 203717 - 1-5, English[Refereed]Scientific journal
- 応用物理学会, May 2014, 応用物理, 83(5) (5), 348 - 355, Japanese中間バンド型高効率太陽電池―量子ナノ構造中における光キャリアダイナミックス―[Refereed]
- Mar. 2014, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 47(10) (10), 105101 - 1~5, English[Refereed]Scientific journal
- Feb. 2014, JOURNAL OF APPLIED PHYSICS, 115(8) (8), 083510 - 1-5, English[Refereed]Scientific journal
- Feb. 2014, JOURNAL OF APPLIED PHYSICS, 115(8) (8), 083503 - 1~4, English[Refereed]Scientific journal
- Jan. 2014, APPLIED PHYSICS LETTERS, 104(4) (4), 041907 - 1~4, English[Refereed]Scientific journal
- Nov. 2013, 13th International Symposium on Advanced Fluid Information, 102 - 103, EnglishFabrication of InAs Qantum Dots on Nitrided GaAs (001) Surface[Refereed]International conference proceedings
- Sep. 2013, スマートプロセス学会誌(別刷), Vol.2(No.5) (No.5), 206 - 212, Japanese自己形成過程を原子レベルで制御した量子ドットの作製と高機能光応答の実現[Refereed]Scientific journal
- Jul. 2013, JOURNAL OF APPLIED PHYSICS, 114(3) (3), 033517 - 1-5, English[Refereed]Scientific journal
- Jun. 2013, Journal of Applied Physics, 113(22) (22), 223511 - 1-5, English[Refereed]Scientific journal
- Jun. 2013, PHYSICAL REVIEW B, 87(23) (23), 2353323 - 1-6, English[Refereed]Scientific journal
- Jun. 2013, APPLIED PHYSICS LETTERS, 102(22) (22), 222408 1 - 4, English[Refereed]Scientific journal
- Mar. 2013, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(3) (3), 03BA01 - 5, English[Refereed]Scientific journal
- 2013, PHYSICS OF SEMICONDUCTORS, 1566, 325 - +, English[Refereed]International conference proceedings
- 2013, 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2, EnglishCarrier Dynamics in Intermediate States of InAs/GaAs Quantum Dots Embedded in Photonic Cavity Structure[Refereed]International conference proceedings
- 2013, 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2, EnglishCarrier Dynamics in Intermediate States of InAs/GaAs Quantum Dots Embedded in Photonic Cavity Structure[Refereed]International conference proceedings
- Jan. 2013, JOURNAL OF APPLIED PHYSICS, 113(1) (1), 074305 - 1-4, English[Refereed]Scientific journal
- 2013, European Physical Journal B, 86(2) (2), 52 - 1-4, English[Refereed]Scientific journal
- 2013, 15TH INTERNATIONAL CONFERENCE ON THIN FILMS (ICTF-15), 417, 012053 - 1-4, English[Refereed]International conference proceedings
- 2013, Proceedings of SPIE - The International Society for Optical Engineering, 8620, 862008 - 1-7, English[Refereed]International conference proceedings
- Institute of Physics Publishing, 2013, Journal of Physics: Conference Series, 417(1) (1), 012049 - 1-6, English[Refereed]International conference proceedings
- 2013, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11, 10(11) (11), 1492 - 1495, English[Refereed]International conference proceedings
- 応用物理学会, Dec. 2012, Jpn J Appl Phys, 52, 012001 - 1-4, English[Refereed]Scientific journal
- Nov. 2012, IEICE TRANSACTIONS ON ELECTRONICS, E95C(11) (11), 1724 - 1729, English[Refereed]Scientific journal
- Sep. 2012, JOURNAL OF APPLIED PHYSICS, 112(5) (5), English[Refereed]Scientific journal
- Aug. 2012, APPLIED PHYSICS LETTERS, 101(7) (7), 072403 - 1-5, English[Refereed]Scientific journal
- Jul. 2012, PHYSICAL REVIEW B, 86(3) (3), 035301 - 1-7, English[Refereed]Scientific journal
- Jun. 2012, APPLIED PHYSICS LETTERS, 100(23) (23), 232410 - 1-4, English[Refereed]Scientific journal
- Apr. 2012, JOURNAL OF APPLIED PHYSICS, 111(8) (8), 083526 - 1-4, English[Refereed]Scientific journal
- Apr. 2012, JOURNAL OF APPLIED PHYSICS, 111(7) (7), 074305 - 1-4, English[Refereed]Scientific journal
- 2012, 2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS, 147 - 150, EnglishPhysical properties of amorphous In-Ga-Zn-O films deposited under various sputtering pressure[Refereed]International conference proceedings
- Springer New York, Jan. 2012, Quantum Dot Devices, 197 - 222, English[Refereed]In book
- 2012, Materials Research Society Symposium Proceedings, 1342, 87 - 92, English[Refereed]International conference proceedings
- Jan. 2012, JOURNAL OF APPLIED PHYSICS, 111(2) (2), English[Refereed]Scientific journal
- 2012, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2, 9(2) (2), English[Refereed]International conference proceedings
- 2012, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12, 9(12) (12), 2473 - 2476, English[Refereed]International conference proceedings
- Nov. 2011, Zairyo/Journal of the Society of Materials Science, Japan, 60(11) (11), 1004 - 1008, Japanese[Refereed]Scientific journal
- Nov. 2011, JOURNAL OF APPLIED PHYSICS, 110(10) (10), English[Refereed]Scientific journal
- Nov. 2011, Progress in Photovoltaics:Research and Applications, Vol. 19, Issue8, pp. 1~9, EnglishIntermediate Band Photovoltaics Based on Interband-intraband Transitions Using In0.53Ga0.47As/InP Superlattice[Refereed]Scientific journal
- Nov. 2011, JOURNAL OF APPLIED PHYSICS, 110(9) (9), English[Refereed]Scientific journal
- Nov. 2011, JOURNAL OF APPLIED PHYSICS, 110(9) (9), English[Refereed]Scientific journal
- Oct. 2011, JOURNAL OF APPLIED PHYSICS, 110(8) (8), English[Refereed]Scientific journal
- Oct. 2011, JOURNAL OF APPLIED PHYSICS, 110(8) (8), English[Refereed]Scientific journal
- Sep. 2011, PHYSICAL REVIEW B, 84(11) (11), English[Refereed]Scientific journal
- Aug. 2011, JOURNAL OF APPLIED PHYSICS, 110(4) (4), English[Refereed]Scientific journal
- Jun. 2011, APPLIED PHYSICS LETTERS, 98(23) (23), English[Refereed]Scientific journal
- Jun. 2011, APPLIED PHYSICS EXPRESS, 4(6) (6), English[Refereed]Scientific journal
- Apr. 2011, PHYSICAL REVIEW B, 83(15) (15), English[Refereed]Scientific journal
- Apr. 2011, JOURNAL OF APPLIED PHYSICS, 109(7) (7), English[Refereed]Scientific journal
- Mar. 2011, JOURNAL OF CERAMIC PROCESSING RESEARCH, 12, S73 - S77, EnglishNarrowband ultraviolet light emission from AlGdN polycrystalline thin films[Refereed]Scientific journal
- Feb. 2011, Journal of the Physical Society of Japan, Vol 80. No. 3, pp. 034704-1-5, EnglishDephasing of excitonic polaritons confined in GaAs thin films[Refereed]Scientific journal
- Feb. 2011, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 248(2) (2), 464 - 467, English[Refereed]Scientific journal
- 2011, IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 103 - 106, EnglishEffects of argon plasma irradiation on amorphous In-Ga-Zn-O film evaluated by microwave photoconductivity decay method[Refereed]International conference proceedings
- 2011, Conference Record of the IEEE Photovoltaic Specialists Conference, 002625 - 002628, English[Refereed]International conference proceedings
- 2011, 材料, vol.60,No11,pp.1004-1008, Japanese希土類窒化物半導体GdN薄膜の強磁性相転移とスピン秩序誘起のバンドギャップ減少[Refereed]Scientific journal
- Jan. 2011, JOURNAL OF APPLIED PHYSICS, 109(2) (2), English[Refereed]Scientific journal
- 2011, PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 1399, English[Refereed]International conference proceedings
- 2011, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 8(2) (2), English[Refereed]International conference proceedings
- 2011, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 8(2) (2), English[Refereed]International conference proceedings
- 2011, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 1, 8(1) (1), English[Refereed]International conference proceedings
- 2011, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 1, 8(1) (1), English[Refereed]International conference proceedings
- 2011, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 8(2) (2), English[Refereed]International conference proceedings
- 2011, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 8(2) (2), English[Refereed]International conference proceedings
- 2011, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 8(2) (2), English[Refereed]International conference proceedings
- 2011, PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 1399, English[Refereed]International conference proceedings
- Nov. 2010, JOURNAL OF THE JAPAN INSTITUTE OF METALS, 74(11) (11), 740 - 745, JapaneseSpatially Resolved Thermal Conductivity of Intermetallic Compounds Measured by Micro-Thermoreflectance Method[Refereed]Scientific journal
- Nov. 2010, APPLIED PHYSICS LETTERS, 97(19) (19), English[Refereed]Scientific journal
- Nov. 2010, IEEE JOURNAL OF QUANTUM ELECTRONICS, 46(11) (11), 1582 - 1589, English[Refereed]Scientific journal
- Sep. 2010, Zairyo/Journal of the Society of Materials Science, Japan, 59(9) (9), 666 - 670, Japanese[Refereed]Scientific journal
- Sep. 2010, JOURNAL OF APPLIED PHYSICS, 108(6) (6), English[Refereed]Scientific journal
- May 2010, APPLIED PHYSICS LETTERS, 96(21) (21), English[Refereed]Scientific journal
- Apr. 2010, APPLIED PHYSICS LETTERS, 96(15) (15), English[Refereed]Scientific journal
- Apr. 2010, JOURNAL OF APPLIED PHYSICS, 107(7) (7), English[Refereed]Scientific journal
- Feb. 2010, JOURNAL OF APPLIED PHYSICS, 107(4) (4), English[Refereed]Scientific journal
- 2010, 2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), EnglishAll-optical switch using InAs quantum dots in a vertical cavity[Refereed]International conference proceedings
- 2010, 35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 1808 - 1813, EnglishENERGY BAND STRUCTURE AND ABSORPTION COEFFICIENTS IN THE QUANTUM-DOT INTERMEDIATE BAND SOLAR CELLS[Refereed]International conference proceedings
- 2010, QUANTUM DOTS AND NANOSTRUCTURES: SYNTHESIS, CHARACTERIZATION, AND MODELING VII, 7610, EnglishSelf-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices[Refereed]International conference proceedings
- 2010, PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XVIII, 7597, English[Refereed]International conference proceedings
- 2010, 35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, EnglishINTRABAND RELAXATION OF PHOTOEXCITED CARRIERS IN MULTIPLE STACKED QUANTUM DOTS AND QUANTUM DOT CHAINS[Refereed]International conference proceedings
- 2010, 35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 1834 - 1837, English[Refereed]International conference proceedings
- 2010, 材料, Vol. 59, No.9, pp. 666-670, Japanese低温成長したAlGdN蛍光体薄膜における深紫外発光効率の向上[Refereed]Scientific journal
- 2010, QUANTUM DOTS 2010, 245, English[Refereed]International conference proceedings
- 2010, QUANTUM DOTS AND NANOSTRUCTURES: SYNTHESIS, CHARACTERIZATION, AND MODELING VII, 7610, English[Refereed]International conference proceedings
- Dec. 2009, JOURNAL OF LUMINESCENCE, 129(12) (12), 1448 - 1453, English[Refereed]Scientific journal
- Dec. 2009, REVIEW OF SCIENTIFIC INSTRUMENTS, 80(12) (12), English[Refereed]Scientific journal
- Nov. 2009, THIN SOLID FILMS, 518(2) (2), 530 - 533, English[Refereed]Scientific journal
- Jul. 2009, APPLIED PHYSICS LETTERS, 95(2) (2), English[Refereed]Scientific journal
- Jun. 2009, Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, 73(6) (6), 434 - 438, Japanese[Refereed]Scientific journal
- 2009, 2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM), 406 - +, EnglishQuantum dots in a vertical cavity for all-optical switching devices[Refereed]International conference proceedings
- 応用物理学会, 2009, 応用物理, Vol. 78, No.4, pp. 355-359(4) (4), 355 - 359, Japanese原子層窒素ドープGaAsを用いた励起子微細構造の制御と光子源に向けた展開[Refereed]Scientific journal
- 神戸大学大学院工学研究科, 2009, Memoirs of the Graduate School of Engineering Kobe University, 1(1) (1), 1 - 8, EnglishControlling Polarization in Quantum-dot Semiconductor Optical Amplifiers[Refereed]Research institution
- 2009, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 1, 6, S139 - S142, English[Refereed]International conference proceedings
- 2009, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 1, 6, S146 - S149, English[Refereed]International conference proceedings
- Nov. 2008, APPLIED PHYSICS LETTERS, 93(21) (21), English[Refereed]Scientific journal
- Nov. 2008, APPLIED PHYSICS EXPRESS, 1(11) (11), English[Refereed]Scientific journal
- Nov. 2008, JOURNAL OF APPLIED PHYSICS, 104(10) (10), English[Refereed]Scientific journal
- Oct. 2008, JOURNAL OF APPLIED PHYSICS, 104(7) (7), English[Refereed]Scientific journal
- Aug. 2008, PHYSICAL REVIEW B, 78(7) (7), English[Refereed]Scientific journal
- Jul. 2008, APPLIED PHYSICS EXPRESS, 1(7) (7), English[Refereed]Scientific journal
- Jun. 2008, APPLIED PHYSICS LETTERS, 92(24) (24), English[Refereed]Scientific journal
- Jun. 2008, JOURNAL OF APPLIED PHYSICS, 103(11) (11), English[Refereed]Scientific journal
- May 2008, PHYSICAL REVIEW B, 77(19) (19), English[Refereed]Scientific journal
- Apr. 2008, REVIEW OF SCIENTIFIC INSTRUMENTS, 79(4) (4), English[Refereed]Scientific journal
- Mar. 2008, Journal of Luminescence, Vol 128. No. 5-6, pp. 975-977, EnglishPhotoluminescence dynamics of coupled quantum dots[Refereed]Scientific journal
- 2008, 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 231 - 233, EnglishEXCITON FINE STRUCTURE OF NITROGEN ISOELECTRONIC CENTERS IN GaAs[Refereed]International conference proceedings
- Jan. 2008, APPLIED PHYSICS LETTERS, 92(3) (3), English[Refereed]Scientific journal
- 2008, IUMRS-ICA 2008 SYMPOSIUM AA. RARE-EARTH RELATED MATERIAL PROCESSING AND FUNCTIONS, 1, English[Refereed]International conference proceedings
- May 2007, Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, 27(2) (2), 151 - 153, ChineseInvestigation of nitrided InAs/GaAs self-assembled quantum dotsScientific journal
- Apr. 2007, JOURNAL OF CRYSTAL GROWTH, 301, 34 - 37, English[Refereed]Scientific journal
- Apr. 2007, JOURNAL OF CRYSTAL GROWTH, 301, 709 - 712, English[Refereed]Scientific journal
- 2007, 2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 579 - 581, EnglishMultidirectional transmission electron microscope observation of a single InAs/GaAs self-assembled quantum dot[Refereed]International conference proceedings
- 2007, PHYSICS OF SEMICONDUCTORS, PTS A AND B, 893, 249 - +, EnglishConfined electronic structures of nitrogen isoelectronic centers in GaAs grown by atomically controlled doping technique[Refereed]International conference proceedings
- 2007, PHYSICS OF SEMICONDUCTORS, PTS A AND B, 893, 1245 - +, EnglishAnisotropic magnetic-field evolution of valence-band states in one-dimensional diluted magnetic semiconductors[Refereed]International conference proceedings
- 2007, 2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 303 - 306, EnglishReal time probing of self-assembling process steps in InAs/GaAs quantum dot growth[Refereed]International conference proceedings
- Jan. 2007, APPLIED PHYSICS LETTERS, 90(4) (4), English[Refereed]Scientific journal
- 2007, PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 4(7) (7), 2490 - +, English[Refereed]International conference proceedings
- 2007, 2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, pp. 197-200, 197 - 200, EnglishControl of optical emission from coupled excitonic states in quantum dot superlattice structures[Refereed]International conference proceedings
- Dec. 2006, PHYSICAL REVIEW B, 74(24) (24), English[Refereed]Scientific journal
- Nov. 2006, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45(42-45) (42-45), L1186 - L1189, English[Refereed]Scientific journal
- Jul. 2006, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45(24-28) (24-28), L650 - L653, English[Refereed]Scientific journal
- Jul. 2006, PHYSICAL REVIEW B, 74(3) (3), English[Refereed]Scientific journal
- May 2006, APPLIED PHYSICS LETTERS, 88(21) (21), English[Refereed]Scientific journal
- 2006, Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, English[Refereed]International conference proceedings
- 2006, Physica Status Solidi C: Conferences, 3(3) (3), 667 - 670, English[Refereed]International conference proceedings
- 2006, 2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS, 201 - +, EnglishEmission-wavelength extension of InAs/GaAs quantum dots by controlling lattice-mismatch strain[Refereed]International conference proceedings
- 2006, PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3, 3(3) (3), 667 - +, EnglishValence-band mixing induced by sp-d exchange interaction in CdMnTe quantum wires[Refereed]International conference proceedings
- Oct. 2005, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(10) (10), 7390 - 7394, English[Refereed]Scientific journal
- Jun. 2005, AIP Conference Proceedings, 772, 387 - 388, English[Refereed]International conference proceedings
- Apr. 2005, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(4B) (4B), 2528 - 2530, English[Refereed]Scientific journal
- Mar. 2005, 日本学術振興会科学研究費補助金・基盤研究(B)(2),平成16年度研究実績報告書, Japanese形状制御した量子ドットによる偏光無依存吸収端の実現[Refereed]Scientific journal
- Feb. 2005, JOURNAL OF CRYSTAL GROWTH, 275(1-2) (1-2), E2221 - E2224, English[Refereed]Scientific journal
- 2005, IQEC, International Quantum Electronics Conference Proceedings, 2005, 265 - 266, English[Refereed]International conference proceedings
- 2005, IQEC, International Quantum Electronics Conference Proceedings, 2005, 261 - 262, English[Refereed]International conference proceedings
- 2005, 2005 International Conference on Indium Phosphide and Related Materials, 52 - 55, EnglishMechanism of emission-wavelength extension in nitrided InAs/GaAs quantum dots[Refereed]International conference proceedings
- 2005, 2005 International Conference on Indium Phosphide and Related Materials, 355 - 358, EnglishWavelength control of nitrided InAs/GaAs quantum dots in fiber-optic communication region[Refereed]International conference proceedings
- 2005, ULTRAFAST PHENOMENA XIV, 79, 263 - 265, EnglishUltrafast anisotropic processes of exciton magnetic polarons in CdTe/CdMnTe quantum wires[Refereed]International conference proceedings
- Jan. 2005, JOURNAL OF APPLIED PHYSICS, 97(2) (2), English[Refereed]Scientific journal
- 2005, Physics of Semiconductors, Pts A and B, 772, 1353 - 1354, EnglishHole-spin reorientation in (CdTe)(0.5)(Cd0.75Mn0.25Te)(0.5) tilted superlattices grown on Cd0.74Mg0.26Te(001) vicinal surface[Refereed]International conference proceedings
- Jun. 2004, Physical Review B - Condensed Matter and Materials Physics, 69(23) (23), 1 - 233308, English[Refereed]Scientific journal
- Jun. 2004, PHYSICAL REVIEW B, 69(23) (23), English[Refereed]Scientific journal
- Apr. 2004, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(4B) (4B), 1978 - 1980, English[Refereed]Scientific journal
- Mar. 2004, APPLIED PHYSICS LETTERS, 84(11) (11), 1820 - 1822, English[Refereed]Scientific journal
- Mar. 2004, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 21(2-4) (2-4), 345 - 348, English[Refereed]Scientific journal
- Society of Materials Science Japan, 2004, Zairyo/Journal of the Society of Materials Science, Japan, 53(12) (12), 1346 - 1350, Japanese[Refereed]Scientific journal
- 2004, 神戸大学版ベンチャー・ビジネス・ラボラトリー年報, VOL.9,102-107, Japanese半導体量子ナノ構造のスピンエレクトロニクス応用[Refereed]Scientific journal
- 2004, 神戸大学版ベンチャー・ビジネス・ラボラトリー年報, VOL.9,6-13, Japaneseフォトニクスマテリアル量子ナノ構造におけるスピン制御[Refereed]Scientific journal
- Nov. 2003, APPLIED PHYSICS LETTERS, 83(20) (20), 4152 - 4153, English[Refereed]Scientific journal
- Nov. 2003, JOURNAL OF APPLIED PHYSICS, 94(10) (10), 6487 - 6490, English[Refereed]Scientific journal
- Jul. 2003, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 238(2) (2), 229 - 232, English[Refereed]Scientific journal
- May 2003, PHYSICAL REVIEW B, 67(19) (19), English[Refereed]Scientific journal
- Apr. 2003, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(4B) (4B), 2329 - 2331, English[Refereed]Scientific journal
- Mar. 2003, 日本学術振興会科学研究費補助金・基盤研究(B)(2),平成14年度研究成果報告書, 未記入, Japanese形状制御量子ドットによる超高速・高非線形光学応答の同時実現[Refereed]Scientific journal
- Feb. 2003, Physical Review B - Condensed Matter and Materials Physics, 67(8) (8), English[Refereed]Scientific journal
- Feb. 2003, Physical Review B - Condensed Matter and Materials Physics, 67(8) (8), 853011 - 853017, EnglishExcitonic states in CdTe/Cd0.74Mg0.26Te quantum wires grown on vicinal substratesScientific journal
- Feb. 2003, PHYSICAL REVIEW B, 67(8) (8), English[Refereed]Scientific journal
- Feb. 2003, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(2A) (2A), 371 - 374, English[Refereed]Scientific journal
- Optical Society of American (OSA), 2003, OSA Trends in Optics and Photonics Series, 88, 534 - 535, EnglishWideband polarization insensitivity in quantum dot optical amplifierInternational conference proceedings
- 2003, 2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 531 - 533, EnglishNovel characterization technique for GaAs/GaInP heterojunction bipolar transistor wafers based on Fourier transformed photoreflectance enabling selective determination of interface electric fields[Refereed]International conference proceedings
- 2003, 2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, 0(4),1137-1140, 1137 - 1140, English[Refereed]International conference proceedings
- 2003, COMPOUND SEMICONDUCTORS 2002, 174, 173 - 177, EnglishOne-dimensional free exciton in CdTe/Cd0.74Mg0.26Te quantum wires[Refereed]Scientific journal
- 2003, 神戸大学ベンチャー・ビジネス・ラボラトリー年報2003, Vol.8,pp.5-14, JapaneseGaAs/AlGaAsフォトリフラクティブ多重量子井戸のフェムト秒光回析[Refereed]
- 2003, 神戸大学ベンチャー・ビジネス・ラボラトリー年報2003, Vol.8,pp.126-129, JapaneseCdTe/CdMnTe量子細線における磁気光学特性の異方性[Refereed]
- Nov. 2002, Physical Review B - Condensed Matter and Materials Physics, 66(19) (19), 1953171 - 1953177Magnetophotoluminescence study of the Ga
0.5 In0.5 P/GaAs heterointerface with a ordering-induced two-dimensional electron gas[Refereed]Scientific journal - Nov. 2002, Physical Review B - Condensed Matter and Materials Physics, 66, 1953121 - 1953126[Refereed]
- American Physical Society (APS), Nov. 2002, Physical Review B, 66(19) (19), 195312 - 195312, English[Refereed]
- Nov. 2002, PHYSICAL REVIEW B, 66(19) (19), English[Refereed]Scientific journal
- Oct. 2002, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41(10B) (10B), L1143 - L1145, English[Refereed]Scientific journal
- Apr. 2002, Physica Status Solidi (A) Applied Research, 190(3) (3), 703 - 707, English[Refereed]International conference proceedings
- Apr. 2002, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 190(3) (3), 699 - 702, EnglishRadiative lifetimes of excitons in CdMgTe/CdTe tilted superlattices grown on vicinal surfaces[Refereed]Scientific journal
- Mar. 2002, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 13(2-4) (2-4), 329 - 332, EnglishTwo-dimensional electron gas at Ga0.5In0.5P/GaAs heterointerface spontaneously induced by atomic ordering[Refereed]Scientific journal
- 2002, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 515 - 518High-density electron gas induced by atomic ordering in undoped Ga
0.5 In0.5 P/GaAs heterostructure[Refereed]International conference proceedings - 2002, Physical Review B - Condensed Matter and Materials Physics, 66(19) (19), 1 - 7, English[Refereed]Scientific journal
- 2002, COMPOUND SEMICONDUCTORS 2001, (170) (170), 519 - 524, EnglishBiexciton formation in CdTe/Cd0.74Mg0.26Te quantum wires[Refereed]Scientific journal
- 2002, COMPOUND SEMICONDUCTORS 2001, (170) (170), 525 - 530, EnglishStranski-Krastanov growth of (In,Ga)As quantum dots by controlling the wetting layer[Refereed]Scientific journal
- Jan. 2002, Physical Review B - Condensed Matter and Materials Physics, 66, 1 - 6[Refereed]
- Apr. 2001, Physical Review B - Condensed Matter and Materials Physics, 63(16) (16), English[Refereed]Scientific journal
- Mar. 2001, Physical Review B - Condensed Matter and Materials Physics, 63(12) (12), English[Refereed]Scientific journal
- 2001, New Diamond and Frontier Carbon Technology, 11(5) (5), 339 - 345, EnglishOptical Characterization of CVD-Diamond FilmsScientific journal
- 2001, PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, 453 - 454, EnglishPlasmon-phonon coupling at Ga0.5In0.5P/GaAs heterointerfaces induced by CuPt-type ordering[Refereed]International conference proceedings
- 2001, PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, 365 - 366, EnglishOptical anisotropy of Stranski-Krastanov growth surface of InAs on GaAs (001)[Refereed]International conference proceedings
- 2001, PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, 353 - 354, EnglishReflectance-difference spectroscopy of (001) InAs surfaces in ultrahigh vacuum[Refereed]International conference proceedings
- 2001, PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, 218 - 219, EnglishEnergy relaxation by phonon scattering in long-range ordered (Al0.5Ga0.5)(0.5)In0.5P[Refereed]International conference proceedings
- 2001, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 330 - 333Internal electric field effects at ordered Ga
0.5 In0.5 P/GaAs heterointerface investigated by photoreflectance spectroscopy[Refereed]International conference proceedings - Jun. 2000, Applied Surface Science, 159, 503 - 507[Refereed]Scientific journal
- May 2000, Physica E: Low-Dimensional Systems and Nanostructures, 7(3) (3), 891 - 895[Refereed]Scientific journal
- SPIE, 2000, Proceedings of SPIE - The International Society for Optical Engineering, 4086, 535 - 539, EnglishInternational conference proceedings
- IOP Publishing, Jan. 2000, Japanese Journal of Applied Physics, 39(S1) (S1), 328 - 328Scientific journal
- 2000, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 154 - 157Interdiffusion effects at long-range ordered Ga
0.5 In0.5 P and GaAs heterointerfaces[Refereed]Scientific journal - 2000, Proceedings of SPIE - The International Society for Optical Engineering, 4110, 9 - 16, English[Refereed]Scientific journal
- Up-converted photoluminescence (UPL) was observed at thelong-range ordered (Al0.5Ga0.5)0.5In0.5P/GaAs(001)heterointerface, during the excitation of GaAs. Excitation-powerdependence of the UPL intensity reflects carrier-localizationproperties caused by potential fluctuations due to a multidomainstructure in the ordered(Al0.5Ga0.5)0.5In0.5P. When we excited the GaAslayer, photoexcited carriers spatially transferred to the(Al0.5Ga0.5)0.5In0.5P layer and relaxed fromhigher lying states to lower lying states in the fluctuatedpotential. Time-resolved measurements were performed for the UPL andnormal photoluminescence (NPL) excited by an above-gap light. Weobserved a slowly rising component in the time-resolved UPL, whereasthe NPL showed an exponential decay profile. These results revealthat the carrier-relaxation processes are different near the surfaceand near the interface of the epitaxial layer.The Japan Society of Applied Physics, Feb. 1999, Jpn J Appl Phys, 38(2) (2), 1001 - 1003, English[Refereed]
- 1999, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 159 - 162Energy relaxation by multiphonon processes in partially ordered (Al
0.5 Ga0.5 )0.5 In0.5 P[Refereed]Scientific journal - American Institute of Physics Inc., 1999, Journal of Applied Physics, 86(6) (6), 3140 - 3143, English[Refereed]Scientific journal
- 1999, Physical Review B - Condensed Matter and Materials Physics, 59(23) (23), 15358 - 15362, English[Refereed]Scientific journal
- American Institute of Physics Inc., Jul. 1998, Journal of Applied Physics, 84(1) (1), 359 - 363, English[Refereed]Scientific journal
- 1998, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 521 - 524Efficiency of photoluminescence up-conversion at (Al
0.5 Ga0.5 )0.5 In0.5 P and GaAs heterointerface[Refereed]International conference proceedings - 1998, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 525 - 528Spin-polarized excitons in long-range ordered Ga
0.5 In0.5 P[Refereed]International conference proceedings - 1998, Proceedings of SPIE - The International Society for Optical Engineering, 3175, 465 - 469, English[Refereed]International conference proceedings
- 1998, Physical Review B - Condensed Matter and Materials Physics, 57(24) (24), R15044 - R15047, English[Refereed]Scientific journal
- Jan. 1998, Superlattices and Microstructures, 23(1) (1), 173 - 176[Refereed]Scientific journal
- Elsevier, 1997, Applied Surface Science, 113-114, 631 - 637, English[Refereed]Scientific journal
- 1997, Physical Review B - Condensed Matter and Materials Physics, 55(7) (7), 4411 - 4416, English[Refereed]Scientific journal
- Oct. 1996, Journal of Applied Physics, 80(8) (8), 4592 - 4598[Refereed]Scientific journal
- Japan Society of Applied Physics, 1996, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35(10) (10), 5367 - 5373, EnglishScientific journal
- 1996, Physical Review B - Condensed Matter and Materials Physics, 54(23) (23), 16714 - 16718, English[Refereed]Scientific journal
- 1996, Physical Review B - Condensed Matter and Materials Physics, 53(23) (23), 15713 - 15718, English[Refereed]Scientific journal
- American Inst of Physics, Apr. 1995, Applied Physics Letters, 66(14) (14), 1794 - 1796, English[Refereed]Scientific journal
- IEEE, 1995, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 257 - 260, EnglishAnisotropic photocurrent in long-range ordered Ga0.5In0.5PInternational conference proceedings
- JJAP, Oct. 1994, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 33(10) (10), 6032 - 6038, EnglishTheoretical analysis of photoacoustic displacement for inhomogeneous materialsScientific journal
- 1994, Physical Review B, 50(4) (4), 2420 - 2424, English[Refereed]Scientific journal
- 1994, Journal of Applied Physics, 76(10) (10), 5681 - 5689, English[Refereed]Scientific journal
- The electronic structure of n-Al0.28Ga0.72As/In0.23Ga0.77As/GaAs has been investigated by photoluminescence (PL) and photoreflectance (PR) spectroscopies. Transitions associated with the $n{=}1$ and 2 electron subbands in the In0.23Ga0.77As single quantum well were observed. Two-dimensional carrier density was evaluated in terms of the quantum confined Franz-Keldysh (FK) effect of the transition between the lowest states of electrons and heavy holes. Because of penetrations of the confined electron density into the neighboring layers, PR spectra of GaAs show FK oscillation.The Japan Society of Applied Physics, Jun. 1992, Jpn J Appl Phys, 31(6) (6), L756 - L758, English[Refereed]
- The Physical Society of Japan (JPS), 22 Aug. 2014, Meeting abstracts of the Physical Society of Japan, 69(2) (2), 514 - 514, Japanese8aAJ-6 Upconversion photoluminescence in GaAs/AlAs multiple quantum wells
- The Physical Society of Japan (JPS), 05 Mar. 2014, Meeting abstracts of the Physical Society of Japan, 69(1) (1), 689 - 689, Japanese27aAU-9 Control of exciton quantum beat in a multiple quantum well at higher temperature
- The Physical Society of Japan (JPS), 26 Aug. 2013, Meeting abstracts of the Physical Society of Japan, 68(2) (2), 600 - 600, JapaneseEffects of phonons on ultrafast response due to quantum beat oscillation
- The Physical Society of Japan (JPS), 26 Aug. 2013, Meeting abstracts of the Physical Society of Japan, 68(2) (2), 665 - 665, JapanesePhotoliminescence polarization in stacking-direction-controlled InAs/GaAs quantum dots
- The Physical Society of Japan (JPS), 26 Mar. 2013, Meeting abstracts of the Physical Society of Japan, 68(1) (1), 742 - 742, Japanese26aXQ-4 Intensity modulation of optical pulse due to exciton quantum beat in a GaAs/AlAs multiple quantum well
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics, Mar. 2013, Japanese journal of applied physics : JJAP, 52(3) (3), 03BA01 - 1-5, EnglishPhysical Properties of Amorphous In-Ga-Zn-O Films Deposited at Different Sputtering Pressures (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
- The Physical Society of Japan (JPS), 24 Aug. 2012, Meeting abstracts of the Physical Society of Japan, 67(2) (2), 614 - 614, Japanese18aFB-6 Intersubband transition dynamics in InAs/GaAs quantum dots in optical cavity
- The Physical Society of Japan (JPS), 05 Mar. 2012, Meeting abstracts of the Physical Society of Japan, 67(1) (1), 778 - 778, Japanese24pPSA-24 Carrier dynamics in strain compensation multiple stacked quantum dots under non-resenant excitatien rendition
- The Physical Society of Japan (JPS), 24 Aug. 2011, Meeting abstracts of the Physical Society of Japan, 66(2) (2), 728 - 728, Japanese21pPSA-37 Magneto-photoluminescence of biexciton bound to nitrogen pair in GaAs
- The Physical Society of Japan (JPS), 24 Aug. 2011, Meeting abstracts of the Physical Society of Japan, 66(2) (2), 731 - 731, Japanese21pPSA-48 Doping concentration dependence of coherent plasmon oscillation in GaAs nipi superlattice
- The Physical Society of Japan (JPS), 24 Aug. 2011, Meeting abstracts of the Physical Society of Japan, 66(2) (2), 746 - 746, Japanese21pPSB-46 Relaxation process of carriers in strain compensation multiple stacked quantum dots under non-resonant excitation condition
- The Physical Society of Japan (JPS), 24 Aug. 2011, Meeting abstracts of the Physical Society of Japan, 66(2) (2), 713 - 713, Japanese21aRB-9 Incident pulse energy dependence on optical control of excitonic states in GaAs thin films
- The Physical Society of Japan (JPS), 24 Aug. 2011, Meeting abstracts of the Physical Society of Japan, 66(2) (2), 670 - 670, Japanese21pTL-7 Ferromagnetic State of GdN Thin Film Studied by Ferromagnetic Resonance II
- The Physical Society of Japan (JPS), 03 Mar. 2011, Meeting abstracts of the Physical Society of Japan, 66(1) (1), 698 - 698, Japanese25pHD-3 Ferromagnetic State of GdN Thin Film Studied by Ferromagnetic Resonance II
- The Physical Society of Japan (JPS), 03 Mar. 2011, Meeting abstracts of the Physical Society of Japan, 66(1) (1), 699 - 699, Japanese25pHD-7 Correlation between carriers in spacer layers and excitons in quantum dots in multi stacked structure
- The Physical Society of Japan (JPS), 03 Mar. 2011, Meeting abstracts of the Physical Society of Japan, 66(1) (1), 750 - 750, Japanese25pPSA-20 Effect of coherence of spatial electric field on control of excitonic states in GaAs thin films
- The Physical Society of Japan (JPS), 03 Mar. 2011, Meeting abstracts of the Physical Society of Japan, 66(1) (1), 750 - 750, Japanese25pPSA-19 Effects of formation of minibands to nonlinear optical property of excitons in GaAs/AlAs superlattices
- The Physical Society of Japan (JPS), 18 Aug. 2010, Meeting abstracts of the Physical Society of Japan, 65(2) (2), 657 - 657, Japanese25aWQ-1 Carrier transport in high density multiple stacked quantum dots
- The Physical Society of Japan (JPS), 18 Aug. 2010, Meeting abstracts of the Physical Society of Japan, 65(2) (2), 658 - 658, Japanese25aWQ-4 Contribution of biexcitons to nonlinear optical property of excitons in GaAs/AlAs superlattices
- The Physical Society of Japan (JPS), 18 Aug. 2010, Meeting abstracts of the Physical Society of Japan, 65(2) (2), 667 - 667, Japanese26aWQ-2 Ferromagnetic State of GdN Thin Film Studied by Ferromagnetic Resonance
- The Physical Society of Japan (JPS), 18 Aug. 2010, Meeting abstracts of the Physical Society of Japan, 65(2) (2), 699 - 699, Japanese24pRC-8 Long-lived oscillation due to coherent plasmons in a modulation doped GaAs
- The Physical Society of Japan (JPS), 18 Aug. 2010, Meeting abstracts of the Physical Society of Japan, 65(2) (2), 731 - 731, Japanese25pPSB-31 Property of control of excitonic states confined in GaAs thin films
- The Physical Society of Japan (JPS), 01 Mar. 2010, Meeting abstracts of the Physical Society of Japan, 65(1) (1), 806 - 806, Japanese23aPS-40 Excitation power dependence of nonlinear optical response of excitons in GaAs/AlAs superlattices
- The Physical Society of Japan (JPS), 01 Mar. 2010, Meeting abstracts of the Physical Society of Japan, 65(1) (1), 715 - 715, Japanese21aHW-8 Dynamics of exciton relaxation in high density multiple stacked quantum dots
- The Physical Society of Japan (JPS), 01 Mar. 2010, Meeting abstracts of the Physical Society of Japan, 65(1) (1), 782 - 782, Japanese22pPSB-8 Diamagnetic shift of the photoluminescence spectra in nitrogen δ-doped GaAs
- The Physical Society of Japan (JPS), 18 Aug. 2009, Meeting abstracts of the Physical Society of Japan, 64(2) (2), 651 - 651, Japanese27aPS-28 First pulse power dependence of nonlinear optical response of excitons in GaAs thin film
- The Physical Society of Japan (JPS), 18 Aug. 2009, Meeting abstracts of the Physical Society of Japan, 64(2) (2), 657 - 657, Japanese27aPS-54 Population of oxciton fine structure in isocloctronic bound cxcitons in nitrogen δ-dopcd GaAs
- The Physical Society of Japan (JPS), 18 Aug. 2009, Meeting abstracts of the Physical Society of Japan, 64(2) (2), 593 - 593, Japanese26aXD-13 Control of excitonic optical nonlinear response in GaAs/AlAs multiple quantum wells
- The Physical Society of Japan (JPS), 25 Aug. 2008, Meeting abstracts of the Physical Society of Japan, 63(2) (2), 660 - 660, Japanese22aPS-43 Ultrafast exciton population control in GaAs thin films
- The Physical Society of Japan (JPS), 25 Aug. 2008, Meeting abstracts of the Physical Society of Japan, 63(2) (2), 605 - 605, Japanese21aYK-11 Effect of Mn Composition Distribution on Anisotropic Magneto-optical Properties in CdTe/CdMnTe Tilted Superlattices
- The Physical Society of Japan (JPS), 25 Aug. 2008, Meeting abstracts of the Physical Society of Japan, 63(2) (2), 648 - 648, Japanese21pYH-2 Film thickness dependence of exciton-polariton propagation effects in GaAs thin films
- The Physical Society of Japan (JPS), 29 Feb. 2008, Meeting abstracts of the Physical Society of Japan, 63(1) (1), 738 - 738, Japanese26aPS-27 Transient reflectivity change spectra of confined excitons in GaAs thin films
- The Physical Society of Japan (JPS), 29 Feb. 2008, Meeting abstracts of the Physical Society of Japan, 63(1) (1), 683 - 683, Japanese25pWJ-6 Magnetic-Field Evolution of Luminescence Linewidth in CdTe/CdMuTe Tilted Superlattices
- The Physical Society of Japan (JPS), 21 Aug. 2007, Meeting abstracts of the Physical Society of Japan, 62(2) (2), 688 - 688, Japanese22aTG-7 Auisotropic Zeeman Shift in CdTe/CdMnTe Tilted Superlattices
- The Physical Society of Japan (JPS), 28 Feb. 2007, Meeting abstracts of the Physical Society of Japan, 62(1) (1), 663 - 663, Japanese18pTA-11 Near-Field Spectroscopy of II-VI Compound Tilted Superlattices
- The Physical Society of Japan (JPS), 28 Feb. 2007, Meeting abstracts of the Physical Society of Japan, 62(1) (1), 673 - 673, Japanese19pTA-6 In-Plane Anisotropy of Magneto-Optical Properties in CdTe/CdMnTe Tilted Superlattices
- The Physical Society of Japan (JPS), 18 Aug. 2006, Meeting abstracts of the Physical Society of Japan, 61(2) (2), 528 - 528, Japanese23pXJ-4 Scanning Near-Field Optical Microscopy of CdTe/CdMnTe Quantum Wire
- The Physical Society of Japan (JPS), 18 Aug. 2006, Meeting abstracts of the Physical Society of Japan, 61(2) (2), 544 - 544, Japanese25aXJ-12 Magnetic Field Dependence of Electronic Structure in CdTe/CdMnTe Quantum Wire
- The Physical Society of Japan (JPS), 04 Mar. 2006, Meeting abstracts of the Physical Society of Japan, 61(1) (1), 691 - 691, Japanese28pPSB-1 Control of Exchange Interaction and Electronic Structure in CdTe/CdMnTe Quantum Wire
- 31 Jan. 2006, 電気学会研究会資料. : The Papers of Technical Meeting on Electromagnetic Theory, IEE Japan. EMT, 電磁界理論研究会, 2006(1) (1), 157 - 160, JapanesePolarized Optical Gain of Columnar InAs/GaAs Quantum Dots : To realize Semiconductor Optical Amplifier
- Polarized Optical Gain of Columnar InAs/GaAs Quantum Dots : To realize Semiconductor Optical AmplifierWe have investigated polarized optical gain of columnar quantum dots by using variable stripe length method. The columnar QDs were grown by closely stacking the Stranski-Krastanow-mode InAs-island layers. The aspect ratio of the QD can be controlled by changing in the stacking layer number (SLN). The optical gain sensitively depends on the SLN. With increasing the SLN, the TM-sensitive optical gain has been demonstrated. Furthermore, we obtained almost polarization insensitive optical gain for the sample with seven staking layers.The Institute of Electronics, Information and Communication Engineers, 26 Jan. 2006, Technical report of IEICE. LQE, 105(593) (593), 35 - 38, Japanese
- The Physical Society of Japan (JPS), 04 Mar. 2005, Meeting abstracts of the Physical Society of Japan, 60(1) (1), 630 - 630, Japanese24aZC-4 Valence band mixing in CdTe/Cd_<0.75>Mn_<0.25>Te nano-wire structures in magnetic field
- The Physical Society of Japan (JPS), 25 Aug. 2004, Meeting abstracts of the Physical Society of Japan, 59(2) (2), 614 - 614, Japanese14aYC-3 Anisotropic energy relaxation of exciton magnetic polaron in CdTe/(Cd, Mn)Te quantum wire
- The Physical Society of Japan (JPS), 03 Mar. 2004, Meeting abstracts of the Physical Society of Japan, 59(1) (1), 700 - 700, Japanese29pYF-12 Formation of exciton magnetic polaron in CdTe/CdMnTe nano wires
- The Physical Society of Japan (JPS), 03 Mar. 2004, Meeting abstracts of the Physical Society of Japan, 59(1) (1), 700 - 700, Japanese29pYF-11 Anisotropic magnetic-field dependence of hole spins in CdTe/(Cd,Mn)Te wire structures
- Polarization Control of Quantum Dots for SOA ApplicationsWe have investigated polarization of photoluminescence (PL) emission from the cleaved-edge surface of a wafer involving InAs self-assembled quantum dots (QDs) capped by In_xGa_<1-x>As layer. With increasing indium (In) composition x in the capping layer, the PL of QDs shifts toward the longer wavelength side and shows an enhancement of the TM-mode PL intensity at x =0.13. In order to investigate effects of light propagation on the PL polarization, we have compared electroluminescence (EL) with PL spectra and investigated the PL excitation-wavelength dependence of the PL polarization.The Institute of Electronics, Information and Communication Engineers, 11 Dec. 2003, Technical report of IEICE. LQE, 103(526) (526), 5 - 8, Japanese
- The Physical Society of Japan (JPS), 15 Aug. 2003, Meeting abstracts of the Physical Society of Japan, 58(2) (2), 577 - 577, JapaneseAnisotropic exchange interaction and quantum wire properties in CdTe/CdMnTe fractional superlattice grown on a vicinal substrate
- The Physical Society of Japan (JPS), 13 Aug. 2002, Meeting abstracts of the Physical Society of Japan, 57(2) (2), 586 - 586, JapaneseMagneto-optical properties in CdTe/CdMnTe quantum wires
- The Physical Society of Japan (JPS), 13 Aug. 2002, Meeting abstracts of the Physical Society of Japan, 57(2) (2), 559 - 559, JapaneseExcitonic luminescence from CdTe/CdMgTe quantum wires
- Excitonic States in CdMgTe/CdTe Quantum WiresWe investigated excitonic luminescence from CdTe/Cd_<0.74>Mg_<0.26>Te quantum wires (QWRs) grown on vicinal substrates. The temperature dependence of the radiative lifetime of one-dimensional (1D) exciton in the QWRs was measured by using time-resolved spectroscopy, and is compared with that of two-dimensional (2D) exciton in CdTe/Cd_<0.74>Mg_<0.26>Te quantum well (QW). The radiative lifetime in the QWRs and the QW increase with T and show a clearly different behavior. The observed radiative lifetime in the QWRs and QW are expressed as 100 T^<1/2> psK^<-1/2> and 11 T psK^<-1> respectively. At low temperature < 10K, however, the radiative lifetimes deviate from the T^<1/2> dependence. In this temperature region, a new PL peak appears at the lower energy side of the exciton PL. This low energy PL peak is enhanced under a high excitation. By analyzing the PL spectra and the PL decay profiles, we discuss the origin of the new PL signal.The Institute of Electronics, Information and Communication Engineers, 04 Oct. 2001, IEICE technical report. Electron devices, 101(337) (337), 13 - 18, Japanese
- 2000, COMPOUND SEMICONDUCTORS 1999, (166) (166), 239 - 242, EnglishInitial stages of InAs-quantum dot formation studies by reflectance-difference spectroscopy and photoluminescence
- 1999, COMPOUND SEMICONDUCTORS 1998, (162) (162), 457 - 462, EnglishSelf-organized process of InAs-quantum dots monitored by reflectance-difference spectroscopy
- Dec. 1997, JOURNAL OF APPLIED PHYSICS, 82(11) (11), 5876 - 5876, EnglishOthers
- 1997, Physical Review B, 55(7) (7), 4411 - 4416
- Dec. 1996, PHYSICAL REVIEW B, 54(23) (23), 16714 - 16718, English
- Apr. 1996, JOURNAL OF ELECTRONIC MATERIALS, 25(4) (4), 661 - 665, EnglishPhotocurrent anisotropy in compositional modulated superlattice of long-range ordered Ga0.5In0.5P
- 1996, DIAMOND FILMS AND TECHNOLOGY, 6(3) (3), 139 - 145, EnglishTransient cathodoluminescence spectroscopy of synthetic diamond films
- 1996, Physical Review B, 53(23) (23), 15713 - 15718
- 1994, SUPERLATTICES AND MICROSTRUCTURES, 15(2) (2), 137 - 140, English
- Electric field effect for optical transitions in In GaAs/GaAs strained layer superlatticesWe have performed electroreflectance spectroscopy on a 5-period In_0.26>Ga_0.76>As(3nm), GaAs(10nm) strained layer superlattice as a function of electric field.The applied electric field was exactly determined by the Franz-Keldysh oscillation of GaAs.We have resolved transitions between electrons confined in the In_0. 26>Ga_0.76>As layer and light holes localized in the adjacent layers.The type-II Stark-ladder transitions are clearly observed. The observed field evolution of the transition energy shows a nonlinear behavior originating from an anticrossing by oupling resonantly between the first light-hole subband and vertual energy states of light holes.The Institute of Electronics, Information and Communication Engineers, 19 Nov. 1993, IEICE technical report. Electron devices, 93(326) (326), 49 - 52, Japanese
- Kobe University, Mar. 1992, Memoirs of the Graduate School of Science and Technology, Kobe University. A, 10, 1 - 9, EnglishELECTRONIC STRUCTURE OF LONG-RANGE ORDERED Ga_<0.5>In_<0.5>P ALLOY SEMICONDUCTOR
- Springer, Aug. 2019, English, ISBN: 9789811390890Energy conversion efficiency of solar cells
- コロナ社, Oct. 2012, Japanese, ISBN: 9784339008425太陽電池のエネルギー変換効率
- Others, Quantum Dot Devices:Lecture Notes in Nanoscale Science and Technology, 2012, EnglishQuantum Dot Switches:Towards Nanoscale Power-Efficient All-Optical Signal ProcessingScholarly book
- Joint work, コロナ社, Sep. 2011, Japanese, ISBN: 9784339066210カーボンナノチューブ・グラフェンハンドブックScholarly book
- Single work, 株式会社エヌ・ティー・エス刊、第2編材料編・第2章ハードマテリアル・第3節「AlGaInP系半導体の自己組織化」執筆, Nov. 2009, Japanese自己組織化ハンドブックScholarly book
- Joint work, 材料編、第6章、6.3.1項「AlGaInP系赤色半導体の自己組織化」執筆, 1997, EnglishAtomic Ordering in Epitaxial Alloy Semiconductors:from the Discoveries to the Physical UnderstandingScholarly book
- Joint work, サイエンスフォーラム, 1994, English半導体計測評価事典Scholarly book
- Single work, 大阪大学学位論文, Feb. 1991, EnglishOriented Growth of Semiconductor Thin Films on Noncrystalline Substrates for GraphoepitaxyScholarly book
- Joint work, INSPEC, London, 1989, EnglishProperties of Lithium NiobateScholarly book
- 53rd IEEE Photovoltaic Specialists Conference (PVSC 53), Jun. 2025, English, Montreal, CanadaPhotocurrent Enhancement in CsPbBr3-xClx-based Soler Cells with Embedded Pbs Quantum Dots[Invited]
- 53rd IEEE Photovoltaic Specialists Conference (PVSC 53), Jun. 2025, English, Montreal, CanadaExcitation Power Dependence and Loss of Photonic Energy Conversion[Invited]
- R. Hanakuma;I. Kan;S. Asahi;Y. Harada;T. Kita, Jun. 2025, English, Montreal, CanadaEfficient Intraband Photoexcitation in Two-step Photon Up-Conversion Solar Cells Using Double-Tunnel Junction[Invited]
- 53rd IEEE Photovoltaic Specialists Conference (PVSC 53), English, Montreal, CanadaPhoton Partitioning by Band Filling in Intermediate-Band Thermoradiative Diodes”[Invited]
- 第72回応用物理学会春季学術講演会, Japanese半導体光共振器中での電気光学効果を利用したテラヘルツ電界センサ:結晶面方位の検討
- 第72回応用物理学会春季学術講演会, JapaneseInGaAs/GaAs多重量子井戸における励起子エネルギーに対する歪みの効果
- 第72回応用物理学会春季学術講演会半導体光共振器中での電気光学効果を利用したテラヘルツ電界センサ:位相差信号の共振器Q値依存性
- 第72回応用物理学会春季学術講演会, Japaneseダブルトンネル接合を利用したアップコンバージョン太陽電池の効率的バンド内遷移
- 第72回応用物理学会春季学術講演会, JapaneseSiレーザーパワーコンバーターの分光評価
- 35th International Photovoltaic Science and Engineering Conference(PVSEC-35), English, Shizuoka, JapanMaximum Output Power Density by Photon Partitioning Optimization in Intermediate-Band Thermoradiative diodes
- The 43rd Electronic Materials Symposium, English, NaraVoltage-Boost Effects Enhanced by Quantum Dots in Two-Step Photon Up-Conversion Solar Cells
- 第85回応用物理学会秋季学術講演会, Japanese, 新潟県, Japan, Domestic conference多重積層InAs/GaAs量子ドットを用いた光伝導アンテナの様々な励起光波長における光電流の励起光強度依存性
- 第85回応用物理学会秋季学術講演会, Japanese, 新潟県, Domestic conferenceInAs量子ドット成長に起因する格子不整合歪みを利用した差周波混合によるテラヘルツ電磁波発生
- 第85回応用物理学会秋季学術講演会, Japanese, 新潟県, Japan, Domestic conference中間バンドを有する熱放射ダイオードの理論発電密度(Ⅱ)
- 第85回応用物理学会秋季学術講演会, Japanese, 新潟県, Japan, Domestic conferenceIntraband Transitions Induced by Below-Bandgap Photoexcitation at CsPbBr₃/GaAs Heterointerface
- 第85回応用物理学会秋季学術講演会, Japanese, 新潟県, Japan, Domestic conferenceMAPbI₃/Siヘテロ構造を利用した二段階フォトンアップコンバージョン太陽電池
- 第85回応用物理学会秋季学術講演会, Japanese, 新潟県, Japan, Domestic conference2段階フォトンアップコンバージョン太陽電池におけるバンド内赤外光学遷移の量子ドットによる増強特性
- 52th IEEE Photovoltaic Specialists Conference (PVSC52), EnglishTwo-Step Photon Upconversion Solar Cells Based on CsPbBr3/GaAs Heterointerface
- 52th IEEE Photovoltaic Specialists Conference (PVSC52), EnglishVoltage Boost Effects in Solar Cells Utilizing Adiabatic Photon Up-Conversion with a Double Tunnel Junction
- 第71回応用物理学会春季学術講演会, Japanese, 東京都市大学極性制御した2段階アップコンバージョン太陽電池におけるアップコンバージョン特性の変化
- 第71回応用物理学会春季学術講演会, English, 東京都市大学Photon Up-Conversion in MAPbBr₃ Perovskite Deposited on GaAs
- 第71回応用物理学会春季学術講演会, 東京都市大学中間バンドを有する熱放射ダイオードの理論発電密度
- 第34回光物性研究会, EnglishQuantum-Dot-Free Two-Step Photon Up-Conversion Solar Cells Based on Cesium Lead(Ⅱ)Bromide/Gallinm Arsenide Inferface
- 第34回光物性研究会, Japanese局在表面プラズモン共鳴による高ドープInAs/GaAs量子ドットにおける赤外光吸収増強”
- 日本材料学会 2023年度 第3回半導体エレクトロニクス部門委員会第2回研究会, Japanese, 立命館大学 朱雀キャンパスダブルトンネル接合を内包する半導体ヘテロ構造における断熱的フォトンアップコンバージョンによる太陽電池の出力電圧上昇効果
- 第42回電子材料シンポジウム(EMS42), English, THE KASHIHARAVoltage Boost Effects in Two-Step Photon Up-Conversion Solar Cells with Double Tunnel Junctions
- 第42回電子材料シンポジウム(EMS42), English, THE KASHIHARAEnhanced Near-Infrared Absorption by Localized Surface Plasmon Resonence in Heavily-Doped InAs/GaAs Quantum Dots
- 第84回応用物理学会秋季学術講演会, 熊本城ホール ほか3会場, Japan, Domestic conferencenfluence of Substrates on Perovskite Deposited by Solution Process, a Step to Photon Up-Conversion Solar Cells
- 第84回応用物理学会秋季学術講演会, Japanese, 熊本城ホール ほか3会場, Japan, Domestic conference高ドープInAs/GaAs量子ドットにおける局在表面プラズモン共鳴による赤外光吸収増強
- 第84回応用物理学会秋季学術講演会, Japanese, 熊本城ホール ほか3会場, Japan, Domestic conferenceダブルトンネル接合を利用したラチェット型アップコンバージョン太陽電池における電圧上昇効果
- 50th IEEE Photovoltaic Specialists Conference (PVSC50), Jun. 2023, English, Puerto Rico, International conferenceUp-Converted Carrier Dynamics in AlxGa₁-xAs/InAs-Based Photon Up-Conversion Solar Cells with a Doubled-Heterointerface
- 50th IEEE Photovoltaic Specialists Conference (PVSC50), Jun. 2023, Puerto Rico, International conferenceLocalized Surface Plasmon Pesonance of Quantum Dots in Two-Step Photon Up-Conversion Solar Cell Structures
- 第70回応用物理学会春季学術講演会, English, ハイブリッド開催(上智大学&オンライン), JapanOptimization of the Morphological Structure of Spin-Coated MAPbBr₃ on p-GaAs Substrates for Perovskite/GaAs-based Photon Up-conversion Solar Cells
- 日本材料学会 2022年度エレクトロニクス部門委員会, Japanese, 日本材料学会半導体エレクトロニクス部門委員会, オンライン開催, JapanドープされたInAs/GaAs量子ドットにおける局在表面プラズモン共鳴による電場増強効果
- 2022年度 第3回半導体エレクトロニクス部門委員会 第2回研究会、2022年度第1回ナノ材料部門委員会第1回研究会, Nov. 2022, Japanese, 京都大学, Japan量子ドットを内包する半導体ヘテロナノ構造を利用した量子型赤外光検出素子の暗電流制御
- 33rd International Photovoltaic Science and Engineering Conference(PVSEC-33), English, Nagoya, International conferenceBroadband Enhancement of Intraband Transition in Two-Step Photon Up-Conversion Solar Cells with a Doubled-Heterointerface Strucure
- 第41回電子材料シンポジウム(EMS41), Oct. 2022, EnglishThermal Activation Process at the Heterointerface in Photon Up-Conversion Solar Cells Using hole Up-Conversion
- 第41回電子材料シンポジウム(EMS41), Oct. 2022, EnglishIntraband Transition in Two-Step Photon Up-Conversion Solar Cells
- 8th World Conference on Photovoltaic Energy Conversion(WCPEC-8), English, International conferenceHigh Absorptivity of Intraband Transition Occurring at Heterointerface in Two-Step Photon Up-Conversion Solar Cells
- 第83回応用物理学会秋季学術講演会, Japaneseダブルパルス-ポンプ-プローブ法によるGaAs/AlAs 多重量子井戸における超高速応答の評価
- 第83回応用物理学会秋季学術講演会, English, 東北大学&オンライン, Japan, Domestic conferenceElectrical Properties of AlGaAs/GaAs-Based Two-Step Photon Up-Conversion Solar Cells with Doubled Heterointerfaces
- 日本物理学会2022年秋季大会物性分野, Japanese“GaSb/AlGaSb多重量子井戸における障壁層励起による差周波混合過程に対する井戸幅依存性
- 9th International Symposium on Control of Semiconductor Interfaces(ISCSI-IX), English, International conferencePhotoluminescence Characteristics of InAs Quantum Dots in the Doubled-heterointerface of AlGaAs/GaAs-based Two-step Photon Up-conversion Solar Cells
- International Conference on the Physics of Semiconductors(ICPS 2022), Sydney, International conferenceDifferece on Infrared-Induced Response Between N-i-p and P-i-n Structures of Two-Step Photon Up-Conversion Solre Cells
- International Conference on the Physics of Semiconductors(ICPS 2022), English, Sydney, International conferenceIntraband Absorptivity in Two-Step Photon Up-Conversion Solar CellsOral presentation
- 第69回応用物理学会春季学術講演会, Mar. 2022, Japanese正孔フォトンアップコンバージョン太陽電池の赤外光照射による光電流制御
- 第69回応用物理学会春季学術講演会, Mar. 2022, Japanese2段階フォトンアップコンバージョン太陽電池における ヘテロ界面のバンド内遷移の光吸収率
- (14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 15th International Conference on Plasma-Nano Technology & Science (ISPlasma2022 / IC-PLANTS2022),, English, Nagoya, Japan, International conferenceControl of Quantum-Dot Growth for Novel Solar Cells[Invited]Invited oral presentation
- 令和3年度 応用物理学会 多元系化合物・太陽電池研究会 年末講演会, Dec. 2021, Japanese太陽電池のエネルギー変換効率と高効率化への道[Invited]
- 第82回応用物理学会秋季学術講演会, JapaneseGaSb/AlGaSb多重量子井戸における障壁層励起での差周波混合法によるテラヘルツ電磁波発生
- 第82回応用物理学会秋季学術講演会, Japanese正孔のアップコンバージョンを利用した2段階フォトンアップコンバージョン太陽電池のバンド内遷移過程
- 第82回応用物理学会秋季学術講演会, EnglishOn the Simulation of Two-Step Photocurrent Generation in an InAs Quantum Dot -in-Well Intermediate Band Solar Cell
- 第82回応用物理学会秋季学術講演会, Japaneseエピタキシャル成長を利用した固体レーザー冷却用高品質Yb:Y-Al-O厚膜の作製
- 2021 International Conference on Solid State Devices, Sep. 2021, EnglishControl of Carrier Dynamics in Quantum Dots for Intermediate-Band Solar Cells[Invited]Invited oral presentation
- 8th International Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2021), English, International conferenceTwo-step up-conversion solar cells: recent progress and future direction[Invited]Invited oral presentation
- 48th IEEE Photovoltaic Specialists Conference, English, Miami, International conferenceCollection of Photocarriers Varied by Effective Electron Intraband Excitation in an InAs Quantum Dot-in-Well Intermediate Band Solar Cell
- Compund Semiconductor Week(CSW)2021, English, Stockholm, International conferenceLateral Photoconductivity of Multiple-Stacked InAs/GaAs Quantum Dot Structure for Photoconductive Antenna Device
- 第68回応用物理学会春季学術講演会, Mar. 2021, Japanese, オンライン開催, Domestic conferenceGaAs/AlAs多重量子井戸における差周波混合によるテラヘルツ電磁波発生の周波数依存性に対する励起子効果Oral presentation
- 第68回応用物理学会春季学術講演会, Mar. 2021, Japanese, オンライン開催, Domestic conference光伝導アンテナ応用へ向けた多重積層InAs/GaAs量子ドットの光学特性評価Oral presentation
- 第68回応用物理学会春季学術講演会, Mar. 2021, Japanese, オンライン開催, Domestic conference相分離したYb添加Y-Al-O透明薄膜における結晶相間エネルギー移動Oral presentation
- 第68回応用物理学会春季学術講演会, Mar. 2021, EnglishEfficiency Compensation from Intraband Transitions of Opposite Carrier in a Quantum Dot-In-Well Intermediate Band Solar CellOral presentation
- 第68回応用物理学会春季学術講演会, Mar. 2021, Japanese, オンライン開催, Domestic conference変調ドープした二段階フォトンアップコンバージョン太陽電池における電圧上昇効果Oral presentation
- SPIE Photonics West, EnglishLaser Cooling Efficiency of Yb-doped Yttrium Aluminum Oxide Crystals[Invited]Invited oral presentation
- SPIE Photonics West, EnglishYb-doped Yttrium Aluminum Perovskite for Radiation Balanced Laser Application[Invited]Invited oral presentation
- 応用物理学会関西支部 2020年度第1回+第2回合同講演会, Japanese, オンライン講演ウイルスと戦えるこれからの紫外光源[Invited]Invited oral presentation
- 第31回光物性研究会(2020), Dec. 2020, Japanese, オンライン開催(Zoom), Domestic conferenceGaAs/AlAs多重量子井戸間の励起子共鳴を利用した差周波混合によるテラヘルツ電磁波の増強Oral presentation
- 第39回電子材料シンポジウム(EMS39), Oct. 2020, English, オンライン開催Development of Mid-Infrared Photodetector Can Operate Under Room Temperature with High Sensitivity Using Intraband Transition
- 第39回電子材料シンポジウム(EMS39), Oct. 2020, English, オンライン開催, Domestic conferenceAnti-Stokes Photoluminescence Caused by Energy Transfer in Ytterbium-Doped Yttrium Aluminum perovskite
- 第39回電子材料シンポジウム(EMS39), Oct. 2020, English, オンライン開催, Domestic conferencePerformance Analysis of an InAs/GaAs/Al0.3Ga0.7As Quantum Dot-in-Well Intermediate Band Solar Cell Under Two-Step Photoexcitations
- 第39回電子材料シンポジウム(EMS39), Oct. 2020, English, オンライン開催, Domestic conferenceDramatic Enhancement of Current and Voltage in Modulation-Doped Two-Step Photon Up-Conversion Solar Cells
- 第81回応用物理学会春季学術講演会, Sep. 2020, Japanese, オンライン開催, Domestic conference正孔のアップコンバージョンを利用した2段階フォトンアップコンバージョン太陽電池の追加赤外光による光電流減少メカニズムOral presentation
- 第81回応用物理学会春季学術講演会, Sep. 2020, Japanese, オンライン開催, Domestic conferencePerformance Degradation of Quantum Dot-in-Well Intermediate Band Solar Cell Under Intense Bi-Color Barrier and Intraband PhotoexcitationsOral presentation
- 第81回応用物理学会春季学術講演会, Sep. 2020, Japanese, オンライン開催, Domestic conference反射率変化で観測するGaAs/AlAs多重量子における重い正孔-軽い正孔励起子間相互作用に対する励起子の安定性の効果Oral presentation
- 第81回応用物理学会秋季学術講演会, Japanese, オンライン開催, Domestic conference変調ドープした二段階フォトンアップコンバージョン太陽電池における光励起効率の向上Oral presentation
- 日本材料学会半導体エレクトロニクス部門委員会, Aug. 2020, Japanese, オンライン開催, Domestic conference変調ドープによるフォトンアップコンバージョン太陽電池の特性制御
- 47th IEEE Photovoltaic Specialists Conference, English, CalgaryUp-Converted Photocurrent Enhancement in Modulation-Doped Two-Step Photon Up-Conversion Solar CellsOral presentation
- 47th IEEE Photovoltaic Specialists Conference, English, Calgary, International conferenceIntensive-Light-Induced Backtracking Voltage Phenomenon: An Insight into Intermediate-Band Solar Cell Output PerformanceOral presentation
- 第67回応用物理学会春季学術講演会, 新型コロナウイルス感染拡大防止のため中止。 講演予稿集発行されたので、本講演会での発表は成立するものとする (第67回応用物理学会春季学術講演会HPより抜粋)変調ドープした二段階フォトンアップコンバージョン太陽電池におけるアップコンバージョン電流増大
- 第67回応用物理学会春季学術講演会, 新型コロナウイルス感染拡大防止のため中止。 講演予稿集発行されたので、本講演会での発表は成立するものとする (第67回応用物理学会春季学術講演会HPより抜粋)GaAs/AlAs多重量子井戸における差周波混合によるテラヘルツ電磁波発生に対する励起子の重ね合わせ効果
- 第67回応用物理学会春季学術講演会, 新型コロナウイルス感染拡大防止のため中止。 講演予稿集発行されたので、本講演会での発表は成立するものとする (第67回応用物理学会春季学術講演会HPより抜粋)Yb添加YAG-YAM共晶透明薄膜におけるAnti-Stokes PL過程と理想レーザー冷却効率
- 第67回応用物理学会春季学術講演会, 新型コロナウイルス感染拡大防止のため中止。 講演予稿集発行されたので、本講演会での発表は成立するものとする (第67回応用物理学会春季学術講演会HPより抜粋)Voltage Backtracking Behavior in Intermediate-Band Solar Cell under Intensive Bi/Uni-Color Photoexcitation Examination
- 第67回応用物理学会春季学術講演会, 新型コロナウイルス感染拡大防止のため中止。 講演予稿集発行されたので、本講演会での発表は成立するものとする (第67回応用物理学会春季学術講演会HPより抜粋)InAs量子ドットとAl0.3Ga0.7As/GaAsヘテロ界面を利用した赤外線検出器の受光感度特性
- 第67回応用物理学会春季学術講演会, 新型コロナウイルス感染拡大防止のため中止。 講演予稿集発行されたので、本講演会での発表は成立するものとする (第67回応用物理学会春季学術講演会HPより抜粋)2段階フォトンアップコンバージョン太陽電池におけるバンド内遷移特性
- 第67回応用物理学会春季学術講演会, 新型コロナウイルス感染拡大防止のため中止。 講演予稿集発行されたので、本講演会での発表は成立するものとする (第67回応用物理学会春季学術講演会HPより抜粋)GaAs/AlAs多重量子井戸における連続波励起子共鳴励起による変調効果
- 第67回応用物理学会春季学術講演会, 新型コロナウイルス感染拡大防止のため中止。 講演予稿集発行されたので、本講演会での発表は成立するものとする (第67回応用物理学会春季学術講演会HPより抜粋)多重積層InAs/GaAs量子ドットを用いた光伝導アンテナの作製
- SPIE Photonics West, English, San Francisco, International conferenceEnhancement of laser cooling efficiency in rare-earth-doped oxide at elevated high temperature[Invited]Invited oral presentation
- 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, English, Kobe, JapanControl of Exciton Interference in GaAs/AlAs Multiple Quantum WellsOral presentation
- 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, English, Kobe, Japan, International conferenceExcitation Energy Dependence of Hot-Carrier Extraction Process in InAs/GaAs Quantum Dot Superlattice Solar CellsOral presentation
- 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, English, Kobe, Japan, International conferencePolarization-Insensitive Optical Gain of Highly stacked InAs/GaAs Quantum Dot Semiconductor Optical AmplifierOral presentation
- 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, English, Kobe, Japan, International conferenceEffect of the accumulated Electron Density at the Hetero-Interface in Two-Step Photon-Up Conversion Solar CellsOral presentation
- 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, English, Kobe, JapanLaser Cooling Utilizing Anti-Stokes Photoluminescence in Yb-Doped Yttrium Aluminum GarnetOral presentation
- 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, English, Kobe, Japan, International conferenceExtensively-Prolonged Electron Lifetime Within Room Temperature Upon InAs/GaAs Quantum Dot-in-Well Solar CellOral presentation
- 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, English, Kobe, Japan, International conferenceInfrared Photodetector Sensitized by QDs Inserted at the Hetero-InterfaceOral presentation
- 46th IEEE Photovoltaic Specialists Conference, Jul. 2019, English, Chicago, International conferenceStrong Voltage-Boost Effect in Two-Step Photon-Up Conversion Solar CellsOral presentation
- 46th IEEE Photovoltaic Specialists Conference, Jul. 2019, English, Chicago, International conferenceHot-Carrier Extraction in InAs/GaAs Quantum Dot Superlattice Solar CellsOral presentation
- 46th IEEE Photovoltaic Specialists Conference, Jun. 2019, English, Chicago, International conferenceReciprocal Relationship Between Photoluminescence and Photocurrent in Two-Step Photon Up-Conversion Solar CellOral presentation
- Compound Semiconductor Week2019, May 2019, English, Nara, International conferenceOne-Dimensional Electronic States in Highly-Stacked InAs/GaAs Quantum Dot SuperlatticesOral presentation
- Compound Semiconductor Week 2019, May 2019, English, Nara, Japan, International conferenceExtension of excitation energy to generate terahertz wave to smaller than GaAs bandgap energy due to growth of InAs quantum dots and nitrogen doped layerOral presentation
- Optics&Photonics International Congress 2019, Apr. 2019, English, Yokohama, International conferenceEfficient Hot-Carrier Generation in InAs/GaAs Quantum Dot SuperlatticesOral presentation
- 第66回応用物理学会春季学術講演会, Mar. 2019, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子を用いたホットキャリア型太陽電池における開放電圧の向上Oral presentation
- 2019年第66回応用物理学会春季学術講演会, Mar. 2019, Japanese, 東京工業大学, Domestic conferenceGaAs/AlAs多重量子井戸の励起子ダイナミクスと二次の非線形光学効果との関係Oral presentation
- 第66回応用物理学会春季学術講演会, Mar. 2019, Japanese, Domestic conference(Y:Yb)AGにおける高温でのanti-Stokes発光増強Oral presentation
- 第37回電子材料シンポジウム, Oct. 2018, Japanese, Domestic conferenceVoltage boost effect in two-step photon up-conversion solar cell with partial absorptivityPoster presentation
- 第37回電子材料シンポジウム, Oct. 2018, Japanese, Domestic conferenceLaser Cooling in Yb-Doped Yttrium Aluminum CompoundsPoster presentation
- 20th International Conference on Molecular Beam Epitaxy, Sep. 2018, English, China, International conference“Effects of GaAs-Capping Temperature on The Emission Wavelength of InAs Quantum Dots Grown on Nitrogen-Doped GaAs(001)SurfacesOral presentation
- 35th European PV Solar Energy Conference and Exhibition, Sep. 2018, English, Belgium, International conferenceOptimal Band Gap Energies for Two-Step Photon Up-Conversion Solar Cells with Partial AbsorptivityOral presentation
- 第79回応用物理学会秋季学術講演会, Sep. 2018, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子太陽電池におけるホットキャリア電流取り出し特性Oral presentation
- 第79回応用物理学会秋季学術講演会, Sep. 2018, Japanese, 名古屋国際会議場, Domestic conferenceGaAs/AlAs多重量子井戸における第二次高調波発生Oral presentation
- 第79回応用物理学会秋季学術講演会, Sep. 2018, Japanese, Domestic conference2段階フォトンアップコンバージョン太陽電池における理論変換効率の入射光スペクトル形状依存性Oral presentation
- 平成30年度半導体エレクトロニクス部門委員会第1回研究会, Jul. 2018, Japanese, 奈良先端科学技術大学院大学, Domestic conference多孔質炭素電極を用いた光化学電池の基礎特性Oral presentation
- 平成30年度半導体エレクトロニクス部門委員会第1回研究会, Jul. 2018, Japanese, 奈良先端科学技術大学院大学, Domestic conferenceYb添加Fttrium-Aluminum化合物によるもの固体レーザー冷却Oral presentation
- The 12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials, Jul. 2018, English, Nara, International conferenceOptimization of Excitation Wavelengh in YAG:Yb for Laser coolingOral presentation
- The 12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials, Jul. 2018, English, Nara, International conferenceObservation of electron transport in a silicon crystal using luminescence of cyanine molecule excited by energy transferOral presentation
- 9th International Workshop on Bismuth-Containing Semiconductors, Jul. 2018, English, Kyoto, International conferenceExciton Hopping Dynamics in GaAsBiOral presentation
- The 12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials, Jul. 2018, English, Nara, International conferenceEffects of Modulation of Ultrafast Transient Carrier Dynamics by Interface on Terahertz SignalOral presentation
- 31st International Vacuum Nanoelectronics Conference, Jul. 2018, English, Kyoto, International conferenceDevelopment of Mercury-Free Ultraviolet Light Emitting Devices[Invited]Invited oral presentation
- 18th International Conference on Laser Optics, Jun. 2018, English, St.Petersburg, Russia, International conferenceGeneration of continuous terahertz wave with wide tunable range[Invited]Invited oral presentation
- The 7th edition of the World Conference on Photovoltaic Energy Conversion, Jun. 2018, English, Hawaii, International conferenceCarrier Collection Efficiency of Intraband-Excited Carriers in Two-Step Photon Up-Conversion Solar CellsOral presentation
- 応用物理学会関西支部平成30年度第1回講演会, May 2018, Japanese, 神戸大学, Domestic conference入射光スペクトル形状を考慮した2段階フォトンアップコンバージョン太陽電池の理論変換効率Poster presentation
- Compound Semiconductor Week 2018, May 2018, English, Cambridge, MA, USA, International conferenceMultiple Stacking of Capping Temperature-Controlled InAs/GaAs Quantum Dots with AlGaAs Barrier Layers for Broadband EmissionOral presentation
- 応用物理学会関西支部平成30年度第1回講演会, May 2018, Japanese, 神戸大学, Domestic conferenceGaAs/AlAs多重量子井戸における重い正孔励起子励起下での差周波混合によるテラヘルツ電磁波の偏光特性Poster presentation
- International Conference on Nanophotonics and Nano-optoelectronics 2018, Apr. 2018, English, Yokohama, International conferencePolarization Dependent Photocurrent in InAs/GaAs Quantum Dot Superlattice Solar CellsOral presentation
- International Conference on Nanophotonics and Nano-optoelectronics 2018, Apr. 2018, English, Yokohama, International conferenceOne-Dimensional Electronic States in Closely Stacked InAs/GaAs Quantum Dots with Different Growth TemperaturesOral presentation
- International Conference on Nanophotonics and Nano-optoelectronics 2018, Apr. 2018, English, Yokohama, International conferenceExtraction Efficiency of Up-Converted Electrons in Two-Step Photon Up-Conversion Solar CellsOral presentation
- 第65回応用物理学会春季学術講演会, Mar. 2018, Japanese, Domestic conference吸収率を考慮した2段階フォトンアップコンバージョン太陽電池の理論変換効率Oral presentation
- 日本物第65回応用物理学会春季学術講演会理学会 第72回年次大会, Mar. 2018, Japanese, 早稲田大学, Domestic conferenceエネルギー移動を利用したSi基板内部における電子拡散過程の観測Oral presentation
- 第65回応用物理学会春季学術講演会, Mar. 2018, Japanese, Domestic conferenceYAG:Ybにおけるanti-Stokes発光の励起波長依存性Oral presentation
- 第65回応用物理学会春季学術講演会, Mar. 2018, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子を用いたホットキャリア型太陽電池動作実証Oral presentation
- 日本物第65回応用物理学会春季学術講演会理学会 第72回年次大会, Mar. 2018, Japanese, 早稲田大学, Domestic conferenceGaAs/AlAs多重量子井戸端面から放射されるテラヘルツ電磁波の偏光特性Oral presentation
- 応用物理学会関西支部平成29年度第3回講演会, Feb. 2018, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子を用いたホットキャリア型太陽電池の動作評価Poster presentation
- SPIE Photonics West, Jan. 2018, English, San Francisco, International conferenceTwo-Step Photon Up-Conversion Solar Cell: Propose and Demonstration[Invited]Invited oral presentation
- 第28回光物性研究会, Dec. 2017, Japanese, Domestic conferenceYAG:YbにおけるAnti-Stokes発光Poster presentation
- MTSA2017-OptoX Nano-TeraNano8, Nov. 2017, English, Okayama, International conferenceTwo-Step Photon Up-Conversion Solar CellOral presentation
- The 27th Photovoltaic Science and Engineering Conference, Nov. 2017, English, Otsu, International conferenceTwo-Step Photo-Excitated Electrons with Extremely-Long Lifetime in Intermedeate-band Solar Cells Using Dot-in Well StrucyureOral presentation
- The 27th Photovoltaic Science and Engineering Conference, Nov. 2017, English, Otsu, International conferenceTwo-Step Photn Up-Conversion Solar Cells Incorporating a Voltage Booster Hetero-InterfaceOral presentation
- The 27th Photovoltaic Science and Engineering Conference, Nov. 2017, English, Otsu, International conferenceInfrared Absorption Characteristics in Two-Step Photon Up-Conversion Solar CellsOral presentation
- The 27th Photovoltaic Science and Engineering Conference, Nov. 2017, English, Otsu, International conferenceEfficient Two-Step Photocurrent in Intermediate Band Solar Cells Using Highly Homogeneous InAs/GaAs Quantum-Dot SuperlatticeOral presentation
- 第36回電子材料シンポジウム, Nov. 2017, Japanese, Domestic conferenceAnti-Stokes photoluminescence in Yb-doped yttrium aluminum garnetPoster presentation
- International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth -Material Research, Characterization and Imaging by In situ/Operando XAFS and X-ray Techniques-, Oct. 2017, English, Tokyo, International conferenceOne-Dimensional Miniband Formation in InAs/GaAs Quantum Dot SuperlatticeOral presentation
- International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth -Material Research, Characterization and Imaging by In situ/Operando XAFS and X-ray Techniques-, Oct. 2017, English, Tokyo, International conferenceLaser-induced Hydrogen Production Using Porous CarbonOral presentation
- 第78回応用物理学会秋季学術講演会, Sep. 2017, Japanese, Domestic conference低温キャップInAs/GaAs量子ドット超格子中間バンド型太陽電池における熱脱出の抑制Oral presentation
- 日本材料学会半導体エレクトロニクス部門委員会平成29年度第1回研究会, Sep. 2017, Japanese, Domestic conference低温キャップInAs/GaAs量子ドット超格子中間バンド型太陽電池における2段階光吸収の増強Oral presentation
- 33rd European Photovoltaic Solar Energy Conference and Exhibition, Sep. 2017, English, Netherlands, International conferencePhoton Up-Converted Photocurrent in a Single Junction Solar Cell with a Hetero-InterfaceOral presentation
- 33rd European Photovoltaic Solar Energy Conference and Exhibition, Sep. 2017, English, Netherlands, International conferenceIncreasing Photovoltage Boosted by Photon Up-Conversion in a Single-Junction Solar Cell with a Hetero-InterfaceOral presentation
- 第78回応用物理学会秋季学術講演会, Sep. 2017, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子太陽電池におけるバンド内遷移の偏光特性Oral presentation
- Nanophotonics and Micro/Nano Optics International Conference 2017, Sep. 2017, English, Barcelona, Spain, International conferenceGeneration of continuous terahertz wave by differential-frequency-mixing in a GaAs/AlAs multiple quantum wellOral presentation
- 33rd European Photovoltaic Solar Energy Conference and Exhibition, Sep. 2017, English, Netherlands, International conferenceExtended Optical Response of Two-Step Photoexcitation in InAs/GaAs Quantum-Dot Superlattice Intermediate Band Solar CellsOral presentation
- SemiconNano 2017: 6th International Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, Sep. 2017, English, Milano, International conferenceCarrier Dynamics in Photon Up-Conversion Solar CellsOral presentation
- 29th International Conference on Defects in Semiconductors, Jul. 2017, English, Matsue, International conferenceStokes and Anti-Stokes Photoluminescence in Nitrogen ð-Doped Layer in GaAsOral presentation
- 2017 IEEE Photovoltaic Specialists Conference, Jun. 2017, English, Washington D.C., International conferenceIncreasing Current Generation by Photon Up-Conversion in a Single-Junction Solar Cell with a Hetero-InterfaceOral presentation
- 応用物理学会関西支部平成29年度第1回講演会, May 2017, Japanese, Domestic conferenceレーザー冷却に向けたYbドープ酸化物の作製Poster presentation
- Compound Semiconductor Week 2017, May 2017, English, Berlin, International conferenceBroadband Control of Polarization Characteristics in Closely-Stacked InAs/GaAs Quantum DotsOral presentation
- 2017 MRS Spring Meeting and Exhibit, Apr. 2017, English, Arizona, International conferenceControl of Carrier Dynamics and Efficient Two-Step Photon Up-Conversion in Quantum-Dot Intermediate-Band Solar Cells[Invited]Invited oral presentation
- 第64回応用物理学会春季学術講演会, Mar. 2017, Japanese, パシフィコ横浜, Domestic conferenceInAs量子ドット周辺の歪み制御によるGaAs表面からのテラヘルツ電磁波発生波長の長波長化Oral presentation
- 第64回応用物理学会春季学術講演会, Mar. 2017, Japanese, Domestic conferenceGaAs中のエピタキシャル窒素膜における反ストークス発光Oral presentation
- 日本物理学会 第72回年次大会, Mar. 2017, Japanese, 大阪大学, Domestic conferenceGaAs/AlAs多重量子井戸における波形制御パルスによる量子ビート生成IIIOral presentation
- 日本物理学会 第72回年次大会, Mar. 2017, Japanese, 大阪大学, Domestic conferenceEffects of exciton oscillator strength on terahertz generation due to differential-wave-mixing in GaAs/AlAs multiple quantum wellsOral presentation
- 第27回光物性研究会, Dec. 2016, Japanese, 神戸大学, Domestic conferenceSi基板からシアニン分子薄膜へのエネルギー移動による発光に対するキャリア拡散の効果Poster presentation
- 第27回光物性研究会, Dec. 2016, Japanese, Domestic conferenceGaAs中のデルタドーピング窒化層を利用した光によるフォノン制御Poster presentation
- 第27回光物性研究会, Dec. 2016, Japanese, 神戸大学, Domestic conferenceGaAs/AlAs多重量子井戸における励起子励起条件下での差周波混合によるテラヘルツ電磁波の高効率発生Poster presentation
- Asian Conference on Nanoscience and Nanotechnology 2016, Oct. 2016, English, Sapporo, International conferenceVariation of Terahertz Wave Characteristics Due to Covering InAs Quantum Dots by Nitrogen AtomsOral presentation
- Asian Conference on Nanoscience and Nanotechnology 2016, Oct. 2016, English, Sapporo, International conferencePhoto-Emission of Cyanine Molecule Thin Films on Si Substrate Due to Inorganic-Organic Energy TransferOral presentation
- 第77回応用物理学会秋季学術講演会, Sep. 2016, Japanese, 朱鷺メッセ, Domestic conferenceObservation of strain variation due to quantum dots by terahertz wave emissionOral presentation
- Energy, Materials, and Nanotechnology Meeting on Epitaxy, Sep. 2016, English, International conferenceTwo-dimensional delocalized electronic states of epitaxial N d-doped layer in GaAs[Invited]Invited oral presentation
- HEMP 2016: Hot Electrons and Solar Energy, Sep. 2016, English, International conferenceNanosecond-scale hot-carrier cooling dynamics in one-dimensional InAs/GaAs quantum dot superlattices[Invited]Invited oral presentation
- 第77回応用物理学会秋季学術講演会, Sep. 2016, Japanese, Domestic conferenceInAs/GaAs量子ドット中間バンド型太陽電池における電子の熱脱出過程の解明Oral presentation
- 19th International Conference on Molecular-Beam Epitaxy, Sep. 2016, English, Montpellier, International conferenceControl In-Ga Intermixing in InAs Quantum Dot on Nitrogen δ-Doped GaAsOral presentation
- HEMP 2016: Hot Electrons and Solar Energy, Sep. 2016, English, London, International conferenceCarrier Dynamics in InAs Quantum Dot Solar Cell for Photon Ratchet[Invited]Invited oral presentation
- 33rd International Conference on the Physics of Semiconductors, Aug. 2016, English, Beijing, International conferenceSpatial Electronic Structure of an Isovalent Nitrogen Center in GaAsOral presentation
- 第35回電子材料シンポジウム, Jul. 2016, Japanese, Domestic conferenceThermal carrier-escape process from the intermediate band in InAs/GaAs quantum dot solar cellsPoster presentation
- UK Semiconductors 2016, Jul. 2016, English, Sheffield, International conferencePolarization-Insensitive Intraband Transition in InAs/GaAs Quantum Dot SuperlatticesOral presentation
- 2016 Compound Semiconductor Week, Jun. 2016, English, Toyama, International conferenceTwo-Dimensional Energy Dispersion in Thermally Annealed Epitaxial Nitrogen Atomic Sheet in GaAsOral presentation
- 2016 Compound Semiconductor Week, Jun. 2016, English, Toyama, International conferencePolarization Anisotropy of Electroluminescence and Net-Modal Gain in Highly Stacked InAs/GaAs Quantum-Dot Laser DevicesOral presentation
- 2016 Compound Semiconductor Week, Jun. 2016, English, Toyama, International conferenceGaAs First-Spacer-Layer Thickness Dependence of Polarized Photoluminescence Properties of Closely-Stacked InAs/GaAs Quantum Dots with Long-Wavelength EmissionOral presentation
- 32nd European Photovoltaic Solar Energy Conference and Exhibition, Jun. 2016, English, Munich, International conferenceExtended Electron Lifetime in Intermediate-Band Solar Cells Using Dot-in-Well StructureOral presentation
- 32nd European Photovoltaic Solar Energy Conference and Exhibition, Jun. 2016, English, Munich, International conferenceEnhancement of Two-Step Photon Absorption Due to Miniband Formation in InAs/GaAs Quantum Dot Superlattice Solar CellOral presentation
- 第63回応用物理学会春季学術講演会, Mar. 2016, Japanese, Domestic conference急速熱アニールしたGaAs中のエピタキシャル窒素膜の輻射再結合寿命Oral presentation
- 17th International Conference on Physics of Light-Matter Coupling in Nanostructures, Mar. 2016, English, Nara, International conferenceTime-Resolved Photoluminescence of Thermally-Annealed Nitrogen Atomic Sheet in GaAsOral presentation
- 17th International Conference on Physics of Light-Matter Coupling in Nanostructures, Mar. 2016, English, Nara, International conferencePolarized Photoluminescence Properties of Closely-Stacked InAs/GaAs Quantum Dots with Long-Wavelength EmissionOral presentation
- 第63回応用物理学会春季学術講演会, Mar. 2016, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子太陽電池におけるミニバンド形成が2段階光吸収に与える影響Oral presentation
- 17th International Conference on Physics of Light-Matter Coupling in Nanostructures, Mar. 2016, English, Nara, International conferenceExtremely Long Carrier Lifetime Due to Electron-Hole Separation in Quantum-Dot Intermediate-Band Solar CellsOral presentation
- SPIE Photonics West, Feb. 2016, English, San Francisco, International conferenceEffective Drift Mobility Approximation in Multiple Quantum-Well Solar CellsOral presentation
- 日本材料学会半導体エレクトロニクス部門委員会平成27年度第1回研究会, Nov. 2015, Japanese, Domestic conferenceポリマー薄膜中のコロイドPbS量子ドットにおけるパリティ選択則の緩和Oral presentation
- 2nd International Conference on Enhanced Spectroscopies, Oct. 2015, English, Messina, International conferenceDecrease in Photoluminescence Decay Rate in InAs Quantum Dots Coupling with In Nanoparticles Due to Increase in Excitation PowerOral presentation
- 日本物理学会2015年秋季大会, Sep. 2015, Japanese, Domestic conferenceポリマー膜中のPbSコロイド量子ドットにおける磁気光学応答のヒステリシス特性Poster presentation
- EU PVSEC 2015, Sep. 2015, English, Hamburg, International conferenceNGCPV: a New Generation of Concentrator Photovoltaic Cells, Modules and Systems (a Final Review)Oral presentation
- 第76回応用物理学会秋季学術講演会, Sep. 2015, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子を利用したホットキャリア型太陽電池Oral presentation
- 第76回応用物理学会秋季学術講演会, Sep. 2015, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子におけるホットキャリア冷却過程Oral presentation
- 5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, Sep. 2015, English, Taiwan, International conferenceGrowth and Characterization of InAs/GaAs Quantum Dot Superlattices for Photovoltaics[Invited]Invited oral presentation
- 5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, Sep. 2015, English, Taiwan, International conferenceEpitaxial Nitrogen Atomic Sheet in GaAs Grown by Nitorogen δ-Doping Technique[Invited]Invited oral presentation
- High-efficiency materials for photovoltaics, Sep. 2015, English, London, International conferenceCarrier Dynamics in InA s /GaAs Quantum Dot Superlattices for Photovoltaics[Invited]Invited oral presentation
- 日本材料学会半導体エレクトロニクス部門委員会平成27年度第1回研究会, Jul. 2015, Japanese, Domestic conference急速熱アニールによるGaAs中のエピタキシャル窒素シートにおける2次元物性の制御Oral presentation
- 21st International Conference on Electronic Properties of Two-Dimensional Systems/17th International Conference on Modulated Semiconductor Structures, Jul. 2015, English, Sendai, International conferenceRelaxation of Parity Selection Rules in Colloidal PbS Quantum Dots Embedded in Polymer FilmsOral presentation
- 34th Electronic Materials Symposium, Jul. 2015, Japanese, Domestic conferenceHot-Carrier Distribution in InAs/GaAs Quantum Dot Superlattices and Its Application to Solar CellsPoster presentation
- 21st International Conference on Electronic Properties of Two-Dimensional Systems/17th International Conference on Modulated Semiconductor Structures, Jul. 2015, English, Sendai, International conferenceExciation of Cyanine Dye Thin Film Via Energy Transfer from a Si SubstrateOral presentation
- 21st International Conference on Electronic Properties of Two-Dimensional Systems/17th International Conference on Modulated Semiconductor Structures, Jul. 2015, English, Sendai, International conferenceEnhancement of Two Dimensionality in Epitaxial Nitrogen Atomic Sheet in GaAs by Rapid Thermal AnnealingOral presentation
- 21st International Conference on Electronic Properties of Two-Dimensional Systems/17th International Conference on Modulated Semiconductor Structures, Jul. 2015, English, Sendai, International conferenceEffects of Homogeneous and Inhomogeneous Broadenings of Excitons on Amplitude of Exciton Quantum BeatsOral presentation
- 21st International Conference on Electronic Properties of Two-Dimensional Systems/17th International Conference on Modulated Semiconductor Structures, Jul. 2015, English, Sendai, International conferenceBroadband Control of Emission Wavelength of InAs/GaAs Quantum Dots by Growth Temperature GaAs Capping LayerOral presentation
- 34th Electronic Materials Symposium, Jul. 2015, Japanese, Domestic conferenceAnnealing effects on the delocalized electronic states of epitaxial two-dimensional nitrogen atomic sheet in GaAsPoster presentation
- 42nd IEEE Photovoltaic Specialists Conference, Jun. 2015, English, New Orleans, International conferenceUltrafast Photocarrier Transport Dynamics in InAs/GaAs Quantum Dot Superlattice Solar CellOral presentation
- 42nd IEEE Photovoltaic Specialists Conference, Jun. 2015, English, New Orleans, International conferenceTwo-Step Photocarrier Generation in InAs/GaAs Quantum Dot Superlattice Intermediate Band Solar CellOral presentation
- 42nd IEEE Photovoltaic Specialists Conference, Jun. 2015, English, New Orleans, International conferenceTime-Resolved Photoluminescence of MBE-Grown leV GaAsSbN for Multi-Junction Solar CellsOral presentation
- 42nd IEEE Photovoltaic Specialists Conference, Jun. 2015, English, New Orleans, International conferenceSaturable Two-Step Photocurrent Generation in Intermediate-Band Solar Cells Including InAs Quantum Dots Embedded in Al0.3Ga0.7As/GaAs Quantum WellsOral presentation
- 42nd IEEE Photovoltaic Specialists Conference, Jun. 2015, English, New Orleans, International conferenceComparison of Electron and Hole Mobilities in Multiple Quantum Well Solar Cells Using a Time-of-Flight TechniqueOral presentation
- 11th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials, Montreal, May 2015, English, Montreal, International conferenceHot-Carrier Cooling Dynamics in InAs/GaAs Quantum Dot SuperlatticesOral presentation
- 第75回応用物理学会秋季学術講演会, Mar. 2015, Japanese, 東海大学, Domestic conference半導体量子井戸における励起子量子ビートのポンプ光エネルギー依存性Oral presentation
- 第62回応用物理学会春季学術講演会, Mar. 2015, Japanese, Domestic conferenceポリマー薄膜中のコロイドPbS量子ドットにおける励起緩和過程の偏光異方性Oral presentation
- 第75回応用物理学会秋季学術講演会, Mar. 2015, Japanese, 東海大学, Domestic conferenceシアニン色素薄膜におけるエネルギー移動による励起子緩和時間の制御Oral presentation
- 日本物理学会第70回年次大会(2015年), Mar. 2015, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子におけるホットキャリアダイナミクスOral presentation
- 第62回応用物理学会春季学術講演会, Mar. 2015, Japanese, Domestic conferenceGaAs中のエピタキシャル二次元窒素膜におけるアニール効果Oral presentation
- 第24回光物性研究会, Dec. 2014, Japanese, Domestic conferenceポリマー薄膜中のコロイドPbS量子ドットにおける励起緩和過程の偏光異方性Poster presentation
- 第25回光物性研究会, Dec. 2014, Japanese, 神戸大学, Domestic conferenceLayer-by-Layer法によるシアニン色素積層薄膜の作製と励起子緩和特性の評価Oral presentation
- 第24回光物性研究会, Dec. 2014, Japanese, Domestic conferenceInAs/GaAs量子ドット太陽電池におけるキャリア脱出の影響Poster presentation
- 第24回光物性研究会, Dec. 2014, Japanese, Domestic conferenceGaAs中のエピタキシャル2次元窒素シート非局在電子状態の発光ダイナミクスPoster presentation
- 第25回光物性研究会, Dec. 2014, Japanese, 神戸大学, Domestic conferenceGaAs/AlAs多重量子井戸におけるダブルパルス法による励起子量子ビート制御Oral presentation
- 日本材料学会半導体エレクトロニクス部門委員会平成26年度第2回研究会, Nov. 2014, Japanese, Domestic conference低次元量子構造を利用したホットキャリア型太陽電池の提案Oral presentation
- 日本材料学会半導体エレクトロニクス部門委員会平成26年度第2回研究会, Nov. 2014, Japanese, Domestic conferenceポリマー中に埋め込まれたPbSコロイド量子ドットにおける磁気発光強度のヒステリシス特性Oral presentation
- International Symposium on Recent Progress of Photonic Devices and Materials, Nov. 2014, English, Kobe University, International conferenceUltrafast Optical Switch Based on Quantum Beat Oscillation in GaAs/AlAs Multiple Quantum Well[Invited]Invited oral presentation
- International Symposium on Recent Progress of Photonic Devices and Materials, Nov. 2014, English, International conferenceTwo-dimensional electronic states of epitaxial nitrogen atomic sheet in GaAs[Invited]Invited oral presentation
- 6th World Conference on Photovoltaic Energy Conversion, Nov. 2014, English, Kyoto International Conference Center, International conferenceSuppression of Thermal Carrier Escape and Efficient Photo-Carrier Generation by Two-Step Photon Absorption in Intermediate-Band Solar Cells Using a Dot-in-Well StructureOral presentation
- International Symposium on Recent Progress of Photonic Devices and Materials, Nov. 2014, English, Kobe University, International conferencePhotoluminescence Decay Dynamics in Epitaxial Two-Dimensional Nitrogen Atomic Sheet in GaAsOral presentation
- International Symposium on Recent Progress of Photonic Devices and Materials, Nov. 2014, English, Kobe University, International conferenceModulation of Photoluminescence Properties of InAs Quantum Dots on Nitrogen δ-Doped GaAsOral presentation
- WCPEC-6, Nov. 2014, English, Kyoto International Conference Center, International conferenceHot Carrier Intermediate Band Solar Cell Using Low-Dimensioned Quantum StructuresOral presentation
- International Symposium on Recent Progress of Photonic Devices and Materials, Nov. 2014, English, Kobe University, International conferenceGrowth and Characterization of Stacked InAs/GaAs Quantum Dots for Photovoltaics[Invited]Invited oral presentation
- International Symposium on Recent Progress of Photonic Devices and Materials, Nov. 2014, English, Kobe University, International conferenceFabrication and Characterization of Cyanine Dye Thin Films Grown by a Layer-by -Layer MethodOral presentation
- WCPEC-6, Nov. 2014, English, Kyoto International Conference Center, International conferenceEfficient Two-Step Photon Absorption in InAs/GaAs Quantum Dot Solar CellsOral presentation
- International Symposium on Recent Progress of Photonic Devices and Materials, Nov. 2014, English, Kobe University, International conferenceControl of Electronic States Colloidal PbS Quantum Dots Embedded in Polymer FilmsOral presentation
- 6th Szeged International Workshop on Advances in Nanoscience 2014, Oct. 2014, English, Hotel Forrás, Szeged, Domestic conferenceThermal enhancement of exciton quantum beat in a GaAs/AlAs multiple quantum wellOral presentation
- Eleventh International Conference on Flow Dynamics, Oct. 2014, English, Sendai, International conferencePhotoluminescence Properties of InAs Quantum Dots on Nitrogen δ-Doped GaAsOral presentation
- 第75回応用物理学会学術講演会, Sep. 2014, Japanese, Domestic conference低次元量子構造を利用したホットキャリア中間バンド型太陽電池Oral presentation
- 第75回応用物理学会秋季学術講演会, Sep. 2014, Japanese, 北海道大学, Domestic conference光スイッチ応用へ向けたシアニン色素薄膜の作製Oral presentation
- 第75回応用物理学会秋季学術講演会, Sep. 2014, Japanese, 北海道大学, Domestic conferenceダブルパルス-ポンプ-プローブ法による高温下での励起子量子ビートの観測Oral presentation
- 第75回応用物理学会学術講演会, Sep. 2014, Japanese, Domestic conferenceGaAs中のエピタキシャル二次元窒素膜の電子状態 (II)Oral presentation
- 第75回応用物理学会学術講演会, Sep. 2014, Japanese, Domestic conferenceGaAs中のエピタキシャル二次元窒素膜における発光ダイナミクスOral presentation
- 日本物理学会 2014年秋季大会, Sep. 2014, Japanese, 中部大学, Domestic conferenceGaAs/AlAs 多重量子井戸におけるアップコンバージョン発光Oral presentation
- 32nd International Conference on Physics of Semiconductors, Aug. 2014, English, International conferenceTwo-dimensional electronic states of epitaxial nitrogen atomic sheet in GaAs grown by nitrogen delta-doping techniqueOral presentation
- UK Semiconductors 2014, Jul. 2014, English, Sheffield Hallam University, International conferenceLow-Power Pulse Modulation Based on Exciton Quantum Beat in a GaAs/AlAs Multiple Quantum WellPoster presentation
- 33rd Electronic Materials Symposium, Jul. 2014, Japanese, Domestic conferenceEnhancement of interaction among nitrogen pair centers in epitaxial two-dimensional nitrogen atomic sheet in GaAsPoster presentation
- HEMP 2014, Jul. 2014, English, Imperial College London, International conferenceCarrier Dynamics and Two-Step Photon Absorption in InAs/GaAs Quantum Dot Intermediate Band Solar CellsOral presentation
- 40th IEEE Photovoltaic Specialists Conference, Jun. 2014, English, International conferenceCarrier Time-of-Flight Measurement Using a Probe Structure for Direct Evaluation of Carrier Transport in Quantum Structure Solar CellsOral presentation
- 8th International Conference on Quantum Dots, May 2014, English, Pisa, International conferenceStructural Modification of InAs Quantum Dots Grown on Nitrided GaAs(001)SurfacePoster presentation
- 第61回応用物理学会春季学術講演会, Mar. 2014, Japanese, 応用物理学会, 神奈川, Domestic conference窒素δドープGaAs(001)層上のInAs量子ドット自己形成Oral presentation
- 第61回応用物理学会春季学術講演会, Mar. 2014, Japanese, 応用物理学会, 神奈川, Domestic conferenceInAs/GaAs量子ドット太陽電池の量子準位を介した2段階光吸収Oral presentation
- 第61回応用物理学会春季学術講演会, Mar. 2014, Japanese, 応用物理学会, 神奈川, Domestic conferenceInAs/AlxGa1-xAs量子ドットにおけるキャリアの熱活性特性Oral presentation
- 第61回応用物理学会春季学術講演会, Mar. 2014, Japanese, 青山学院大学, Domestic conferenceGaAs中のエピタキシャル二次元窒素膜の電子状態Oral presentation
- EMN Fall Meeting, Dec. 2013, English, Orland, Florida, USA, International conferenceIntraband Carrier Dynamics in Self-Assembled Quantum Dots for Infrared Optical Devices[Invited]Invited oral presentation
- 第23回光物性研究会, Dec. 2013, Japanese, 大阪市立大学, Domestic conferenceInAs/GaAs量子ドットにおけるbound-to-continuum型サブバンド間遷移の吸収係数Poster presentation
- 第23回光物性研究会, Dec. 2013, Japanese, 大阪市立大学, Domestic conferenceGaAs中におけるエピタキシャル2次元窒素膜の磁気発光特性Poster presentation
- 10th International Conference on Flow Dynamics, Nov. 2013, English, Sendai International Center, International conferenceFabrication of InAs Quantum Dots on Nitrided GaAs (001) SurfaceOral presentation
- EU PVSEC 2013, Oct. 2013, English, Paris, International conferenceNGCPV: A New Generation of Concentrator Photovoltaic Cells, Modules and SystemsOral presentation
- 日本物理学会2013年秋季大会, Sep. 2013, Japanese, 徳島大学, Domestic conference積層方向を制御した InAs/GaAs量子ドットの発光偏光特性Poster presentation
- 2013 JSAP-MRS Joint Symposia, Sep. 2013, English, Kyoto, International conferenceLarge Optical Spin-Splitting in the GdN Electronic StatesOral presentation
- NSF Workshop on US-Japan Frontiers in Novel Photonic-Magnetic Devices, Sep. 2013, English, Kasugano-so, Nara, International conferenceGd Doping in AIN and Bright Ultraviolet Light Emission[Invited]Invited oral presentation
- The 12th European Conference on Molecular Electronics, Sep. 2013, English, London, UK, International conferenceFabrication and characterization of bilayer thin films of cyanine dyes by a layer-by-layer method towards realization of ultrafast response device with high repetition ratePoster presentation
- 2013 JSAP-MRS Joint Symposia, Sep. 2013, English, Doshisya University, International conferenceElectron Localization in GaAs:N Grown by Using δ-Doping TechniqueOral presentation
- 2013 JSAP-MRS Joint Symposia, Sep. 2013, English, Kyoto, International conferenceEffects of Built-in Electric Field on External Quantum Efficiency of InAs/GaAs Quantum Dot Interdimediate Band Solar CellOral presentation
- 2013 JSAP-MRS Joint Symposia, Sep. 2013, English, Kyoto, International conferenceBright Ultraviolet Light Emitting Devices Using AlGdN[Invited]Invited oral presentation
- Collaborative Conference on Materials Research (CCMR) 2013, Jun. 2013, English, Jeju island, South Korea, International conferenceOptical Characteristics of Quantum Dot Ensembles Grown by Using the Strain Compensation Technique[Invited]Invited oral presentation
- The 40th International Symposium on Compound Semiconductors, May 2013, English, Kobe, International conferenceRadiative Recombination Properties in InAs/GaAs Quantum Dot Solar CellsOral presentation
- The 40th International Symposium on Compound Semiconductors, May 2013, English, Kobe, International conferencePolarization Controlled Emisson from Closely Stacked InAs/GaAs Quantum DotsOral presentation
- ISCS2013, May 2013, English, Kobe, International conferenceEnergy Relaxation of Photoexcited Electrons in Direct Si-Doped InAs/GaAs Quantum DotsOral presentation
- ISCS2013, May 2013, English, Kobe, International conferenceEffect of State Filling on Intraband Carrier Dynamics in InAs/GaAs quantum DotsOral presentation
- ISCS2013, May 2013, English, Kobe, International conferenceAnisoropic Intraband Relaxation in a Multistacked Quantum Dot EnsemblePoster presentation
- 第60回応用物理学関係連合講演会, Mar. 2013, Japanese, 神奈川工科大学, Domestic conference歪み補償多層積層量子ドットにおける光学利得の面内異方性Oral presentation
- 第60回応用物理学会春季学術講演会, Mar. 2013, Japanese, 神奈川工科大学, Domestic conference窒素を高濃度デルタドープしたGaAsの磁気光学特性Oral presentation
- 第60回応用物理学会春季学術講演会, Mar. 2013, Japanese, 神奈川工科大学, Domestic conference斜め積層InAs/GaAs量子ドットの端面発光特性Oral presentation
- 第60回応用物理学会春季学術講演会, Mar. 2013, Japanese, 神奈川工科大学, Domestic conferenceSi直接ドーピングInAs/GaAs量子ドットのキャリア緩和過程Oral presentation
- 日本物理学会第68回年次大会, Mar. 2013, Japanese, 広島大学, Domestic conferenceIntensity modulation of optical pulse due to exciton quantum beat in a GaAs/AlAs multiple quantum wellOral presentation
- SPIE Photonics West 2013, Feb. 2013, English, California, United States, International conferenceIntraband Carrier Dynamics in InAs/GaAs Quantum Dots Studied by Two-Color Excitation SpectroscopyOral presentation
- 第23回光物性研究会, Dec. 2012, Japanese, 大阪市立大学, Domestic conference窒素デルタドーピングによるGaAs電子状態の制御Poster presentation
- 4th International Workshop on Quantum Nanostructure Solar Cells/8th Seminar on Quantum Nanostructure Materials, Dec. 2012, English, Kobe Ubiversity, International conferenceIntermediate-Band Solar Cells using InGaAs/InP Superlattices[Invited]Invited oral presentation
- 4th International Workshop on Quantum Nanostructure Solar Cells, 8th Seminar on Quantum Nanostructure Materials, Dec. 2012, English, Kobe, International conferenceInAs/GaAs Quantum Dot Superlattices and Optical Responses[Invited]Invited oral presentation
- 第23回光物性研究会, Dec. 2012, Japanese, 大阪市立大学, Domestic conferenceIn0.53Ga0.47As/InP超格子における2段階光吸収を利用した中間バンド型太陽電池Poster presentation
- Sixth International Meeting on Molecular Electronics, Dec. 2012, English, Grenoble, France, International conferenceControl of energy transfer rate towards ultrafast response due to changing number ratio of energy donor-acceptor cyanine dye moleculesOral presentation
- 平成24年度第1回半導体エレクトロニクス部門委員会研究会, Sep. 2012, Japanese, 日本材料学会半導体エレクトロニクス部門委員会, 和歌山, Domestic conference量子ドット光アンプの利得スペクトル測定Oral presentation
- 日本物理学会2012年秋季大会, Sep. 2012, Japanese, 横浜国立大学, Domestic conference光共振器構造中のInAs/GaAs量子ドットにおけるサブバンド間遷移ダイナミクスOral presentation
- 第73回応用物理学会学術講演会, Sep. 2012, Japanese, 愛媛大学・松山大学, Domestic conference光共振器構造中のInAs/GaAs量子ドットにおける2段階光吸収の増強Oral presentation
- 第73回応用物理学会学術講演会, Sep. 2012, Japanese, 愛媛大学・松山大学, Domestic conferenceSiダイレクトドーピングによるInAs量子ドットのフェルミ準位の変化Oral presentation
- The17th International Conference on Molecular Beam Epitaxy, Sep. 2012, English, MBE, Nara, International conferenceMiniband Formation in Closely-Stacked InAs GaAs Quantum DotsOral presentation
- 第73回応用物理学会学術講演会, Sep. 2012, Japanese, 愛媛大学・松山大学, Domestic conferenceInフラックスによるInAs/GaAs量子ドットの積層方向の制御Oral presentation
- 第73回応用物理学会学術講演会, Sep. 2012, Japanese, 愛媛大学・松山大学, Domestic conferenceInAs供給量を制御した近接積層InAs/GaAs量子ドットの発光特性Oral presentation
- The17th International Conference on Molecular Beam Epitaxy, Sep. 2012, English, MBE, Nara, International conferenceEffects of Excess Electrons on Recombination Lifetime in Directly Si-doped InAs GaAs Quantum DotsOral presentation
- European Optical Society Annual Meeting 2012, Sep. 2012, English, Aberdeen, UK, International conferenceEffect of fifth nonlinear polarization on exciton Rabi oscillation in GaAs/AlxGa1-xAs double heterostructure thin filmsOral presentation
- The17th International Conference on Molecular Beam Epitaxy, Sep. 2012, English, MBE, Nara, International conferenceControl of Stacking Direction of InAs GaAs Quantum DotsOral presentation
- Photon12 IOP's premier conference in optics and photonics, Sep. 2012, English, Durham, UK, International conferenceControl of response of exciton polariton confined in GaAs thin films by controlling pump and probe pulsesPoster presentation
- The17th International Conference on Molecular Beam Epitaxy, Sep. 2012, English, MBE, Nara, International conferenceControl of Electronic Structure of GaAs Using Nitrogen δ-doping TechniqueOral presentation
- High-efficiency materials for photovoltaics, Sep. 2012, English, London, UK, International conferenceCarrier Dynamics of Electrons in Intermediate States of InAs/GaAs Quantum Dots[Invited]Invited oral presentation
- 第2回光科学異分野横断萌芽研究会, Aug. 2012, Japanese, 岡崎コンファレンスセンター, Domestic conferenceGaAs中の配列制御された窒素ペアに束縛された励起子の光物性Oral presentation
- UK Semiconductors, Jul. 2012, English, Sheffield, UK, International conferenceUltrafast photonic Mach-Zehnder switch using quantum dot vertical cavity structuresOral presentation
- The 10th International Conference on Excitonic Processes in Condensed Mattsr, Nanostructured and Molecular Materials, Jul. 2012, English, EXCON, Groningen, Netherlands, International conferenceTuning Optical and Ferromagnetic Properties of GdN Thin Films by Nitrogen-Vacancy CentersOral presentation
- The 10th International Conference on Excitonic Processes in Condensed Mattsr, Nanostructured and Molecular Materials, Jul. 2012, English, EXCON, Groningen, Netherlands, International conferenceStrong Electron-Hole Correlation in Bound Exciton in Nitrogen δ-Doped GaAsOral presentation
- The Nineteenth International Workshop on Active-Matrix Flatpanel Displays and Devices, Jul. 2012, English, JSAP, Kyoto, International conferencePhysical Properties of Amorphous In-Ga-Zn-O Films Deposited Under Various Sputtering PressureOral presentation
- The 10th International Conference on Excitonic Processes in Condensed Mattsr, Nanostructured and Molecular Materials, Jul. 2012, English, Groningen, Netherlands, International conferenceIntraband Optical Response in InAsGaAs Quantum DotsOral presentation
- The 10th International Conference on Excitonic Processes in Condensed Mattsr, Nanostructured and Molecular Materials, Jul. 2012, English, EXCON, Groningen, Netherlands, International conferenceExcitation Effects of Confined Exciton Polariton on Pulse Shape Propagating in GaAs Thin FilmsOral presentation
- 31st International Conference on the Physics of Semiconductors, Jul. 2012, English, ICPS, Zurich, Switzerland, International conferenceEvaluation of Minority and Majority Spin Band Energies of Ferromagnetic GdN Thin Films Using Optical Absorption SpectroscopyOral presentation
- 31nd International Conference on the Physics of Semiconductors, Jul. 2012, English, ETH, Zurich, Switzerland, International conferenceDetermination of Magnetic Anisotropies in GdN Thin Film by Ferromagnetic ResonanceOral presentation
- 31nd International Conference on the Physics of Semiconductors, Jul. 2012, English, ETH, Zurich, Swiss, International conferenceDelocalization of Exciton States in InAs GaAs Quantum Dot SuperlatticesOral presentation
- 31st Electronic Materials Symposium, Jul. 2012, Japanese, ラフォーレ修善寺, Domestic conferenceDelocalization of electronic states formed by nitrogen pairs in GaAsPoster presentation
- International Conference on Optical, Optoelectronic and Photonic Materials and Applications, Jun. 2012, English, ICOOPMA, Nara, International conferenceHigh-Resolution Optical Coherence Tomography Using Broadband Light Sources with Strain-Controlled InAs GaAs Quantum DotsOral presentation
- International Conference on Optical, Optoelectronic and Photonic Materials and Applications, Jun. 2012, English, ICOOPMA, Nara, International conferenceExtremely Uniform Excitonic States in Nitrogen δ-Doped GaAs[Invited]Invited oral presentation
- International Conference on Optical, Optoelectronic and Photonic Materials and Applications, Jun. 2012, English, ICOOPMA, Nara, International conferenceCarrier Dynamics in Multiple Stacked Quantum Dots Under Spacer Layer Excitation ConditionsOral presentation
- 38th IEEE Photovoltaic Specialist Conference, Jun. 2012, English, IEEE, Austin, United States of America, International conferenceCarrier Dynamics in Intermediate States of InAs/GaAs Quantum Dots Embedded in Photonic Cavity Structure[Invited]Invited oral presentation
- 2012 MRS Spring Meeting and Exhibit,, Apr. 2012, English, Materials Research Society, SanFrancisco, United States of America, International conferenceAnalysis of Spin Splitting in Ferromagnetic GdN Epitaxial Thin FilmsOral presentation
- 日本物理学会第67回年次大会, Mar. 2012, Japanese, 日本物理学会, 西宮市, Domestic conference歪み補償多層積層量子ドットにおける非共鳴励起キャリアダイナミクスPoster presentation
- 第59回応用物理学関係連合講演会, Mar. 2012, Japanese, 日本応用物理学会, 東京都, Domestic conference窒素をデルタドープしたGaAsにおける束縛励起子発光線幅の温度依存性Oral presentation
- 第59回応用物理学関係連合講演会, Mar. 2012, Japanese, 応用物理学会, 新宿区, Domestic conference近接積層InAs/GaAs量子ドットの光物性Oral presentation
- 第59回応用物理学関係連合講演会, Mar. 2012, Japanese, 応用物理学会, 新宿区, Domestic conferenceGaAsエピタキシャル界面への窒素のデルタドーピングと高均一発光特性Invited oral presentation
- 第22回光物性研究会, Dec. 2011, Japanese, 光物性研究会組織委員, 熊本市, Domestic conference半導体中の励起子非線形光学応答のコヒーレント制御Poster presentation
- 第22回光物性研究会, Dec. 2011, Japanese, 光物性研究会組織委員, 熊本市, Domestic conference積層InAs量子ドットにおける光学利得の異方性Poster presentation
- Workshop on Innovation and Pioneering Technology 2011, Dec. 2011, English, WINPTech組織委員会, 神戸市, International conferenceSwitching characteristics of exciton response in GaAs thin filmsPoster presentation
- 21st International Photovoltaic Science and Engineering Conference PVSECPVSEC-21, Dec. 2011, English, Fukuoka, International conferenceSuppression of Nonradiative Recombination Process in Directly Si-Doped InAs Quantum DotsPoster presentation
- 第22回光物性研究会, Dec. 2011, Japanese, 光物性研究会組織委員, 熊本市, Domestic conferenceGaAs薄膜における励起子応答の光スイッチング特性Poster presentation
- 第22回光物性研究会, Dec. 2011, Japanese, 光物性研究会組織委員, 熊本市, Domestic conferenceGaAs中の窒素ペアに束縛された励起子における励起子-格子相互作用Poster presentation
- 第22回光物性研究会, Dec. 2011, Japanese, 光物性研究会組織委員, 熊本市, Domestic conferenceGaAs/AlAs超格子における励起子超高速応答Poster presentation
- Workshop on Innovation and Pioneering Technology 2011, Dec. 2011, English, WINPTech組織委員会, 神戸市, International conferenceEffects of fifth-order nonlinear polarization on optical control of excitonic states confined in GaAs thin films by using Rabi oscillationPoster presentation
- The 18th International Display Workshops, Dec. 2011, English, Nagoya, International conferenceEffects of Argon Plasma Irradiation on Amorphous In-Ga-Zu-Ofilm Evaluated by Microwave Photoconductivity Decay Method[Invited]Invited oral presentation
- 21st International Photovoltaic Science and Engineering Conference PVSECPVSEC-21, Dec. 2011, English, Fukuoka, International conferenceEffect of Spacer Layer Thickness on Optical Properties of Multi-Stacked InGaAs Quantum Dot Grown on GaAs(311)B SubstrateOral presentation
- Workshop on Innovation and Pioneering Technology 2011, Dec. 2011, English, WINPTech組織委員会, 神戸市, International conferenceEffect of control of number ratio of energy donor-acceptor cyanine dye molecules in thin films on Förster energy transferPoster presentation
- 8th International Conference on Flow Dynamics, Nov. 2011, English, ICFD organizing committee, 仙台市, International conferenceOptical Properties of Quantum Dot SuperlatticesPoster presentation
- 15th International Conference on Thin Films,2011, Nov. 2011, English, Kyoto, International conferenceMagneto-Optical Effect in GaN Epitaxial Thin FilmsOral presentation
- 21st International Photovoltaic Science and Engineering Conference PVSECPVSEC-21, Nov. 2011, English, Fukuoka, International conferenceEffects of Absorption Balance in Intermediate Band Quantum Dots Solar CellsPoster presentation
- 15th International Conference on Thin Films,2011, Nov. 2011, English, Kyoto, International conferenceCorrelation Between Local Atomic Structure and Ultra Violet Luminescence of AlGdN Thin FilmsOral presentation
- 平成23年度第1回半導体エレクトロニクス部門委員会研究会, Oct. 2011, Japanese, 材料学会半導体エレクトロニクス部門委員会, 神戸市, Domestic conference光共振器を有する中間バンド型太陽電池の光吸収増強効果Oral presentation
- 平成23年度第1回半導体エレクトロニクス部門委員会研究会, Oct. 2011, Japanese, 材料学会半導体エレクトロニクス部門委員会, 神戸市, Domestic conference近接積層量子ドット成長を利用した偏波無依存光応答の実現Oral presentation
- 日本物理学会2011年秋季大会, Sep. 2011, Japanese, 日本物理学会, 富山市, Domestic conference歪み補償多層積層量子ドットにおける非共鳴励起緩和過程Poster presentation
- 第72回応用物理学会学術講演会, Sep. 2011, Japanese, 応用物理学会, 山形市, Domestic conference不純物制御したInAs量子ドットにおける発光再結合ダイナミックスOral presentation
- 第72回応用物理学会学術講演会, Sep. 2011, Japanese, 日本応用物理学会, 山形市, Domestic conference窒素をデルタドープしたGaAsにおける束縛励起子発光線の起源Oral presentation
- 第72回応用物理学会学術講演会, Sep. 2011, Japanese, 日本応用物理学会, 山形市, Domestic conference多層積層高密度量子ドットにおける光学利得Oral presentation
- 第72回応用物理学会学術講演会, Sep. 2011, Japanese, 応用物理学会, 山形市, Domestic conference近接積層に伴う量子ドットのフォトルミネッセンス偏光特性Oral presentation
- Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, Sep. 2011, English, Austria, International conferencePhotoluminescence Polarization Anisotropy in Closely Stacked InAs/GaAs Quantum DotsOral presentation
- 12th International Conference on Optics of Excitons in Confined Systems, Sep. 2011, English, OECS組織委員会, Paris, International conferencePhotoluminescence Dynamics of Spacer Layer Carriers in Multi Stacked Quantum DotsPoster presentation
- 第72回応用物理学会学術講演会, Sep. 2011, Japanese, 日本応用物理学会, 山形市, Domestic conferenceLayer-by-Layer法による交互吸着シアニン色素薄膜の作製Oral presentation
- 12th International Conference on Optics of Excitons in Confined Systems, Sep. 2011, English, OECS組織委員会, Paris, France, International conferenceInteraction of quantized exciton polaritons with nonresonant pump pulse in GaAs thin flimsPoster presentation
- 第72回応用物理学会学術講演会, Sep. 2011, Japanese, 日本応用物理学会, 山形市, Domestic conferenceGaAs薄膜中の光電場に対する局所場の効果Poster presentation
- 日本物理学会2011年秋季大会, Sep. 2011, Japanese, 日本物理学会, 富山市, Domestic conferenceGaAs薄膜における励起子状態の光制御に対する入射光エネルギー依存性Oral presentation
- 日本物理学会2011年秋季大会, Sep. 2011, Japanese, 日本物理学会, 富山市, Domestic conferenceGaAs中の窒素ペアに束縛された励起子分子の磁気光学特性Poster presentation
- 第72回応用物理学会学術講演会, Sep. 2011, Japanese, 日本応用物理学会, 山形市, Domestic conferenceGaAs中の窒素ペアに束縛された励起子のフォノンサイドバンド発光Oral presentation
- 日本物理学会2011年秋季大会, Sep. 2011, Japanese, 日本物理学会, 富山市, Domestic conferenceGaAs nipi超格子におけるコヒーレントプラズモン振動のドーピング濃度依存性Poster presentation
- 2011 International Conference on Solid State Devices and Materials, Sep. 2011, English, SSDN組織委員会, Aichi, International conferenceEffect of Capping Layer Growth on Bound Exciton Luminescence in Nitrogen δ-Doped GaAsPoster presentation
- High-Efficiency Materials for Photovoltaics, Imperial College London, Aug. 2011, English, London, International conferenceCarrier Dynamics in Quantum Dot Superlattices[Invited]Invited oral presentation
- 37th IEEE Photovoltaic Specialist Conference, Jul. 2011, English, Seattle, International conferenceTwo-Photons Transition in Intermediate Band Solar CellsOral presentation
- 第30回電子材料シンポジウム, Jul. 2011, Japanese, EMS組織委員, 大津市, Domestic conferenceIn-plane optical anisotropy in stacked InAs quantum dots with interconnected electron statesPoster presentation
- 第30回電子材料シンポジウム, Jul. 2011, Japanese, EMS組織委員, 大津市, Domestic conferenceElectronic states in multiply stacked InAs/GaAs quantum dots studied by polarized photoluminescence spectroscopyPoster presentation
- 第30回電子材料シンポジウム, Jul. 2011, Japanese, EMS組織委員, 大津市, Domestic conferenceCapping layer dependence of bound exciton luminescence in nitrogen delta-doped GaAsPoster presentation
- 23rd International Conference on Indium Phosphide and Related Materials, May 2011, English, Germany, International conferenceOptical Phase Shifter Using Quantum Dots in a Vertical CavityOral presentation
- 38th International Symposium on Compound Semiconductors, May 2011, English, ISCS組織委員会, Germany, International conferenceNear-Field Photoluminescence Spectroscopy of CdTe/Cd0.75Mn0.25Te Tilted SuperlatticesPoster presentation
- 38th International Symposium on Compound Semiconductors, May 2011, English, ISCS組織委員会, Berling, Germany, International conferenceDiamagnetic shift of exciton bound to the nitrogen pairs in GaAsOral presentation
- 2011 MRS Spring Meeting and Exhibit, Apr. 2011, English, SanFrancisco, International conferenceUltraviolet Light Emitting Devices Using AlGdN[Invited]Invited oral presentation
- 第71回応用物理学会学術講演会, Mar. 2011, Japanese, 日本応用物理学会, 長崎市, Domestic conference非共鳴励起下における励起子ポラリトンと光電場の結合Oral presentation
- 第60回応用物理学関係連合講演会, Mar. 2011, Japanese, 応用物理学会, 厚木市, Domestic conference窒素をデルタドープしたGaAsにおける束縛励起子発光線のキャップ層成長条件依存性Oral presentation
- 第58回応用物理学関係連合講演会, Mar. 2011, Japanese, 日本応用物理学会, 厚木市, Domestic conference窒素をデルタドープしたGaAsにおける束縛励起子発光線のキャップ層成長条件依存性Oral presentation
- 日本物理学会第66回年次大会, Mar. 2011, Japanese, 日本物理学会, 新潟市, Domestic conference多層積層量子ドット励起子とスペーサー層キャリアとの相関Oral presentation
- 第58回応用物理学関係連合講演会, Mar. 2011, Japanese, 日本応用物理学会, 厚木市, Domestic conference多層積層量子ドットにおける偏光特性の励起光強度依存性Oral presentation
- 第58回応用物理学関係連合講演会, Mar. 2011, Japanese, 日本応用物理学会, 厚木市, Domestic conference重心運動閉じ込め励起子の量子ビートの生成と検出Oral presentation
- 第58回応用物理学関係連合講演会, Mar. 2011, Japanese, 応用物理学会, 厚木市, Domestic conference近接多層積層量子ドットのフォトルミネッセンス偏光特性Oral presentation
- 第58回応用物理学関係連合講演会, Mar. 2011, Japanese, 日本応用物理学会, 厚木市, Domestic conferenceシアニン色素薄膜におけるエネルギー移動の飽和のメカニズムOral presentation
- 日本物理学会第66回年次大会, Mar. 2011, Japanese, 日本物理学会, 新潟市, Domestic conferenceGaAs 薄膜における励起子状態制御に対する空間電場コヒーレンスPoster presentation
- 「ナノ構造・物性」第3回研究会, Mar. 2011, Japanese, 神戸大学自然科学系融合研究環ナノエンジニアリング研究チーム, ナノ学会ナノ構造・物性部会, 神戸市, Domestic conferenceGaAs中の窒素ペアに束縛された励起子の輻射再結合寿命Oral presentation
- 第59回応用物理学関係連合講演会, Mar. 2011, Japanese, 応用物理学会, 厚木市, Domestic conferenceGaAs 中の窒素ペアに束縛された励起子の磁気光学特性Oral presentation
- 第58回応用物理学関係連合講演会, Mar. 2011, Japanese, 日本応用物理学会, 厚木市, Domestic conferenceGaAs中の窒素ペアに束縛された励起子の磁気光学特性Oral presentation
- 日本物理学会第66回年次大会, Mar. 2011, Japanese, 日本物理学会, 新潟市, Domestic conferenceGaAs/AlAs超格子における励起子非線形光学特性に対するミニバンド形成の効果Poster presentation
- 日本表面科学会第67回表面科学研究会<In-situモニタリングの視点からみた表面制御・評価技術~現状と課題~, Feb. 2011, Japanese, 東京都, Domestic conference自己形成量子ドット成長過程のその場観察と新規光デバイスの作製[Invited]Invited oral presentation
- 第21回光物性研究会, Dec. 2010, Japanese, 光物性研究会組織委員, 大阪市, Domestic conference歪み補償積層量子ドットの光学異方性Poster presentation
- 第21回光物性研究会, Dec. 2010, Japanese, 光物性研究会組織委員, 大阪市, Domestic conference変調ドープGaAsにおけるコヒーレントプラズモンのドーピング濃度依存性Poster presentation
- 第21回光物性研究会, Dec. 2010, Japanese, 光物性研究会組織委員, 大阪市, Domestic conference窒素をデルタドープしたGaAsにおける励起子微細構造の反磁性シフトPoster presentation
- 第21回光物性研究会, Dec. 2010, Japanese, 光物性研究会組織委員, 大阪市, Domestic conference積層超高密度量子ドットにおけるキャリアダイナミクスPoster presentation
- 第21回光物性研究会, Dec. 2010, Japanese, 光物性研究会組織委員, 大阪市, Domestic conference検出パルス制御によるGaAs薄膜中の閉じ込め励起子の超高速応答Poster presentation
- 第21回光物性研究会, Dec. 2010, Japanese, 大阪市, Domestic conference希土類化合物半導体GdNにおけるバンド端光吸収の磁気光学特性Oral presentation
- 第21回光物性研究会, Dec. 2010, Japanese, 光物性研究会組織委員, 大阪市, Domestic conferenceシアニン色素薄膜におけるエネルギー移動に対するドナー‐アクセプタ分子数比の効果Poster presentation
- 第21回光物性研究会, Dec. 2010, Japanese, 光物性研究会組織委員, 大阪市, Domestic conferenceGaSb/AlGaSb多重量子井戸構造における発光特性Poster presentation
- 第21回光物性研究会, Dec. 2010, Japanese, 光物性研究会組織委員, 大阪市, Domestic conferenceGaAs薄膜における閉じ込め励起子状態の光制御Poster presentation
- 第22回光物性研究会, Dec. 2010, Japanese, 光物性研究会組織委員会, 大阪市, Domestic conferenceGaAs中の窒素等電子トラップ束縛励起子の発光ダイナミクスPoster presentation
- Workshop on Information, Nano and Photonics Technology 2010, Dec. 2010, English, WINPTECH組織委員会, 神戸市, International conferenceEffect of spectral width of probe pulses on response of excitons confined in GaAs thin filmsPoster presentation
- Workshop on Information, Nano and Photonics Technology 2010, Dec. 2010, English, WINPTECH組織委員会, 神戸市, International conferenceBiexcitonic contribution to nonlinear optical response of excitons in GaAs/AlAs superlatticesPoster presentation
- 日本材料学会平成22年度第2回半導体エレクトロニクス部門研究会, Nov. 2010, Japanese, 日本材料学会, 堺市, Domestic conference量子ドットの多層積層化に伴う偏光異方性の発現と制御Oral presentation
- 平成22年度東北大学電気通信研究所共同プロジェクト研究会, Nov. 2010, Japanese, 宮城県, Domestic conference自己形成量子ドットの精密な成長制御と3次元構造化[Invited]Invited oral presentation
- 日本材料学会半導体エレクトロニクス研究部門平成22年度第2回研究会, Nov. 2010, Japanese, 大阪府, Domestic conferenceAIGdN結晶薄膜を利用したナローバンド深紫外発光デバイスの開発と基礎特性Oral presentation
- 第6回量子ナノ材料セミナー, Oct. 2010, Japanese, 茨城県, Domestic conference量子ドット超格子によるキャリアダイナミックス制御[Invited]Invited oral presentation
- The 6th International Workshop on Nano-scale Spectroscopy and Nanotechnology, Oct. 2010, English, NSS organizing committee, 神戸市, International conferenceIn-Plane Polarization Anisotropy in Vertically Stacked InAs Quantum DotsOral presentation
- 第71回応用物理学会学術講演会, Sep. 2010, Japanese, 日本応用物理学会, 長崎市, Domestic conference量子ドット太陽電池における吸収係数の理論的解析Oral presentation
- 日本物理学会2010年秋季大会, Sep. 2010, Japanese, 日本物理学会, 堺市, Domestic conference変調ドープGaAsにおける長寿命コヒーレントプラズモンOral presentation
- 第71回応用物理学会学術講演会, Sep. 2010, Japanese, 日本応用物理学会, 長崎市, Domestic conference多層積層量子ドットにおける高次励起子準位励起効果Oral presentation
- 第71回応用物理学会学術講演会, Sep. 2010, Japanese, 日本応用物理学会, 長崎市, Domestic conference積層量子ドットにおける偏光特性に対する電子的結合効果Oral presentation
- 第71回応用物理学会学術講演会, Sep. 2010, Japanese, 長崎市, Domestic conference深紫外光源用Gd添加AIN薄膜の構造と発光強度の関係”Oral presentation
- 日本物理学会2010年秋季大会, Sep. 2010, Japanese, 日本物理学会, 堺市, Domestic conference高密度多層積層量子ドットにおけるキャリア移動Oral presentation
- 第71回応用物理学会学術講演会, Sep. 2010, Japanese, 長崎市, Domestic conference希土類窒化物半導体GdNの強磁性相転移に伴うバンド端構造変化Oral presentation
- 第71回応用物理学会学術講演会, Sep. 2010, Japanese, 長崎市, Domestic conferenceプラズマチューブアレイを用いたフィルム型水銀フリー深紫外光源Oral presentation
- 第71回応用物理学会学術講演会, Sep. 2010, Japanese, 日本応用物理学会, 長崎市, Domestic conferenceシアニン色素薄膜におけるエネルギー移動の高効率化Oral presentation
- 第71回応用物理学会学術講演会, Sep. 2010, Japanese, 長崎市, Domestic conferenceSiを直接ドープしたInAs量子ドットにおける発光増強機構Oral presentation
- 第71回応用物理学会学術講演会, Sep. 2010, Japanese, 長崎市, Domestic conferenceSiダイレクトドーピングをした積層量子ドットの中間バンド型太陽電池への応用Oral presentation
- 2010年秋季第71回応用物理学会学術講演会, Sep. 2010, Japanese, 応用物理学会, 長崎市, Domestic conferenceIII-V半導体中不純物制御と励起子物性Invited oral presentation
- 日本物理学会2010年秋季大会, Sep. 2010, Japanese, 日本物理学会, 堺市, Domestic conferenceGaAs薄膜における閉じ込め励起子状態の制御性Poster presentation
- 第71回応用物理学会学術講演会, Sep. 2010, Japanese, 日本応用物理学会, 長崎市, Domestic conferenceGaAs薄膜におけるレーザースペクトル幅制御による励起子応答制御Oral presentation
- 日本物理学会2010年秋季大会, Sep. 2010, Japanese, 日本物理学会, 堺市, Domestic conferenceGaAsAlAs超格子における励起子非線形光学応答特性に対する励起子分子の寄与Oral presentation
- 第71回応用物理学会学術講演会, Sep. 2010, Japanese, 長崎市, Domestic conferenceAINバッファー層導入による深紫外蛍光体AIGdNの発光強度向上Oral presentation
- The 30th International Conference on the Physics of Semiconductors, Jul. 2010, English, ICPS organizing committee, Seoul, Korea, International conferenceMagneto-Photoluminescence Spectroscopy of Exciton Fine Structure in Nitrogen d-Doped GaAsPoster presentation
- 第29回電子材料シンポジウム, Jul. 2010, Japanese, EMS組織委員, 伊豆, Domestic conferenceLong-lived oscillation due to coherent plasmons in a modulation doped GaAsPoster presentation
- 9th International Conference on, Jul. 2010, English, EXCON組織委員会, Brisbane, Australia, International conferenceIntraband relaxation process in highly stacked quantum dotsPoster presentation
- 9th International Conference on, Jul. 2010, English, EXCON組織委員会, Brisbane, Australia, International conferenceExcitation power dependence of nonlinear optical response of excitons in GaAs/AlAs superlatticesPoster presentation
- The 9th International Conference on Excitonic and Photonic Processes in Condensed and Nano Materials, Jul. 2010, English, EXCON organizing committee, Brisbane, Australia, International conferenceBound Biexciton Luminescence in Nitrogen d-Doped GaAsPoster presentation
- 35th IEEE Photovoltaic Specialist Conference, Jun. 2010, English, Waikiki, Hawaii, International conferenceMulti-Stacked InAs/GaNAs Quantum dots with Direct Si Doping for use in Intermediate Band Solar CellOral presentation
- 35th IEEE Photovoltaic Specialist Conference, Jun. 2010, English, PVSC組織委員会, Honolulu, USA, International conferenceIntraband relaxation of photoexcited carriers in multiple stacked quantum dots and quantum dot chainsPoster presentation
- The 37th International Symposium on Compound Semiconductors, Jun. 2010, English, 応用物理学会, 高松市, International conferenceInteraction between Conduction-Band Edge and Nitrogen-Related Localized Levels in Nitrogen d-Doped GaAsOral presentation
- 37th International Symposium on Compound Semiconductors, Jun. 2010, English, ISCS組織委員会, 高松市, International conferenceInteraction between conduction-band edge and Nitrogen-related localized levels in Nitrogen d-doped GaAsOral presentation
- 35th IEEE Photovoltaic Specialist Conference, Jun. 2010, English, PVSC組織委員会, Honolulu, USA, International conferenceEnergy band structure design for quantum-dot, intermediate-band solar cellsPoster presentation
- 22nd International Conference on Indium Phosphide and Related Materials, Jun. 2010, English, IPRM組織委員会, 高松市, International conferenceAll-optical switch using InAs quantum dots in a vertical cavityOral presentation
- 22rd International Conference on Indium Phoshide and Related Materials, May 2010, English, ISCS組織委員会, Kagawa, International conferencePropagation Velocity of Excitonic Polaritons Confined in GaAs Thin FilmsOral presentation
- 22rd International Conference on Indium Phoshide and Related Materials, May 2010, English, Kagawa, International conferenceOptical and Ferromagnetic Properties of GdN Thin FilmsOral presentation
- 37th International Symposium on Compound Semiconductors, May 2010, English, ISCS組織委員会, 高松市, International conferenceEnergy band structure and half-filled condition in the quantum-dots intermediate band solar cellsOral presentation
- The International Conference on Nanophotonics 2010, May 2010, English, ICNP organizing committee, つくば市, International conferenceEmission properties of excitons strongly localized to nitrogen pairs in GaAs[Invited]Invited oral presentation
- 22rd International Conference on Indium Phoshide and Related Materials, May 2010, English, Kagawa, International conferenceControl of Polarization Properties of Electroluminescence from Vertically-Stacked InAs/GaAs Quantum Dots for 1.3 μm-band Semiconductor Optical AmplifiersOral presentation
- 22rd International Conference on Indium Phoshide and Related Materials, May 2010, English, Kagawa, International conferenceBroadband Light Source Using InAs Quantum Dots With InGaAs Strain-Reducing LayersOral presentation
- Quantum Dot 2010, Apr. 2010, English, Nottingham, International conferenceDirect Impurity Doping into InAs Quantum dots by Utilizing self-assembling Growth StepsOral presentation
- 第57回応用物理学関係連合講演会, Mar. 2010, Japanese, 日本応用物理学会, 平塚市, Domestic conference中間バンド型量子ドット太陽電池のエネルギー変換効率に及ぼすバンド構造の影響Oral presentation
- 日本物理学会第65回年次大会, Mar. 2010, Japanese, 日本物理学会, 岡山市, Domestic conference窒素をデルタドープしたGaAsにおける発光スペクトルの反磁性シフトPoster presentation
- 第57回応用物理学関係連合講演会, Mar. 2010, Japanese, 日本応用物理学会, 平塚市, Domestic conference窒素をデルタドープしたGaAs における電子状態の磁場依存性Poster presentation
- 第57回応用物理学関係連合講演会, Mar. 2010, Japanese, 日本応用物理学会, 平塚市, Domestic conference積層量子ドットにおける光励起キャリアの緩和ダイナミクスPoster presentation
- 第57回応用物理学関係連合講演会, Mar. 2010, Japanese, 日本応用物理学会, 平塚市, Domestic conference垂直共振器型量子ドット全光スイッチにおける2 段階飽和Oral presentation
- 日本物理学会第65回年次大会, Mar. 2010, Japanese, 日本物理学会, 岡山市, Domestic conference高密度多層積層量子ドットにおける励起子緩和ダイナミクスOral presentation
- 第57回応用物理学関係連合講演会, Mar. 2010, Japanese, 日本応用物理学会, 平塚市, Domestic conferenceシアニン色素添加ポリマー薄膜におけるエネルギー移動特性の制御Oral presentation
- 第57回応用物理学関係連合講演会, Mar. 2010, Japanese, 日本応用物理学会, 平塚市, Domestic conferenceGaAsN 量子井戸からInAs 量子ドットへのキャリアトンネリング特性Poster presentation
- 日本物理学会第65回年次大会, Mar. 2010, Japanese, 日本物理学会, 岡山市, Domestic conferenceGaAs/AlAs超格子における励起子非線形応答の励起光強度依存性Poster presentation
- SPIE Photonics West, Jan. 2010, English, San Francisco, International conferenceVertically-Stacked InAs Quantum Dots for Polarization-Independent Semiconductor Optical AmplifiersOral presentation
- Photonic West 2010, Jan. 2010, English, SPIE, San Francisco, International conferenceVertically-stacked InAs quantum dots for polarization-independent semiconductor optical amplifiersPoster presentation
- SPIE Photonics West, Jan. 2010, English, San Francisco, International conferenceVertical-Geometry All-Optical Switches Based on InAs/GaAs Quantum Dots in a CavityOral presentation
- Photonic West 2010, Jan. 2010, English, SPIE, San Francisco, International conferenceVertical-geometry all-optical switches based on InAs/GaAs quantum dots in a caviPoster presentation
- Abst. Symposium on Surface and Nano Science 2010, Jan. 2010, English, Shizukuishi, International conferenceExciton Fine Structures of Ordered Nitrogen Pairs in GaAs Fabricated by Using Reconstructed Surface[Invited]Invited oral presentation
- 第20回光物性研究会, Dec. 2009, Japanese, 光物性研究会組織委員会, 大阪市, Domestic conference歪み補償積層InAs量子ドットにおける面内励起子移動のバンド内緩和過程への効果Poster presentation
- 第20回光物性研究会, Dec. 2009, Japanese, 光物性研究会組織委員会, 大阪市, Domestic conferenceシアニン色素添加ポリマー薄膜におけるエネルギー移動特性に対するスペクトル重なりの効果Poster presentation
- Workshop on Information, Nano and Photonics 2009, Dec. 2009, English, WINPTECH組織委員会, 神戸市, International conferenceTemperature dependent carrier tunneling in self-assembled InGaAs quantum dots with a dilute nitride quantum-well injectorPoster presentation
- Abstr. Workshop on Information, Nano, and Photonics Technology 2009, Dec. 2009, English, Kobe, International conferenceOptical Nonlinearity of InAs Quantum Dots within a Vertical Cavity Structure for All-Optical Switching DevicesOral presentation
- Workshop on Information, Nano and Photonics 2009, Dec. 2009, English, WINPTECH組織委員会, 神戸市, International conferenceOptical nonlinearity of InAs quantum dots within a vertical cavity structure for all-optical switching devicesPoster presentation
- 第20回光物性研究会, Dec. 2009, Japanese, 光物性研究会組織委員会, 大阪市, Domestic conferenceGaAs薄膜における閉じ込め励起子の双極子モーメントPoster presentation
- 第20回光物性研究会, Dec. 2009, Japanese, 光物性研究会組織委員会, 大阪市, Domestic conferenceGaAs中の窒素等電子束縛励起子における励起子ダイナミクスPoster presentation
- Workshop on Information, Nano and Photonics 2009, Dec. 2009, English, WINPTECH組織委員会, 神戸市, International conferenceEnergy band structure for intermediate band solar cellsPoster presentation
- Abstr. Workshop on Information, Nano, and Photonics Technology 2009, Dec. 2009, English, Kobe, International conferenceEnergy band structure for intermediate band solar cellsOral presentation
- Workshop on Information, Nano and Photonics 2009, Dec. 2009, English, WINPTECH組織委員会, 神戸市, International conferenceEffects of in-plain exciton transfer on intraband relaxation process in stacked InAs quantum dotsPoster presentation
- Abstr. Workshop on Information, Nano, and Photonics Technology 2009, Dec. 2009, English, Kobe, International conferenceEffects of In-Plain Exciton Transfer on Intraband Relaxation Process in Stacked InAs Quantum DotsOral presentation
- Workshop on Information, Nano and Photonics 2009, Dec. 2009, English, WINPTECH組織委員会, 神戸市, International conferenceEffective dipole moments of excitons in GaAs thin filmsPoster presentation
- Workshop on Information, Nano and Photonics 2009, Dec. 2009, English, WINPTECH組織委員会, 神戸市, International conferenceDirect impurity doping into self-assembled InAs/GaAs quantum dotsPoster presentation
- International Symposium on Quantum Nanophotonics and Nanoelectronics, Nov. 2009, English, ISQNN組織委員会, 東京都, Domestic conferenceThermal effects on exciton dynamics in quantum dot chainsOral presentation
- International Symposium for Phosphor Materials 2009 (Phosphor Safari ), Nov. 2009, English, Niigata, International conferenceNarrowband Ultraviolet Light Emitting Devices Using Rare-Earth Ions[Invited]Invited oral presentation
- 第70回応用物理学会学術講演会, Sep. 2009, Japanese, 応用物理学会, 富山市, Domestic conference量子ドット埋め込み面型非対称共振器を用いた超高速全光スイッチOral presentation
- 第70回応用物理学会学術講演会, Sep. 2009, Japanese, 応用物理学会, 富山市, Domestic conference量子ドット埋め込み面型共振器光スイッチにおけるサブバンド間緩和の効果Poster presentation
- 第70回応用物理学会学術講演会, Sep. 2009, Japanese, 応用物理学会, 富山市, Domestic conference窒素をデルタドープしたGaAsにおける束縛励起子分子発光Oral presentation
- 第70回応用物理学会学術講演会, Sep. 2009, Japanese, 応用物理学会, 富山市, Domestic conferenceシアニン色素薄膜におけるフェルスター型エネルギー移動による励起子緩和特性の制御Poster presentation
- 第70回応用物理学会学術講演会, Sep. 2009, Japanese, 応用物理学会, 富山市, Domestic conferenceSiダイレクトドーピングしたInAs量子ドットにおけるキャリア補償効果Oral presentation
- 第70回応用物理学会学術講演会, Sep. 2009, Japanese, 応用物理学会, 富山市, Domestic conferenceInAs/GaAs量子ドットの積層構造による端面発光の偏波制御Oral presentation
- 日本物理学会2009年秋季大会, Sep. 2009, Japanese, 日本物理学会, 熊本市, Domestic conferenceGaAs薄膜の励起子非線形光学応答制御における第一パルス光強度依存性Poster presentation
- 日本物理学会2009年秋季大会, Sep. 2009, Japanese, 日本物理学会, 熊本市, Domestic conferenceGaAs中の窒素等電子束縛励起子微細構造におけるポピュレーションPoster presentation
- 第70回応用物理学会学術講演会, Sep. 2009, Japanese, 応用物理学会, 富山市, Domestic conferenceGaAs/AlAs多重量子井戸における励起子非線形光学特性の制御Oral presentation
- 日本物理学会2009年秋季大会, Sep. 2009, Japanese, 日本物理学会, 熊本市, Domestic conferenceGaAs/AlAs多重量子井戸における励起子非線形光学応答の増強Oral presentation
- Abstr. SemiconNano2009, Aug. 2009, English, Anan, International conferenceExciton Polarization Splitting of Nitrogen Pairs in GaAs[Invited]Invited oral presentation
- 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Aug. 2009, English, EDISON組織委員会, Montpellier, International conferenceEnhancement of optical nonlinearity by spatially expanded excitons in GaAs/AlAs multiple quantum wellsOral presentation
- Abstr. 14th International Conference on Modulated Semiconductor Structures, Jul. 2009, English, Kobe, International conferenceSpatial Coherence Effect on Transient Response of Confined Excitons in GaAs Thin FilmsOral presentation
- 14th International Conference on Modulated Semiconductor structures, Jul. 2009, English, MSS組織委員会, 神戸市, International conferenceSpatial coherence effect on transient response of confined excitons in GaAs thin filmsPoster presentation
- Abstr. 14th International Conference on Modulated Semiconductor Structures, Jul. 2009, English, Kobe, International conferenceResonant Enhancement of Excitonic Photoluminescence via Biexciton Process in Stacked InAs Quantum DotsOral presentation
- 14th International Conference on Modulated Semiconductor structures, Jul. 2009, English, MSS組織委員会, 神戸市, International conferenceResonant enhancement of excitonic photoluminescence via biexciton process in stacked InAs quantum dotsPoster presentation
- 14th International Conference on Modulated Semiconductor structures, Jul. 2009, English, MSS組織委員会, 神戸市, International conferencePolarization controlled emission from stacked InAs quantum dotsPoster presentation
- Abstr. 14th International Conference on Modulated Semiconductor Structures, Jul. 2009, English, Kobe, International conferencePolarization controlled emission from electronically coupled stacked InAs quantum dotsOral presentation
- 第28回電子材料シンポジウム, Jul. 2009, Japanese, 電子材料シンポジウム運営委員会, 大津市, Domestic conferenceMultiband optical absorption in stacked InAs quantum dotsPoster presentation
- 第28回電子材料シンポジウム, Jul. 2009, Japanese, 電子材料シンポジウム運営委員会, 大津市, Domestic conferenceMagnetic-field control of the exciton fine polarization splitting of nitrogen pair centers in GaAsPoster presentation
- 14th International Conference on Modulated Semiconductor structures, Jul. 2009, English, MSS組織委員会, 神戸市, International conferenceMagnetic-field control of exciton fine structure splitting in nitrogen -doped GaAsOral presentation
- Abstr. 14th International Conference on Modulated Semiconductor Structures, Jul. 2009, English, Kobe, International conferenceMagnetic-Field Control of Exciton Fine Structure Splitting in Nitrogen Delta-Doped GaAsOral presentation
- Abstr. Internationa Symposium on Carbon Nanotube Nanoelectronics, Jul. 2009, English, Matsushima, International conferenceField Emission Characteristics of Carbon Nanofiber NanocompositesOral presentation
- Abstr. 14th International Conference on Modulated Semiconductor Structures, Jul. 2009, English, Kobe, International conferenceAll-Optical Switching Using InAs GaAs Quantum Dots within a Vertical Cavity StructureOral presentation
- 14th International Conference on Modulated Semiconductor structures, Jul. 2009, English, MSS組織委員会, 神戸市, International conferenceAll-optical switching using InAs/GaAs quantum dots within a vertical cavity structuPoster presentation
- 第56回応用物理学関係連合講演会, Mar. 2009, Japanese, 日本応用物理学会, つくば市, Domestic conference量子ドット埋め込み面型共振器構造を用いた超高速全光スイッチOral presentation
- 第56回応用物理学関係連合講演会, Mar. 2009, Japanese, 日本応用物理学会, つくば市, Domestic conference窒素をデルタドープしたGaAs における等電子束縛励起子微細構造の磁場制御Oral presentation
- 第56回応用物理学関係連合講演会, Mar. 2009, Japanese, 日本応用物理学会, つくば市, Domestic conference高密度積層量子ドットにおける発光増強機構Oral presentation
- Proc. 20th International Conference on Indium Phosphide and Related Materials, Mar. 2009, English, Newport Beach, International conferenceQuantum Dots in a Vertical Cavity for All-Optical Switching DevicesOral presentation
- 第56回応用物理学関係連合講演会, Mar. 2009, Japanese, 日本応用物理学会, つくば市, Domestic conferenceInAs 量子ドットの積層構造制御と発光特性Oral presentation
- 第56回応用物理学関係連合講演会, Mar. 2009, Japanese, 日本応用物理学会, つくば市, Domestic conferenceGaAs薄膜における励起子過渡応答に対する空間コヒーレンス効果Oral presentation
- Abstr. 15th International Symposium on Intercalation Compounds, Mar. 2009, English, Beijing, International conferenceControl of Exciton Fine Structure of Nitrogen Nanospace in GaAsOral presentation
- 2009International conference on solid State Devices and Materials, 2009, English, miyagi, International conferenceQuantum Dots in a Vertical Cavity for All‐Optical Switching DevicesOral presentation
- ナノ学会ナノ構造・物性部会 第1回研究会, Jan. 2009, Japanese, ナノ学会, 神戸市, Domestic conference超高速全光スイッチに向けた励起子光学非線形応答制御Oral presentation
- 第19回光物性研究会, Dec. 2008, Japanese, 光物性研究会組織委員会, 大阪市, Domestic conference積層超高密度量子ドットの発光特性に対する3次元的結合効果Poster presentation
- 第19回光物性研究会, Dec. 2008, Japanese, 光物性研究会組織委員会, 大阪市, Domestic conferenceシアニン色素添加ポリマー薄膜における励起子緩和時間の制御Poster presentation
- Abstr. 8th International Conference on Nano-Molecular Electronics 2008, Dec. 2008, English, Kobe, International conferenceSide Electron Emission Device Using A Composite of Carbon Nanofibers and AluminumPoster presentation
- Abstr. The IUMRS International Conference in Asia, Dec. 2008, English, Nagoya, International conferenceNarrowband ultraviolet field-emission device using Gd-doped AlN[Invited]Invited oral presentation
- 第19回光物性研究会, Dec. 2008, Japanese, 光物性研究会組織委員会, 大阪市, Domestic conferenceGaAs 薄膜における励起子ポラリトン伝播効果Poster presentation
- 第69回応用物理学会学術講演会, Sep. 2008, Japanese, 日本応用物理学会, 春日井市, Domestic conference積層量子ドットにおける励起子発光強度に対する電子間結合効果Oral presentation
- 第69回応用物理学会学術講演会, Sep. 2008, Japanese, 日本応用物理学会, 春日井市, Domestic conference原子層窒素ドーピングによるInAs 量子ドットからのIn 偏析制御Poster presentation
- 第69回応用物理学会学術講演会, Sep. 2008, Japanese, 日本応用物理学会, 春日井市, Domestic conference原子層窒化InAs 量子ドットにおける励起子緩和時間の制御Poster presentation
- 日本物理学会2008年秋季大会, Sep. 2008, Japanese, 日本物理学会, 盛岡市, Domestic conferenceGaAs 薄膜における励起子ポラリトン伝播効果の膜厚依存性Oral presentation
- 第69回応用物理学会学術講演会, Sep. 2008, Japanese, 日本応用物理学会, 春日井市, Domestic conferenceGaAs 薄膜における閉じ込め励起子の密度制御Oral presentation
- 日本物理学会2008年秋季大会, Sep. 2008, Japanese, 日本物理学会, 盛岡市, Domestic conferenceGaAs 薄膜における超高速励起子密度制御Poster presentation
- Abstr. 15th International Conference on Molecular Beam Epitaxy, Aug. 2008, English, Vancouver, International conferenceSelective Impurity Doping into InAs Quantum Dots by Controlling the Self-Assembled ProcessOral presentation
- Abstr. 15th International Conference on Molecular Beam Epitaxy, Aug. 2008, English, Vancouver, International conferenceInfluence of Indium Segregation on Optical Properties in InAs/GaAs Quantum DotsOral presentation
- 15th International Conference on Molecular Beam Epitaxy, Aug. 2008, English, MBE国際会議組織委員会, Vancouver, International conferenceInfluence of indium segregation on optical properties in InAs/GaAs quantum dotsPoster presentation
- Abstr. Third International Conference on Optical, Optoelectronic Materials and Applications, Jul. 2008, English, Edmonton, International conferenceTransient Response in Negative Time Delay due to Pulse Propagation in GaAs Thin FilmsOral presentation
- Third International Conference on Optical, Optoelectronic and Photonic Materials and Applications, Jul. 2008, English, ICOOPMA組織委員会, Edmonton, International conferenceTransient reflectivity response with negative time delay caused by femtosecond pulse propagation in GaAs thin filmsPoster presentation
- 第27回電子材料シンポジウム, Jul. 2008, Japanese, EMS組織委員会, 伊豆長岡, International conferencePropagation effect on transient response of excitons confined in GaAs thin filmsPoster presentation
- Third International Conference on Optical, Optoelectronic and Photonic Materials and Applications, Jul. 2008, English, ICOOPMA組織委員会, Edmonton, International conferenceLengthening of photoluminescence decay time owing to expansion of electron envelope functions in stacked quantum dotsPoster presentation
- Abstr. Third International Conference on Optical, Optoelectronic Materials and Applications,, Jul. 2008, English, Edmonton, International conferenceLengthening of Exciton Lifetime owing to Expansion of Electron Envelope Functions in Stacked Quantum DotsPoster presentation
- 第27回電子材料シンポジウム, Jul. 2008, Japanese, EMS組織委員会, 伊豆長岡, International conferenceGrowth and characterization of double-stacked InAs self-assembled quantum dots for polarization control of edge emissionPoster presentation
- Abstr. The 15th International Conference on Luminescence and Optical Spectroscopy of Condenced Matter, Jul. 2008, English, Lyon, International conferenceFine structure of bound excitons in nitrogen-doped GaAsOral presentation
- Abstr. Third International Conference on Optical, Optoelectronic Materials and Applications, Jul. 2008, English, Edmonton, International conferenceExciton Response Controlled by Introducing a Spacer Layer in Nitrided InAs Quantum DotsOral presentation
- Third International Conference on Optical, Optoelectronic and Photonic Materials and Applications, Jul. 2008, English, ICOOPMA組織委員会, Edmonton, International conferenceExciton response controlled by introducing a spacer layer in nitrided InAs quantum dotsPoster presentation
- Abstr. Carbon, Jul. 2008, English, Nagano, International conferenceBright flexible field emission display device using Carbon nanofiber nanosompositesOral presentation
- Abstr. The 15th International Conference on Luminescence and Optical Spectroscopy of Condenced Matter, Jul. 2008, English, Lyon, International conferenceAnisotropic Linear Polarization Luminescence in CdTe/CdMnTe Quantum WiresOral presentation
- Abstr. 8th International Conference on Excitonic Process in Condensed Matter, Jun. 2008, English, Kyoto, International conferenceOptical Control of Residual Excitons for Ultrafast Nonlinear Response in GaAs Thin FilmsOral presentation
- 8th International Conference on Excitonic Processes in Condensed Matter, Jun. 2008, English, EXCON組織委員会, 京都市, International conferenceOptical control of residual excitons for ultrafast nonlinear response in GaAs thin filmsOral presentation
- Abstr. 8th International Conference on Excitonic Process in Condensed Matter, Jun. 2008, English, Kyoto,, International conferenceNear-Field Photoluminescence of Exciton Magnetic Polarons in CdTe/Cd0.75Mn0.25Te Quantum WiresOral presentation
- Proc. 20th International Conference on Indium Phosphide and Related Materials, May 2008, English, Paris, International conferenceExciton Fine Structure of Nitrogen Isoelectronic CenterOral presentation
- Abstr. International Conference on Physics of Light-Matter Coupling in Nanostructures, Apr. 2008, English, Tokyo, International conferenceTailor-Made Optical Properties of InAs Quantum Dots by Controlling Indium SegregationOral presentation
- Abstr. 3rd International Laser, Light-Wave and Microwave Conference, Apr. 2008, English, Yokohama, International conferenceOptical Cancellation of Exciton Population in GaAs Thin FilmsOral presentation
- Third International Laser, Light-Wave and Microwave Conference, Apr. 2008, English, ILLMC組織委員会, 横浜市, International conferenceOptical cancellation of exciton population in GaAs thin filmsOral presentation
- 第55回応用物理学関係連合講演会, Mar. 2008, Japanese, 日本応用物理学会, 船橋市, Domestic conference端面発光偏波制御を目指したInAs 量子ドット積層構造の作製Oral presentation
- 第55回応用物理学関係連合講演会, Mar. 2008, Japanese, 日本応用物理学会, 船橋市, Domestic conference積層量子ドットにおける励起子振動子強度の温度依存性Oral presentation
- 第55回応用物理学関係連合講演会, Mar. 2008, Japanese, 日本応用物理学会, 船橋市, Domestic conferenceGaAs薄膜における閉じ込め励起子の超高速非線形応答の励起光強度依存性Oral presentation
- 日本物理学会第63回年次大会, Mar. 2008, Japanese, 日本物理学会, 東大阪市, Domestic conferenceGaAs 薄膜における複数準位励起下での閉じ込め励起子の過渡反射スペクトルPoster presentation
- 第18回光物性研究会, Dec. 2007, Japanese, 光物性研究会組織委員会, 大阪市, Domestic conferenceスペクトル分解反射型ポンプ・プローブ法によるGaAs薄膜中閉じ込め励起子の過渡応答測定Poster presentation
- MRS Fall Meeting, Nov. 2007, English, Boston, International conferenceA Specimen Preparation Technique for 3D Charactreization of Nano Materials at Specific-Site Using FIB-STEM/TEM SystemOral presentation
- International Symposium on Compound Semiconductors, Oct. 2007, English, Kyoto, International conferenceThree-Dimensional Structure of A Single InAs/GaAs Self-Assembled Quantum Dot Observed by Electron TomographyOral presentation
- International Symposium on Compound Semiconductors, Oct. 2007, English, Kyoto, International conferenceExciton Fine Sructure of Isoelectronic Centers in Nitrogen Doped GaAsPoster presentation
- International Symposium on Compound Semiconductors, Oct. 2007, English, Kyoto, International conferenceAnisotropic Zeeman Effect in CdTe/CdMnTe Quantum WiresPoster presentation
- 6th Internaltiona Symposium on Atomic Level Characterizations for New Materials and Devices, Oct. 2007, English, Kanazawa, International conference3D Characterization of A Single InAs Quantm DotPoster presentation
- 第68回応用物理学会学術講演会, Sep. 2007, Japanese, 日本応用物理学会, 札幌市, Domestic conferenceGaAs量子ドットの発光偏光特性Oral presentation
- 2007 Japan-Germany Nanophotonics Seminar, Sep. 2007, English, Yonago, International conferenceControl of Optical Polarization in Quantum Dots[Invited]Invited oral presentation
- International Conference on II-VI Compounds, Sep. 2007, English, Jeju, International conferenceAnisotropic Magnetic-Field Evolution of Radiative Recombination Lifetime in CdTe/CdMnTe Quantum WiresOral presentation
- 第26回電子材料シンポジウム 論文集、pp. 157-158 G4, Jul. 2007, Japanese, EMS組織委員会, 大津市, Domestic conferenceOptical Emission and Dynamics from Coupled States in Stacked Quantum DotsPoster presentation
- 16th International Conference on Dynamical Processes in Excited States of Solids, Jun. 2007, English, DPC組織委員会, Segovia, Spain, International conferencePhotoluminescence dynamics of coupled quantum dotsPoster presentation
- Proc. 19th International Conference on Indium Phosphide and Related Materials, May 2007, English, Matsue, International conferenceReal Time Probing of Self-Assembling Process Steps in InAs/GaAs Quantum Dot GrowthPoster presentation
- 19th International Conference on Indium Phosphide and Related Materials, May 2007, English, Matsue, International conferenceMultidirectional Transmission Electron Microscope Observation of a Single InAs/GaAs Self-Assembled Quantum DotOral presentation
- 19th International Conference on Indium Phosphide and Related Materials, May 2007, English, IPRM組織委員会, Matsue, Japan, International conferenceControl of Optical Emission from Coupled Excitonic States in Quantum Dot Superlattice StructuresPoster presentation
- 第54回応用物理学関係連合講演会, Mar. 2007, Japanese, 青山学院大学, Domestic conference結合量子ドットの発光ダイナミクスOral presentation
- International Workshop on Nitride Semiconductors 2006, Oct. 2006, English, Kyoto, Japan, International conferenceBright Electron Emission from Si-doped AlN Thin FilmsPoster presentation
- The 16th International Microscopy Congress, Sep. 2006, English, Sapporo, International conferenceHigh-Resolutioon Transimission Electron Microscope Study on Nitrided InAs/GaAs Quantum DotsOral presentation
- The 14th International Conference on Molecular Beam Epitaxy, Sep. 2006, English, Tokyo, International conferenceAtomically Controlled Doping of Nitrogen on GaAs(001) SurfacesOral presentation
- 28th International Conference on the Physics of Semiconductors, Jul. 2006, English, Vienna, International conferenceMagnetic-Field Evolution of Valence-Band States in One-Dimensional Diluted Magnetic SemiconductorsPoster presentation
- 28th International Conference on the Physics of Semiconductors, Jul. 2006, English, Vienna, International conferenceConfined Electronic Structures of Nitrogen Isoelectronic Centers in GaAs Grown by Atomically Controlled Doping TechniquePoster presentation
- 7th International Conference on Excitonic Process in Condensed Matter, Jun. 2006, English, Winston-Salem, International conferenceExcitonic State and Magnetic Effects in CdTe/Cd(Mg,Mn)Te Quantum Wires[Invited]Invited oral presentation
- The 14th International Conference on Molecular Beam Epitaxy, Jun. 2006, English, Tokyo, International conferenceEmission-Wavelength Extension of Nitrided InAs/GaAs Quantum Dots with Different SizesOral presentation
- 4th International Conference on Semiconductor Quantum Dots 2006, May 2006, English, Chamonix, International conferencePolarization Insensitive Optical Gain of Columnar Quantum DotsPoster presentation
- CLEO/QELS, May 2006, English, Long Beach, International conferenceMagneti-Field Sensitive Polarization Anisotropy in One-Dimensional Diluted Magnetic SemiconductorsOral presentation
- Proc. 18th International Conference on Indium Phosphide and Related Materials, May 2006, English, Princeton, International conferenceEmission-Wavelength Extension of InAs/GaAs Quantum Dots by Controlling Lattice-Mismatched StrainOral presentation
- 第52回応用物理学関係連合講演会,30a-YL-12, Mar. 2005, Japanese, 応用物理学会, 埼玉大学, Domestic conference低温成長AIMを用いた有機電界放出発光素子Oral presentation
- 第52回応用物理学関係連合講演会,30a-ZM-1, Mar. 2005, Japanese, 応用物理学会, 埼玉大学, Domestic conference原子層窒化によるInAs/GaAs量子ドット発光の長波長化-量子ドット発光の窒化条件依存性-Oral presentation
- 第52回応用物理学関係連合講演会,30a-ZM-3, Mar. 2005, Japanese, 応用物理学会, 埼玉大学, Domestic conference原子層窒化InAs/GaAs量子ドットの長波長化発光メカニズムOral presentation
- 第52回応用物理学関係連合講演会,30a-ZM-8, Mar. 2005, Japanese, 応用物理学会, 埼玉大学, Domestic conferenceInAs/GaAsコラム量子ドットの発光強度の積層数依存性Oral presentation
- 第52回応用物理学関係連合講演会, 2005, Japanese, 応用物理学会, 埼玉大学, Domestic conference低温成長AIN薄膜を用いた有機電界放出型発光素子Oral presentation
- International Symposium on Compound Semiconductors 2005, 2005, English, Rust, International conferenceValence-Band Mixing Induced by sp-d Exchange Interaction in CdMnTeQuantum WirsOral presentation
- International Conference on Quantum Electronics 2005 and the Pacific Rim Conference on Laser and Electro-Optics 2005, 2005, English, Tokyo, International conferenceValence-Band Mixing in CdTe/CdMnTeNano-Wire Structures in Magnetic FieldOral presentation
- 2005 International Conference on Solid State Device and Materials, 2005, English, Kobe, International conferenceLong-Wavelength Emission from Strain Controlled InAs/GaAs Self-Assembled Quantum DotsOral presentation
- International Conference on Materials for Advanced Technologies 2005, 2005, English, Singapore, International conferenceInGaAs Capping Layer Caused Modification to the Optical Properties of InAs Quantum DotPoster presentation
- International Symposium on Quantum Dots and Photonic Crystal 2005, 2005, English, Tokyo, International conferenceEmission-Wavelength Extension in Nitrided InAs/GaAs Self-Assembled Quantum DotsPoster presentation
- International Conference on Quantum Electronics 2005 and the Pacific Rim Conference on Laser and Electro-Optics 2005, 2005, English, Tokyo, International conferenceBound-Exciton Luminescence from Nitrogen Doped GaAs Grown by Site-Controlled Doping Technique[Invited]Invited oral presentation
- Extended Abstr. International Symposium on Quantum Dots and Photonic Crystal 2005,Tokyo, Sep. 2004, EnglishThermal Carrier Activation Process in InGaAs Capped InAs Quantum Dots
- 第65回応用物理学会学術講演会,1a-P2-4, Sep. 2004, Japanese, 応用物理学会, 東北学院大学, Domestic conference原子層窒化によるInAs量子ドット発光の長波長化を波長制御Oral presentation
- Extended Abstr. 2004 International Conference on Solid State Device and Materials (p.7-3), Sep. 2004, English, Tokyo, Domestic conferenceOptical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier.Oral presentation
- 第65回応用物理学会学術講演会,シンポジウム「量子ドットの将来像と実現のためのマイルストーン」, Sep. 2004, Japanese, 応用物理学会, 東北学院大学, Domestic conferenceInAs量子ドット表面の窒化による成長界面の制御Oral presentation
- 第65回応用物理学会学術講演会、シンポジウム「量子ドットの将来像と実現のためのマイルストーン」, Sep. 2004, Japanese, 応用物理学会, 仙台, Domestic conferenceInAs量子ドット成長のその場RDS評価と界面制御Oral presentation
- 第65回応用物理学会学術講演会,1a-P1-3, Sep. 2004, Japanese, 応用物理学会, 東北学院大学, Domestic conferenceGsAs(001)に挿入した窒素原子層の創るisoelectronic trapからの狭線幅発光Oral presentation
- 日本物理学会2004年秋季大会,14aYC-3, Sep. 2004, Japanese, 日本物理学会, 青森大学, Domestic conferenceCdTe/CdMnTe量子細線における励起子磁気ポーラロンの異方的なエネルギー緩和特性Oral presentation
- 14th International Conference on Crystal Growth.(T02-1-4), Aug. 2004, English, Grenoble, International conferenceAnisotropic Exchange Interaction caused by Hole-Spin Reorientation in (CdTe)0.5(CdMnTe)0.5 Tilted Superlattices Grown in CdMgTe(001) Visinal Surface.Oral presentation
- The 2004 International Conference on Ultrafast Phenomena., Jul. 2004, English, Niigata, Domestic conferenceUltrafast Anisotropic Processes of Exciton Magnetic Polarons in CdTe/CdMnTe Quantum Wires.Oral presentation
- 27th International Conference on the Physics and Semicinductors.(H5-95), Jul. 2004, English, Flagstaff Arizona, International conferenceOrder-Parameter Dependence of Sponteneous Electron Accumulation at GaInP/GaAs Studied by Raman-Scattering and Photoluminescence.Oral presentation
- 27th International Conference on the Physics and Semicinductors.(J5-67), Jul. 2004, English, Flagstaff Arizona, International conferenceHole-Spin Reorentation in (CdTe)0.5 Tiltid Superlattices Grown on CdMgTe(001) Visinal Surface.Oral presentation
- 23th Electronic Materials Symposium, Jul. 2004, English, 未記入, Izu, Domestic conferenceAnisotropic Magneto-Optical Effects in CdTe/CdMnTe Tilted Superlattices Grown on CdTe0.74Mg0.26Te(001)Vicinal SurfaceOral presentation
- 23th Electronic Materials Symposium, Jul. 2004, English, 未記入, Izu, Domestic conference1.3 micro-m Emission from Nitridized InAs Quantum DotOral presentation
- Abstr.3rd International Conference on Semiconductor Quantum Dots,THP8,Banff, May 2004, EnglishTemperature-Optimized Nitridation of Self-Assembled InAs/GaAs Quantum Dots for Long-Wavelength Emission
- Proc. 16th International Conference on Indium Phosphide and Related Materials.(pp. 640-642), May 2004, English, Kagoshima, Domestic conferenceNitridized InAs/GaAs Self-Assembled Quantum Dots for Optical Communication Wavelength.Oral presentation
- Abstr. European Material Research Society (1337), May 2004, English, Strasburg, International conferenceNarrow Bandwidth Photoluminescence Lines from Nitrogen Doped GaAs Grown by Atomically Controlled Doping.Oral presentation
- Abstr. 3rd International Conference on Semiconductor Quantum Dots, TP15, May 2004, English, Banff, International conferenceCapping Layer Induced Optical Polarization Control of InAs/GaAs Quantum Dots.Oral presentation
- 第51回応用物理学関係連合講演会 (30p-YN-13), Mar. 2004, Japanese, 応用物理学会, 東京工科大学, Domestic conference低温成長AIN薄膜の電子エミッション特性に及ぼすSiドープの影響Oral presentation
- 第51回応用物理学関係連合講演会 (30p-YG-17), Mar. 2004, Japanese, 応用物理学会, 東京工科大学, Domestic conference原子層窒化によるInAs量子ドット発光の長波長化Oral presentation
- 第51回応用物理学関係連合講演会 (28p-ZK-10), Mar. 2004, Japanese, 応用物理学会, 東京工科大学, Domestic conferenceCdTe/CdMnTeナノワイヤ構造におけるZeemanシフトの異方性と正孔スピンの再配列Oral presentation
- 日本物理学会第59回年次大会 29aYF-12, Mar. 2004, Japanese, 日本物理学会, 九州大学, Domestic conferenceCdTe/CdMnTeナノワイヤにおける磁気ポーラロン形成Oral presentation
- 日本物理学会第59回年次大会 29aYF-11, Mar. 2004, Japanese, 日本物理学会, 九州大学, Domestic conferenceCdTe/CdMnTeナノワイヤにおけるホールスピン配向の面内磁場異方性Oral presentation
- 平成15年度材料学会半導体エレクトロニクス部門委員会研究会, Jan. 2004, Japanese, 神戸大学ベンチャービジネスラボラトリー, Domestic conference磁性イオンを希薄ドープした半導体量子ナノワイヤ中のスピン制御Oral presentation
- Pre-Conference of IEEE International Semiconductor Laser Conference 2004, IEICE LQE/OPE Technical Meeting., Dec. 2003, Japanese, Kobe, Domestic conference量子ドットの偏光制御とSOAへの応用Oral presentation
- 第14回光物性研究会研究会 pp.339-342, Dec. 2003, Japanese, 光物性研究会, 大阪市立大学, Domestic conference窒素を希薄ドープしたGaAsからの狭線幅発光Oral presentation
- 第14回光物性研究会研究会 pp.263-266, Dec. 2003, Japanese, 光物性研究会, 大阪市立大学, Domestic conferenceCdTe/CdMnTe量子細線における磁気ポーラロン形成Oral presentation
- 第14回光物性研究会研究会 pp.259-262, Dec. 2003, Japanese, 光物性研究会, 大阪市立大学, Domestic conferenceCdTe/CdMnTe量子細線における交換相互作用の面内異方性Oral presentation
- Abstr. International Symposium on Quantum Dots and Photonic Crystals 2003, P-15, Nov. 2003, English, Tokyo, Domestic conferenceOptical Properties of Nitridized InAs Quantum Dots.Oral presentation
- Abstr. International Symposium on Quantum Dots and Photonic Crystals 2003, P-19, Nov. 2003, English, Tokyo, Domestic conferenceOptical Polarization Control in Edge-Emitting InAs/GaAs Quantum Dot.Oral presentation
- 日本物理学会2003年秋期大会, 21aTH-3, Sep. 2003, Japanese, 日本物理学会, 宮崎ワールドコンベンションセンター, Domestic conference微傾斜基盤上のCdTe/CdMnTe分数層超格子における交換相互作用の異方性と量子細線特性Oral presentation
- Extended Abstr. 2003 International Conference on Solid State Device and Materials., Sep. 2003, English, Tokyo, Domestic conferenceControl of InGaAs Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots.Oral presentation
- 第64回応用物理学会学術講演会 30p-G-16, Aug. 2003, Japanese, 応用物理学会, 福岡, Domestic conference低温成長AlSiN薄膜からの高効率電子放出Oral presentation
- 第64回応用物理学会学術講演会 1p-K-6, Aug. 2003, Japanese, 応用物理学会, 福岡, Domestic conference窒素をデルタドープしたGaAs(001)からの狭線幅発光Oral presentation
- 第64回応用物理学会学術講演会 31p-K-15, Aug. 2003, Japanese, 応用物理学会, 福岡, Domestic conference原子層窒化によるInAs量子ドット発光の長波長化Oral presentation
- 第64回応用物理学会学術講演会 31p-K-14, Aug. 2003, Japanese, 応用物理学会, 福岡, Domestic conferenceInAs量子ドットの端面発光における偏光特性の制御Oral presentation
- 第64回応用物理学会学術講演会 31p-ZF-3, Aug. 2003, Japanese, 応用物理学会, 福岡, Domestic conferenceCdTe/CdMgTe量子細線におけるスピン緩和特性Oral presentation
- 第64回応用物理学会学術講演会 2a-ZL-8, Aug. 2003, Japanese, 応用物理学会, 福岡, Domestic conferenceCdTe/(Cd,Mn)Te量子細線中の磁気ポーラロン形成Oral presentation
- Abstr. The 10th International Workshop on Femtosecond Technology, WP-26, p.120, Jul. 2003, English, Tsukuba, Domestic conferenceSpin Relaxiation Process in CdTe/CdMgTe Quantum WiresOral presentation
- Proc. 22th Electronic Materials Symposium, H14, p.277-278, Jul. 2003, English, Moriyama, Domestic conferencePolarization Controle of Cleaved-Edge Photoluminescence from InAs Quantum Dots Capped by InGaAs.Oral presentation
- Proc. 22th Electronic Materials Symposium, H13, pp.275-276, Jul. 2003, English, Moriyama, Domestic conferencePhotoluminescence from Postnitridized InAs Quantum Dots.Oral presentation
- Proc. 22th Electronic Materials Symposium, I6, p.291-292, Jul. 2003, English, Moriyama, Domestic conferenceObservation of Anisotropic Giant Magneto-Optical Effects in CdTe/CdMnTe Quantum Wires.Oral presentation
- Abstr. The 10th International Workshop on Femtosecond Technology, WP-25, p.119, Jul. 2003, English, Tsukuba, Domestic conferenceNarrow Bandwidth Photoluminescence from Nitrogen-Delta Doped GaAs.Oral presentation
- Abstr. The 11th International Conference on Modulated Semiconductor Structures, Jul. 2003, English, Nara, Domestic conferenceInAsN Quantum Dots Fabricated by Posnitridation of InAs.Oral presentation
- Proc. 22th Electronic Materials Symposium, G12, pp.241-242, Jul. 2003, English, Moriyama, Domestic conferenceHighly Efficient Field Emission from Low Temperature Grown AlSiN Thin Film.Oral presentation
- Abstr. The 10th International Workshop on Femtosecond Technology, TB-6, p.67, Jul. 2003, English, Tsukuba, Domestic conferenceExcitation Intensity Dependence of Edge-Emitting Photoluminescence Properties in InAs Quantum Dots.Oral presentation
- Proc. 23th Electronic Materials Symposium., Jul. 2003, English, Izu, Domestic conferenceAnisotropic Magneto-Optical Effects in CdTe/CeMnTe Tilted Superlattices Grown on CdTe0,74Mg0.26Te(001) Vicinal Surface.Oral presentation
- Abstr. The 11th International Conference on Modulated Semiconductor Structures, Jul. 2003, English, 未記入, Nara., Domestic conferenceAnisotropic Exchange Interaction in CdTe/CdMnTe Quantum Wires.Oral presentation
- Proc. 23th Electronic Materials Symposium., Jul. 2003, English, Izu, Domestic conference1.3 Micro-m Emission from Mitridized InAs Quantum Dot.Oral presentation
- Abstr.2003 Conference on Lasers and Electro-Optics, p.116, Jun. 2003, English, Baltimore, International conferenceWideband Polarization Insensitivity in Quantum Dot Optical Amplifier.Oral presentation
- Proc. 15th International Conference on Indium Phosphide and Related Materials., May 2003, English, Santa Barbara, International conferenceSelective Characterization of Interface Electric Field in GaAs/GaInP Heterojunction Bipolar Transistor by Fourier Transformed Photoreflectance.Oral presentation
- ナノ学会 PpⅡー7, May 2003, English, ナノ学会, 神戸大学, Domestic conferencePhotoluminescence Polarization Properties and Electronic States in InAs/GaAs Self-Assembled Quantum Dots.Oral presentation
- 第50回応用物理学関係連合講演会 (29a-YAー11), Mar. 2003, Japanese, 応用物理学会, 神奈川大学, Domestic conference歪キャップ層導入によるInAs量子ドットの端面発光偏光特性の制御Oral presentation
- 第50回応用物理学関係連合講演会 (29p-V-7), Mar. 2003, Japanese, 応用物理学会, 神奈川大学, Domestic conference高濃度SiドープAINの基礎吸収端構造Oral presentation
- 第50回応用物理学関係連合講演会 (29a-ZH-8), Mar. 2003, Japanese, 応用物理学会, 神奈川大学, Domestic conferenceCdTe/CdMgTe量子細線における磁気工学特性の異方性Oral presentation
- 第50回応用物理学関係連合講演会, 2003, Japanese, 応用物理学会, 神奈川大学, Domestic conference歪キャップ層導入によるInAs量子ドットの端面発光偏光特性の制御Others
- 第50回応用物理学関係連合講演会, 2003, Japanese, 応用物理学会, 神奈川大学, Domestic conference高濃度SiドープAINの基礎吸収端構造Others
- 第50回応用物理学関係連合講演会, 2003, Japanese, 応用物理学会, 神奈川大学, Domestic conferenceCdTe/CdMgTe量子細線における磁気光学特性の異方性Others
- 応用物理学会May 1985 - Present
- 日本物理学会Oct. 1986 - Dec. 2021
- Spring-8利用者懇談会正会員May 1993 - Mar. 1999
- 日本真空協会Jul. 1993 - Dec. 1997
- 日本金属学会Jul. 1992 - Dec. 1997
- 日本学術振興会, 科学研究費助成事業 基盤研究(B), 基盤研究(B), 神戸大学, Apr. 2023 - Mar. 2026ヘテロ界面に挿入した量子ドットによる赤外増感型光電変換の実現
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A), Grant-in-Aid for Scientific Research (A), Kobe University, Apr. 2019 - Mar. 2023
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Challenging Research (Exploratory), Challenging Research (Exploratory), Kobe University, Jul. 2020 - Mar. 2022
- 学術研究助成基金助成金/国際共同研究加速基金(国際共同研究強化(B)), Oct. 2018 - Mar. 2021, Principal investigatorCompetitive research funding
- 学術研究助成基金助成金/挑戦的研究(萌芽), Jun. 2018 - Mar. 2020, Principal investigatorCompetitive research funding
- 科学研究費補助金/基盤研究(B), Apr. 2016 - Mar. 2019, Principal investigatorCompetitive research funding
- 学術研究助成基金助成金/挑戦的萌芽研究, Apr. 2015 - Mar. 2017, Principal investigatorCompetitive research funding
- 特別研究員奨励費, Apr. 2014 - Mar. 2017, Principal investigatorCompetitive research funding
- 研究成果展開事業(マッチングプランナー プログラム), 2016, Principal investigator水銀を使わないシート型殺菌用紫外光源の開発Competitive research funding
- 学術研究助成基金助成金/挑戦的萌芽研究, Apr. 2013 - Mar. 2015, Principal investigatorCompetitive research funding
- 科学研究費補助金/基盤研究(B), Apr. 2012 - Mar. 2015, Principal investigatorCompetitive research funding
- 科学技術振興機構, 研究成果展開事業 マッチングプランナープログラム 探索試験, 2015, Principal investigatorマッチングプランナー「水銀を使わないシート型殺菌用紫外光源の開発」Competitive research funding
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A), Grant-in-Aid for Scientific Research (A), The University of Tokyo, 2010 - 2012We have studied the epitaxial growth and characteristics of InAs/GaAsSb type-II quantum dot (QD) superlattice and used it to fabricate an intermediate band (IB) solar cell, which is expected to exhibit a high efficiency. First, we have succeeded to observe a clear photocurrent production by 2-step photoabsorption process at room temperature owing to longer carrier lifetimes in type-II QDs. This effect has resulted in an improvement of short-circuit current and efficiency in IB solar cells. Second, we have studied the carrier dynamics in QD structures by ultra-fast optical spectroscopy and clarified the fundamental carrier relaxation process in direct Si-doped QDs. Third, we have studied the optical modes of emission from QD superlattice structure and showed that TM mode starts to increase in proportion to TE mode for a structure with sub-10nm spacing between QD layers indicating a clear formation of QD superlattice miniband, which is required for IB solar cells.
- 学術研究助成基金助成金/挑戦的萌芽研究, 2011, Principal investigatorCompetitive research funding
- 特別研究員奨励費, 2010, Principal investigatorCompetitive research funding
- 科学研究費補助金/基盤研究(A), 2009Competitive research funding
- 科学研究費補助金/基盤研究(B), 2009, Principal investigatorCompetitive research funding
- 科学研究費補助金/特定領域研究, 2008, Principal investigatorCompetitive research funding
- 科学研究費補助金/特定領域研究, 2008, Principal investigatorCompetitive research funding
- 科学研究費補助金/基盤研究(B), 2007, Principal investigatorCompetitive research funding
- 科学研究費補助金/基盤研究(A), 2006Competitive research funding
- 科学研究費補助金/萌芽研究, 2006Competitive research funding
- 科学研究費補助金/基盤研究(B), 2005Competitive research funding
- 科学研究費補助金/萌芽研究, 2005, Principal investigatorCompetitive research funding
- 科学研究費補助金/基盤研究(B), 2005, Principal investigatorCompetitive research funding
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), Kobe University, 2003 - 2004Recent advance in high-quality self-assembled QDs contributes to the development of new optical devices such as QD semiconductor optical amplifiers (SOAs). For practical applications, control of the polarization property is prerequisite for developing polarization-independent SOAs. To accomplish the polarization insensitive bandedge, we propose a new approach using shape-controlled QDs. In closely stacked Stranski-Krastanov (S-K)-mode InAs QDs, namely, columnar QDs, the height has been successfully controlled, artificially, by stacking the S-K-mode growth layer, which can change the quantum-confinement direction. SOA structures with columnar QDs were grown by molecular beam epitaxy. The islands on each layer were observed to be in contact with each other in the perpendicular direction, so that the stacked island structure, as a whole, becomes columnar in shape. The diameter of the columnar QDs is about 17 nm. The height was controlled by the stacking layer number (SLN). The typical height for the SLN of 8 is about 13 nm. Linear-photoluminescence (PL) polarization spectra were measured from a cleaved, uncoated edge surface of the sample. The TE (TM)-mode PL was measured by setting an analyzer along the in-plane (growth) direction. Polarization insensitivity of semiconductor optical amplifier has been shown to be precisely controlled in closely stacked InAs/GaAs self-assembled quantum dots. The polarization insensitive bandwidth achieved is larger than 40nm. These results demonstrate that wideband polarization insensitivity has been accomplished by controlling QD shape.
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), Kobe University, 2002 - 2003Quantum dots are expected to play a key role in future optical communications due to their advantages in enhancing linear optical gain and nonlinear optical response, as well as ultrafast response speed, which result from the three dimensionally confined electron states. However, quantum dots formed by SK-mode growth have flattened shape much different from the ideal sphere, and this causes polarization sensitiveness, usually being heavily TE-polarized, and also there are no precise understanding of the effect of dot shape on the optical response speed and nonlinearity. In this study, it has been shown from polarization discriminating photoluminescence measurements that the polarization property can be controlled by optimizing the dot shape using columnar dot structure, in which SK-dot layers are stacked. Also it has been shown that the polarization properties are controlled by changing the composition of InGaAs capping layer on InAs dots primarily due to the effect of dot aspect ratio, which is enhanced by the introduction of InGaAs capping layer resulting in TM dominant polarization. This indicates that the polarization insensitiveness, which is one of the most important device characteristics in practical application, can now be controlled by designing the dot shape. Our previous results have demonstrated that quntum dot optical amplifier exhibits ultrafast absorption recovery time in the range of 1-3 ps. Also it has been shown from degenerate four-wave mixing (DFWM) experiments that large size dots show phase relaxation time larger that that for small size dots, indicating the possibility of enhanceing nonlinearity in larger dots. Combining all these results obtained, it is concluded that polarization insensitive, ultarafast and high-nonlinearity optical response can be simultaneously achieved by adopting isotropically shaped, large size dots.
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