Directory of Researchers
| ASAHI Shigeo |  |
| Graduate School of Engineering / Department of Electrical and Electronic Engineering | |
| Associate Professor | |
| Electro-Communication Engineering |
Researcher Profile and Settings
Affiliation
＜Faculty / Graduate School / Others＞
Graduate School of Engineering / Department of Electrical and Electronic Engineering＜Related Faculty / Graduate School / Others＞
Faculty of Engineering / Department of Electrical and Electronic Engineering
Teaching
- Office for the Promotion of International Exchange, 2022, Elements of Mechanics 1
- Office for the Promotion of International Exchange, 2022, Elements of Mechanics 2
- Faculty of Engineering / Department of Electrical and Electronic Engineering, 2022, Practice on Electromagnetic Fields and Waves
Research at Kobe
Research Activities
Research Interests
Research Areas
- Nanotechnology/Materials / Crystal engineering
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering
Committee Memberships
- Mar. 2022 - Feb. 2024, 電子材料シンポジウム（EMS）, 実行委員会 企画展示委員
- Apr. 2023 - Nov. 2023, 36th International Microprocesses and Nanotechnology Conference (MNC2023), Program committee
- Apr. 2022 - Nov. 2022, 第35回マイクロプロセス・ナノテクノロジー国際会議（MNC2022）, 論文委員
- Apr. 2021 - Nov. 2022, International Photovoltaic Science and Engineering Conference, Program committee
- Apr. 2020 - Feb. 2022, 電子材料シンポジウム（EMS）, 実行委員（会場委員）
- Apr. 2021 - Nov. 2021, 34th International Microprocesses and Nanotechnology Conference (MNC2021), Program Committee
- Apr. 2020 - Nov. 2020, 33rd International Microprocesses and Nanotechnology Conference (MNC 2020), Program Committee
- Apr. 2019 - Nov. 2019, 32nd International Microprocesses and Nanotechnology Conference (MNC2019), Program Committee
- Apr. 2017 - Sep. 2019, 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019), Steering Committee
Awards
Sep. 2022 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-XI), Young Researcher Award, Photoluminescence Characteristics of InAs Quantum Dots in the Doubled-heterointerface of AlGaAs/GaAs-based Two-step Photon Up-conversion Solar Cells
Jun. 2020 47th IEEE Photovoltaic Specialists Conference (PVSC47), PVSC 47 Best Student Paper Award, Up-converted photocurrent enhancement in modulation-doped two-step photon up-conversion
Dec. 2015 第26回光物性研究会, 奨励賞
Aug. 2014 日本材料学会半導体エレクトロニクス部門委員会, 平成26年度第1回研究会学生優秀講演賞
Published Papers
- 公益社団法人応用物理学会, Sep. 2023, 応用物理, 92 (9), 550 - 554, Japanese
[Refereed]
Photon upconversion (PU) is a process where an electron is excited from the valence band to the conduction band of a wide-gap semiconductor by the sequential absorption of two or more photons via real states. For example, two-step PU can generate additional photocurrent in the so-called intermediate-band solar cells. In this work, we consider two- and three-step processes; we study multi-step PU in a quantum dot (QD)-based single-junction solar cell with a double-heterointerface structure. The solar cell consists of three different absorber layers: Al0.7Ga0.3As, Al0.3Ga0.7As, and GaAs, which form two heterointerfaces. Just beneath each heterointerface, an InAs/GaAs QD layer was inserted. After band-to-band excitation, electrons accumulate at each heterointerface, and then, below-bandgap photons excite a certain fraction of these electrons above the barrier energy. The photoluminescence spectra of the InAs QDs reveal slightly different QD size distributions at the two heterointerfaces. We show that the external quantum efficiency is improved by additional irradiation with below-bandgap infrared photons, which suggests a multi-step PU process that involves the two heterointerfaces. The dependence of the photocurrent on the infrared excitation power density only shows a superlinear behavior when the GaAs layer is excited but the Al0.3Ga0.7As layer is not. These data demonstrate a multi-step PU process that consists of one intraband transition at each of the two heterointerfaces and one interband transition in GaAs.
AIP Publishing, 28 Mar. 2023, Journal of Applied Physics, 133 (12), 124503 - 124503[Refereed]
Scientific journal
Abstract We elucidate a photocarrier collection mechanism in intermediate band solar cells (IBSCs) with InAs-quantum dots (QDs)-in-an-Al0.3Ga0.7As/GaAs-quantum well structures. When the Al0.3Ga0.7As barrier is excited, the device electrical output can be varied by additional infrared light for the electron intraband optical transition in QDs. The photocurrent in IBSC with a single QDs-in-a-well structure shows a monotonic increase with the intraband-excitation density. Conversely, IBSC with a multilayered QDs-in-a-well structure exhibits a photocurrent reduction when electrons in QDs are optically pumped out. The simultaneously measured photoluminescence spectra proved that the polarity of QD states changes depending on the intraband-excitation density. We discuss the drift and diffusion current components and point out that the hole diffusion current is significantly influenced by carriers inside the confinement structure. Under strong intraband excitations, we consider an increased hole diffusion current occurs by blocking hole-capture in the quantum structures. This causes unexpected photocurrent reduction in the multilayered device.
IOP Publishing, 01 Jul. 2022, Japanese Journal of Applied Physics, 61 (7), 074002 - 074002, English[Refereed]
Scientific journal
The generation of two-photon photocurrent plays an essential role in realizing intermediate-band solar cells (IBSCs) with high conversion efficiencies. This current generation process strongly depends on the photocarrier dynamics in the intermediate levels, which can sometimes give rise to a deficient output current unexpectedly. In this work, we investigated the two-photon photocurrent generation process in InAs quantum dot (QD)-in-well intermediate-band solar cells. The two-photon photocurrent is generated by an interband transition in the structure (for example, in the well or the QD) and a subsequent intraband transition in the QD, and we used two different light sources to separately control these transitions. We found that, in the case of QD interband excitation in a sample with multiple wells, the carrier collection efficiency does not simply increase with the intraband excitation intensity; in the range from about 0.08 to 0.5 W/cm2, the collection efficiency decreases with increasing intraband excitation density. A comparison between samples with different numbers of wells revealed that the repetition of carrier trapping and detrapping during the transport in a multi-well structure can effectively modulate the recombination rate. This modulation induces a reduction of the current yield under certain illumination conditions. We propose a model to explain this phenomenon and verify it by investigating the bias dependence of the two-photon photocurrent from the QD.
AIP Publishing, 28 Sep. 2021, Journal of Applied Physics, 130 (12), 124505 - 124505, English[Refereed]
Scientific journal
- Corresponding, AIP Publishing, 28 Aug. 2021, Journal of Applied Physics, 130 (8), 085701 - 085701, English
[Refereed]
Scientific journal
- AIP Publishing, 21 Feb. 2021, Journal of Applied Physics, 129 (7), 074503 - 074503, English
[Refereed]
Scientific journal
- Springer Science and Business Media LLC, Dec. 2020, Scientific Reports, 10 (1)
[Refereed]
Scientific journal
- Corresponding, American Physical Society (APS), 06 Jul. 2020, Physical Review Applied, 14 (1), English
[Refereed]
Scientific journal
- IOP Publishing, 01 Dec. 2019, Applied Physics Express, 12 (12), 125008 - 125008
[Refereed]
Scientific journal
- IOP Publishing, 01 Sep. 2019, Semiconductor Science and Technology, 34 (9), 094003 - 094003
Scientific journal
We studied the dynamics of electrons generated by two-step photoexcitation in an intermediate-band solar cell (IBSC) comprising InAs/GaAs/Al0.3Ga0.7As dot-in-well (DWELL) structure using time-resolved photocurrent (TRPC) measurement. The examined IBSC exhibited considerably slower photocurrent decay than a conventional InAs/GaAs quantum dot IBSC, which is due to the extraordina
Lead, Nature Publishing Group, May 2019, Scientific Reports, 9, 7859 - 1-8, English[Refereed]
Scientific journal
- Mar. 2019, Physica E: Low-dimensional Systems and Nanostructures
[Refereed]
- Nature Publishing Group, Feb. 2019, Nature Communications, 10, 956 - 1-3, English
[Refereed]
Scientific journal
- Springer Singapore, 2019, Green Energy and Technology
[Refereed]
Development of high-efficiency solar cells is one of the attractive challenges in renewable energy technologies. Photon up-conversion can reduce the transmission loss and is one of the promising concepts which improve conversion efficiency. Here we present an analysis of the conversion efficiency, which can be increased by up-conversion in a single-junction solar cell with a hetero-interface that boosts the output voltage. We confirm that an increase in the quasi-Fermi gap and substantial photocurrent generation result in a high conversion efficiency.
Lead, Nature Publishing Group, 01 Dec. 2018, Scientific Reports, 8 (1), pp. 872 - 1-8, English[Refereed]
Scientific journal
- Nov. 2018, Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition, 126 - 128, English
International conference proceedings
- Jul. 2018, Applied Physics Express, Vol. 11 (No. 1), pp.082303 - 1-4, EnglishHot-Carrier Generation in a Solar Cell Containing InAs/GaAs Quantum-Dot Superlattices as a Light Absorber
[Refereed]
Scientific journal
We have proposed a two-step photon up-conversion solar cell (TPU-SC), which is a single junction solar cell comprising a wide gap semiconductor (WGS) and a narrow gap semiconductor (NGS) to break through the Shockley-Queisser limit for the single-junction solar cells. In the TPU-SC, below-gap photons of WGS excite the NGS and accumulate electrons at the WGS / NGS hetero-interface. The accumulated electrons at the hetero-interface are easily excited towards the WGS barrier by the low-energy photons, resulting in the efficient two-step up-conversion (TPU). We have experimentally demonstrated highly efficient current generation by the TPU. In this paper, we present the concept of the TPU-SC, theoretical prediction of the conversion efficiency of the TPU-SC, and experimental result of efficient photocarrier collection attributable to the TPU phenomenon.
SPIE, 2018, Proceedings of SPIE - The International Society for Optical Engineering, 10527, English[Invited]
International conference proceedings
We studied intermediate-band solar cells (IBSCs) incorporating highly homogeneous InAs/GaAs quantum dot superlattices (QDSLs). The extra photocurrent generated by two-step photon absorption markedly increases at the fundamental state (FS) because the FS miniband has been successfully formed in the QDSL-IBSC by controlling the QD size homogeneity. Here, the carriers excited into the miniband spatially separate in the internal electric field, and the long-lived electrons in the intermediate states of the miniband increase the inter-subband absorption strength. The two-step photocurrent response, therefore, extends toward the longer-wavelength side corresponding to the QDSL-FS at approximately 1.2 mu m. (C) 2018 The Japan Society of Applied Physics
IOP PUBLISHING LTD, Jan. 2018, APPLIED PHYSICS EXPRESS, 11 (1), pp. 012301 - 1-4, English[Refereed]
Scientific journal
We studied the effects of the internal electric field on two-step photocarrier generation in InAs/GaAs quantum dot superlattice (QDSL) intermediate-band solar cells (IBSCs). The external quantum efficiency of QDSL-IBSCs was measured as a function of the internal electric field intensity, and compared with theoretical calculations accounting for interband and intersubband photoexcitations. The extra photocurrent caused by the two-step photoexcitation was maximal for a reversely biased electric field, while the current generated by the interband photoexcitation increased monotonically with increasing electric field intensity. The internal electric field in solar cells separated photogenerated electrons and holes in the superlattice (SL) miniband that played the role of an intermediate band, and the electron lifetime was extended to the microsecond scale, which improved the intersubband transition strength, therefore increasing the two-step photocurrent. There was a trade-off relation between the carrier separation enhancing the two-step photoexcitation and the electric-field-induced carrier escape from QDSLs. These results validate that long-lifetime electrons are key to maximising the two-step photocarrier generation in QDSL-IBSCs.
NATURE PUBLISHING GROUP, Jul. 2017, SCIENTIFIC REPORTS, 7, pp. 5865 - 1-10, English[Refereed]
Scientific journal
We studied the effects of miniband formation on the photocurrent generated by two-step intersubband absorption in an intermediate-band solar cell incorporating an InAs/GaAs quantum dot superlattice (QDSL). The two-step photocarrier generation increases with the electronic state coupling of InAs QDSLs in the intrinsic layer. Because carriers that are excited into the superlattice minibands spatially separate in an internal electric field, the electron-hole recombination rate for the photoexcited carriers decreases, and therefore, the electron lifetime increases. The long-lived electrons in the intermediate states of the QDSL miniband increase the intersubband absorption strength. We confirmed a systematic sensitive change in the two-step photocurrent generation depending on the miniband formation controlled by the temperature. Published by AIP Publishing.
Corresponding, AMER INST PHYSICS, May 2017, APPLIED PHYSICS LETTERS, 110 (19), pp. 193104 - 1-5, English[Refereed]
Scientific journal
Reducing the transmission loss for below-gap photons is a straightforward way to break the limit of the energy-conversion efficiency of solar cells (SCs). The up-conversion of below-gap photons is very promising for generating additional photocurrent. Here we propose a two-step photon up-conversion SC with a hetero-interface comprising different bandgaps of Al0.3Ga0.7As and GaAs. The below- gap photons for Al0.3Ga0.7As excite GaAs and generate electrons at the hetero-interface. The accumulated electrons at the hetero-interface are pumped upwards into the Al0.3Ga0.7As barrier by below- gap photons for GaAs. Efficient two-step photon up-conversion is achieved by introducing InAs quantum dots at the hetero-interface. We observe not only a dramatic increase in the additional photocurrent, which exceeds the reported values by approximately two orders of magnitude, but also an increase in the photovoltage. These results suggest that the two-step photon up-conversion SC has a high potential for implementation in the next-generation high-efficiency SCs.
NATURE PUBLISHING GROUP, Apr. 2017, NATURE COMMUNICATIONS, 8, pp. 14962 - 1-9, English[Refereed]
Scientific journal
- Mar. 2017, 材料 別冊, 66 (3), pp. 244~249, Japanese半導体材料・デバイスの最新の進展 3. 太陽電池の変換効率限界を引き上げる半導体材料設計
[Refereed][Invited]
Scientific journal
We studied time-resolved photocarrier transport through InAs/GaAs quantum dot superlattice (QDSL) solar cells (SCs) using time-of-flight spectroscopy with an optical probe QD structure beneath the QDSL. Carriers optically pumped in the top p-GaAs layer were transported through the intrinsic layer, including the QDSLs, before arriving at the probe QDs. The photoexcited carrier density significantly influenced the time-resolved photoluminescence (PL) of the QDSLs and probe QDs. The time-resolved PL profile of the probe QDs indicated that excitation densities in excess of 25nJ/cm(2) drastically decreased the rise time, suggesting rapid carrier transport through the QDSLs. This was also confirmed by QDSL carrier transport dynamics, for which the PL intensity of the excited states decayed rapidly above this excitation power density, 25nJ/cm(2), while the ground state remained constant. These results demonstrate that filling the ground states of QDSLs and starting to populate the excited state miniband accelerates carrier transport in QDSL SCs. Furthermore, according to two-step photon absorption measurements taken with a 1.3-mu m infrared laser light source, electrons play a key role in the generation of extra photocurrent by sub-band-gap photon irradiation.
AMER PHYSICAL SOC, Nov. 2016, PHYSICAL REVIEW B, 94 (19), pp. 195313 - 1 -9, English[Refereed]
Scientific journal
We studied effects of the internal electric field on the two-step photocurrent generation in quantum dot superlattice (QDSL) solar cells. We calculated the quantum efficiency of intersubbad photoexcited carriers in QDSL as a function of the internal electric field. In our calculation, we proposed a model of a QDSL structure in which electrons created by the interband transition are excited by subbandgap photons corresponding to the intersubband transition. We found that extra photocurrent caused by the two-step photoexcitation shows the maximum at a reverse biased electric field, whereas current generated by only the interband photoexcitation increases monotonically with increasing the electric field. The internal electric field of the solar cell can separate photocreated electron and hole in the SL miniband, and electron lifetime is extended, which improve the intersubband transition strength, and, therefore, the two-step photocurrent increases. Thus, the calculated result unveils that there is a trade-off relation between carrier separation in the SL miniband and electric-field induced carrier escape from QDSL. These results clarify that long electron lifetime extended by carrier separation is a key maximizing the two-step photocurrent generation in a QDSL solar cell.
Society of Materials Science Japan, 01 Sep. 2016, Zairyo/Journal of the Society of Materials Science, Japan, 65 (9), 647 - 651, Japanese[Refereed]
Scientific journal
- 日本材料学会, Sep. 2016, 日本材料学会会誌「材料」, 65 (9), pp. 647 - 651, Japanese量子ドット超格子太陽電池における2段階光励起電流生成ダイナミクスの電界依存特性
[Refereed]
Scientific journal
We studied in detail the photocurrent generation process in two-step photon absorption in intermediate-band solar cells, including InAs quantum dots embedded in Al0.3Ga0.7As/GaAs quantum wells at room temperature. The photocurrent generated by the two-step photon absorption exhibited saturation as the interband excitation intensity increased in strength. On the other hand, as the intersubband excitation intensity increased, the two-step photoexcitation current deviated from a power law. Furthermore, the two-step photoexcitation current exhibiting saturation and deviation strongly depended on both the interband and intersubband excitation intensities. To interpret these phenomena, we performed a theoretical simulation of the two-step photoexcitation current. The results suggest that the photocurrent saturation and deviation were caused by filling of the intermediate states with electrons. Furthermore, our calculated results indicate that the electron-recombination lifetime in the intermediate states is extremely long. The results of the temperature dependence of the two-step photoexcitation current and the excitation intensity dependence of photoluminescence suggest that efficient electron-hole separation extends electron lifetime.
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, Mar. 2016, IEEE JOURNAL OF PHOTOVOLTAICS, 6 (2), 465 - 472, English[Refereed]
Scientific journal
- Institute of Electrical and Electronics Engineers ({IEEE}), Nov. 2015, IEEE Journal of Photovoltaics, 5 (6), 1613 - 1620, English
[Refereed]
Scientific journal
We systematically studied two-step photocurrent generation as functions of the excitation intensities for the interband and inter-subband transitions in an InAs/GaAs/Al0.3Ga0.7As dot-in-well (DWELL) intermediate-band solar cell. The two-step photoexcitation current shows saturation as the inter-band excitation intensity becomes strong, and we found that the inter-band excitation intensity showing the current saturation strongly depends on the inter-subband excitation intensity. To interpret the current-saturation behavior, we proposed a model and carried out theoretical simulation. Simulated results excellently reproduce the experimental observations. It has been clarified that the photocurrent saturation is caused by filling the intermediate states with electrons. Furthermore, the recombination lifetime in DWELL was pointed out to be extremely long. Our results suggest that this carrier lifetime is an important key to realize strong enhancement of two-step photoexcitation.
Society of Materials Science Japan, 01 Sep. 2015, Zairyo/Journal of the Society of Materials Science, Japan, 64 (9), 690 - 695, Japanese[Refereed]
Scientific journal
In this study, we propose a carrier time-of-flight technique to evaluate the carrier transport time across a quantum structure in an active region of solar cells. By observing the time-resolved photoluminescence signal with a quantum-well probe inserted under the quantum structure at forward bias, the carrier transport time can be efficiently determined at room temperature. The
{AIP} Publishing, Jul. 2015, Applied Physics Letters, 107 (4), 043901 - 043901, English[Refereed]
Scientific journal
We studied the two-step photon absorption (TSPA) process in InAs/GaAs quantum-dot superlattice (QDSL) solar cells. TSPA of subband-gap photons efficiently occurs when electrons are pumped from the valence band to the states above the inhomogeneously distributed fundamental states of QDSLs. The photoluminescence (PL)-excitation spectrum demonstrates an absorption edge attributed to the higher excited states of the QDSLs in between the InAs wetting layer states and the fundamental states of QDSLs. When the absorption edge of the excited state was resonantly excited, the superlinear excitation power dependence of the PL intensity demonstrated that the electron and hole created by the interband transition separately relax into QDSLs. Furthermore, time-resolved PL measurements demonstrated that the electron lifetime is extended by thereby inhibiting recombination with holes, enhancing the second subband-gap absorption.
AMER PHYSICAL SOC, May 2015, PHYSICAL REVIEW B, 91 (20), pp. 201303 - 1-6, English[Refereed]
Scientific journal
- Ultrafast Photocarrier Transport Dynamics in InAs/GaAs Quantum Dot Superlattice Solar Cell
We studied time-resolved carrier transport through InAs/GaAs quantum dot superlattice (QDSL) solar cells, using time-of-flight spectroscopy with an optical probe structure lying beneath the QDSL. The density of photoexcited carriers in the top p-GaAs layer significantly influences the time-resolved photoluminescence (TRPL) of probe while TRPL of QDSL keeps unchanged. Also, the PL intensity of probe showed exponential increase as the excitation pulse energy increased, which may indicate that the dynamics of holes rule the dynamics observed in TRPL. The induced filling of QD states by strong excitation leads to the condition where carries travel over the QDSL and reach the probe faster.
IEEE, 2015, 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), English[Refereed]
International conference proceedings
- Saturable Two-step Photo current Generation in Intermediate-band Solar Cells Including InAs Quantum Dots Embedded in Al0.3Ga0.7As/GaAs Quantum Wells
We have studied detailed photocurrent generation process in the two-step photon absorption in intermediate-band solar cells including InAs quantum dots embedded in Al0.3Ga0.7As/GaAs quantum wells and influence of thermal carrier escape at room temperature. The photocurrent generated by the two-step photon absorption shows saturation as the inter-band excitation intensity becomes strong. and the inter-band excitation intensity showing the saturation behavior strongly depends on the inter-subband excitation intensity. To interpret this phenomenon. we carried out a theoretical simulation based on carrier dynamics considering carrier generation. energy relaxation and thermal carrier escape. The results indicate that the photocurrent saturation is caused by filling the intermediate states with electrons. The shift of the saturation point depending on the inter-subband excitation intensity is caused by the shift of the quasi-Fermi level for the intermediate states.
IEEE, 2015, 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), English[Refereed]
International conference proceedings
- Comparison of Electron and Hole Mobilities in Multiple Quantum Well Solar Cells Using a Time-of-Flight Technique
A difficulty of carrier transport in multiple quantum well ( MQW) solar cells is one critical issue that limits their cell performance. Here, direct measurement of electron and hole transport times across InGaAs/GaAsP MQWs has been carried out using our proposed time-of-flight measurement technique on p-on-n and n-on-p MQW structures, respectively. The corresponding effective mobilities are determined, allowing us to approximate the MQW region as a quasi-bulk material with smaller carrier mobilities than a bulk crystal. The result shows similar effective electron and hole mobilities. This results in the similar tendency of cell performance in p-on-n and n-on-p MQW solar cells.
IEEE, 2015, 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), English[Refereed]
International conference proceedings
We studied the two-step photon absorption (TSPA) process in InAs/GaAs quantum-dot superlattice (QDSL) solar cells. The photoluminescence (PL) and its excitation spectrum (PLE) showed the contribution of the higher excited states (ESs) forming the miniband of the QDSLs above the in homogeneously distributed ground states (GSs). TSPA of subbandgap photons efficiently occurs when electrons are pumped from the valence band (VB) to the higher ESs. When the higher ESs were resonantly excited, the superlinear excitation power dependence of the PL intensity appeared. Moreover, time-resolved PL showed that the electron lifetime is extended. These results demonstrate that the excited electron and hole separately relax into QDSLs, and thereby, enhancing the second sub-bandgap absorption.
IEEE, 2015, 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), English[Refereed]
International conference proceedings
We have studied detailed carrier generation process in the two-step photon absorption and influence of thermal carrier escape in quantum-dot intermediate-band solar cells (QD-IBSC). The photocurrent created by the two-step photon absorption shows saturation as the inter-band excitation intensity becomes strong, and the inter-band excitation intensity showing the saturation behavior strongly depends on the inter-subband excitation intensity. To interpret this phenomenon, we carried out a theoretical simulation based on carrier dynamics considering carrier generation, energy relaxation and thermal carrier escape. The results indicate that the photocurrent saturation is caused by filling the intermediate states. The shift of the saturation point depending on the inter-subband excitation intensity is caused by the shift of the quasi-Fermi level for the intermediate states.
SPIE-INT SOC OPTICAL ENGINEERING, 2015, PHYSICS SIMULATION AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES IV, 9358, EnglishInternational conference proceedings
- Institute of Electrical and Electronics Engineers ({IEEE}), Nov. 2014, IEEE Journal of Photovoltaics, 4 (6), 1518 - 1525, English
[Refereed]
Scientific journal
We investigated the effects of an increase in the barrier height on the enhancement of the efficiency of two-step photo-excitation in InAs quantum dot (QD) solar cells with a dot-in-well structure. Thermal carrier escape of electrons pumped in QD states was drastically reduced by sandwiching InAs/GaAs QDs with a high potential barrier of Al0.3Ga0.7As. The thermal activation energy increased with the introduction of the barrier. The high potential barrier caused suppression of thermal carrier escape and helped realize a high electron density in the QD states. We observed efficient two-step photon absorption as a result of the high occupancy of the QD states at room temperature. (C) 2014 AIP Publishing LLC.
AMER INST PHYSICS, Aug. 2014, JOURNAL OF APPLIED PHYSICS, 116 (6), pp. 063510 - 1-5, English[Refereed]
Scientific journal
MISC
- Society of Materials Science Japan, 01 Mar. 2017, Zairyo/Journal of the Society of Materials Science, Japan, 66 (3), 244 - 249, Japanese
Book review
- 01 Sep. 2014, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 75th, ROMBUNNO.17P-A28-1, Japaneseキャリア走行時間測定法による量子構造太陽電池内のダイナミクスの直接観測
- 03 Mar. 2014, 応用物理学会春季学術講演会講演予稿集(CD-ROM), 61st, ROMBUNNO.19P-D7-11, Japaneseプローブ構造を用いた量子構造太陽電池におけるキャリア走行時間の測定
Books etc
Presentations
- 第70回応用物理学会春季学術講演会, 15 Mar. 2023, EnglishOptimization of the Morphological Structure of Spin-Coated MAPbBr₃ on p-GaAs Substrates for Perovskite/GaAs-based Photon Up-conversion Solar Cells
Oral presentation
- 日本材料学会2022年度半導体エレクトロニクス部門委員会第3回研究会, 21 Jan. 2023, JapaneseドープされたInAs/GaAs量子ドットにおける局在表面プラズモン共鳴による電場増強効果
Oral presentation
- 日本材料学会2022年度半導体エレクトロニクス部門委員会第2回研究会, 19 Nov. 2022, Japanese量子ドットを内包する半導体ヘテロナノ構造を利用した量子型赤外光検出素子の暗電流制御
Oral presentation
- 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33), EnglishBroadband Enhancement of Intraband Transition in Two-Step Photon Up-Conversion Solar Cells with a Doubled-Heterointerface Strucure
Oral presentation
- 第41回電子材料シンポジウム（EMS41), 21 Oct. 2022Intraband Transition in Two-Step Photon Up-Conversion Solar Cells
- 第41回電子材料シンポジウム（EMS41), 21 Oct. 2022, JapaneseThermal Activation Process at the Heterointerface in Photon Up-Conversion Solar Cells Using hole Up-Conversion
Oral presentation
- 8th World Conference on Photovoltaic Energy Conversion (WCPEC-8), EnglishHigh Absorptivity of Intraband Transition Occurring at Heterointerface in Two-Step Photon Up-Conversion Solar Cells
Poster presentation
- The 83rd JSAP Autumn Meeting 2022, 21 Sep. 2022, EnglishElectrical Properties of AlGaAs/GaAs-Based Two-Step Photon Up-Conversion Solar Cells with Doubled Heterointerfaces
Oral presentation
- 9th International Symposium on Control of Semiconductor Interfaces(ISCSI-IX), EnglishPhotoluminescence Characteristics of InAs Quantum Dots in the Doubled-heterointerface of AlGaAs/GaAs-based Two-step Photon Up-conversion Solar Cells
Oral presentation
- International Conference on the Physics of Semiconductors (ICPS 2022), EnglishIntraband Absorptivity in Two-Step Photon Up-Conversion Solar Cells
Oral presentation
- 第69回応用物理学会春季学術講演会, 23 Mar. 2022, Japanese2段階フォトンアップコンバージョン太陽電池における ヘテロ界面のバンド内遷移の光吸収率
Oral presentation
- 第69回応用物理学会春季学術講演会, 23 Mar. 2022, Japanese正孔フォトンアップコンバージョン太陽電池の赤外光照射による光電流制御
Oral presentation
- The 6th International Conference on New Energy Future Energy Systems (NEFES 2021), 02 Nov. 2021, EnglishRoute to High Conversion Efficiency Solar Cell
[Invited]
Invited oral presentation
- 第40回電子材料シンポジウム, 11 Oct. 2021, Japanese2段階フォトンアップコンバージョン太陽電池における 断熱的バンド内光励起による擬フェルミ準位分裂
Poster presentation
- 第82回応用物理学会秋季学術講演会, 11 Sep. 2021, EnglishOn the Simulation of Two-Step Photocurrent Generation in an InAs Quantum Dot -in-Well Intermediate Band Solar Cell
Oral presentation
- 第82回応用物理学会秋季学術講演会, 10 Sep. 2021, Japanese正孔のアップコンバージョンを利用した2段階フォトンアップコンバージョン太陽電池のバンド内遷移過程
Oral presentation
- 8th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2021), 03 Sep. 2021, EnglishTwo-step photon up-conversion solar cells: recent progress and future directions
[Invited]
Invited oral presentation
- 第68回応用物理学会春季学術講演会, 17 Mar. 2021, EnglishEfficiency Compensation from Intraband Transitions of Opposite Carrier in a Quantum Dot-in-Well Intermediate Band Solar Cell
Oral presentation
- 第68回応用物理学会春季学術講演会, 17 Mar. 2021, Japanese変調ドープした二段階フォトンアップコンバージョン太陽電池における電圧上昇効果
Oral presentation
- 第4回フロンティア太陽電池セミナー, 26 Nov. 2019, Japanese高効率2段階フォトンアップコンバージョン太陽電池の基礎動作検証
[Invited]
Invited oral presentation
- 46th IEEE Photovoltaic Specialists Conference, Jul. 2019, English, Chicago, International conferenceStrong Voltage-Boost Effect in Two-Step Photon-Up Conversion Solar Cells
Oral presentation
- 46th IEEE Photovoltaic Specialists Conference, Jul. 2019, English, Chicago, International conferenceHot-Carrier Extraction in InAs/GaAs Quantum Dot Superlattice Solar Cells
Oral presentation
- 46th IEEE Photovoltaic Specialists Conference, Jun. 2019, English, Chicago, International conferenceReciprocal Relationship Between Photoluminescence and Photocurrent in Two-Step Photon Up-Conversion Solar Cell
Oral presentation
- Optics&Photonics International Congress 2019, Apr. 2019, English, Yokohama, International conferenceEfficient Hot-Carrier Generation in InAs/GaAs Quantum Dot Superlattices
Oral presentation
- 第66回応用物理学会春季学術講演会, Mar. 2019, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子を用いたホットキャリア型太陽電池における開放電圧の向上
Oral presentation
- 第37回電子材料シンポジウム, Oct. 2018, Japanese, Domestic conferenceVoltage boost effect in two-step photon up-conversion solar cell with partial absorptivity
Poster presentation
- 35th European PV Solar Energy Conference and Exhibition, Sep. 2018, English, Belgium, International conferenceOptimal Band Gap Energies for Two-Step Photon Up-Conversion Solar Cells with Partial Absorptivity
Oral presentation
- 第79回応用物理学会秋季学術講演会, Sep. 2018, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子太陽電池におけるホットキャリア電流取り出し特性
Oral presentation
- 第79回応用物理学会秋季学術講演会, Sep. 2018, Japanese, Domestic conference2段階フォトンアップコンバージョン太陽電池における理論変換効率の入射光スペクトル形状依存性
Oral presentation
- 2018 年度 応用物理学会中国四国支部・若手半導体研究会, 05 Aug. 2018, Japanese超高効率フォトンアップコンバージョン太陽電池の提案と基礎検証
[Invited]
Invited oral presentation
- The 7th edition of the World Conference on Photovoltaic Energy Conversion, Jun. 2018, English, Hawaii, International conferenceCarrier Collection Efficiency of Intraband-Excited Carriers in Two-Step Photon Up-Conversion Solar Cells
Oral presentation
- 応用物理学会関西支部平成30年度第1回講演会, May 2018, Japanese, 神戸大学, Domestic conference入射光スペクトル形状を考慮した2段階フォトンアップコンバージョン太陽電池の理論変換効率
Poster presentation
- International Conference on Nanophotonics and Nano-optoelectronics 2018, Apr. 2018, English, Yokohama, International conferencePolarization Dependent Photocurrent in InAs/GaAs Quantum Dot Superlattice Solar Cells
Oral presentation
- International Conference on Nanophotonics and Nano-optoelectronics 2018, Apr. 2018, English, Yokohama, International conferenceExtraction Efficiency of Up-Converted Electrons in Two-Step Photon Up-Conversion Solar Cells
Oral presentation
- 第65回応用物理学会春季学術講演会, Mar. 2018, Japanese, Domestic conference吸収率を考慮した2段階フォトンアップコンバージョン太陽電池の理論変換効率
Oral presentation
- 第65回応用物理学会春季学術講演会, Mar. 2018, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子を用いたホットキャリア型太陽電池動作実証
Oral presentation
- 応用物理学会関西支部平成29年度第3回講演会, Feb. 2018, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子を用いたホットキャリア型太陽電池の動作評価
Poster presentation
- SPIE Photonics West, Jan. 2018, English, San Francisco, International conferenceTwo-Step Photon Up-Conversion Solar Cell: Propose and Demonstration
[Invited]
Invited oral presentation
- MTSA2017-OptoX Nano-TeraNano8, Nov. 2017, English, Okayama, International conferenceTwo-Step Photon Up-Conversion Solar Cell
Oral presentation
- The 27th Photovoltaic Science and Engineering Conference, Nov. 2017, English, Otsu, International conferenceTwo-Step Photo-Excitated Electrons with Extremely-Long Lifetime in Intermedeate-band Solar Cells Using Dot-in Well Strucyure
Oral presentation
- The 27th Photovoltaic Science and Engineering Conference, Nov. 2017, English, Otsu, International conferenceTwo-Step Photn Up-Conversion Solar Cells Incorporating a Voltage Booster Hetero-Interface
Oral presentation
- The 27th Photovoltaic Science and Engineering Conference, Nov. 2017, English, Otsu, International conferenceInfrared Absorption Characteristics in Two-Step Photon Up-Conversion Solar Cells
Oral presentation
- The 27th Photovoltaic Science and Engineering Conference, Nov. 2017, English, Otsu, International conferenceEfficient Two-Step Photocurrent in Intermediate Band Solar Cells Using Highly Homogeneous InAs/GaAs Quantum-Dot Superlattice
Oral presentation
- 第78回応用物理学会秋季学術講演会, Sep. 2017, Japanese, Domestic conference低温キャップInAs/GaAs量子ドット超格子中間バンド型太陽電池における熱脱出の抑制
Oral presentation
- 日本材料学会半導体エレクトロニクス部門委員会平成29年度第1回研究会, Sep. 2017, Japanese, Domestic conference低温キャップInAs/GaAs量子ドット超格子中間バンド型太陽電池における2段階光吸収の増強
Oral presentation
- 33rd European Photovoltaic Solar Energy Conference and Exhibition, Sep. 2017, English, Netherlands, International conferencePhoton Up-Converted Photocurrent in a Single Junction Solar Cell with a Hetero-Interface
Oral presentation
- 33rd European Photovoltaic Solar Energy Conference and Exhibition, Sep. 2017, English, Netherlands, International conferenceIncreasing Photovoltage Boosted by Photon Up-Conversion in a Single-Junction Solar Cell with a Hetero-Interface
Oral presentation
- 第78回応用物理学会秋季学術講演会, Sep. 2017, Japanese, Domestic conferenceInAs/GaAs量子ドット超格子太陽電池におけるバンド内遷移の偏光特性
Oral presentation
- 33rd European Photovoltaic Solar Energy Conference and Exhibition, Sep. 2017, English, Netherlands, International conferenceExtended Optical Response of Two-Step Photoexcitation in InAs/GaAs Quantum-Dot Superlattice Intermediate Band Solar Cells
Oral presentation
- SemiconNano 2017: 6th International Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, Sep. 2017, English, Milano, International conferenceCarrier Dynamics in Photon Up-Conversion Solar Cells
Oral presentation
- 2017 IEEE Photovoltaic Specialists Conference, Jun. 2017, English, Washington D.C., International conferenceIncreasing Current Generation by Photon Up-Conversion in a Single-Junction Solar Cell with a Hetero-Interface
Oral presentation
- 第77回応用物理学会秋季学術講演会, Sep. 2016, Japanese, Domestic conferenceInAs/GaAs量子ドット中間バンド型太陽電池における電子の熱脱出過程の解明
Oral presentation
- 第35回電子材料シンポジウム, Jul. 2016, Japanese, Domestic conferenceThermal carrier-escape process from the intermediate band in InAs/GaAs quantum dot solar cells
Poster presentation
- UK Semiconductors 2016, Jul. 2016, English, Sheffield, International conferencePolarization-Insensitive Intraband Transition in InAs/GaAs Quantum Dot Superlattices
Oral presentation
- 32nd European Photovoltaic Solar Energy Conference and Exhibition, Jun. 2016, English, Munich, International conferenceExtended Electron Lifetime in Intermediate-Band Solar Cells Using Dot-in-Well Structure
Oral presentation
- 32nd European Photovoltaic Solar Energy Conference and Exhibition, Jun. 2016, English, Munich, International conferenceEnhancement of Two-Step Photon Absorption Due to Miniband Formation in InAs/GaAs Quantum Dot Superlattice Solar Cell
Oral presentation
Association Memberships
IEEE Electron Devices Society Membership
Jan. 2018 - PresentIEEE Membership
Jan. 2018 - Present応用物理学会 正会員
Jan. 2017 - Present
Research Projects
- 日本学術振興会, 科学研究費助成事業 基盤研究(B), 基盤研究(B), 神戸大学, Apr. 2023 - Mar. 2026ヘテロ界面に挿入した量子ドットによる赤外増感型光電変換の実現
- 日本学術振興会, 科学研究費助成事業 基盤研究(C), 基盤研究(C), 神戸大学, Apr. 2023 - Mar. 2026ダブルトンネル接合を利用したラチェット型アップコンバージョン太陽電池
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A), Grant-in-Aid for Scientific Research (A), Kobe University, 01 Apr. 2019 - 31 Mar. 2023Novel development of infrared sensitized photovoltaics based on control of intraband optical transition dipole
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Early-Career Scientists, Grant-in-Aid for Early-Career Scientists, Kobe University, Apr. 2020 - Mar. 2023Realization of high-efficiency energy conversion in solar cells using photon up-conversion
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Research (Exploratory), Grant-in-Aid for Challenging Research (Exploratory), Kobe University, Jul. 2020 - Mar. 2022Control of intraband optical transition sensitized in infrared wavelength region and application for ultra-high sensitive infrared sensor
- 学術研究助成基金助成金／国際共同研究加速基金(国際共同研究強化(B)), Oct. 2018 - Mar. 2021
Competitive research funding
- 公益財団法人ひょうご科学技術協会, 学術研究助成, Apr. 2019 - Mar. 2020, Principal investigatorフォトンアップコンバージョン太陽電池における高効率エネルギー変換の実現
- 科学研究費補助金／研究活動スタート支援, Aug. 2018 - Mar. 2020, Principal investigator
Competitive research funding
- 公益財団法人 小笠原科学技術振興財団, 国際研究集会出張助成, Nov. 2017 - Nov. 2017半導体ヘテロ接合を有する単接合型太陽電池における光アップコンバージョンによる光起電力の増強
- 公益財団法人 関西エネルギー・リサイクル科学技術振興財団, 国際交流活動助成（渡航）, Jun. 2017 - Jun. 2017ヘテロ接合を有する単接合型太陽電池の光アップコンバージョンによる電流生成の増大
- 公益財団法人 村田学術振興財団, 海外派遣援助, Apr. 2016 - Apr. 2016ドットインウェル構造を用いた中間バンド型太陽電池における、電子寿命の伸長
- 公益財団法人 関西エネルギー・リサイクル科学技術振興財団, 国際交流活動助成（海外渡航), Al0.3Ga0.7As/GaAs量子井戸に埋め込まれたInAs量子ドットを使用した中間バンド型太陽電池の2段階光キャリア生成の飽和, Jun. 2015 - Jun. 2015, Principal investigator