Directory of Researchers
| KITAMURA Masatoshi |  |
| Graduate School of Engineering / Department of Electrical and Electronic Engineering | |
| Professor | |
| Applied Science |
Researcher Profile and Settings
Affiliation
＜Faculty / Graduate School / Others＞
Graduate School of Engineering / Department of Electrical and Electronic Engineering＜Related Faculty / Graduate School / Others＞
Faculty of Engineering / Department of Electrical and Electronic Engineering, Career Center
Teaching
- Office for the Promotion of International Exchange, 2022, Learning about the Profession and Self B
- Faculty of Engineering / Department of Electrical and Electronic Engineering, 2022, Electric Circuit Theory IIA
- Faculty of Engineering / Department of Electrical and Electronic Engineering, 2022, Electrical Instrumentation A
- Faculty of Engineering / Department of Electrical and Electronic Engineering, 2022, Electric Circuit Theory II
- Faculty of Engineering / Department of Electrical and Electronic Engineering, 2022, Electric Circuit Theory IIB
- Faculty of Engineering / Department of Electrical and Electronic Engineering, 2022, Electrical Instrumentation B
- Graduate School of Engineering / Department of Electrical and Electronic Engineering, 2022, Organic Electronic
- Graduate School of Engineering / Department of Electrical and Electronic Engineering, 2022, Quantum Devices I
- Graduate School of Engineering, 2022, Advanced Science and Technology B
Research Activities
Research Interests
Research Areas
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment
Committee Memberships
- 2018 - Present, 日本学術振興会アモルファス・ナノ材料と応用第147委員会, 運営委員 半導体材料 副担当
- 2014 - Present, 薄膜材料デバイス研究会, 組織委員
- 2013 - Present, 公益社団法人応用物理学会, APEX/JJAP編集委員
- Aug. 2012 - Present, International Workshop on Active-Matrix Flatpanel Displays and Devices, Program Committee Vice Chair (25th, 26th), Program Committee Member (21st-24th)
- 2007 - Present, 電子材料シンポジウム, 論文委員
- 2021 - 2021, The 11th International Conference on Flexible and Printed Electronics, Publication Chair, Program Committee
- Feb. 2016 - Jan. 2021, 公益社団法人応用物理学会, 代議員
- Apr. 2017 - Mar. 2019, 応用物理学会関西支部, 諮問委員
- 2019, 46th International Symposium on Compound Semiconductors, Program Subcommittees Chair
- Apr. 2015 - Mar. 2017, 応用物理学会関西支部, 幹事
- 2016 - 2016, International Conference on Flexible and Printed Electronics, Technical Program Committee
- 2016 - 2016, 43th International Symposium on Compound Semiconductors, Program Committee, Local Arrangement Committee
- 2013 - 2015, International Conference on Solid State Devices and Materials, Program Committee
- 2014 - 2014, 8th International Conference on Molecular Electronics and Bioelectronics, Organizing Committee
- 2011 - 2014, 公益社団法人応用物理学会, 学術講演会プログラム編集委員
- 2012 - 2012, 7th International Conference on Molecular Electronics and Bioelectronics, Executive Member
- 2012 - 2012, 40th International Symposium on Compound Semiconductors, Program Committee, Local Arrangement Committee
- 2011 - 2012, 公益社団法人応用物理学会, 有機分子・バイオエレクトロニクス分科会・編集・企画幹事
- 2011 - 2011, Workshop on Innovation and Pioneering Technology, Executive Member
- 2009 - 2009, International Symposium on Quantum Nanophotonics and Nanoelectronics, Local Steering Committee
- 2008 - 2009, 電子材料シンポジウム, 総務委員
- 2007 - 2008, 公益社団法人応用物理学会, 有機分子・バイオエレクトロニクス分科会・幹事
Awards
Published Papers
Abstract Exfoliated flakes of layered materials, such as hexagonal boron nitride (hBN) and graphite with a thickness of several tens of nanometers, are used to construct van der Waals heterostructures. A flake with a desirable thickness, size, and shape is often selected from many exfoliated flakes placed randomly on a substrate using an optical microscope. This study examined the visualization of thick hBN and graphite flakes on SiO2/Si substrates through calculations and experiments. In particular, the study analyzed areas with different atomic layer thicknesses in a flake. For visualization, the SiO2 thickness was optimized based on the calculation. As an experimental result, the area with different thicknesses in a hBN flake showed different brightness in the image obtained using an optical microscope with a narrow band-pass filter. The maximum contrast was 12% with respect to the difference of monolayer thickness. In addition, hBN and graphite flakes were observed by differential interference contrast (DIC) microscopy. In the observation, the area with different thicknesses exhibited different brightnesses and colors. Adjusting the DIC bias had a similar effect to selecting a wavelength using a narrow band-pass filter.
IOP Publishing, 09 May 2023, Nanotechnology, 34 (29), 295701 - 295701Scientific journal
Thiophene–thiophene block copolymer composed of hydrophilic and hydrophobic side chain functionalities was designed and synthesized. Deprotonative metalation nickel-catalyzed polymerization protocol successfully afforded the block copolymer, which side chains are derived...
Royal Society of Chemistry (RSC), Jan. 2023, Journal of Materials Chemistry C, 11 (7), 2484 - 2493, English[Refereed]
Scientific journal
- Last, Elsevier BV, Jan. 2023, Thin Solid Films, 764, 139631 - 139631, English
[Refereed]
Scientific journal
Abstract We propose a visualization technique for identifying an exfoliated monolayer hexagonal boron nitride (hBN) flake placed on a SiNx/Si substrate. The use of a Si substrate with a 63 nm thick SiNx film enhanced the contrast of monolayer hBN at wavelengths of 480 and 530 nm by up to 12% and −12%, respectively. The maximum contrast for the Si substrate with SiNx is more than four times as large as that for a Si substrate with a ∼90 or ∼300 nm SiO2 film. Based on the results of the reflectance spectrum measurement and numerical calculations, the enhancement is discussed.
Last, IOP Publishing, 01 Aug. 2022, Applied Physics Express, 15 (8), 086502 - 086502, English[Refereed]
Scientific journal
A trimethylsilyl-monolayer modified by vacuum ultraviolet (VUV) light has been investigated for use in solution-processed organic thin-film transistors (OTFTs). The VUV irradiation changed a hydrophobic trimethylsilyl-monolayer formed from hexamethyldisilazane vapor into a hydrophilic surface suitable for solution processing. The treated surface was examined via water contact angle measurement and X-ray photoelectron spectroscopy. An appropriate irradiation of VUV light enabled the formation of a dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) film on a modified monolayer by spin-coating. Consequently, the C8-BTBT-based OTFT with a monolayer modified for an optimal VUV irradiation time exhibited a field-effect mobility up to 4.76 cm2 V−1 s−1. The partial monolayer modification with VUV can be adapted to a variety of solution-processes and organic semiconductors for prospective printed electronics.
Corresponding, IOP Publishing, 01 Jun. 2022, Japanese Journal of Applied Physics, 61 (SE), SE1012 - SE1012, English[Refereed]
Scientific journal
Abstract Hexagonal boron nitride (h-BN) is an important insulating layered material for two-dimensional heterostructure devices. Among many applications, few-layer h-BN films have been employed as superior tunneling barrier films. However, it is difficult to construct a heterostructure with ultra-thin h-BN owing to the poor visibility of flakes on substrates, especially on a metallic surface substrate. Since reflectance from a metallic surface is generally high, a h-BN film on a metallic surface does not largely influence reflection spectra. In the present study, a thin Au layer with a thickness of ∼10 nm deposited on a Si substrate with a thermally grown SiO2 was used for visualizing h-BN flakes. The thin Au layer possesses conductivity and transparency. Thus, the Au/SiO2/Si structure serves as an electrode and contributes to the visualization of an ultra-thin film according to optical interference. As a demonstration, the wavelength-dependent contrast of exfoliated few-layer h-BN flakes on the substrate was investigated under a quasi-monochromatic light using an optical microscope. A monolayer h-BN film was recognized in the image taken by a standard digital camera using a narrow band-pass filter of 490 nm, providing maximum contrast. Since the contrast increases linearly with the number of layers, the appropriate number of layers is identified from the contrast. Furthermore, the insulating property of a h-BN flake is examined using a conductive atomic force microscope to confirm whether the thin Au layer serves as an electrode. The tunneling current through the h-BN flake is consistent with the number of layers estimated from the contrast.Last, IOP Publishing, 05 Feb. 2022, Nanotechnology, 33 (6), 065702 - 065702[Refereed]
Scientific journal
- American Chemical Society (ACS), 15 Jul. 2021, The Journal of Physical Chemistry C, 125 (27), 14991 - 14999
[Refereed]
Scientific journal
- American Chemical Society (ACS), 13 Apr. 2021, ACS Omega, 6 (14), 9520 - 9527
[Refereed]
Scientific journal
- IOP Publishing, 04 Sep. 2020, Journal of Physics D: Applied Physics
[Refereed]
Scientific journal
- American Chemical Society ({ACS}), 12 Aug. 2020, ACS Applied Materials & Interfaces, 12 (32), 36428 - 36436
[Refereed]
Scientific journal
- IOP Publishing, 01 Apr. 2020, Japanese Journal of Applied Physics, 59 (SG), SGGL01 - SGGL01, English
[Refereed]
Scientific journal
- Corresponding, IOP Publishing, 01 Mar. 2020, Japanese Journal of Applied Physics, 59 (SD), SDDA09 - SDDA09, English
[Refereed]
Scientific journal
- Corresponding, IOP Publishing, 01 Mar. 2020, Japanese Journal of Applied Physics, 59 (SD), SDDA03 - SDDA03, English
[Refereed]
Scientific journal
- Corresponding, IOP Publishing, 01 Mar. 2020, Japanese Journal of Applied Physics, 59 (3), 036503 - 036503, English
[Refereed]
Scientific journal
- {IOP} Publishing, 20 Feb. 2020, Flexible and Printed Electronics
[Refereed]
Scientific journal
Submonolayer two-dimensional (2D) islands of diphenyl dinaphthothienothiophene with various shapes and densities (N) were formed on a SiO2/Si substrate by controlling substrate temperature and the surface treatment for SiO2 in vacuum deposition to investigate the growth mechanism on the basis of their morphology. The statistical analysis shows that the 2D islands have complex shapes when N is small, and there is a constant relationship between N and the shape complexity of the 2D islands, regardless of the deposition conditions. Because the surface morphology is determined by diffusion coefficients for admolecules on a substrate surface (D-s) and along the edge of a 2D island (D-edg), the relationship between (N, shape complexity) and (D-s, D-edg) is studied. The statistical analysis indicates that D-edg is almost independent of the surface conditions and is instead determined by interactions with molecules constructing the 2D island. Therefore, D-edg is considered as a material-dependent parameter to control the morphology for growing high-quality films in vacuum deposition.
AMER CHEMICAL SOC, Jan. 2020, JOURNAL OF PHYSICAL CHEMISTRY C, 124 (1), 1064 - 1069, English[Refereed]
Scientific journal
The growth mechanism of 2,9-diphenyl-dinaphtho [2,3-b:2',3'-f]thieno [3,2-b]thiophene (DPh-DNTT) thin-films prepared by vacuum deposition was investigated based on the morphological crystallinity of the obtained films. In addition to atomic force microscopy, which is commonly used for imaging surface morphology, optical microscopy was also positively used for the same purpose. The technique allows the quick and easy evaluation of thin films. The optical microscopy images show that DPh-DNTT films grew according to a layer-by-layer growth mode. Each layer grew as flat two-dimensional (2D) islands with a thickness of about 2.3 nm, where DPh-DNTT molecules stand almost vertically on the substrate. The height difference between layers provided a color contrast in these images, which visualizes the initial 2D island on the Si substrate with thermally grown SiO2 and fractal-shape 2D islands on top surface. By using the method, a monolayer of isolated and round 2D islands, with a diameter of approximately 4 mu m, formed at a high substrate temperature on a SiO2 surface that had been previously treated with O-2 plasma or UV-O-3. The presence of a DPh-DNTT layer on the substrate was also confirmed by micro-Raman measurement.
ELSEVIER, Nov. 2019, ORGANIC ELECTRONICS, 74, 245 - 250, English[Refereed]
Scientific journal
The thin-films of 2,9-diphenyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DPh-DNTT) prepared by vacuum deposition was observed by the optical microsope. By applying the dark-field mode in observation and/or image processing after imaging appropriately, morphological structure with a resolution of a few nanometers height was visualized easily and quickly. The technique can be used in a similar to atomic force microscopy, which is commonly used for imaging surface morphology. Moreover, the vibrational modes of a DPh-DNTT molecule calculated by quantum chemistry program is described as well as the comparison of the experimental Raman spectra for identification. The presented data are produced as part of the main work entitled "The Growth Mechanism and Characterization of Few-layer Diphenyl Dinaphthothienothiophene Films Prepared by Vacuum Deposition" (Hattori et al., 2019). (C) 2019 The Author(s). Published by Elsevier Inc.
ELSEVIER, Oct. 2019, DATA IN BRIEF, 26, English[Refereed]
Scientific journal
Pentacene metal-oxide-semiconductor capacitors having a channel area uncovered with the top electrode have been examined by capacitance-voltage (C-V) and capacitance-frequency (C-f) measurements. The C-V and C-f characteristics were reproduced using an equivalent circuit based on a distributed constant circuit. The sheet resistance, which characterizes carrier transport in the pentacene film, was obtained as a sheet resistance included in the equivalent circuit reproducing the measured characteristics.
May 2019, 2019 Compound Semiconductor Week, CSW 2019 - ProceedingsInternational conference proceedings
The growth mechanism of 2,9-diphenyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DPh-DNTT) thin-films prepared by vacuum evaporation was investigated from a view point of the morphological crystallinity. In addition to atomic force microscopy, which is commonly used for imaging the morphology of surfaces, optical microscopy was positively used for the same purpose. The method allows quick and easy evaluation of the thin-film. In fact, an isolated, round, monolayer 2D island on the SiO2 substrate in initial stage and fractal-shape 2D islands on top surface of thin-film were observed. The nucleation density which depends on substrate temperature and surface treatment was investigated to clarified the growth mechanism.
May 2019, 2019 Compound Semiconductor Week, CSW 2019 - ProceedingsInternational conference proceedings
Pentacene thin-film transistors (TFTs) with controlled threshold voltages have been applied to a ring oscillator consisting of enhancement/depletion inverters for evaluation of the dynamic characteristics. The threshold voltage control was demonstrated by using oxygen plasma treatment to the SiO2 gate dielectric prepared by rf sputtering. The surface roughness of the SiO2 gate dielectric depended on the sputtering condition. The use of flat SiO2 gate dielectrics contributed to the improvement of the field-effect mobilities in pentacene TFTs. As a result, the ring oscillator operated at supply voltages of 15-25 V. The oscillation frequency was consistent with the result of circuit simulation for the ring oscillator. (C) 2019 The Japan Society of Applied Physics
IOP PUBLISHING LTD, Apr. 2019, JAPANESE JOURNAL OF APPLIED PHYSICS, 58, English[Refereed]
Scientific journal
Oxygen plasma treatment has been carried out to control the threshold voltage in organic thin-film transistors (TFTs) having a SiO2 gate dielectric prepared by rf sputtering. The threshold voltage linearly changed in the range of -3.7 to 3.1 V with the increase in plasma treatment time. Although the amount of change is smaller than that for organic TFTs having thermally grown SiO2, the tendency of the change was similar to that for thermally grown SiO2. To realize different plasma treatment times on the same substrate, a certain region on the SiO2 surface was selected using a shadow mask, and was treated with oxygen plasma. Using the process, organic TFTs with negative threshold voltages and those with positive threshold voltages were fabricated on the same substrate. As a result, enhancement/depletion inverters consisting of the organic TFTs operated at supply voltages of 5 to 15V. (C) 2018 The Japan Society of Applied Physics
IOP PUBLISHING LTD, Mar. 2018, JAPANESE JOURNAL OF APPLIED PHYSICS, 57 (3), 03EH03-1 - 03EH03-5, English[Refereed]
Scientific journal
- 応用物理学会, Feb. 2017, 応用物理, 86 (2), 122 - 126, Japanese論理回路応用のための有機トランジスタ
[Refereed]
Scientific journal
Oxide-semiconductor based gas sensors have been intensively investigated in order to improve the sensitivity and selectivity of a certain gas. This article reviews the recent research progress of gas sensors having oxide semiconductor as an active layer, in particular detecting for H2 and volatile organic compounds. The semiconductor material for gas sensors reported in this article includes SnO2, WO3, ZnO, In2O3, and NiO. The sensitivity of gas sensors having different structures and semiconductors is compared.
Corresponding, The Vacuum Society of Japan, Feb. 2017, Journal of the Vacuum Society of Japan, 60 (11), 415 - 420, Japanese[Refereed]
Scientific journal
© 2016 The Society of Materials Science, Japan. Thin film solar cells using perovskite materials are very intensively studied since the perovskite materials such as CH3NH3PbI3 crystal have been found to show sensitizing effects on a TiO2 electron transport layer. This class of solar cell has made tremendous progress during the last few years, leading to a recently certified record power conversion efficiency (PCE) of 21.02%. In the perovskite /crystalline-Si (c-Si) tandem solar cell, furthermore, the theoretical value of PCE is expected as large as 35 %. Toward this application, the perovskite solar cell must be highly transparent at near-infrared wavelengths so that sufficient light is transmitted to the narrow-bandgap bottom cell. In this study, we fabricated the organic-lead halide perovskite solar cells comprising a transparent sputtered indium tin oxide (ITO) top electrode. We observed the PCE of 1.5% in transparent perovskite solar cells with a thin molybdenum oxide buffer layer and ITO electrode. Moreover, we obtained the PCE of 2% even in solar cells with ITO electrode sputtered directly on the organic charge transport layer. The photovoltaic property could be confirmed under the light irradiation from the ITO top electrode side.
Sep. 2016, Zairyo/Journal of the Society of Materials Science, Japan, 65 (9), 642 - 646, Japanese[Refereed]
Scientific journal
The water wettability of Au surfaces has been controlled using various benzenethiol derivatives including 4-methylbenzenethiol, pentafluorobenzenethiol, 4-fluorobenzenethiol, 4-methoxybenzenethiol, 4-nitrobenzenethiol, and 4-hydroxybenzenethiol. The water contact angle of the Au surface modified with the benzenethiol derivative was found to vary in the wide range of 30.9 degrees to 88.3 degrees. The contact angle of the modified Au films annealed was also measured in order to investigate their thermal stability. The change in the contact angle indicated that the modified surface is stable at temperatures below about 400 K. Meanwhile, the activation energy of desorption from the modified surface was estimated from the change in the contact angle. The modified Au surface was also examined using X-ray photoelectron spectrosocopy.
AMER SCIENTIFIC PUBLISHERS, Apr. 2016, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 16 (4), 3295 - 3300, English[Refereed]
Scientific journal
The threshold voltage in p-channel organic thin-film transistors ( TFTs) having dinaphthothienothiophene as a channel material has been investigated toward their applicability to logic circuits. Oxygen plasma treatment of the gate dielectric surface was carried out to control the threshold voltage. The threshold voltage changed in the range from -6.4 to 9.4V, depending on plasma treatment time and the thickness of the gate dielectric. The surface charge after plasma treatment was estimated from the dependence of the threshold voltage. Operation of logic inverters consisting of TFTs with different threshold voltages was demonstrated as an application of TFTs with controlled threshold voltage. (C) 2016 The Japan Society of Applied Physics
IOP PUBLISHING LTD, Mar. 2016, JAPANESE JOURNAL OF APPLIED PHYSICS, 55 (3), English[Refereed]
Scientific journal
The surface properties, including work function and wettability, of Au and Ag surfaces modified with various substituted benzenethiols have been investigated. Whereas the work functions of the modified Au surfaces ranged from 4.42 to 5.48 eV, those of the modified Ag surfaces ranged from 3.99 to 5.77 eV. The highest work function of 5.77 eV was obtained on the Ag surface modified with pentafluorobenzenethiol, and the lowest work function of 3.99 eV was obtained on the Ag surface modified with 4-methylbenzenethiol. The water contact angle on modified Au surfaces was found to be in a wide range from 30.9 to 88.3 degrees. The water contact angle on the Au surface modified with a substituted benzenethiol was close to that on the Ag surface modified with the same benzenethiol. Furthermore, the tension of the modified Au surfaces was estimated from their contact angles of water and ethylene glycol. (C) 2016 The Japan Society of Applied Physics
IOP PUBLISHING LTD, Mar. 2016, JAPANESE JOURNAL OF APPLIED PHYSICS, 55 (3), English[Refereed]
Scientific journal
Pentacene-based organic thin-film transistors (TFTs) having a SiO2 gate dielectric treated with oxygen plasma have been investigated for control of the threshold voltage. The threshold voltage changed in the wide range from % 15 to 80V, depending on plasma treatment time, AC power for plasma generation, and gate dielectric thickness. The threshold voltage change was attributed to negative charges induced on and/or near the surface of the gate dielectric. The threshold voltage change on the order of 1 V was particularly proportional to plasma treatment time. The predictable change enables the control of threshold voltage in this range. In addition, the effect of gate bias stress on threshold voltage was examined. The results suggested that gate bias stress does not negate the threshold voltage change induced by plasma treatment. (C) 2016 The Japan Society of Applied Physics
IOP PUBLISHING LTD, Feb. 2016, JAPANESE JOURNAL OF APPLIED PHYSICS, 55 (2), English[Refereed]
Scientific journal
The morphology and current-voltage characteristics of organic films with copper phthalocyanine (CuPc) and hexadecafluoro CuPc (F16CuPc) prepared under different conditions have been investigated. Substrate heating improved the current-voltage characteristics of CuPc single-layer devices. Also, substrate heating from room temperature suppressed breakdown at low voltages in F16CuPc devices. In addition, the post-annealing effects under pressure on the current-voltage characteristics of CuPc/F16CuPc devices were investigated. Although a CuPc/F16CuPc device prepared at a substrate temperature of 120 degrees C exhibited a reverse rectifying property and provided no photocurrent, a CuPc/F16CuPc device post-annealed at 300 degrees C under pressure showed a normal rectifying property and worked as a photovoltaic cell. (C) 2014 The Japan Society of Applied Physics
IOP PUBLISHING LTD, Apr. 2014, JAPANESE JOURNAL OF APPLIED PHYSICS, 53 (4), 1 - 4, English[Refereed]
Scientific journal
The work function of Au surfaces modified with various substituted benzenethiols has been systematically investigated for application to the design of organic electronic devices. The work function was found to vary in the range of 4.37 to 5.48 eV depending on the substituted benzenetniol used, which included pentafluorobenzenethiol, 4-fluorobenienethiol, 4-methylbenzenethiol, 4-aminobenzenethiol, and 4-(dimethylamina)benzenethiol. Subsequent thermal annealing of the modified Au films above 373 K changed the work function back to that of an unmodified Au surface. Meanwhile, thermal desorption spectroscopy revealed species desorbing from the modified Au surfaces, indicating cleavage of the C S bond as well as the S Au bond. (C) 2014 The Japan Society of Applied Physics
IOP PUBLISHING LTD, Mar. 2014, APPLIED PHYSICS EXPRESS, 7 (3), 1 - 35701, English[Refereed]
Scientific journal
The electronic structures of copper phthalocyanine (CuPc) and fluorinated CuPc, FxCuPc (x = 4, 8, 12, and 16), have been investigated by density functional theory. The HOMO and LUMO energies systematically decrease with an increase in the number of fluorine atoms. The degree of the decrease depends on the position of the substitution of hydrogen with fluorine. The HOMO (LUMO) energies vary in the range of -5.33 to -6.82 eV (-3.12 to -4.65 eV). The UV-visible absorption spectra and photoelectron ionization energies of the deposited FxCuPc (x = 0, 8, and 16) thin films are compared with the calculation results. The calculated bandgap energies and HOMO levels are consistent with those obtained from the experimental results. (C) 2014 The Japan Society of Applied Physics
IOP PUBLISHING LTD, Jan. 2014, JAPANESE JOURNAL OF APPLIED PHYSICS, 53 (1), 01AB03, English[Refereed]
Scientific journal
We have demonstrated high performance inkjet-printed n-channel thin-film transistors (TFTs) using C-60 fullerene as a channel material. Highly uniform amorphous C-60 thin-film patterns were fabricated on a solution-wettable polymer gate dielectric layer by inkjet-printing and vacuum drying process. Fabricated C-60 TFTs shows great reproducibility and high performance; field-effect mobilities of 2.2-2.4 cm(2) V-1 s(-1), threshold voltages of 0.4-0.6 V, subthreshold slopes of 0.11-0.16 V dec(-1) and current on/off ratio of 10(7)-10(8) in a driving voltage of 5 V. This is due to the efficient annealing process that extracting the solvent residue and the formation of low trap-density gate dielectric surface. (C) 2012 Elsevier B. V. All rights reserved.
ELSEVIER SCIENCE BV, Feb. 2013, ORGANIC ELECTRONICS, 14 (2), 644 - 648, English[Refereed]
Scientific journal
Short-channel, high-mobility organic transistors have been demonstrated using alkylated dinaphthothienothiophene. The field-effect mobility for a transistor with a channel length of 2 mu m was 1.46 cm(2)/Vs at operation of -15 V. The transconductance of the transistor reached to 500 mu S/mm, which is one of the highest values in pchannel organic transistors. The high mobility in short-channel transistors is attributed to low contact resistance caused by Au/AuNi electrodes modified with pentafluorobenzenethiol. An illustration of a fabricated C-10-DNTT thin-film transistor with PFBT-modified electrodes. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
WILEY-V C H VERLAG GMBH, 2013, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11, 10 (11), 1632 - 1635, English[Refereed]
International conference proceedings
We have demonstrated high mobility C-60 single-crystal field-effect transistors formed by a solution process. 1,2,4-Trichlorobenzene (TCB) C-60 solution formed plate like crystals with sizes exceeding 500 mu m. We found that the C-60 single crystals prepared from solution consist of two TCB molecules per C-60 molecule, with a triclinic crystal structure. TCB molecules in C-60 crystals are extracted by an annealing process, and the crystal structure was changed to a face-centered-cubic structure. The C-60 single crystal prepared from TCB solution showed typical n-channel operation and high electron mobilities of up to 1.4 cm2 V-1 s(-1). (C) 2012 The Japan Society of Applied Physics
IOP PUBLISHING LTD, Nov. 2012, JAPANESE JOURNAL OF APPLIED PHYSICS, 51 (11), 1 - 11, English[Refereed]
Scientific journal
We demonstrated solution-processed C-60 thin-film transistors with high electron mobility. C-60 solutions in various organic solvents were dried in a vacuum chamber to obtain uniform thin films. While C-60 solution dried under atmospheric pressure produced a large number of crystals, vacuum-dried C-60 solution provided flat and uniform thin films of sufficiently high quality to fabricate thin-film transistors. In spite of amorphous-like thin-film formation, C-60 transistors showed strong solvent dependence. High performance C-60 thin-film transistors with field-effect mobility of 0.86 cm(2) V-1 s(-1), threshold voltage of 1.5 V, subthreshold slope of 0.67 V/decade and a current on/off ratio of 3.9 x 10(6) were obtained from 1,2,4-trichlorobenzene C-60 solution. (C) 2012 The Japan Society of Applied Physics
IOP PUBLISHING LTD, Feb. 2012, JAPANESE JOURNAL OF APPLIED PHYSICS, 51 (2), 1 - 2, English[Refereed]
Scientific journal
The current-gain cutoff frequency for bottom contact p-channel pentacene thin-film transistors (TFTs) with channel lengths of 2-10 mu m has been investigated. A maximum cutoff frequency of 11.4 MHz was obtained from a pentacene TFT with a channel length of 2 mu m and a saturation mobility of 0.73 cm(2)/Vs.
Lead, AMER INST PHYSICS, Dec. 2011, AIP Conference Proceedings, 1399 (1), 883, English[Refereed]
International conference proceedings
Solution-processed C-60 fullerene field-effect transistors with high electron mobility were demonstrated by using a novel drying process. Highly uniform and flat C-60 layers were prepared from a C-60 solution when the solution was rapidly dried in a vacuum chamber. Field-effect transistors with solution-deposited C-60 active layers showed electron mobility of up to 0.86 cm(2) V-1 s(-1), threshold voltage of 3 V, subthreshold slope of 0.67 V/decade, and a current on/off ratio of 4 x 10(6). The mobilities of solution-deposited C-60 transistors were comparable to those of vacuum-deposited C-60 transistors. (C) 2011 The Japan Society of Applied Physics
JAPAN SOC APPLIED PHYSICS, Dec. 2011, APPLIED PHYSICS EXPRESS, 4 (12), 1 - 121602, English[Refereed]
Scientific journal
- Nov. 2011, 応用物理学会 有機分子・バイオエレクトロニクス分科会 会誌, Vol.22 No.4 pp.231-236, Japanese高速動作有機CMOS回路の実現に向けて
Scientific journal
Organic complementary circuits consisting of bottom-contact p-channel pentacene and n-channel C(60) thin-film transistors (TFTs) have been fabricated to evaluate their dynamic properties. Modified drain and source electrodes were used to balance the threshold voltages of the pentacene and C(60) TFTs. The balanced threshold voltage allowed use of equal-size channel dimensions for both channel-type TFTs in the circuits. The signal delay per stage of a five-stage ring oscillator was consistent with the mobilities of the individual TFTs. The oscillation frequency increased with supply voltage up to 200 kHz, which is the highest frequency in organic five-stage complementary ring oscillators. (C) 2011 The Japan Society of Applied Physics
JAPAN SOC APPLIED PHYSICS, May 2011, APPLIED PHYSICS EXPRESS, 4 (5), 1 - 51601, English[Refereed]
Scientific journal
- May 2011, 応用物理学会 有機分子・バイオエレクトロニクス分科会 会誌, Vol. 22 No.2 pp.71-74, English高速動作有機トランジスタに向けた有機無機界面制御
Scientific journal
The current-gain cutoff frequencies for bottom contact n-channel C-60 and p-channel pentacene thin-film transistors (TFTs) with channel lengths of 2-10 mu m have been investigated. The cutoff frequency was estimated by direct measurement of the gate and drain modulation currents. The measured cutoff frequencies for both C-60 and pentacene TFTs increase consistently with reducing channel length. Cutoff frequencies of 27.7 and 11.4 MHz were obtained from C-60 and pentacene TFTs with a channel length of 2 mu m, respectively. (C) 2011 The Japan Society of Applied Physics
JAPAN SOC APPLIED PHYSICS, Jan. 2011, JAPANESE JOURNAL OF APPLIED PHYSICS, 50 (1), 1 - 1, English[Refereed]
Scientific journal
Layer-by-layer formation for pi-conjugated azomethine multilayers bonded on substrates was investigated. The multilayers were synthesized using ethanol (EtOH) and dichloromethane (DCM) as reaction solvents. The multilayer characteristics were analyzed using UV-vis absorption spectroscopy, ellipsometric thickness, and atomic force microscopy. The absorption spectra and ellipsometric thicknesses of multilayers formed using EtOH and DCM were compared. The results indicate that EtOH is more suitable than DCM for such layer-by-layer formation. In addition, bandgaps estimated from the absorption edge of multilayers were investigated. The results indicate that the bandgap decreases as the number of benzene rings contained in the molecular chain of the multilayer increases. Also, a multilayer with four benzene rings bonded on a substrate had a bandgap close to that of a polymer with a similar chemical structure. (c) 2010 Elsevier B.V. All rights reserved.
ELSEVIER SCIENCE SA, Jul. 2010, THIN SOLID FILMS, 518 (18), 5115 - 5120, English[Refereed]
Scientific journal
Bottom-contact pentacene thin-film transistors (TFTs) with different electrode types have been fabricated to investigate influence of the adhesion layers and surface modification on the transistor characteristics. Gold-nickel alloy or Ti was used for the adhesion layer; the drain/source electrodes were modified with pentafluorobenzenethiol (PFBT) or nonmodified. The TFTs with AuNi layers and PFBT-modified electrodes exhibit channel-length independent saturation mobility. The electrode-type TFT with a channel length of 2.2 mu m has a saturation mobility of 0.73 cm(2)/V s and a transconductance of 229 mu S/mm. The high performance is attributed to the low contact resistance of 408 cm. (C) 2010 American Institute of Physics. [doi:10.1063/1.3465735]
AMER INST PHYSICS, Jul. 2010, APPLIED PHYSICS LETTERS, 97 (3), 33306, English[Refereed]
Scientific journal
We report, as the result of shelf-life tests for Esaki diodes, the observation of minute but tangible reductions in the tunnel current after the lapse of half a century. The reduction could be attributed to 0.25% widening in the tunnel path.
JAPAN ACAD, Apr. 2010, PROCEEDINGS OF THE JAPAN ACADEMY SERIES B-PHYSICAL AND BIOLOGICAL SCIENCES, 86 (4), 451 - 453, English, Domestic magazine[Refereed]
Scientific journal
- NATURE PUBLISHING GROUP, Mar. 2010, NATURE, 464 (7285), 31 - 31, English, International magazine
[Refereed]
Complementary use of p-type organic and n-type oxide semiconductors is presented. First, we demonstrated complementary circuits using low-voltage operating high performance pentacene and amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The field-effect mobilities of the pentacene and a-IGZO transistors are 0.6 and 17.1 cm(2)/V s, respectively at an operating voltage of 10 V. A complementary inverter composed of these transistors exhibits good voltage transfer characteristics with a high gain of similar to 56. A five-stage ring oscillator with the inverters yields an output frequency of 200 Hz at 10 V, corresponding to a propagation delay of 1 ms. Second, together with the electrical device, we demonstrated an optoelectronic device, light-emitting diodes (LEDs), using organic/oxide hybrid junctions. The hybrid p-n junction LEDs are composed of N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (alpha-NPD) and sputtered ZnO. Similar with conventional p-n junction diodes, the hybrid junction shows a good current rectification and electroluminescence (EL) under forward bias. We found that the EL bands from the device agree well with the photoluminescence peaks from alpha-NPD and ZnO, implying the radiative recombination of injected charges occurs in both components of the junction.
SPIE-INT SOC OPTICAL ENGINEERING, 2010, OXIDE-BASED MATERIALS AND DEVICES, 7603, English[Refereed]
International conference proceedings
- AIP Publishing, 21 Dec. 2009, Applied Physics Letters, 95 (25), 253303 - 253303
[Refereed]
Scientific journal
The current-gain cutoff frequency for bottom contact n-channel C(60) thin-film transistors (TFTs) with channel lengths of 2-10 mu m has been investigated. Patterned gate electrodes were adopted to reduce parasitic capacitance of the TFTs. The cutoff frequency was estimated by direct measurement of the gate and drain modulation currents. The estimated cutoff frequency increases consistently with reducing channel length. A maximum cutoff frequency of 20.0 MHz was obtained from a C(60) TFT with a channel length of 2 mu m and a saturation mobility of 1.11 cm(2)/V s.
AMER INST PHYSICS, Jul. 2009, APPLIED PHYSICS LETTERS, 95 (2), English[Refereed]
Scientific journal
We fabricated a hybrid p-n junction structure using n-type InGaN/GaN multiple quantum wells (MQWs) and p-type N,N-'-diphenyl-N,N-'-bis(1-naphthyl)-1,1(')-biphenyl-4,4(')-diamine (alpha-NPD). The hybrid structure shows a good current rectifying characteristic similar with conventional p-n junction diodes. Electroluminescence (EL) of the hybrid device exhibits two emission bands originated from InGaN/GaN MQWs, as well as alpha-NPD layer. The EL properties can be explained by either (or both) electron-hole charge transport between the components or (and) efficient energy transfer via Foster mechanism. The device characteristics could be applicable to various multicolor light-emitting diodes by constructing other organic/inorganic hybrid junctions.
AMER INST PHYSICS, May 2009, APPLIED PHYSICS LETTERS, 94 (21), English[Refereed]
Scientific journal
Bottom-contact n-channel C(60) thin-film transistors (TFTs) with drain/source electrodes modified by benzenethiol derivatives have been fabricated to investigate the influence of the modification on the transistor characteristics. Modification using methylbenzenethiol, aminobenzenethiol, and (dimethylamino)benzenethiol having electron-donating groups causes threshold voltages to shift to low voltages. In addition, the modification provides no significant decrease in saturation mobilities. A C(60) TFT with (dimethylamino)benzenethiol-modified electrodes has a low threshold voltage of 5.1 V as compared to that of 16.8 V for a TFT with nonmodified electrodes. The threshold-voltage shift is probably because the modification reduces electron-injection barrier height and improves electron injection into organic semiconductors.
AMER INST PHYSICS, Feb. 2009, APPLIED PHYSICS LETTERS, 94 (8), English[Refereed]
Scientific journal
Low-voltage-operating organic complementary inverters and ring oscillators were fabricated using high field effect mobility pentacene and C-60 thin-film transistors (TFTs). The mobilities of pentacene and C-60 TFTs were 0.44 and 0.61 cm(2)/V s, respectively. The complementary inverters composed of these TFTs operated in the voltage range of 2-10 V with large gain values up to 65. The inverter yields 5-stage ring oscillators with a high oscillation frequency of 80 Hz at 10 V. (C) 2008 Elsevier B.V. All rights reserved.
ELSEVIER SCIENCE SA, Jan. 2009, THIN SOLID FILMS, 517 (6), 2079 - 2082, English[Refereed]
Scientific journal
Complementary inverters composed of pentacene for the p-channel thin-film transistors (TFTs) and amorphous indium gallium zinc oxide for the n-channel TFTs have been fabricated on glass substrates. The p- and n-channel TFTs have field-effect mobilities of 0.6 and 17.1 cm(2)/V s, respectively, and inverters yield a high gain of similar to 56. Complementary five-stage ring oscillator exhibits a good dynamic operation with an output frequency of 200 Hz at 10 V. Since both channel layers are stable in air and can be formed by room temperature deposition process, the hybrid circuits are applicable to flexible electronic devices.
AMER INST PHYSICS, Nov. 2008, APPLIED PHYSICS LETTERS, 93 (21), English[Refereed]
Scientific journal
We report on the device characteristics of amorphous indium gallium zinc oxide thin-film transistors (TFTs) with aluminum (Al) electrodes. The TFTs exhibited a high performance with a field-effect mobility of 11.39 cm(2)/V s, a subthreshold swing of 181 mV/ decade, and an on-off ratio of 10(7). Further improvement in device performance was achieved by doping the source/drain contact regions, resulting in an enhanced mobility of 16.6 cm(2)/V s at an operating voltage as low as 5 V. (C) 2008 American Institute of Physics.
AMER INST PHYSICS, Aug. 2008, APPLIED PHYSICS LETTERS, 93 (6), English[Refereed]
Scientific journal
Fullerene C(60) thin-film transistors (TFTs) with bottom-contact structure have been fabricated. The parasitic resistance was extracted using gated-transmission line method. The drain/source electrodes consisted of a single Au layer with no adhesion layer; the channel lengths ranged from 5 to 40 mu m. The field-effect mobilities in the saturation regime slightly depended on the channel length, ranging from 2.45 to 3.23 cm(2)/V s. The mobility of 3.23 cm(2)/V s was obtained from the TFT with a channel length of 5 mu m and is the highest in organic TFTs with bottom-contact structure. The high mobility is due to the low parasitic resistance. (C) 2008 American Institute of Physics.
AMER INST PHYSICS, Jul. 2008, APPLIED PHYSICS LETTERS, 93 (3), 33313, English[Refereed]
Scientific journal
Organic field-effect transistors (FETs) have attracted considerable attention because of their potential for realizing large-area, mechanically flexible, lightweight and low-cost devices. Pentacene, which is a promising material for organic FETs, has been intensely studied. This article reviews the basic properties of pentacene films and crystals, and the characteristics of pentacene FETs fabricated under various conditions, including our recent achievement of low-voltage operating high-mobility FETs. The basic properties include the crystal polymorph, the band structure and the effective mass. These data have been used for discussion of carrier transport and mobility in pentacene films. The characteristics of pentacene FETs generally depend on the conditions of the pentacene film and the gate-dielectric surface. The dependences are summarized in the article. In addition, liquid-crystal displays and organic light-emitting device arrays using pentacene FETs are reviewed as applications of organic FETs, and complementary metal-oxide-semiconductor circuits using our low-voltage operating FETs are also shown.
IOP PUBLISHING LTD, May 2008, JOURNAL OF PHYSICS-CONDENSED MATTER, 20 (18), 1 - 16, English[Refereed]
We fabricated two-input NAND gates composed of p-channel pentacene and n-channel C-60 transistors. The logic devices were prepared on flexible polymer substrates through a shadow mask process. Correct NAND logic functionality was demonstrated at a wide voltage range of 2 - 7V. From voltage transfer characteristics of the NAND gates, we obtained impressive signal gains up to 120 and large noise margins in the given voltage range. (c) 2008 The Japan Society of Applied Physics.
IOP PUBLISHING LTD, Feb. 2008, APPLIED PHYSICS EXPRESS, 1 (2), English[Refereed]
Scientific journal
A novel technique for the fabrication of photonic crystal (PC) nanocavities coupled with colloidal nanocrystals is presented. A waveguiding resist membrane embedding highly emitting dot-in-a-rod nanocrystals was patterned through e-beam lithography and released through wet etching process. The proposed approach makes the PC structure independent of fabrication imperfections induced by etching steps. Micro-photoluminescence spectra revealed degenerated resonant modes (Q-factor similar to 700) whose fabrication-induced spectral splitting is comparable to the full width at half-maximum of the peaks. Active nanocavities tunable from visible to infrared spectral range on GaAs or Si substrates can be easily implemented by this technique.
AMER CHEMICAL SOC, Jan. 2008, NANO LETTERS, 8 (1), 260 - 264, English, International magazine[Refereed]
Scientific journal
Influence of surgace treatment on fullerne C-60 thin-film transistors (TFTs) has been investingated. Phenyltrimethoxysilane (PTS), Hexamethldisilazane (HMDS) and octadecytrimethoxysilane (ODS) were used for the surface treatment. The treated surface was investigated by water-contact-angle measurement and the C-60 deposited on the surface was observed with scanning electron microscope. As a result, C-60 TFT with the ODS-treated insulator exhibited the highest field-effect mobility of 1.46 cm(2)/Vs. In addition, the TFTs operated at a low voltage of 5 V by adopting high-dielectric-constant gate insulator. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
WILEY-V C H VERLAG GMBH, 2008, PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 5 (9), 3181 - +, English[Refereed]
International conference proceedings
We fabricated high mobility, low voltage n-channel transistors on plastic substrates by combining an amorphous phase C-60 film and a high dielectric constant gate insulator titanium silicon oxide (TiSiO2). The transistors exhibited high performance with a threshold voltage of 1.13 V, an inverse subthreshold swing of 252 mV/decade, and a field-effect mobility up to 1 cm(2)/V s at an operating voltage as low as 5 V. The amorphous phase C-60 films can be formed at room temperature, implying that this transistor is suitable for corresponding n-channel transistors in flexible organic logic devices.
AMER INST PHYSICS, Nov. 2007, APPLIED PHYSICS LETTERS, 91 (19), English[Refereed]
Scientific journal
Low-voltage operation of fullerene C-60 thin-film transistors (TFTs) has been realized using zirconium-silicon oxide (ZSO) as a gate insulator. The gate insulator consisted of triple layers of SiO2/ZSO/SiO2 deposited by rf sputtering. The C-60 TFTs with the insulators operated at a low voltage of 5 V. The surface of the insulator was treated with hexamethyldisilazane (HMDS) or octadecyltrimethoxysilane (ODS). The C-60 TFT with the ODS-treated insulator exhibited higher performance than that with the HMDS-treated insulator, and it had a field-effect mobility of 1.46 cm(2)/V s, threshold voltage of 1.9 V, and a current on/off ratio of 2x10(6). (C) 2007 American Institute of Physics.
AMER INST PHYSICS, Oct. 2007, APPLIED PHYSICS LETTERS, 91 (18), English[Refereed]
Scientific journal
Organic complementary inverters with C-60 and pentacene thin-film transistors (TFTs) have been fabricated on glass substrate. The inverter operated at low voltages of 1-5 V. The C-60 and pentacene TFTs had high field-effect mobilities of 0.68 and 0.59 cm(2)/V s, and threshold voltage of 0.80 and -0.84 V, respectively. The low threshold voltage enables the low voltage operation of the inverter. (C) 2007 American Institute of Physics.
AMER INST PHYSICS, Jul. 2007, APPLIED PHYSICS LETTERS, 91 (5), English[Refereed]
Scientific journal
Pentacene thin-film transistors (TFTs) with a high dielectric constant gate insulator, titanium silicon oxide (TiSiO2), were fabricated on flexible polyethylene naphthalate films coated with indium tin oxide layers. In order to define the device characteristics, the thickness dependence of the gate dielectric properties was studied. The pentacene TFT with a 132-nm-thick TiSiO2 film showed high performance with a threshold voltage of -0.88 V, an inverse subthreshold slope of 317 mV/decade. From the current-voltage characteristics, the field-effect mobility was obtained, resulting in an impressive mobility of 0.67 cm(2)/V s at an operating voltage as low as -5 V. (C) 2007 American Institute of Physics.
AMER INST PHYSICS, Apr. 2007, APPLIED PHYSICS LETTERS, 90 (16), English[Refereed]
Scientific journal
We report the fabrication of Ill-nitride air-bridge photonic crystals with GaN quantum dots for the first time. Photonic crystals with various periodicities and airhole diameters were fabricated. Abrupt vertical profiles and high aspect ratio (similar to 3) were achieved with excellent reproducibility even to the structure with periodicity as small as 150 run. The fabrication of air-bridge structure utilizing photoelectrochernical etching of SiC was demonstrated. Strong photoluminescence enhancement by a factor of 5 was observed from GaN QDs embedded in the air-bridge PC layer. This is due to the coupling of PL light with photonic bands above the light cone, thus results in the enhanced light extraction efficiency. These results will lead to the realization of high efficiency quantum dots based emitting devices in blue and ultraviolet range. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
WILEY-V C H VERLAG GMBH, 2007, PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1, 4 (1), 90 - +, English[Refereed]
International conference proceedings
- Flexible organic LEDs with parylene thin films for biological implants
This paper describes an ultra thin, flexible device with organic light emitting diodes (OLEDs) between Parylene thin films (20 mu m or less in total thickness). The device was formed on a glass substrate and could be easily peeled off without breaking. The OLEDs in the flexible device emitted light with high brightness, and were useful as excitation light sources for fluorescent dyes. We have also demonstrated a flexible probe with an OLED for the application of biological implants toward in vivo fluorescent imaging and optical stimulation of cells.
IEEE, 2007, PROCEEDINGS OF THE IEEE TWENTIETH ANNUAL INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, VOLS 1 AND 2, 674 - +, English[Refereed]
International conference proceedings
- Lead, Nov. 2006, レーザー研究, 34 (11), 767 - 772, JapaneseOrganic Light-Emitting Devices Using Photonic Crystals
[Refereed]
Scientific journal
Pentacene thin-film transistors (TFTs) with titanium silicon oxide (Ti1-xSixO2) gate insulator have been fabricated to realize high field-effect mobility at practical voltages. The Ti1-xSixO2 films deposited by rf sputtering exhibited a flat surface and high dielectric constant. The pentacene TFT with the Ti1-xSixO2 gate insulator had high performance with a threshold voltage of -1.6 V, an inverse subthreshold slope of 0.13 V/decade, and a current on/off ratio of 10(7) at a voltage of -10 V. The field-effect mobilities of higher than 1 cm(2)/V s were obtained in the whole voltage range of -2 to -15 V.
AMER INST PHYSICS, Nov. 2006, APPLIED PHYSICS LETTERS, 89 (22), EnglishScientific journal
Organic-based photonic crystal (PC) nanocavities emitting in the visible-light range have been demonstrated. Three types of organic layer were used as emitting layers for PCs with emission spectra in the blue, green and red light wavelength ranges. Emission peaks caused by the resonant modes of the PC nanocavities were observed. The wavelength of the peak was controlled by changing the lattice constant of the PC. The emission peaks were observed in the wavelength range of 435 to 747 nm.
INST PURE APPLIED PHYSICS, Aug. 2006, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45 (8A), 6112 - 6115, English[Refereed]
Scientific journal
Soluble polymethacrylates having pendent tris(8-hydroxyquinolinato) aluminum (Alq(3)) moieties were synthesized and applied to organic light emitting diode (OLED). 8-Hydroxyquinolines (8-HQs) having secondary alkyl groups at 7-position were employed as ligands as it is expected that these alkyl groups prevent external molecules from accessing to the metal center of the complexes leading to suppression of ligand-exchange-induced crosslinking and insolubilization. The ligands were synthesized from 7-methoxycarbonyl-8-hydroxyquinoline via alkylation with Grignard reagents and subsequent reductive dehydroxylation. These ligands were then derivatized to polymeric ligands through chloromethylation at 5-position, introduction of (methacryloyloxy) ethoxy moiety by Williamson ether synthesis, and radical polymerization. Complex formation with aluminum cation was carried out for various combinations of low-molecular-weight and polymer ligands. Some of the polymers obtained were soluble in organic solvents. Two-layer-type OLED devices were then prepared from the soluble Alq(3)-pendent polymers and poly (vinyl carbazole). Alq3-pendent polymers having 8-HQs with smaller 7-alkyl groups gave devices with better light-emitting efficiency compared to those with larger 7-alkyl groups.
SOC POLYMER SCIENCE JAPAN, 2006, KOBUNSHI RONBUNSHU, 63 (10), 696 - 703, Japanese[Refereed]
Scientific journal
- Wiley, Dec. 2005, Small, 1 (12), 1168 - 1172, English
[Refereed]
Scientific journal
An organic photonic crystal (PC) with a nanocavity has been fabricated on a SiO2 membrane with air holes. The emission peak caused by the resonant mode of the nanocavity was clearly observed from the nanocavity area of the PC. The emission peak corresponded to degenerated dipole modes from comparison between measured and calculated results. Modification of a nanocavity caused the peak splitting of dipole modes and the appearance of a peak corresponding to a hexapole mode. The emission peak with a quality factor of about 1000 was obtained from a PC with a modified nanocavity. (C) 2005 American Institute of Physics.
AMER INST PHYSICS, Oct. 2005, APPLIED PHYSICS LETTERS, 87 (15), EnglishScientific journal
- AIP Publishing, 22 Aug. 2005, Applied Physics Letters, 87 (8), 083902 - 083902, English
[Refereed]
Scientific journal
Organic light-emitting diodes (OLEDs) with two-dimensional photonic crystal were fabricated to improve their light-extraction efficiency. The electroluminescence (EL) spectra from these OLEDs depended on the lattice constant of the photonic crystal. The relationship between the EL spectra and the lattice constant was investigated. On the basis of this investigation, a lattice constant was optimized to obtain a large improvement in luminance. In addition, OLEDs doped with coumarin 6 provided a larger improvement in luminance than nondoped OLEDs. The coumarin 6 doped OLED with the optimized lattice constant provided improvements of 62% in luminance in the normal direction and 25% in spatially integrated EL intensity.
JAPAN SOC APPLIED PHYSICS, Apr. 2005, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44 (4B), 2844 - 2848, EnglishScientific journal
- Enhanced light emission of an organic semiconductor based two-dimensional photonic crystal with a nanocavity
Organic based two-dimensional photonic crystals with a nanocavitiy have fabricated. Emission peak at the resonant wavelength was clearly observed. Adjusting the cavity structure, we obtained more than ten times enhanced intensity at the resonant wavelength.
IEEE, 2005, 2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, 678 - 679, English[Refereed]
International conference proceedings
- Organic semiconductor based two-dimensional photonic crystal with a single defect
A two-dimensional organic photonic crystal with a single defect was fabricated on silicon dioxide membranes. Light emission from the single defect in the organic photonic crystal was observed for the first time. (c) 2005 Optical Society of America.
OPTICAL SOC AMERICA, 2005, 2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3, 547 - 549, English[Refereed]
International conference proceedings
Polymethacrylate having a pendent 8-hydroxyquinoline moiety was prepared using Kelex-100 (7-(4-ethyl-1-methyloctyl)-8-hydroxyquinoline) as a starting material. A soluble polymer having tris(8-hydroxyquinolinato)aluminum (AlQ 3)-type side chains was obtained through the complexation of the polymer with Me3Al in the presence of a monomeric Kelex-100. The polymer complex was applied to an organic light-emitting diode (OLED) device through a spin-cast process.
21 Jun. 2004, Macromolecular Rapid Communications, 25 (12), 1171 - 1174, English[Refereed]
Scientific journal
Lateral carrier transport in a copper phthalocyanine (CuPc) thin film has been investigated by the time-of-flight technique using a micro-excitation system. Drift mobility in the CuPc film has been estimated from the transient photocurrent measured for various electric field strengths. The drift mobility has been compared to the field-effect mobility of a thin-film transistor with CuPc as the channel material. The field-effect mobility was comparable to the drift mobility measured by the TOF technique.
INST PURE APPLIED PHYSICS, Apr. 2004, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43 (4B), 2326 - 2329, English[Refereed]
Scientific journal
Integrated circuits with an organic light-emitting diode (OLED) and a thin-film transistor (TFT) based on small molecules were fabricated on a glass substrate. The field-effect mobility and the current on/off ratio of the integrated TFTs with a pentacene layer deposited at room temperature were 0.12 cm(2)/V s and higher than 10(3), respectively. The OLEDs had a multilayer structure containing tris-(8-hydroxyquinoline) aluminum doped with coumarin 6 to obtain high luminance efficiency. The luminance was controlled in the range of up to approximately 1000 by applying the gate voltage of 10 to -10 V. The value of the luminance is sufficient for conventional displays. (C) 2003 American Institute of Physics.
AMER INST PHYSICS, Oct. 2003, APPLIED PHYSICS LETTERS, 83 (16), 3410 - 3412, English[Refereed]
Scientific journal
Organic thin-film transistor circuits based on the small molecule, copper phthalocyanine, have been demonstrated for application to an active-matrix display with organic light-emitting diodes. The circuit consists of two organic thin-film transistors and one storage capacitor which provide continuous current under pulsed operation. The transistors for the circuit have been designed on the basis of the current characteristics of the individual transistors. Continuous output current has been obtained under pulsed voltage operation by using the organic transistor circuit.
INST PURE APPLIED PHYSICS, Apr. 2003, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42 (4B), 2483 - 2487, English[Refereed]
Scientific journal
Squeezed states of light are theoretically investigated in a system with a locally placed two-photon absorption medium. We assume that the two-photon absorption process is caused by elementary excitations in the medium (such as biexcitons). Many eigenmodes of photons and those of the elementary excitations are taken into account because of the locality of the absorber. Multi-mode Wigner functions are defined and used for representation of the density operator of the electromagnetic field. The Wigner functions exhibit multi-variable Gaussian distribution and the quantum states of photons are multi-mode quadrature squeezed states. We also discuss effects on squeezing due to detuning of the incident light, the size of the medium, the position of a photo-detector, and damping rates of photons and the elementary excitations.
IOP PUBLISHING LTD, Oct. 1999, JOURNAL OF OPTICS B-QUANTUM AND SEMICLASSICAL OPTICS, 1 (5), 546 - 556, EnglishScientific journal
We have studied the transition from two-dimensional (2D) growth to three-dimensional (3D) growth at the initial stage of In0.8Ga0.2As growth with the Stranski-Krastanov mode on GaAs by metal organic chemical vapor phase epitaxy. The surface morphology was observed by atomic force microscopy. In the early stage of the growth, the formation of 2D islands and that of holes were alternately repeated. 3D islands (quantum dots) appeared after the deposition of 3 monolayers. 2D islands with 4 monolayer thickness of In0.8Ga0.2As were also formed at the same time. The 2D islands shunned the quantum dots and grew laterally. In addition, we obtained a photoluminescence spectrum with several peaks corresponding to higher subbands with a high excitation intensity from the quantum dots.
ELSEVIER SCIENCE BV, Jan. 1997, JOURNAL OF CRYSTAL GROWTH, 170 (1-4), 563 - 567, English[Refereed]
Scientific journal
- Growth and optical properties of self-assembled quantum dots for semiconductor lasers with confined electrons and photons
We discuss fabrication of InGaAs quantum dot structures using the self-assembling growth technique with the Stranski-Krastanow growth mode in MOCVD, including optical properties of the nano-structures. The formation process of the quantum dot islands was clarified by observing the samples grown under various conditions with an atomic force microscope. A trial for self-alignment of the quantum dots was also investigated. On the basis of these results; as the first step toward the ultimate semiconductor lasers in which both electrons and photons are fully quantized, a vertical microcavity InGaAs/GaAs quantum dot laser was demonstrated. Finally a perspective of the quantum dot lasers is discussed, including the bottleneck issues and the impact of the quantum dot structures for reducing threshold current in wide bandgap lasers such as GaN lasers.
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, Nov. 1996, IEICE TRANSACTIONS ON ELECTRONICS, E79C (11), 1487 - 1494, English[Refereed]
Scientific journal
A vertical microcavity laser structure with an active layer of Stranski-Krastanow quantum dots was fabricated for the first time. The microcavity consists of an InGaAs quantum dot layer grown by MOCVD, located between two AlAs/Al0.2Ga0.8As distributed Bragg-reflector mirrors. The length of the microcavity was 4 lambda(lambda = 884 nm). The cavity effect was evidenced by the difference of the PL linewidths of samples with and without the cavity.
ELSEVIER SCIENCE BV, Sep. 1996, PHYSICA B, 227 (1-4), 404 - 406, English[Refereed]
Scientific journal
- I E E E, 1996, 1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 750 - 752, EnglishFabrication and optical properties of self assembled InGaAs quantum dots embedded in microcavities
[Refereed]
International conference proceedings
これまで行われてきた量子ドット構造の作製技術の研究の中で,特に薄膜の成長様式のひとつであるStranski-Krastanov(SK)成長モードによる自然形成技術に焦点を合わせて論じる。 まず量子ドット作製技術が満たすべき一般的要件およびStranski-Krastanov成長モードを用いた量子ドット作製の研究の流れについて概観する。これらをふまえ筆者らの成果を中心に論じている。成長温度,成長時間および使用する基板を変えたときのドットの形成の様子を明らかにし,ある成長時間以上で急激にドットの密度が高くなることを示した。また,ドットの形成は基板にも敏感で傾斜基板を使用すると同じ成長時間でもJust基板に比べてドットの密度が高いことを示した。さらにドットの形成について詳しく調べるためにAFMにより表面構造を観察した。マルチステップを形成することによりドットがステップ端に形成されやすいことを確かめた。また,この特徴を利用してステップに沿ってドットを配列することに成功した。
Surface Science Society Japan, Oct. 1995, Hyomen Kagaku, 16 (10), 624 - 630, Japanese[Refereed]
Scientific journal
Aligned InGaAs quantum dots as small as 20 nm were naturally formed at multi-atomic step edges by metalorganic chemical vapor deposition growth. In addition, it was found that anisotropic structure of InGaAs along the step edges toward the [110]A direction appears with the increase of growth time of InGaAs. This phenomenon may be useful in the formation of quantum wires.
JAPAN J APPLIED PHYSICS, Aug. 1995, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 34 (8B), 4376 - 4379, English[Refereed]
Scientific journal
- AMER INST PHYSICS, Jun. 1995, APPLIED PHYSICS LETTERS, 66 (26), 3663 - 3665, English
[Refereed]
Scientific journal
- I E E E, 1995, SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 763 - 765, English
[Refereed]
International conference proceedings
MISC
- Lead, IOP Publishing, 01 Jun. 2022, Japanese Journal of Applied Physics, 61 (SE), SE0001 - SE0001, English
[Invited]
Introduction scientific journal
- Lead, IOP Publishing, 01 May 2017, Japanese Journal of Applied Physics, 56 (5S2), 05E001 - 05E001, English
[Invited]
- Lead, IOP Publishing, 01 Mar. 2016, Japanese Journal of Applied Physics, 55 (3S2), 03D001 - 03D001
- The Institute of Electronics, Information and Communication Engineers, 24 Feb. 2015, Proceedings of the IEICE General Conference, 2015 (2), 38 - 38, JapaneseC-9-2 Research Progress of Organic Thin-Film Transistors and Prospects of Commercial Products
- Large conductance C_<60> thin-film transistors
Bottom-contact C_<60> thin-film transistors (TFTs) have been fabricated. The channel lengths (L) ranged from 5 to 40μm. The saturation mobilities slightly depended on the channel length, ranging from 2.45 to 3.23cm^2/Vs. The highest mobility of 3.23cm^2/Vs was obtained from a TFT with L=5μm. The TFT had a conductance of 119μS/mm; which is relative high as compared to conventional organic TFTs. To investigate the reason that the short channel TFTs has high mobilities, we examined parasitic resistance. The calculated parasitic resistance was less than 1kWcm. The low parasitic resistance causes high mobility of the TFTs with with L=5μm.
The Institute of Electronics, Information and Communication Engineers, 24 Oct. 2008, IEICE technical report, 108 (272), 9 - 14, Japanese - 30 May 2008, Molecular electronics and bioelectronics, 19 (2), 65 - 68, Japanese有機トランジスタの低電圧動作・高性能化とCMOS応用
- 日本工業出版, Jan. 2008, 画像ラボ, 19 (1), 9 - 12, Japanese低電圧動作有機CMOS回路--フレキシブルディスプレイへの応用を目指して
- 26 Nov. 2007, Molecular electronics and bioelectronics, 18 (4), 297 - 302, Japanese有機薄膜トランジスタの低電圧動作と閾値電圧
- High field-effect-mobility organic thin-film transistors using high dielectric constant gate insulators
We report high-performance organic-based thin-film transistors (TFTs) with high dielectric constant gate insulators operating at low voltages. The gate insulators are Ti_<1-x>Si_xO_2 films, which were deposited by RF sputtering. The dielectric constant and surface roughness depends on the concentration of SiO_2 in Ti_<1-x>Si_xO_2 films. The Ti_<1-x>Si_xO_2 films with x ≥ 0.17 have flat surfaces. Pentacene TFTs with Ti_<1-x>Si_xO_2 gate insulators were fabricated and can operate at drain voltages of V_D≤-1 V at least. The field effect mobilities obtained at V_D≤-2 V are more than 1.0 cm^2/Vs. The pentacene TFT exhibits high performance with a threshold voltage of-1.6 V, an inverse subthreshold slope of 0.13 V/decade and a current on/off ratio of 1×10^7.
The Institute of Electronics, Information and Communication Engineers, 11 Dec. 2006, IEICE technical report, 106 (439), 59 - 64, Japanese - 15 Sep. 2004, Extended abstracts of the ... Conference on Solid State Devices and Materials, 2004, 160 - 161, EnglishEnhanced Luminance Efficiency from Organic Light-Emitting Diodes with 2D Photonic Crystal
Books etc
- Contributor, 第５章第５節VOC検出のための気体センサの開発と肺がんスクリーニング, 技術情報協会, Oct. 2020, Japanese, ISBN: 9784861048104においのセンシング、分析とその可視化、数値化
- 第II編 第2章 酸化物半導体ガスセンサ, シーエムシー出版, Aug. 2020, Japanese, ISBN: 9784781315157匂いのセンシング技術
- Contributor, 第2章 第5節 電極表面処理技術と物性評価, シーエムシー出版, Nov. 2016, 145-153, Japanese, ISBN: 9784781311906IoTを指向するバイオセンシング・デバイス技術
Textbook
- Contributor, 第７章 第１節，第１項 過渡光電流解析，第３項 高周波伝導特性, テクノシステム, Jan. 2013, 415-417, 420-422, Japanese, ISBN: 9784924728677薄膜の評価技術ハンドブック
- Contributor, 第４章低電圧化, シーエムシー出版, 2005, 117-128, Japanese, ISBN: 4882315106有機トランジスタ材料の評価と応用
Textbook
- Single work, 東京大学数理科学研究科, 2000Analysis of complex excitons and its optical properties = 多体励起子状態及びその光学応答に関する研究
Presentations
- 第70応用物理学関係連合講演会, 15 Mar. 2023, Japaneseスパッタリングにより作製したIn5GaZnO10薄膜トランジスタの特性評価
Oral presentation
- 第70応用物理学関係連合講演会, 15 Mar. 2023, Japanese有機薄膜形成のためのインクジェット法による親水疎水パターニングを用いた液摘挙動制御
Poster presentation
- 第70応用物理学関係連合講演会, 15 Mar. 2023, Japanese層状物質の厚い膜に存在する単層分の厚さの違いを検知する手法
Poster presentation
- 薄膜材料デバイス研究会第19回研究集会, 18 Nov. 2022, JapaneseIn5GaZnO10 薄膜をチャネル層とする電界効果トランジスタの特性評価
Poster presentation
- 薄膜材料デバイス研究会第19回研究集会, 18 Nov. 2022, Japanese光電子収量分光法によるInGaZnO薄膜のバンド構造解析
Poster presentation
- 第83回応用物理学会秋季学術講演会, 23 Sep. 2022, JapaneseIn5GaZnO10薄膜トランジスタの特性評価
Poster presentation
- 第83回応用物理学会秋季学術講演会, 23 Sep. 2022, Japanese大気中光電子収量分光法による原子比率の異なるInGaZnO 薄膜の仕事関数評価
Poster presentation
- 第83回応用物理学会秋季学術講演会, 21 Sep. 2022, Japanese塗布型有機薄膜トランジスタのためのUV/オゾン処理有機単分子膜の改質
Poster presentation
- 第69応用物理学関係連合講演会, Mar. 2022, Japanese大気中光電子収量分光法によるInGaZnO薄膜のエネルギーバンド構造解析
Poster presentation
- 第69応用物理学関係連合講演会, Mar. 2022, Japanese金極薄膜を用いた単層h-BNの可視化
Oral presentation
- MRS FALL MEETING, 07 Dec. 2021, EnglishOrganic thin-film transistors for high performance logic circuits: Realization of short channel, high mobility, low contact resistance and threshold voltage control
[Invited]
Invited oral presentation
- 薄膜材料デバイス研究会 第18回研究集会「結晶成長技術とデバイスの新展開」, 11 Nov. 2021, Japanese金属顕微鏡を用いたアルカンチオール単分子有機膜の可視化
Oral presentation
- 応用物理学会関西支部 2021年度第２回講演会, 15 Oct. 2021, Japanese疎水性単分子膜を修飾した基板上への塗布法用い有機半導体薄形成技術
Poster presentation
- 応用物理学会関西支部 2021年度第２回講演会, 15 Oct. 2021, Japanese塗布法による有機半導体薄膜の製膜において 2度塗りした際の薄膜形成メカニズム
Poster presentation
- 11th International Conference on Flexbile and Printed Electronics, EnglishOrganic monolayers modified by ultraviolet-ozone for solutionprocessed organic thin-film transistors
Poster presentation
- 応用物理学会関西支部 2021年度第１回講演会, 23 Apr. 2021, Japanese撥水性基板上にスピンコート法を用いて作製した有機薄膜ラジタの評価」
Poster presentation
- 応用物理学会関西支部 2021年度第１回講演会, 23 Apr. 2021, Japanese光電子収量分法による酸素プラズマ処理したSiO2絶縁膜表面のエネルギー準位分析
Poster presentation
- 応用物理学会関西支部 2021年度第１回講演会, 23 Apr. 2021, Japanese光学顕微鏡による的異方性を持つ単分子有機薄膜の観察と画像処理解析
Poster presentation
- IEEE EDS Kansai Chapter 第20回「関西コロキアム電子デバイスワークショップ」, 27 Nov. 2020, JapaneseBottom-contact pentacene thin-film transistor with threshold voltages controlled by oxygen plasma treatment
[Invited]
Invited oral presentation
- 薄膜材料デバイス研究会 第17回研究集会「薄膜デバイスの原点」, 05 Nov. 2020, Japanese酸素プラズマ処理により生じる有機半導体／ゲート絶縁膜界面準位のエネルギー分布
Oral presentation
- 39th Electronic Materials Symposium, Oct. 2020, JapaneseEvaluation of carrier mobility in organic metal-oxide-semiconductor capacitors
Poster presentation
- 39th Electronic Materials Symposium, Oct. 2020, JapaneseHighly thermal-stable monolayers formed on a gold surface using benzenedithiol
Poster presentation
- 第67応用物理学関係連合講演会, Mar. 2020, Japanese酸素プラズマ処理が与える有機半導体/絶縁膜界面準位への影響
Others
- 第67応用物理学関係連合講演会, Mar. 2020, Japanese偏光顕微鏡を用いた単層DPh-DNTT二次元核の方位決定
Others
- 応用物理学会関西支部 2019年度第２回講演会, Nov. 2019, JapaneseSnOx を用いたpチャネル薄膜トランジスタに対するスパッタパワーと圧力の影響
Poster presentation
- 薄膜材料デバイス研究会 第16回研究集会, Nov. 2019, Japaneseガスセンサ応用に向けたSnO2薄膜トランジスタの電流安定性評価
Poster presentation
- 薄膜材料デバイス研究会 第16回研究集会, Nov. 2019, Japaneseパッシベーション膜を有するpチャネルSnOx薄膜トランジスタ
Poster presentation
- 薄膜材料デバイス研究会 第16回研究集会, Nov. 2019, Japaneseフルオロベンゼンチオールを電極表面に修飾した有機薄膜トランジスタ
Oral presentation
- 38th Electronic Materials Symposium, Oct. 2019, JapaneseStatistical study of shape for submonolayer 2D islands of DPh-DNTT prepared by vacuum deposition
Poster presentation
- 第80回応用物理学会学術講演会, Sep. 2019, Japanese金表面に形成したベンゼンジチオール単分子膜の耐熱性評価
Poster presentation
- 第80回応用物理学会学術講演会, Sep. 2019, JapaneseMOSキャパシタ構造を利用した有機半導体中のキャリア移動度評価
Oral presentation
- 第80回応用物理学会学術講演会, Sep. 2019, Japanese単層 DPh-DNTT の2次元アイランドにおける異方性
Oral presentation
- 第80回応用物理学会学術講演会, Sep. 2019, Japanese酸化物半導体ガスセンサの研究開発の現状：高感度水素検出に向けて
[Invited]
Invited oral presentation
- IEEE EDS Kansai Chapter 第19回「関西コロキアム電子デバイスワークショップ」, Sep. 2019, JapaneseLogic circuits consisting of pentacene thin-film transistors with controlled threshold voltages
[Invited]
Invited oral presentation
- International Conference on Solid State Devices and Materials, Sep. 2019, EnglishBottom-contact pentacene thin-film transistor with threshold voltages controlled by oxygen plasma treatment
Poster presentation
- 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructure, Sep. 2019, EnglishA p-channel SnOx thin-film transistor with a SiO2 passivation layer
Poster presentation
- 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructure, Sep. 2019, EnglishCurrent stability in SnO2 thin-film transistors with ultra-thin channel layers toward gas sensor application
Poster presentation
- 応用物理学会関西支部 2019年度第１回講演会, Jun. 2019, Japanese有機薄膜トランジスタにおける酸素プラズマを用いたパターニング
Poster presentation
- 応用物理学会関西支部 2019年度第１回講演会, Jun. 2019, JapaneseUV/ozone処理を用いた熱酸化膜上単分子膜の被覆率操作
Poster presentation
- 10th International Conference on Molecular Electronics and Bioelectronics, Jun. 2019, EnglishSurface properties of oriented polytetrafluoroethylene films with a micrometer pitch
Poster presentation
- 10th International Conference on Molecular Electronics and Bioelectronics, Jun. 2019, EnglishThe formation of a mixed monolayer on a gold surface toward surface property control
Poster presentation
- 10th International Conference on Molecular Electronics and Bioelectronics, Jun. 2019, EnglishHigh thermal stability of the benzenedithiol monolayer formed on a gold surface
Poster presentation
- Compound Semiconductor Week, May 2019, EnglishNucleation and shape of 2D islands of DPh-DNTT thin-films prepared by vacuum evaporation
Oral presentation
- Compound Semiconductor Week, May 2019, EnglishVoltage and frequency dependence of capacitance characteristics in organic MOS capacitors
Poster presentation
- Compound Semiconductor Week, May 2019, EnglishThin-film transistors based on copper phthalocyanine deposited on a gate dielectric rubbed with poly(tetrafluoroethylene)
Poster presentation
- 日本学術振興会透明酸化物光・電子材料第166委員会 第83回研究会, Apr. 2019, Japanese酸化物半導体薄膜のガスセンサ応用：揮発性有機化合物の識別可能性
[Invited]
Invited oral presentation
- 第66応用物理学関係連合講演会, Mar. 2019, Japanese酸素プラズマ処理によるボトムコンタクト型有機トランジスタの閾値電圧制御
Poster presentation
- 第66応用物理学関係連合講演会, Mar. 2019, Japanese有機MOSキャパシタの電圧・周波数特性解析
Oral presentation
- 第66応用物理学関係連合講演会, Mar. 2019, Japanese真空蒸着法におけるDNTTとその誘導体の核形成機構
Oral presentation
- 応用物理学会関西支部 平成30年度第３回講演会, Feb. 2019ガスセンサ応用に向けた酸化スズ薄膜トランジスタの電流電圧特性の安定性評価
- 第64応用物理学関係連合講演会, Mar. 2017, Japanese, Domestic conference水晶振動子センサを用いたベンゼンチオール単分子膜に依存した大気中水分子吸着特性の評価
Oral presentation
- 日本真空学会関西支部 第９回実用技術セミナー, Jan. 2017, Japanese, Domestic conferenceガスセンサ・バイオセンサのための材料作製技術
[Invited]
Invited oral presentation
- 1st Bilateral Workshop on Research Exchange between National Taiwan University and Kobe University, Dec. 2016, English, International conferenceRecent Research on Physical Electronics in the Department of Electrical and Electronic Engineering
Invited oral presentation
- 23rd International Display Workshops in conjunction with Asia Display, Dec. 2016, English, International conferenceFundamental technology for organic transistors and their application to sensor devices
[Invited]
Invited oral presentation
- 大阪府立大学21世紀化学研究機構 分子エレクトロニックデバイス研究所 第18回研究会, Nov. 2016, Japanese, Domestic conference背面露光法による自己整合電極を有するペンタセン薄膜トランジスタ
Poster presentation
- 大阪府立大学21世紀化学研究機構 分子エレクトロニックデバイス研究所 第18回研究会, Nov. 2016, Japanese, Domestic conference電極表面をベンゼンチオール誘導体で修飾したボトムコンタクト型C60トランジスタ
Poster presentation
- 大阪府立大学21世紀化学研究機構 分子エレクトロニックデバイス研究所 第18回研究会, Nov. 2016, Japanese, Domestic conferenceデバイス応用のための界面・表面の物性制御 ～有機トランジスタの閾値電圧制御を中心に～
[Invited]
Invited oral presentation
- 薄膜材料デバイス研究会 第13回研究集会, Oct. 2016, Japanese, Domestic conferenceアニールによるSnOx薄膜を利用したpチャネル薄膜トランジスタ
Poster presentation
- 電子情報通信学会 有機エレクトロニクスデバイス・材料に関する研究討論会, Sep. 2016, Japanese, Domestic conference有機トランジスタの回路応用と閾値電圧制御
[Invited]
Invited oral presentation
- 35th Electronic Materials Symposium, Jul. 2016, Japanese, Domestic conferenceOptimization in microwave synthesis of copper phthalocyanine for organic thin-film transistors
Poster presentation
- 第63応用物理学関係連合講演会, Mar. 2016, Japanese, 東京, Domestic conference背面露光法を利用して作製した表面処理電極を有するペンタセン薄膜トランジスタ
Poster presentation
- 第63応用物理学関係連合講演会, Mar. 2016, Japanese, 東京, Domestic conferenceボトムコンタクト型フラーレンC60トランジスタの電極表面処理効果
Poster presentation
- 応用物理学会関西支部 平成27年度第３回講演会, Feb. 2016, Japanese, 大阪, Domestic conference酸素プラズマ処理によるDNTTトランジスタの閾値電圧への影響
Poster presentation
- ナノ量子情報エレクトロニクス連携研究拠点成果報告シンポジウム, Feb. 2016, Japanese, 東京, Domestic conference高性能有機薄膜トランジスタの実現と新たな展開
[Invited]
Invited oral presentation
- 応用物理学会関西支部 平成27年度第３回講演会, Feb. 2016, Japanese, 大阪, Domestic conferenceスパッタリング製膜したSnOxのアニールにより作製したpチャネル薄膜トランジスタ
Poster presentation
- 薄膜材料デバイス研究会 第12回研究集会, Oct. 2015, Japanese, 京都, Domestic conference酸素プラズマ処理によるDNTTトランジスタの閾値電圧制御
Oral presentation
- 応用物理学会関西支部 平成27年度第２回講演会, Sep. 2015, Japanese, 大阪, Domestic conferenceベンゼンチオール誘導体単分子膜を用いた金属表面の物性制御
Poster presentation
- 34th Electronic Materials Symposium, Jul. 2015, Japanese, 滋賀, Domestic conferencePhysical properties of metal surfaces modified with substituted-benzenethiol
[Invited]
Poster presentation
- 34th Electronic Materials Symposium, Jul. 2015, Japanese, 滋賀, Domestic conferenceAnnealing effect on the electrical properties in fluorinated copper phthalocyanine films for organic photovoltaic applications
[Invited]
Poster presentation
- 8th International Conference on Molecular Electronics and Bioelectronics, Jun. 2015, English, 東京, International conferenceWettability properties of substituted-benzenethiol monolayers on silver and gold surfaces
[Invited]
Poster presentation
- 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, Jun. 2015, English, 新潟, International conferenceOperational Stability in Pentacene Thin-Film Transistors with Threshold Voltages Tuned by Oxygen Plasma Treatment
[Invited]
Oral presentation
- 8th International Conference on Molecular Electronics and Bioelectronics, Jun. 2015, English, 東京, International conferenceDinaphthothienothiophen Thin-Film Transistors with Threshold Voltage Shift Induced by Oxygen Plasma
[Invited]
Poster presentation
- 8th International Conference on Molecular Electronics and Bioelectronics, Jun. 2015, English, 東京, International conferenceCopper phthalocyanine synthesized by microwave irradiation and the application to thin-film transistors
[Invited]
Poster presentation
- 応用物理学会 有機分子・バイオエレクトロニクス分科会「有機分子・バイオエレクトロニクスの最新動向」, May 2015, Japanese, 富山, Domestic conferenceベンゼンチオール誘導体修飾による金表面の物性変化：仕事関数とその熱安定性および水接触角
Oral presentation
- 東京大学ナノ量子情報エレクトロニクス研究機構 ナノ量子情報エレクトロニクスセミナー, Apr. 2015, Japanese, 東京, Domestic conference有機薄膜トランジスタの研究開発～高性能・高機能トランジスタの実現を目指して～
[Invited]
Invited oral presentation
- 2015年総合大会講演論文集, Mar. 2015, Japanese, 電子情報通信学会, 滋賀, Domestic conference有機薄膜トランジスタの研究開発と実用化に向けた展望
[Invited]
Invited oral presentation
- 第62応用物理学関係連合講演会, Mar. 2015, Japanese, 応用物理学会, 神奈川, Domestic conferenceベンゼンチオール誘導体による修飾表面の濡れと安定性
Poster presentation
- 11th International conference on Nano-Molecular Electronics, Dec. 2014, English, Kobe, International conferenceWettability Control of Gold Surfaces Modified with Benzenethiol Derivatives
[Invited]
Oral presentation
- 第75回応用物理学会学術講演会, Sep. 2014, Japanese, 応用物理学会, 札幌, Domestic conference有機薄膜トランジスタの閾値電圧制御：集積回路応用に向けて
Oral presentation
- 第75回応用物理学会学術講演会, Sep. 2014, Japanese, 応用物理学会, 札幌, Domestic conferenceベンゼンチオール誘導体を用いた金属表面の濡れ性制御
Poster presentation
- 第75回応用物理学会学術講演会, Sep. 2014, Japanese, 応用物理学会, 札幌, Domestic conferenceジナフトチエノチオフェン骨格を有するn 型有機トランジスタ材料の設計
Poster presentation
- International Conference on Solid State Devices and Materials, Sep. 2014, English, Ibaragi, International conferencePentacene Thin-Film Transistors with Controlled Threshold Voltages andTheir Application to Pseudo CMOS Inverters
[Invited]
Oral presentation
- International Conference on Solid State Devices and Materials, Sep. 2014, English, Ibaragi, International conferenceAnnealing Effect on Field-Effect Mobilities in Bottom-Contact Alkylated Dinaphthothienothiophene Transistors
[Invited]
Oral presentation
- 第33回電子材料シンポジウム, Jul. 2014, Japanese, Shizuoka, Domestic conferenceThreshold voltage control in organic thin-film transistors by oxygen plasma treatment
[Invited]
Poster presentation
- 公開シンポジウム「ナノ量子情報エレクトロニクスの新展開」, May 2014, Japanese, 東京, Domestic conference有機薄膜トランジスタの閾値電圧制御と擬似CMOS回路への応用
Poster presentation
- 公開シンポジウム「ナノ量子情報エレクトロニクスの新展開」, May 2014, Japanese, 東京, Domestic conference有機デバイス応用に向けたフッ素化銅フタロシアニンの膜構造および電気的特性に対するアニール効果
Poster presentation
- 公開シンポジウム「ナノ量子情報エレクトロニクスの新展開」, May 2014, Japanese, 東京, Domestic conference高性能・高速動作有機薄膜トランジスタの開発
Nominated symposium
- 6th Asian Coating Workshop, May 2014, English, Kobe, International conferenceSolution-processed organic thin-film transistors
[Invited]
Invited oral presentation
- 第61応用物理学関係連合講演会, Mar. 2014, Japanese, 応用物理学会, 神奈川, Domestic conference閾値電圧制御された有機トランジスタから成る擬似CMOS回路
Oral presentation
- 第61応用物理学関係連合講演会, Mar. 2014, Japanese, 応用物理学会, 神奈川, Domestic conference表面処理電極を有するボトムコンタクト型アルキルDNTTトランジスタ
Oral presentation
- 第61応用物理学関係連合講演会, Mar. 2014, Japanese, 応用物理学会, 神奈川, Domestic conferenceフッ素化銅フタロシアニンの膜構造および電気的特性へのアニール効果
Poster presentation
- 第10回研究集会「薄膜デバイスの応用展開」, Oct. 2013, Japanese, 薄膜材料デバイス研究会, 京都, Domestic conference擬似CMOS 回路への応用に向けた有機薄膜トランジスタの閾値電圧制御
Oral presentation
- 第４回 有機分子・バイオエレクトロニクスの未来を拓く若手研究者討論会, Sep. 2013, Japanese, 応用物理学会 有機分子・バイオエレクトロニクス分科会, 京都, Domestic conference有機トランジスタは実用化されるか ～ 若手研究者に向けて～
Invited oral presentation
- 第74回応用物理学会学術講演会, Sep. 2013, Japanese, 応用物理学会, 京都, Domestic conference酸素プラズマ処理による有機トランジスタの閾値電圧精密制御
Oral presentation
- 第74回応用物理学会学術講演会, Sep. 2013, Japanese, 応用物理学会, 京都, Domestic conferenceボトムコンタクト型アルキルDNTT 薄膜トランジスタの安定性評価
Poster presentation
- Society for Information Display International Symposium, Sep. 2013, English, The Japan Society of Applied Physics, Fukuoka, International conferenceThermal Stability of Short Channel, High-Mobility Organic Thin-Film Transistors having Bottom-Contact Configuration
[Invited]
Poster presentation
- Society for Information Display International Symposium, Sep. 2013, English, The Japan Society of Applied Physics, Fukuoka, International conferenceStructural and Electrical Properties of Fluorinated Copper Phthalocyanine for Organic Photovoltaics
[Invited]
Oral presentation
- 40th International Symposium on Compound Semiconductors, May 2013, English, The Japan Society of Applied Physics, Fukuoka, International conferenceThreshold Voltage Control in Pentacene Thin-Film Transistors by Oxygen Plasma Treatment
[Invited]
Poster presentation
- 40th International Symposium on Compound Semiconductors, May 2013, English, The Japan Society of Applied Physics, Fukuoka, International conferenceShort-Channel, High-Mobility Organic Thin-Film Transistors with Alkylated Dinaphthothienothiophene
[Invited]
Oral presentation
- 40th International Symposium on Compound Semiconductors, May 2013, English, The Japan Society of Applied Physics, Fukuoka, International conferenceFine tuning of energy levels in partially fluorinated copper phthalocyanine for organic photovoltaics
[Invited]
Poster presentation
- 第60応用物理学関係連合講演会, Mar. 2013, Japanese, 応用物理学会, 神奈川, Domestic conference酸素プラズマ処理による有機薄膜トランジスタの閾値電圧制御
Poster presentation
- 第60応用物理学関係連合講演会, Mar. 2013, Japanese, 応用物理学会, 神奈川, Domestic conferenceアルミ電極を有するアルキルDNTT薄膜トランジスタ
Poster presentation
- 7th International Conference Molecular Electronics and Bioelectronics, Mar. 2013, English, Division of Molecular Electronics and Bioelectronics- The Japan Society of Applied Physics, Fukuoka, International conferencePartially Fluorinated Copper Phthalocyanine toward Band Engineering for High-Efficiency Organic Photovoltaics
[Invited]
Oral presentation
- 7th International Conference Molecular Electronics and Bioelectronics, Mar. 2013, English, Division of Molecular Electronics and Bioelectronics- The Japan Society of Applied Physics, Fukuoka, International conferenceDinaphthothienothiophene Thin-Film Transistors with Aluminum/Molybdenum Oxide Electrodes
[Invited]
Poster presentation
- 第9回研究集会「薄膜デバイスの未来」, Nov. 2012, Japanese, 薄膜材料デバイス研究会, 奈良, Domestic conference高性能有機CMOS回路－高速動作はどこまで可能か－
Invited oral presentation
- 第73回応用物理学会学術講演会, Sep. 2012, Japanese, 応用物理学会, 愛媛, Domestic conference高移動度ボトムコンタクト型アルキルDNTT薄膜トランジスタ
Oral presentation
- 第73回応用物理学会学術講演会, Sep. 2012, Japanese, 応用物理学会, 愛媛, Domestic conferenceボトムコンタクト型DNTT薄膜トランジスタの大気安定性
Poster presentation
- 第73回応用物理学会学術講演会, Sep. 2012, Japanese, 応用物理学会, 愛媛, Domestic conferenceインクジェット印刷法による高性能C60薄膜トランジスタ
Invited oral presentation
- The 2012 International Conference on Flexible and Printed Electronics, Sep. 2012, English, Tokyo, International conferenceThreshold Voltage Shift of Inkjet-Printed C8-BTBT Thin-Film Transistors
[Invited]
Oral presentation
- International Conference on Solid State Devices and Materials, Sep. 2012, English, The Japan Society of Applied Physics, Kyoto, International conferenceDinaphtho Thieno Thiophene Thin-Film Transistors with Modified Platinum Electrodes in Bottom-Contact Configuration
[Invited]
Oral presentation
- Society for Information Display International Symposium, Jun. 2012, English, Boston, International conferenceHigh-Performance Ink-Jet-Printed TFTs on Solution Wetting Polymer Gate Dielectric Layer
[Invited]
Poster presentation
- 第2回物質・デバイス領域共同研究拠点活動報告会, Apr. 2012, Japanese, 物質・デバイス領域共同研究拠点, 東京, Domestic conference有機半導体を用いた高性能CMOSのための n 型 半導体基板開発
Others
- Materials Research Society Spring Meeting, Apr. 2012, English, San Francisco, International conferenceSolution-processed C60 Single Crystal Field-effect Transistors
[Invited]
Oral presentation
- Materials Research Society Spring Meeting,, Apr. 2012, English, Materials Research Society, USA, International conferenceSolution-processed C60 Single Crystal Field-effect Transistors
[Invited]
Oral presentation
- 第59応用物理学関係連合講演会, Mar. 2012, Japanese, 応用物理学会, 東京, Domestic conference白金電極を有するボトムコンタクト型DNTT薄膜トランジスタ
Poster presentation
- 第59応用物理学関係連合講演会, Mar. 2012, Japanese, 応用物理学会, 東京, Domestic conference酸化モリブデン／アルミ電極を有するDNTT薄膜トランジスタ/アルミ電極を有するDNTT薄膜トランジスタ
Poster presentation
- 第59応用物理学関係連合講演会, Mar. 2012, Japanese, 応用物理学会, 東京, Domestic conferenceインクジェット法による高均一非晶質C60薄膜の作製と高移動度(＞2.4 cm2／V・s) n-channelトランジスタの実現/V・s) n-channelトランジスタの実現
Oral presentation
- 平成23年度 物質・デバイス共同研究拠点 共同研究 特定研究[A-4] ワークショップ, Feb. 2012, Japanese, 物質・デバイス領域共同研究拠点, 大阪, Domestic conference有機半導体を用いた高性能CMOSのための n 型 半導体基板開発
Others
- International Conference on Solid State Devices and Materials, Sep. 2011, English, The Japan Society of Applied Physics, Aichi, International conferenceSolution-processed C60 field-effect transistors with high mobility
[Invited]
Oral presentation
- 5th East Asia Symposium on Functional Dyes & Advanced Materials, Sep. 2011, English, East Asia Symposium, China, International conferenceHigh-frequency-operating organic thin-film transistors and CMOS circuits
[Invited]
Invited oral presentation
- 第72回応用物理学会学術講演会, Aug. 2011, Japanese, 応用物理学会, 山形, Domestic conference塗布工程による高移動度C60薄膜トランジスタの作製
Oral presentation
- 第72回応用物理学会学術講演会, Aug. 2011, Japanese, 応用物理学会, 山形, Domestic conference高速動作有機CMOSリングオシレータ:発振周波数 200 kHz
Oral presentation
- 第72回応用物理学会学術講演会, Aug. 2011, Japanese, 応用物理学会, 山形, Domestic conference化学結合で積層したオリゴチオフェン積層膜と同じ分子構造を有するLB膜の分子配向の比較
Oral presentation
- 応用物理学会 M&BE研究会「有機分子・バイオエレクトロニクスの動向と展望」, Jun. 2011, Japanese, 応用物理学会 有機分子・バイオエレクトロニクス分科会, 神戸, Domestic conference高速動作有機トランジスタに向けた有機無機界面制御
[Invited]
Oral presentation
- 30th Electronic Materials Symposium, Jun. 2011, English, Electronic Materials Symposium, Shiga, Domestic conference200-kHz-operation of organic CMOS ring oscillator
[Invited]
Oral presentation
- 第58応用物理学関係連合講演会, Mar. 2011, Japanese, 応用物理学会, 神奈川, Domestic conferenceSolution processed C60 fullerene thin-film transistors
Others
- 第58応用物理学関係連合講演会, Mar. 2011, Japanese, 応用物理学会, 神奈川, Domestic conferenceRectification Properties of Pentacene Transistor Diodes
Others
- 6th International Conference on Molecular Electronics and Bioelectronics, Mar. 2011, English, The Japan Society of Applied Physics, Division of Molecular Electronics and Bioelectronics, JSAP, Miyagi, International conferenceFrequency property of a rubrene single-crystal field-effect transistor
[Invited]
Others
- 6th International Conference on Molecular Electronics and Bioelectronics, Mar. 2011, English, The Japan Society of Applied Physics, Division of Molecular Electronics and Bioelectronics, JSAP, Miyagi, International conferenceA high frequency organic CMOS ring oscillator operating at 100 kHz
[Invited]
Others
- 第56回応用物理学会学術講演会, Aug. 1995, Japanese量子ドットを有する微小共振器レーザの構造の作製
- 第42回応用物理学関係連合講演会, Mar. 1995, Japaneseマルチステップを利用した InGaAs 量子ドットの自然配列
- 第42回応用物理学関係連合講演会, Mar. 1995, Japanese格子不整合を利用したマルチステップ上の InGaAs 量子細線の作製
- 14th Electronic Materials Symposium, 1995, JapaneseIn-situ Fabrication of Self-Aligned InGaAs Quantum Dots on GaAs Multi-Atomic Steps by MOCVD
Poster presentation
- 第5回情報処理学会東北支部研究会, Mar. 1994, JapaneseBEM-FDM 結合法を用いたスフェロマック・プラズマの MHD 平衡解析
Oral presentation
Association Memberships
Research Projects
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), Kobe University, 01 Apr. 2019 - 31 Mar. 2022Fundamental development for realization of high-performance organic transistors based on molecular orientation and interface control
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Challenging Research (Pioneering), Challenging Research (Pioneering), Kobe University, 30 Jun. 2017 - 31 Mar. 2020生体内発電にむけた超フレキシブル有機圧電フィルムの創製
P(VDF/TrFE)/ILゲルにおいて、リーク電流を抑制して分極反転を安定操作するために導入した三層構造ゲル素子（固体/ゲル/固体)）の分極反転メカニズムを考察した。三層構造ゲル素子では従来の固体P(VDF-TrFE)と同等の残留分極量Prを示し、抗電界は大幅低下した。ゲル層だけでなく固体層も低電界で分極反転している実験事実から、そのメカニズムがイオン液体/P(VDF/TrFE)界面における電気二重層と分極との相互作用にあると考えた。外部電場を印加した際、ゲル内部のイオン液体は低電圧でイオン組み替えをおこし、界面極近傍に電気二重層を形成する。その際、界面での電束補償のために上下固体層P(VDF/TrFE)の分極反転が誘発されるモデルを考察した。また有機圧電フィルムからの出力信号を検知するための有機トランジスタ回路に関する研究を進め、その過程で得られた閾値電圧制御の技術を論理回路に応用して発振回路の動作に成功した。 また昨年度導入した心臓拍動シミュレータを用いて心臓の動きの圧電センシングを試みた。超薄圧電フィルムを成人男性の3D-CT画像から再現した心臓モデルに貼り付け、その拍動に伴う圧電出力の観測を行った。右心房・左心房を中心に臓器に沿うように設置した圧電フィルムからは、心臓モデルの膨張時、収縮時に正負逆の明確な圧電電圧信号をピックアップできた。分極処理としてUp/Downを反転すると逆極性の信号が観測できたことから、静電ノイズではなく圧電信号であることを確認した。またPVDFフィルムを用いた柔軟なカテーテル型触覚センサを試作し，錘落下実験による基礎評価を経て、内壁に凹凸のある血管モデルへの挿入実験を行い、生体内センシングの基礎検証を行った。
- Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), Kobe University, 01 Apr. 2012 - 31 Mar. 2015, Principal investigator
The basic technology development for realization of high-frequency operating organic-transistor circuits leaded to the following achievement. Surface treatment for contact electrodes and optimization of fabrication process realized a high mobility of 3.3 cm2/Vs in organic transistors with bottom contact configuration that is easily applied to short channel transistors. Also, threshold voltage control in the range of a few V was demonstrated by oxygen plasma treatment. Furthermore, the work function and the thermal stability of surface-modified electrodes for low contact resistance were investigated. As a result, work functions in the range of 4.3 to 5.5 eV were obtained.
Competitive research funding
- 有機半導体に関する研究
Competitive research funding
- Study on Organic Semiconductor
Competitive research funding
Industrial Property Rights
有機デバイス用電極、及びそれを備えた有機デバイス
特願2014-117870, 06 Jun. 2014, Sharp Corporation, 特開2015-231028, 21 Dec. 2015, 特許6326297, 20 Apr. 2018Patent right
有機光電変換素子
特願2014-131501, 26 Jun. 2014, シャープ株式会社;国立大学法人 神戸大学, 特開2015-130480, 16 Jul. 2015Patent right
有機薄膜トランジスタおよびその製造方法
特願2009-3943, 09 Jan. 2009, シャープ株式会社;国立大学法人 東京大学, 特開2010-161312, 22 Jul. 2010Patent right
有機薄膜トランジスタ
特願2008-309618, 14 Dec. 2008, シャープ株式会社;国立大学法人 東京大学, 特開2010-135542, 17 Jun. 2010Patent right
湿式製膜可能な有機ＥＬ素子製造用材料及び有機ＥＬ素子
特願2005-254268, 02 Sep. 2005, 日本軽金属株式会社;国立大学法人 東京大学, 特開2007-63489, 15 Mar. 2007Patent right
有機トランジスタの製造方法、及び有機トランジスタ
特願2003-298697, 22 Aug. 2003, 国立大学法人 東京大学, 特開2005-72188, 17 Mar. 2005Patent right
Media Coverage
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- 日本経済新聞, 日経ナノビジネス, 26 Jun. 2006, No. 40 p. 23フォトニック結晶の有機材料で３原色発光センサーなどに応用へ
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- 日本経済新聞, 08 May 1995半導体の「量子箱」製造 位置制御に成功 東大生研 基板上に自然に整列
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